VPAD 1990 Proceedings

• G. Baccarani, J.M. Stork:
  "Minimization of Impact Ionization in Silicon BJTs";
  Talk: Conference, Kawasaki, Japan (invited); 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 16 - 19.
  
  
• B. Baccus, D. Morel, D. Collard, E. Dubois:
  "Development Tools for Simulation Programs Application to Multilayer Process Simulation";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 98 - 99.
  
  
• S.G. Chamberlain, J.W. Roberts:
  "Energy-Momentum Transport Computer Simulator for VLSI Device Structures";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 106 - 107.
  
  
• Y.M. Chen, K.H. Lou, J.B. Kuo:
  "Two-Dimensional Transient Analysis of a BiNMOS Transistor Operating at 77K Using a Modified PISCES Program";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 42 - 44.
  
  
• P. Conti, G. Heiser, M. Westermann, W. Fichtner:
  "Software Tools for Three-Dimensional Device Simulation";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 68 - 69.
  
  
• N.E. Cowern:
  "Establishing the Physical Basis of Advanced Diffusion Models";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 50 - 51.
  
  
• A.S. Desouki, Y.-J. Park, H.S. Min:
  "Distributed Modeling of Base Potential of Bipolar Transistor Including High Injection Effect";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 138 - 140.
  
  
• R.W. Dutton, Z. Yu:
  "Algorithms for 'Curve-Tracer' Mode in Simulation of Devices with Highly Nonlinear Characteristics";
  Talk: Conference, Kawasaki, Japan (invited); 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 24 - 27.
  
  
• J.G. Fossum, J. Jin:
  "Non-Quasi-Static Modeling/Implementation of BJT Current Crowding for Semi-Numerical Mixed-Mode Device/Circuit Simulation";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 132 - 134.
  
  
• J. Frey:
  "EPROM Design Using Device Simulation";
  Talk: Conference, Kawasaki, Japan (invited); 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 126 - 129.
  
  
• K. Fukuda, S. Baba, K. Nishi:
  "Monte Carlo Simulation of Deep Submicron Si MOSFETs";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 36 - 37.
  
  
• M. Fukuma, T. Iizuka:
  "Evaluating Momentum and Energy Relaxation Times of Electrons, Based on Distribution Functions";
  Talk: Conference, Kawasaki, Japan (invited); 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 20 - 21.
  
  
• T. Fuse, T. Hamasaki, S. Watanabe:
  "Physically Based Collector- and Base-Resistance Model for Submicron Bipolar Transistor";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 136 - 137.
  
  
• W. Haensch:
  "Hot Carrier Analysis of MOSFET Beyond the Substrate Current Criterion";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 156 - 157.
  
  
• M. Hane, M. Fukuma:
  "Recoil Atom Simulation Using Monte Carlo Method";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 100 - 101.
  
  
• S. Hidalgo, F. Berta, J. Rebollo, J. Millan:
  "Design Aspects of RESURF LDMOS Transistors";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 56 - 57.
  
  
• H. Jacobs, K. Steger:
  "SATURN - A Robust Process and Device Simulation System for Engineering Applications";
  Talk: Conference, Kawasaki, Japan (invited); 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 28 - 31.
  
  
• S. Kamohara, T. Kobayashi:
  "Theoretical Model to Explain Dopant Segregation to the Grain Boundaries and Grain Growth";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 52 - 53.
  
  
• P.K. Ko:
  "Modeling Deep Submicron MOS Devices for Circuit Simulation";
  Talk: Conference, Kawasaki, Japan (invited); 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 162 - 165.
  
  
• J . Lee, A.J. Strojwas, T.E. Schlesinger, A.G. Milnes:
  "Electrical Isolation Rule for GaAs ICs Fabricated on LEC Substrates";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 62 - 63.
  
  
• B. Lojek:
  "CAD of Processes for Silicon High Speed Devices";
  Talk: Conference, Kawasaki, Japan (invited); 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 118 - 121.
  
  
• H. Masuda, Y. Aoki:
  "MOSFET Modeling for VLSI Circuit Simulation";
  Talk: Conference, Kawasaki, Japan (invited); 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 166 - 169.
  
  
• J.R. McMacken, S.G. Chamberlain:
  "A Two-Dimensional Transient Numerical Model for Amorphous Silicon Devices";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 60 - 61.
  
  
• B. Meinerzhagen, J.M. Krücken, K.H. Bach, F.M. Stecher, W.L. Engl:
  "A Modular Approach to Parallel Mixed Level Device Circuit Simulation";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 170 - 172.
  
  
• M. Miyama, G. Yokomizo, K. Nakajo:
  "Evaluation of Circuit Reduction for Pattern Based Circuit Simulation";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 146 - 147.
  
  
• K. Motegi, S. Watanabe:
  "Parallel Computation Method in Device Simulation";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 150 - 151.
  
  
• S. Müller, K. Kells, W. Fichtner:
  "Generation of Meshes for the Simulation of Power Devices";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 66 - 67.
  
  
• Y. Nagase, H. Goto, T. Takada:
  "Analysis of Pedestal-Collector Transistors by 2D Process and Device Simulation";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 40 - 41.
  
  
• A.R. Neureuther:
  "Modeling Resist, EM Scattering, and Topography";
  Talk: Conference, Kawasaki, Japan (invited); 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 82 - 85.
  
  
• S. Odanaka, K. Zaiki, T. Nogi:
  "Three-Dimensional Device Simulation on a Super Parallel Computer: ADENA";
  Talk: Conference, Kawasaki, Japan (invited); 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 122 - 125.
  
  
• Y. Omura, A. Nakagawa:
  "A Breakdown Voltage Simulator for Semiconductor Device TONADDE II B";
  Talk: Conference, Kawasaki , Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 58 - 59.
  
  
• K.J. Oostrum, P.P. Neary, A.M. van Run:
  "Extended Performance of SUPREM4 for Practical Applications";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 96 - 97.
  
  
• C.-W. Park, B.-J. Moon, K. Lee, M. Shur:
  "Unified I-V Model and Parameter Extraction of Submicron n-MOSFET for Circuit Simulation and Statistical Process Characterization";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 144 - 145.
  
  
• E. Rank, U. Weinert:
  "Structural Simulation in the Process Simulator MIMAS";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 86 - 89.
  
  
• B. Ricco, E. Sangiorgi, F. Venturi:
  "Monte Carlo Simulation of Semiconductor Devices";
  Talk: Conference, Kawasaki, Japan (invited); 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 6 - 9.
  
  
• G. Ruan, D. Zheng:
  "Simulation of Oxygen Implanted Distribution for SOl Structure";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 46 - 47.
  
  
• I. Saitoh, N. Natsuaki:
  "Two-Dimensional Modeling Based on the Fokker-Planck Equation for Ion Implantation";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 102 - 103.
  
  
• N. Sano, T. Aoki, M. Tomizawa, A. Yoshii:
  "Physical Mechanism of Impact Ionization in Si: A Monte Carlo Analysis";
  Talk: Conference, Kawasaki , Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 34 - 35.
  
  
• S. Satoh, K. Suzuki, N. Nakayama:
  "Analysis of Collector Base Junction Avalanche Using an Energy Transport Model";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 38 - 39.
  
  
• W.H. Schilders:
  "Extension of the Scharfetter-Gummel Scheme for the Case of Avalanche Generation";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 158 - 159.
  
  
• W.H. Schilders, S.J. Polak:
  "Generalizations of the Box Method Using the Mixed Finite Element Method";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 174 - 179.
  
  
• S. Selberherr, H. Kosina:
  "Simulation of Nanometer MOS Devices with MINIMOS";
  Talk: Conference, Kawasaki, Japan (invited); 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 1 - 5.
  
  
• S.L. Sundaram, N. Tracht, J. Candelaria, P.J. Zdebel:
  "Modeling of Interconnect Capacitance of Multiple Conductor Package by Statistical Central Composite Design for VLSI";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 74 - 78.
  
  
• K. Suzuki, H. Horie, Y. Yamashita, Y. Kataoka, N. Nakayama:
  "Diffusion Coefficient of Boron in Tungsten Silicide";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 48 - 49.
  
  
• H. Tanimoto, N. Shigyo:
  "Discretization Problem in Device Simulation for MOSFETs: The Influence of Grid Size Near the Si/SiO₂ Interface on Simulated MOSFET Characteristics";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 72 - 73.
  
  
• M. Tanizawa, M. Ikeda, N. Kotani, Y. Akasaka:
  "A Charge Conservative Capacitance Model for Short Channel MOSFETs";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 142 - 143.
  
  
• M. Tomizawa, A. Yoshii:
  "A Study of 3D Device Description and its Delaunay Partitioning";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 70 - 71.
  
  
• W. Weber:
  "Recent Progress in Understanding Hot Carrier Degradation: New Assignments for Modeling Investigations?";
  Talk: Conference, Kawasaki, Japan (invited); 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 114 - 117.
  
  
• R. Woltjer, G.M. Paulzen:
  "A New Monitor to Predict Hot Carrier Damage of PMOSTs";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 108 - 109.
  
  
• L. Wu, Z. Yu, Z. Li:
  "Multiobjective Optimum Design for IC Fabrication Process";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 154 - 155.
  
  
• T. Yamanaka, S. Seki, K. Yokoyama:
  "Calculation of Eigenfunctions for Optical Waveguides Using a New Numerical Approach";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 152 - 153.
  
  
• Z. Yimen, T. Jianxu:
  "Simulation for Sub-Micrometer MOSFET";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 110 - 111.
  
  
• A. Yoshii, M. Tomizawa, T. Furuta, H. Taniyama:
  "Monte Carlo Calculation for Transport Study and its Application to Device Design";
  Talk: Conference, Kawasaki, Japan; 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 12 - 15.
  
  
• C. Yuan, A.J. Strojwas:
  "Modeling of Alignment Schemes in Commercial Steppers";
  Talk: Conference, Kawasaki, Japan (invited); 1990-08-20 - 1990-08-21; in: "Proc. of VPAD", (1990), 90 - 93.