VPAD 1993 Proceedings

• J.-G. Ahn, Y.-J. Park, H.S. Min:
  "A New Hydrodynamic Model for High Energy Tail Electrons";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 28 - 29.
  
  
• N. Aluru, K.H. Law, P.M. Pinsky, A. Raefsky, R.J. Goossens, R.W. Dutton:
  "Space-Time Galerkin/Least-Squares Finite Element Formulation for the Hydrodynamic Device Equations";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 16 - 17.
  
  
• H. Aoki, E. Khalily:
  "A New Semi-Empirical Model for Amorphous Silicon Thin-Film-Transistors";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 138 - 139.
  
  
• R. Bauer, M. Stiftinger, S. Selberherr:
  "Capacitance Calculation of VLSI Multilevel Wiring Structures";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 142 - 143.
  
  
• H. Brand, S. Selberherr:
  "Electrothermal Analysis of Latch-Up in an IGT";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 116 - 117.
  
  
• L. Colalongo, M. Rudan:
  "ROW-Type Methods Applied to the Time Discretization of Device Equations";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 124 - 125.
  
  
• D. Collard, V. Senez, B. Baccus:
  "2D Process Simulation with Accurate Dopant and Stress Profiles Calculations";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 92 - 93.
  
  
• P. Conti, M. Tomizawa, A. Yoshii:
  "A System for 3D Simulations of Complex Si and Heterostructure Devices";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 14 - 15.
  
  
• N.E. Cowern:
  "A Physics-Based Model for Transient Diffusion of Dopants in Si";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 50 - 51.
  
  
• K.M. De Meyer, R. Cartuyvels, L. Dupas:
  "A Simulation Strategy for Process Optimization";
  Talk: Conference, Nara, Japan (invited); 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 80 - 83.
  
  
• N.R. Desai, K.V. Hoang:
  "Integrated Modeling of the AIGaAs/GaAs Heterojunction Bipolar Transistor";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 158 - 159.
  
  
• S.T. Dunham:
  "Consistent Quantitative Models for the Coupled Diffusion of Dopants and Point Defects in Silicon";
  Talk: Conference, Nara, Japan (invited); 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 46 - 49.
  
  
• R.W. Dutton:
  "Algorithms and TCAD Software Using Parallel Computation";
  Talk: Conference, Nara, Japan (invited); 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 10 - 12.
  
  
• M. Ershov, V. Ryzhii:
  "Electron Transport Models for Unstrained and Strained Si and SiGe";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 110 - 111.
  
  
• W. Fichtner:
  "From Layout to Circuit:Multi-Dimensional Process and Device Simulation - Current Status and Open Problems";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 2 - 5.
  
  
• C. Fiegna, H. Iwai, T. Kimura, S. Nakamura, E. Sangiorgi, B. Ricco:
  "Monte Carlo Analysis of Hot Carrier Effects in Ultra Small Geometry MOSFETs";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 102 - 103.
  
  
• M. Hane, S. Hasegawa:
  "Dynamic-Clustering and Grain-Growth Kinetics Effects on Dopant Diffusion in Polysilicon";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 52 - 53.
  
  
• K. Harafuji, A. Misaka, M. Kubota, N. Nomura:
  "Modeling of Surface Reactions for Predicting Dry-Etched Profiles";
  Talk: Conference, Nara, Japan (invited); 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 76 - 79.
  
  
• A. Hiroki, S. Odanaka, A. Goda:
  "Massively Parallel Computation for Monte Carlo Device Simulation";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 18 - 19.
  
  
• S. Ho, A. Moriyoshi, I. Ohubu, O. Kagaya, H. Mizuta, K. Yamaguchi:
  "Theoretical Analysis of Transconductance Enhancement due to Electron Concentration Dependent Screening in Heavily Doped Systems";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 174 - 175.
  
  
• S. Ho, M. Oohira, O. Kagaya, A. Moriyoshi, H. Mizuta, K. Yamaguchi:
  "Dynamic Simulation of Multiple Trapping Processes and Anomalous Frequency Dependence in GaAs MESFETs";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 30 - 31.
  
  
• K. Horio, K. Satoh, H. Kusuki:
  "Two-Dimensional Simulation of GaAs MESFETs Including Impact Ionization of Carriers and Carrier Trapping in the Semi-Insulating Substrate";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 100 - 101.
  
  
• T. Iizuka, H. Kato, M. Fukuma:
  "An Influence of Electron-Electron Scatterings to Distribution Functions";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 106 - 107.
  
  
• G.-Y. Jin, Y.-J. Park, H.S. Min:
  "A Simple Hot Electron Transport Model and its Prediction of Si-SiO₂ Injection Probability";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 166 - 167.
  
  
• M. Johnson, A.J. Strojwas, D.W. Greve:
  "Unified Set of Models for Minority Carrier Transport Parameters in Heavily Doped Monosilicon and Polysilicon";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 178 - 179.
  
  
• K. Kai, S. Kuroda, K. Nishi:
  "Two-Dimensional Modeling of Self-Aligned Silicide Process with a General-Purpose Process Simulator OPUS";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 66 - 67.
  
  
• A. Kato, M. Katada, T. Hattori:
  "An Efficient Decoupled Algorithm for Solving Energy Transport Equations";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 126 - 127.
  
  
• Z.M. Kovacs, A. Benedetti, A. Graffi, G. Masetti:
  "A New Multilevel Simulator for MOS Integrated Circuits";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 160 - 161.
  
  
• T. Kunikiyo, Y. Kamakura, M. Yamaji, H. Mizuno, M. Takenaka, K. Taniguchi, C. Hamaguchi:
  "Adjustable Parameter Free Monte Carlo Simulation for Electron Transport in Silicon Including Full Band Structure";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 40 - 41.
  
  
• J.B. Kuo, B.Y. Chen, H.P. Chen, T.C. Lu, J.H. Sim:
  "A Numerical Simulation Study of SiGe/Si-Heterostructured PMOS and Bipolar Devices";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 104 - 105.
  
  
• I. Kurachi, N. Hwang, L. Forbes:
  "Lifetime Prediction Model for Analog Devices Based on Drain Conductance Degradation due to Hot Carrier Injection";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 130 - 131.
  
  
• S. Kuroda, M. Okihara, N. Hirashita, K. Nishi:
  "Effects of Nitride Viscosity on the Stress Distribution in LOCOS Structure";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 90 - 91.
  
  
• C.H. Lee, U. Ravaioli:
  "Monte Carlo Simulation of Silicon Devices";
  Talk: Conference, Nara, Japan (invited); 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 36 - 39.
  
  
• G.-H. Lee, S.S. Chung:
  "Hydrodynamic Modeling of the Hot Electron Effect in Submicron MOSFET's Using a Simplified Energy Balance Equation";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 108 - 109.
  
  
• P.M. Lee:
  "New Insights in Optimizing CMOS Inverter Circuits with Respect to Hot Carrier Degradation";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 154 - 155.
  
  
• S.-W. Lee:
  "Characterization of Metallurgical Channel Length and Gate Electrode's Physical Dimension for Device Analysis and Calibration of Numerical Process and Device Simulators";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 112 - 113.
  
  
• F.A. Leon, S. Tazawa, K. Saito, A. Yoshii, D.L. Scharfetter:
  "Numerical Algorithms for Precise Calculation of Surface Movement in 3D Topography Simulation";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 58 - 59.
  
  
• C.M. Li, T. Crandle, M. Temkin, P. Hopper:
  "A Two-Dimensional Process Model for Silicide Growth";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 68 - 69.
  
  
• J. Lorenz, R.J. Wierzbicki:
  "Efficient Multidimensional Simulation of Ion Implantation into Multilayer Structures";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 84 - 85.
  
  
• S. Matsuda, N. Itoh, C. Yoshino, Y. Tsuboi, Y. Katsumata, H. Iwai:
  "Analysis of Mechanical Stress Associated with Trench Isolation Using a Two-Dimensional Simulation";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 64 - 65.
  
  
• H. Miura, N. Saito, H. Ohta, N. Okamoto, H. Masuda:
  "Mechanical Stress Design System for Semiconductor Devices";
  Talk: Conference, Nara, Japan (invited); 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 60 - 63.
  
  
• M. Miura-Mattausch, W. Bergner, D. Scharfetter:
  "A New Consistent Description of MOSFET Performance for Circuit Simulation";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 134 - 135.
  
  
• K. Nabors, M. Kamon, J. White:
  "Multipole Accelerated 3D Interconnect Analysis";
  Talk: Conference, Nara, Japan (invited); 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 72 - 75.
  
  
• K. Nishinohara, H. Tanimoto, N. Konishi, S. Takagi, N. Shigyo:
  "Non-Universal Roll-Off of MOSFET Mobility and V_Ds Effect in Mobility Measurement";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 176 - 177.
  
  
• J.Z. Peng, S. Longcor, J. Frey:
  "Efficient Deep Submicron Flash-EPROM Device Simulation Using Energy Transport Model";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 168 - 169.
  
  
• A. Pierantoni, P. CiampoIini, A. Liuzzo, G. Baccarani:
  "A Unified Model for the Simulation of Small-Geometry Devices";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 26 - 27.
  
  
• M.R. Pinto, J. Bude, C.S. Rafferty:
  "Simulation of ULSI Silicon MOSFETs";
  Talk: Conference, Nara, Japan (invited); 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 22 - 25.
  
  
• J. Poltz:
  "Modeling VLSI Interconnections for Cross-Talk Simulation";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 144 - 145.
  
  
• C.S. Rafferty, M.D. Giles, H.-H. Vuong, S.A. Eshraghi, M.R. Pinto, S.J. HilIenius:
  "Anomalous Short-Channel Body Coefficients due to Transient Enhanced Diffusion";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 148 - 149.
  
  
• H.C: Read, S. Kumashiro, A. Strojwas:
  "Efficient Transient Device Simulation with AWE Macromodels and";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 34 - 35.
  
  
• N. Sano:
  "Energy Broadening Associated with Finite Collision Duration in Hot Carrier Transport in Semiconductors";
  Talk: Conference, Nara, Japan (invited); 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 162 - 165.
  
  
• H. Sato, K. Tsuneno, H. Masuda:
  "Evaluation of Two-Dimensional Transient Enhanced Diffusion of Phosphorus during Shallow Junction Formation";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 86 - 87.
  
  
• S. Satoh, N. Nakayama:
  "Parallel Computing Using a Mixed-Level Device-Circuit Simulator";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 128 - 129.
  
  
• E.W. Scheckler, T. Ogawa, S. Shukuri, E. Takeda:
  "Material Representations and Algorithms for Nanometer-Scale Lithography Simulation";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 56 - 57.
  
  
• A. Schenk, U. Krumbein, S. Müller, H. Dettmer, W. Fichtner:
  "On the Origin of Tunneling Currents in Scaled Silicon Devices";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 96 - 97.
  
  
• P. Scrobohaci, T.-W. Tang:
  "A Non-Local Formulation of Impact Ionization for Silicon";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 172 - 173.
  
  
• L. Selmi, C. Fiegna, E. Sangiorgi, R. Bez, B. Ricco:
  "A Study of Injection Conditions in the Substrate Hot Electron Induced Degradation of n-MOSFETs";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 156 - 157.
  
  
• N. Shigyo, Y. Niitsu:
  "Effects of Physical Models on Bipolar AC Characteristics";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 114 - 115.
  
  
• J.H. Sim, J.B. Kuo:
  "An Analytical Delayed-Turn-On Model for Accumulation-Type Ultra-Thin SOl PMOS Devices Operating at 77K";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 132 - 133.
  
  
• T. Skotnicki, G. Merckel, C. Denat:
  "MASTAR - A Model for Analog Simulation of Sub-Threshold, Saturation, and Weak Avalanche Regions in MOSFETs";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 146 - 147.
  
  
• L. L. So, D. Chen, Z. Yu, R.W. Dutton:
  "Robust Simulation of GaAs Devices Using Energy Transport Model";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 32 - 33.
  
  
• M. Stecher, B. Meinerzhagen, I. Bork, J.M. Krücken, P. Maas, W.L. Engl:
  "Influence of Energy Transport Related Effects on NPN BJT Device Performance and ECL Gate Delay Analyzed by 2D Parallel Mixed Level Device/Circuit Simulation";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 170 - 171.
  
  
• M.A. Stettler, M.A. Alam, M.S. Lundstrom:
  "Memory Efficient Scattering Matrix Device Simulation by Decomposing the Effect of Carrier Scattering and Field Acceleration";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 44 - 45.
  
  
• H. Stippel, S. Selberherr:
  "Three-Dimensional Monte Carlo Simulation of Ion Implantation with Octree-Based Point Location";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 122 - 123.
  
  
• E. Strasser, K. Wimmer, S. Selberherr:
  "A New Method for Simulation of Etching and Deposition Processes";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 54 - 55.
  
  
• K. Suzuki, T. Tanaka, H. Horie, Y. Arimoto, T. Itoh:
  "Analytical Surface Potential Expression for Double-Gate SOl MOSFETs";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 150 - 151.
  
  
• K. Tanaka, P. CiampoIini, A. Pierantoni, G. Baccarani:
  "Comparison between a Posteriori Error Indicators for Adaptive Mesh Generation";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 118 - 119.
  
  
• E. Tomacruz, J. Sanghavi, A. Sangiovanni-Vincenlelli:
  "Algorithms for Drift-Diffusion Device Simulation Using Massively Parallel Processors";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 20 - 21.
  
  
• Y. Tsuboi, C. Fiegna, E. Sangiorgi, B. Ricco, T. Wada, Y. Katsumata, H. Iwai:
  "Analysis of Collector Signal Delay in Bipolar Devices Using a Monte Carlo Method";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 98 - 99.
  
  
• K. Tsuneno, H. Sato, H. Masuda:
  "Modeling and Simulation of Anomalous Degradation of Sub-μm NMOS's Current-Driving due to Velocity-Saturation Effect";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 152 - 153.
  
  
• T.-L. Tung:
  "Feature-Scale Modeling and Characterization of Oxide APCVD";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 70 - 71.
  
  
• T. Uchida, N. Kotani, N. Tsubouchi:
  "Verification of the Viscoelastic Oxidation Model Using Simple Test Structures";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 88 - 89.
  
  
• R.H. Wang, M.S. Karasick, A.R. Neureuther:
  "Computational Evaluation of Three-Dimensional Topography Process Simulation Components";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 94 - 95.
  
  
• C. Werner:
  "Equipment Simulation - State of the Art and Future Challenges";
  Talk: Conference, Nara, Japan (invited); 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 6 - 9.
  
  
• W.T. Wong, D.X. Yang, R.W. Dutton, J.D. Plummer:
  "Solid Modeling-Based Parametric Operations for Device Design";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 136 - 137.
  
  
• D. Yang, R.W. Dutton, K.H. Law:
  "δ-Zone Triangulation: A Boundary Refinement Scheme for Quadtree Based Mesh";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 120 - 121.
  
  
• J.-J. Yang, S.S. Chung, P.-C. Chou, C.-S. Chen, M.-S. Lin:
  "A Consistent Drain and Substrate Current Model of LDD MOS Devices for Circuit Simulation";
  Poster: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 140 - 141.
  
  
• C.-S. Yao, D. Chen, R.W. Dutton, F. Venturi, E. Sangiorgi, A. Abramo:
  "An Efficient Impact Ionization Model for Silicon Monte Carlo Simulation";
  Talk: Conference, Nara, Japan; 1993-05-14 - 1993-05-15; in: "Proc. of VPAD", (1993), 0-7803-1338-0; 42 - 43.