September 9-11, 2009 — Hotel Del Coronado — San Diego — California
TECHNICAL PROGRAM
Technical Program:
September 9, 2009
September 10, 2009
September 11, 2009
| P-1 | "TCAD Investigation of Abnormal Degradation if Inhibited Cells in NAND Flash Structures" J. Postel-Pellerin, F. Lalande, P. Canet, R. Bouchakour, F. Jeuland*, B. Bertello*, B. Villard Aix-Marseille Universite, Marseille, France, *ATMEL Corporation, Rousset, France |
| P-2 | "A New F(ast)-CMOS Algorithm for Efficient Three-Dimensional NEGF Simulations of Arbitrarily Shaped Silicon Nanowire MUGFETs" A. Afzalian, C.-W. Lee, N. Dehdashti Akhavan, R. Yan, I. Ferain, P. Razavi, J.-P. Colinge Tyndall National Institute, Cork, Ireland |
| P-3 | "Accurate Mobility and Energy Relaxation Time Models for SiGe HBTs Numerical Simulation" G. Sasso, G. Matz*, C. Jungemann*, N. Rinaldi University of Naples, Naples, Italy, *Bundeswehr University, Neubiberg, Germany |
| P-4 | "Impact of Thickness and Deposition Temperature of Gate Dielectric on Valence Bands in Silicon Nanowires" H. Xu, Y. He, C. Fan*, Y. Zhao, G. Du, J. Kang, R. Han, X. Liu Peking University & Minstry of Education, Beijing, China, *Peking University, Beijing, P.R. China |
| P-5 | "TCAD Analysis of a Vertical RF Power Transistor" W. Z. Cai, B. Gogoi, R. B. Davies, D. Lutz, D. Rice, G. H. Loechelt*, G. Grivna* HVVi Semiconductors, Phoenix, AZ, *ON Semiconductor, Phoenix, AZ |
| P-6 | "Using TCAD, Response Surface Model and Monte Carlo Methods to Model Processes and Reduce Device Variation" D. Basu, J. Guha*, P. Hatab*, P. Vaidyanathan*, S. K. Groothuis**, C. Mouli* University of Texas at Austin, Austin, TX, *Micron Technology, Boise, ID, **Consultant, SimuTech Group |
| P-7 | "Semiclassical Monte Carlo with Quantum-Confinement Enhanced Scattering: Quantum Correction and Application to Short-Channel Device Performance vs. Mobility for Biaxial-Tensile-Strained Silicon nMOSFETs" N. Shi, L. F. Register, S. K. Benerjee University of Texas at Austin, Austin, TX |
| P-8 | "Population Inversion and Negative Dynamic Conductivity in Optically Pumped Graphene" A. Satou, F. T. Vasko*, T. Otsuji**, V. Ryzhii University of Aizu, Aizu-Wakamatsu, Japan, *NAS of Ukraine, Kiev, Ukraine, **Tohoku University, Sendai, Japan |
| P-9 | "Comparative Study on Si and Ge p-type Nanowire FETs based on Full-Band Non-Equilibrium Green's Function Simulation" H. Minari, N. Mori Osaka University, Osaka, Japan |
| P-10 | "Adding Physical Scalability to BSIM4 by Meta-Modeling of Fitting Parameters" T. Nagumo, K. Takeuchi, S. Kumashiro, Y. Hayashi NEC Electronics Corp., Kanagawa, Japan |
| P-11 | "Simulation on NBTI Degradation Due to Discrete Interface Traps Considering Local Mobility Model and its Statistical Effects" S. W. Choi, C.-K. Baek*, S. Park, H. H. Park, Y. J. Park Seoul National University, Seoul, Korea, *Korea Institute for Advanced Study, Seoul, Korea |
| P-12 | "Monte Carlo Study of Ambipolar Transport and Quantum Effects in Carbon Nanotube Transistors" H. N. Nguyen, S. Retailleau, D. Querlioz, A. Bournel, P. Dollfus Universite Paris-Sud, Orsay, France |
| P-13 | "Simulation of Layout-Dependent STI Stress and Its Impact on Circuit Performance" L. Yang, X. Li, L. Tian, Z. Yu Tsinghua University, Beijing, China |
| P-14 | "Full Quantum Investigation of Low Field Mobility in Short-Channel Silicon Nanowire FETs" S. Poli, M. G. Pala* University of Bologna, Italy, *IMEP-LAHC, Grenoble, France |
| P-15 | "Integrated Stress and Process Calibration in Strained-Si Devices" T.-H. Yu, K.-C. Tu, Y.-M. Sheu, C. H. Diaz TSMC, Hsinchu, Taiwan |
| P-16 | "SPICE Modeling of Self Sustained Operation (SSO) to Program Sub 90nm Floating Body Cells" M. Gupta, S. Bhardwaj, J. Kwon, V. Gopinath Innovative Silicon Inc., Santa Clara, CA |
| P-17 | "Comparison of In0.7Ga0.3As and Si as Material of Choice for Low-Power High Performance Logic Devices: A Theoretical Investigation" T. Rakshit, N. Neophytou*, H. Pal**, G. Dewey, M. Hudait, M. Radosavljevic Intel Corporation, *TU Vienna, Austria, **Purdue University |
| P-18 | "2D Quantum Mechanical Simulation of Gate-Leakage Current in Double-Gate n-MOSFETs" S. Muraoka, R. Mukai, S. Souma, M. Ogawa Kobe University, Kobe, Japan |
| P-19 | "Particle-based Simulation of Conductance of Solid State Nanopores and Ion Channels" C. Berti, S. Furini*, S. Cavalcanti*, E. Sangiorgi*, C. Fiegna* University of Bologna and IUNET, Cesena, Italy, University of Bologna, Bologna, Italy |
sispad09@gloworm.stanford.edu