TECHNICAL PROGRAM
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TECHNICAL PROGRAM
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Program for: Thursday, September7, 2000, Poster Session
Friday, September 8, 2000
REGISTRATION:
Tuesday, September 5, 6:00 - 8:00pm
Wednesday, September 6, 7:30am - 2:00pm
| 8:15 - 8:20 | Opening Remarks, John Faricelli |
| 8:20 - 8:30 | Presenting IEEE EDS Special Award to: Don Scharfetter for "seminal contribution to the computer modeling of power semiconductor devices" |
INVITED TALKS |
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| 8:30 - 9:15 I-1 |
"Essential Physics of Carrier Transport in Nanoscale MOSFETs" Mark Lundstrom, Purdue University |
| 9:15 - 10:00 I-2 |
"The State of the Art in Interconnect Simulation" Siegfried Selberherr, Technische Universitaet Wien |
| Break (30 minutes) | |
| 10:30 - 11:15 I-3 |
"Predictive Technology Characterization, Missing Links Between TCAD and Compact Modeling" Colin C. McAndrews, Motorola |
| 11:15 - 12:00 I-4 |
"First-Principles-Based Predictive Simulations of B Diffusion and Activation in Ion Implanted Si" Tomas Diaz de la Rubia, Lawrence Livermore National Laboratory |
Session 1 - Devices: Monte Carlo Simulation | |
1:40 - 2:05 1-1 |
"MOSFET Modeling Into the Ballistic Regime" J.D. Bude, Bell Laboratories, Lucent Technologies, Murray Hill, NJ |
| 2:05 - 2:30 1-2 |
"Efficient Monte Carlo Device Simulation with Automatic Error Control" F.M. Bufler, A. Schenk, and W. Fichtner, ETH Zürich, Zürich, Switzerland |
| 2:30 - 2:55 1-3 |
"A Fast Three-Dimensional MC Simulator for Tunneling Diodes" M. Wagner, H. Mizuta, and K. Nakazato, Hitachi Europe Ltd., Cambridge, United Kingdom |
| Break (15 minutes) | |
| 3:10 - 3:35 1-4 |
"Simulation of Hot Hole Currents in Ultra-thin Silicon Dioxides: The Relationship Between Time to Breakdown and Hot Hole Currents" T. Ezaki, H. Nakasato, T. Yamamoto, and M. Hane, NEC Corporation, Sagamihara, Japan |
| 3:35 - 4:00 1-5 |
"Coupled Monte Carlo Simulation of Si and SiO2 Transport in MOS Capacitors" P. Palestri, L. Selmi, M. Pavesi*, F. Widdershoven**, and E. Sangiorgi. DIEGM, Udine, Italy, *Dept. of Physics and INFM, Parma, Italy and **Philips Research Laboratories, Eindhoven, The Netherlands |
| 4:00 - 4:25 1-6 |
"Spatial Analysis of the Electron Transit Time in a Silicon/Germanium Heterojunction Bipolar Transfer by Drift-Diffusion, Hydrodynamic, and Full-Band Monte Carlo Simulation" C. Jungemann, B. Neinhüs, and B. Meinerzhagen, Universität Bremen, Bremen, Germany |
| 4:25 - 4:50 1-7 |
"A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents" P. Palestri, L. Selmi, F. Hurkx*, and J. Slotboom*, DIEGM, Udine, Italy and *Philips Research Nat Lab. Eindhoven, The Netherlands |
| 6:00 - 10:00pm | Dinner at the Tillicum Village |