Monday, September 8,
2014 Advanced device technologies take advantage of the carrier characteristics
in an ultimate way. Consequently, observed phenomena of such advanced devices
reveal these fundamental features of the underlying carrier dynamics.
As compact device modeling requires explicit extraction of the
observed device features and properties in combination with a simple physics-based
mathematical description, a particularly deep insight into the carrier dynamics
of advanced devices becomes possible.
Such a precise compact modeling of observed phenomena including the understanding
of the device carrier dynamics is the purpose of this workshop, which
additionally aims at providing a complementation of TCAD for better
understanding of the physics of advanced semiconductor devices. Mitiko Miura-Mattausch (Hiroshima University, Japan)
Topics: - Compact modeling for all kinds of devices
- Device characterization as well as parameter
extraction techniques
- Circuit simulation techniques
- Software related developments
Invited Speakers: - Junichi Takeya (University of Tokyo, Japan)
Physics of charge transport in organic field-effect transistors
- Christoph Jungemann (RWTH Aachen University, Germany)
Validity of Macroscopic Noise Models in the Case of High-Frequency
Bipolar Transistors
- Neil Goldsman (University of
Maryland, USA)
Key Issues in the Modeling of SiC Electronic Devices
- Chenyue Ma (Hiroshima University,
Japan)
Universal Model of the Negative
Bias Temperature Instability (NBTI) Effect for Circuit Aging Simulation
- Dietmar Warning (Creative Chips GmbH, Germany)
NGSPICE
– an Open Platform for Modeling and Simulation
- Art
Schaldenbrand (Cadence Design Systems,
Japan)
Benefits of Verilog-A for Behavioral Modeling and
Compact Modeling
- Peter Lee (Micron
Memory Japan, Inc.)
Compact Model Coalition: World-Wide Model Standardization for an
Expanding Industry
Program:
The Workshop program is available here.
If you have any
question, please contact Prof. Mitiko Miura-Mattausch (mmm@hiroshima-u.ac.jp).
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