Power Electronics I
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10:30 – 11:00 |
Analysis of Uniaxial Stress Impact on Drift Velocity of 4H-SiC by Full Band Monte Carlo Simulation T. Nishimura, K. Eikyu, K. Sonoda and T. Ogata Renesas Electronics Corporation (Japan) |
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11:00 – 11:30 |
Calculation of the mobility in Al2O3/GaN electron channel: Effect of p-doping and comparison with experiments B. Rrustemi1,2, F. Triozon1, M.-A. Jaud1, W. Vandendaele1 and G. Ghibaudo2 1Univ. Grenoble Alpes, CEA, LETI (France) 2Univ. Grenoble Alpes, IMEP-LAHC MINATEC (France) |
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11:30 – 12:00 |
TCAD-based design and verification of the components of a 200 V GaN-IC platform P. Vudumula1, T. Cosnier2, O. Syshchyk2, B. Bakeroot3 and S. Decoutere2 1Department of Electrical Engineering, KU Leuven (Belgium) 2IMEC (Belgium) 3Center for Microsystems Technology, IMEC and Ghent University (Belgium) |
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12:00 – 12:30 |
Development of an Ensemble Monte Carlo Simulator for High-Power Semiconductor Devices with Self-Consistent Electromagnetism and GPU Implementation S.J. Cooke1 and M.G. Ancona1,2 1Electronics Science and Technology Division, Naval Research Laboratory Washington (USA) 2Department of Electrical and Computer Engineering, Florida State University (USA) |
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12:30 – 13:00 |
Investigation of effects of lateral boundary conditions on current filament movements in Trench-Gate IGBTs Takeshi Suwa Toshiba Electronic Devices & Storage Corporation (Japan) |