Plenary 

• Mark Kushner (University of Michigan, USA) 

           Status on Integrated Reactor and Feature Scale Modeling for Plasma-based Semiconductor Fabrication

• Geoffrey Pourtois (IMEC, Belgium) 

          Atomistic Simulations, Tools to Gain Fundamental Understanding In Materials And Device Properties 

• Aaron Thean (Singapore Uni., Singapore) 

          Novel Materials + Novel Integration = Novel Electronics 

Invited

• Francis Benistant 

          Future of TCAD: A Foundry Perspective

• Juan Duarte (Berkeley, USA)

           Negative-Capacitance FinFETs: Numerical Simulation, Compact Modeling and Circuit Evaluation 

• Andrea Ghetti (Micron, Italy)

           Emerging memory modeling challenges

• Junichi Hattori (AIST, Japan)

           Device simulations of negative-capacitance field-effect transistors with a ferroelectric gate insulator

• Myung-Hee Na (IBM, USA)

          Rapid and holistic technology evaluation for exploratory DTCO in beyond 7nm technologies

• Mathieu Luisier (ETH, Switzerland)

           Advanced algorithms for ab-initio device simulations

• Azad Naeemi (Georgia Tech., USA)

           Performance Modeling and Circuit Design for Beyond-CMOS Devices

• Harsono Simka (Samsung, USA)

           Modeling of Interconnect Materials and Interfaces - Challenges and Opportunities

• Robert Trew (NCSU, USA)

           Physics-based Compact Models for AlGaN/GaN HFETs

• Guangrui (Maggie) Xia (U. British Columbia, Canada)

          Experiments and Modeling of Mass Transport Phenomena in SiGe Devices​​