VPAD 1991 Proceedings

• Y. Akiyama, Y. Hatanaka, M. Asou, Y. Tamegaya, H. Ikeuchi, H. Kuge:
  "Development of a Unified Process and Device Simulation Environment - P&D Workbench";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 92 - 93.
  
  
• A. Asai, I. Hanyu, K. Hikosaka:
  "Improved Projection Lithography Image Illumination by Sources far from Optical Axis";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 84 - 85.
  
  
• V. Axelrad:
  "A General Purpose Device Simulator Including Carrier Energy Balance Based on PISCES-2B";
  Poster: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 54 - 55.
  
  
• H.S. Bennett, J.R. Lowney, M. Tomizawa, T. Ishibashi:
  "Experimentally Verified Majority and Minority Mobilities in Heavily Doped GaAs for Device Simulations";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 114 - 115.
  
  
• C. Bergonzoni, E. Camerlenghi, G. Crisenza:
  "A Method for the Analysis of EPROM Cells Scaling Down";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 30 - 31.
  
  
• R. Booth, L. Dupas, R. Cartuyvels, K. De Meyer:
  "New Technique to Improve Response-Surface-Method Model Fitting Accuracy for Process Technology and Device Design Optimization";
  Poster: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 74 - 75.
  
  
• E.M. Buturla, J.B. Johnson, T.D. Linton, S.H. Voldman:
  "DRAM Design Utilizing 2D and 3D Device Simulation";
  Talk: Conference, Kanagawa, Japan (invited); 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 18 - 21.
  
  
• Z. Chai, M. Berger:
  "Electrothermal Modeling of SOl MOSFETs";
  Poster: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 60 - 61.
  
  
• Y.-H. Cheng, Y.-Y. Wang:
  "Analysis of the Drain Breakdown Mechanism in Thin-Film SOl MOSFETs";
  Poster: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 62 - 63.
  
  
• S.S. Chung, P.-C. Hsu, J.-S. Lee:
  "A Compact SPICE LDD MOS Transistor Model that Includes the Hot Electron Induced Substrate";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 102 - 103.
  
  
• P. Conti, G. Masetti, C. Turchetti:
  "An Accurate CAD-Oriented Analytical Model for Short-Channel MOS Transistor Capacitances";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 106 - 107.
  
  
• R.W. Dutton:
  "Another Look at TCAD - Challenges of the 1990's";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 1 - 3.
  
  
• C. Fiegna, E. Sangiorgi, F. Venturi, A. Abramo, B. Ricco:
  "Optimization of Physical Parameters for High Energy Transport Simulation in Si Based on Efficient Electron Energy Distribution Calculations";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 40 - 41.
  
  
• B. Freydin, E. Velmre, A. Udal:
  "Electrothermal Simulation of Power Semiconductor Devices";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 28 - 29.
  
  
• M. Fujinaga:
  "3D Topography Simulator for Sequential Processes";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 80 - 83.
  
  
• Y. Fuseya, K. Horio:
  "Transient Simulations of GaAs MESFETs on Semi-Insulating Substrates Compensated by Deep Levels";
  Poster: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 66 - 67.
  
  
• A. Gerodolle, A. Poncet, C. Corbex, S. Martin:
  "From Process Simulation to Device Optimization: How to Satisfy the Requirements of Both Research and Industry";
  Talk: Conference, Kanagawa, Japan (invited); 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 86 - 89.
  
  
• P.B. Griffin, P.A. Packan, J.D. Plummer:
  "Consistent Models for Point Defects in Silicon";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 4 - 7.
  
  
• K. Harazaki, H. Hayashi, K. Fujii, T. Inufushi:
  "Modeling of a Phase-Shifting Mask";
  Poster: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 50 - 51.
  
  
• B. Hu, A. Seidl, G. Neumayer, R. Buchner, K. Haberger:
  "Process Simulation for Laser Recrystallization";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 16 - 17.
  
  
• G.-Y. Jin, Y.-J. Park, H.-S. Min:
  "An Application of the Ramo Shockley Theorem for Calculation of the Terminal Currents of a MOSFET by the Particle Simulation";
  Poster: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 52 - 53.
  
  
• I. Kamohara:
  "Low Supply Voltage BiNMOS Operation Analysis Using a Full Device Simulation on a BiNMOS Gate Circuit";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 24 - 25.
  
  
• T.H. Kim, I.C. Kim, B.H. Rho, K.Y. Lee, C.G. Hwang, D. Chin, Y.E. Park:
  "SER/ALPEN Analysis System for Future Memories Technology";
  Poster: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 58 - 59.
  
  
• J.B. Kuo, Y.M. Chen:
  "Device-Level Analysis of a 1μm BiCMOS Inverter Circuit Operating at 77K";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 26 - 27.
  
  
• S. Kuroda, K. Nishi:
  "Simulation of Stress Redistribution on LOCOS Structure during Oxidation and Subsequent Cooling Down";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 14 - 15.
  
  
• M. Lanzoni, J. Sune, C. Riva, P. Ghezzi, P. Olivo, B. Ricco:
  "Advanced Spice-Like Modeling of E²PROM Cells";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 134 - 135.
  
  
• K.Y. Lee, Y.- H. Kim, C.G. Hwang:
  "New Three-Dimensional Simulator for Electron Beam Lithography";
  Poster: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 44 - 45.
  
  
• P.M. Lee, P.K. Ko, C. Hu:
  "Circuit Reliability Simulation: An Overview";
  Talk: Conference, Kanagawa, Japan (invited); 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 130 - 133.
  
  
• S.-C. Lee, T-W. Tang:
  "Hydrodynamic Modeling of Silicon BJT with Monte Carlo Calibrated Transport Coefficients";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 42 - 43.
  
  
• B. Meinerzhagen, H.J. Peifer, R. Thoma, W.L. Engl:
  "Modeling of Impact Ionization by Consistent Monte Carlo and Hydrodynamic Models in Comparison with Measurements";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 56 - 57.
  
  
• A. Mishima, J. Tanaka, H. Matsuo, K. Tago:
  "Development of Simulator for Semiconductor Devices with Arbitrary Curved Surfaces Using High-Speed Algorithm on Voronoi Discretization Method";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 128 - 129.
  
  
• H. Miura, N. Saito, H. Ohta, S. Sakata, N. Okamoto:
  "Two-Dimensional Stress Analysis during Thermal Oxidation";
  Poster: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 48 - 49.
  
  
• M. Miura-Mattausch, U. Weinert:
  "Unified MOSFET Model for All Channel Lengths Down to Quarter Micron";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 98 - 99.
  
  
• Y. Oda, A. Raefsky, R.W. Dutton:
  "Numerical Techniques on Enhancing Robustness for Stress-Dependent Oxidation Simulation Using Finite Element Method in SUPREM-IV";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 124 - 125.
  
  
• S. Odanaka, A. Hiroki:
  "A Numerical Simulation of Hot Carrier Induced Device Degradation";
  Talk: Conference, Kanagawa, Japan (invited); 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 108 - 111.
  
  
• T.K. Okada, H. Kawaguchi, S. Onga, K. Yamabe:
  "Non-Equilibrium Diffusion Process Modeling Based on Three-Dimensional Simulator and Regulated Point Defect Injection Experiments";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 8 - 9.
  
  
• P. Oldiges, M. Mukai:
  "Analytic Expressions for the Energy Dependent Electron Temperature and Effective Mass for a Realistic Band Structure Energy Transport Model";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 36 - 37.
  
  
• I. Omura, A. Nakayama:
  "A Rapid Convergence Device-Circuit Complete Coupled Simulation";
  Talk: Conference, Kanagawa , Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 126 - 127.
  
  
• P. Pichler, R. Schork, H. Ryssel:
  "Evaluation of the Point Defect Bulk Recombination Rate by Ion Implantation at High Temperatures";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 10 - 11.
  
  
• A. Pierantoni, P. Ciampolini, A. Gnudi, G. Baccarani:
  "Three-Dimensional Evaluation of Substrate Current in Recessed Oxide MOSFETs";
  Talk: Conference, Kanagawa , Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 22 - 23.
  
  
• A. Poppe, W. Schoenmarker, W. Magnus, C. Sala, R. Vankemmel, K. De Meyer:
  "An Analytic Mobility Model for Two-Dimensional Electron Gas Layers and the Implementation in a Device Simulator";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 118 - 119.
  
  
• M. Rudan, M.C. Vecchi, Z.M. Kovacs:
  "Integrated Tools for Device Optimization";
  Talk: Conference, Kanagawa, Japan (invited); 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 94 - 97.
  
  
• D. Scharfetter:
  "MOS Transistor Characterization of μ_eff, L_eff, and R_series";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 136 - 137.
  
  
• A. Seidl, P. Seegebrecht, M. Laage:
  "CAPCAL V1.3: Electrical Field Calculation with Appropriate Pre- and Postprocessing for VLSI Applications";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 64 - 65.
  
  
• S. Selberherr, F. Fasching, C. Fischer, S. Halama, H. Pimingstorfer, H. Read, H. Stippel, P. Verhas, K. Wimmer:
  "The VIENNESE TCAD System";
  Talk: Conference, Kanagawa, Japan (invited); 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 32 - 35.
  
  
• N. Shigyo, N. Konishi, H. Satake, Y. Niitsu:
  "A New Bandgap Narrowing Model Based on Corrected Intrinsic Carrier Concentration";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 112 - 113.
  
  
• M. Shirahata, N. Kotani, S. Kusunoki, Y. Akasaka:
  "A Mobility Model for Deep Submicron MOSFET Device Simulation";
  Poster: Conference, Kanagawa , Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 76 - 77.
  
  
• J.H. Sim, J.B. Kuo:
  "An Analytical Delayed-Turn-Off Model for Buried-Channel PMOS Devices Operating at 77K";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 104 - 105.
  
  
• T. Skotnicki, G. Merckel, C. Denat:
  "Simple Model of MOSFET Breakdown Characteristics: from Saturation to Snapback Sustaining Regime";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc.of VPAD", (1991), 100 - 101.
  
  
• Y. Tajima, K. Asada, T. Sugano:
  "Failure Mechanism of pn-Junction Caused by EOS";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 68 - 69.
  
  
• H. Takei, H. Hayashi, K. Fujii, T. Inufushi:
  "A Composite Model for Oxidation and Point-Defect Diffusion";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 12 - 13.
  
  
• M. Tanizawa, M. Ikeda, N. Kotani, Y. Akasaka:
  "An Analytical Model for Band-to-Band Tunneling with Impact Ionization";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 138 - 139.
  
  
• M. Tomizawa, T. Ishibashi, H.S. Bennett, J.R. Lowney:
  "Verification of Effective Intrinsic Carrier Concentrations for Numerical Simulations of Gallium Arsenide Bipolar Transistors";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 116 - 117.
  
  
• M. Tomizawa, A. Yoshii, S. Seki:
  "Graphic-Interactive Program-System for Device Simulations";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 90 - 91.
  
  
• S. Uno, S. Satoh, N. Nakayama:
  "Multisubband Effects on Universal Mobility for Electrons in MOS Inversion Layer";
  Poster: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc.of VPAD", (1991), 78 - 79.
  
  
• D. Ventura, A. Gnudi, G. Baccarani:
  "An Efficient Method for Evaluating the Energy Distribution of Electrons in Semiconductors Based on Spherical Harmonic Expansion";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 38 - 39.
  
  
• D.M. Walker, C.S. Kellen, A.J. Strojwas:
  "The PREDITOR Process Editor and Statistical Simulator";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 120 - 123.
  
  
• J. Warnock:
  "A Two-Dimensional Process Model for Chemi-Mechanical Polish Planarization";
  Poster: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 46 - 47.
  
  
• C.-S. Yao, S. Sugino, R.W. Dutton:
  "Parallelization of Monte Carlo Simulation for Submicron MOSFET on Hypercube Multiprocessors";
  Poster: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 70 - 71.
  
  
• H. Yie, S. Ya-Fei:
  "A Novel Discretization Approach Superior to S-G and SUPG Method";
  Talk: Conference, Kanagawa, Japan; 1991-05-26 - 1991-05-27; in: "Proc. of VPAD", (1991), 72 - 73.