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International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Conference
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International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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September 6-8, 2022
Granada, Spain
Conference
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Committees
General Chair
F. Gámiz
University of Granada
Spain
Technical Program Chair
C. Medina-Bailón
University of Granada
Spain
International Steering Committee
D. Esseni
University of Udine
Italy
F. Gámiz
University of Granada
Spain
N. Goldsman
University of Maryland
USA
Y. Kamakura
Osaka University
Japan
J. Lorenz
Fraunhofer Institute for Integrated Systems and Device Technology IISB
Germany
N. Mori
Osaka University
Japan
L. F. Register
University of Texas at Austin
USA
K. Sonoda
Renesas
Japan
W. G. Vandenberghe
University of Dallas
USA
Honorary Committee
R. Dutton
Stanford University
USA
S. Selberherr
TU Wien
Austria
K. Taniguchi
Osaka University
Japan
Technical Program Committee
O. Dong-yean
SK Hynix
South Korea
L. Donetti
University of Granada
Spain
G. Eneman
IMEC
Belgium
D. Esseni
University of Udine
Italy
L. Filipovic
TU Wien
Austria
M. Fischetti
University of Texas at Dallas
USA
V. Georgiev
University of Glasgow
UK
E. Guichard
Silvaco
USA
T. Herrmann
Global Foundries
Germany
J. Lorenz
Fraunhofer IISB
Germany
M. Karner
Global TCAD Solutions
Austria
Y.-S. Kim
Samsung Electronics
Republic of Korea
S. Martinie
CEA-LETI
France
V. Moroz
Synopsys
USA
P. Oldiges
Sandia National Laboratories
USA
J. L. Padilla
University of Granada
Spain
A. Schenk
ETH Zurich
Switzerland
K. Sonoda
Renesas Electronics
Japan
S. Souma
Kobe University
Japan
W. G. Vandenberghe
University of Texas at Dallas
USA
J. Wu
TSMC
Taiwan
Local Organizing Committee
F. Gámiz
University of Granada
Spain
C. Medina Bailón
University of Granada
Spain
C. Sampedro
University of Granada
Spain
L. Donetti
University of Granada
Spain
J. L. Padilla
University of Granada
Spain
C. Navarro
University of Granada
Spain
C. Márquez González
University of Granada
Spain