Reliability II
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11:50 – 12:10 |
A Dynamic Current Hysteresis Model for Thin-Film Transistors Yu Li1, Xiaoqing Huang1, Congwei Liao1, Runsheng Wang2, Shengdong Zhang1, Lining Zhang1, Ru Huang2 1School of ECE, Peking University (China) 2School of Integrated Circuits Peking University (China) |
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12:10 – 12:30 |
Analysis of 1/f and G-R Noise in Phosphorene FETs Adhithan Pon and Avirup Dasgupta DiRac Lab, Department of ECE, Indian Institute of Technology (India) |
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12:30 – 12:50 |
Microstructural Impact on Electromigration Reliability of Gold Interconnects H. Ceric, R. L. de Orio and S. Selberherr Institute for Microelectronics, TU Wien (Austria) |
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12:50 – 13:10 |
Reliability of TCAD Study for HfO2-doped Negative Capacitance FinFET with Different Material Specific Dopants Rajeewa Kumar Jaisawal, Sunil Rathore, P.N. Kondekar, and Navjeet Bagga VLSI Design and Nano-scale Computational Lab, Electronics and Communication Engineering Department, PDPM-IIITDM (India) |