VPAD 1989

VPAD 1989 Proceedings

D. Collard, B. Baccus, E. Dubois:
"Two-Dimensional Multilayer Process Simulation";
Talk: Conference, Osaka, Japan (invited); 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 15 - 16.
A. Doganis, K. Walsh, P. Linardes:
"EXModeler Software for Constructing SPICE Models and Macro-Models for Complex VLSI Structures";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 76 - 77.
R.W. Dutton, D.Y. Cheng:
"Boundary Conditions in Mixed-Mode Device SimuIation";
Talk: Conference, Osaka, Japan (invited); 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 30 - 31.
W.L. Engl, A. Emunds, B. Meinerzhagen, H.J. Peifer, R. Thoma:
"Bridging the Gap Between the Hydrodynamic and the Monte Carlo Model";
Talk: Conference, Osaka, Japan (invited); 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 32 - 33.
J. Frey:
"Device Simulation for 0.1μm MOSFETs - Performance and Reliability";
Talk: Conference, Osaka, Japan (invited); 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 34 - 35.
M. Fujinaga, N. Kotani, T. Kunikiyo, H. Oda, M. Shirahata, Y. Akasaka:
"Three-Dimensional Topography Simulation for Etching";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 23 - 24.
K. Fukuda, S. Baba, J. Ueda:
"A New Monte Carlo Simulator of Si MOSFETs";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 36 - 37.
S. Fukuda, N. Shigyo, K. Kato:
"Examination of Boundary Location Influence on Periodic Wiring Capacitance Simulation";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 58 - 59.
M.D. Giles:
"Process Modeling for Submicron Silicon Technology";
Talk: Conference, Osaka, Japan (invited); 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 13 - 14.
K. Horio, K. Asada, Y. Fuseya, H. Kusuki, H. Yanai:
"Device Modeling of GaAs MESFETs for LSI: Importance of Acceptors in the Semi-Insulating Substrate";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 62 - 63.
M. Ikegawa, J. Kobayashi:
"Deposition Profile Simulation Using the Monte Carlo Method";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 21 - 22.
S. Inohira, T. Shinmi, K. Iida, F. Nakazawa:
"A Transistor Parameter Extraction System - TPARA";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 74 - 75.
Y. Iriye, Y. Mitsumatsu, T. Ishizuka:
"POLAR-2D/A: Simulation of Silicon Thermal Oxidation Using BFC (Boundary Fitted Coordinate System)";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 9 - 10.
J . Lee, A.J. Strojwas, T.E. Schlesinger, A.G. Milnes:
"A Stable Two-Dimensional Device Simulator for GaAs MESFET";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 60 - 61.
P. Lloyd:
"Process and Device Modeling Tools for Technology Characterization";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 29.
J. Lorenz:
"Process Simulation at FhG-AIS";
Talk: Conference, Osaka, Japan (invited); 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 11 - 12.
H. Masuda, R. Ikematsu, J. Mano, H. Sugihara:
"MOSTSM : MOS Transistor Sub-μm Model for Circuit Simulation - Basic I-V Model";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 70 - 71.
M. Mukai, Y. Ohtsu, A. Yagi:
"MOSFET Simulation with B-B Tunnel Current Effect";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 56 - 57.
K. Nishi, S. Kuroda, K. Kai, J. Ueda:
"Fast Three-Dimensional Process Simulation of MOS Devices";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 25 - 26.
H. Oda, N. Kotani, M. Shirahata, Y. Akasaka:
"Carrier Temperature Model Including Energy Flux";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 54 - 55.
K. Ohe, S. Odanaka:
"Characterization of Shallow Trench Isolated n-MOSFET with Sidewall Implantation Using a 3D Device Simulation";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 48 - 49.
M. Orlowski:
"New Three-Phase Model for Segregation and Outdiffusion Phenomena";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 1 - 2.
M.-H. Park, M.-K. Han:
"A Model for the Electric Fields in Gate-Offset Structured LDD MOSFETs";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 46 - 47.
S. Selberherr:
"Three-Dimensional Device Modeling with MINIMOS 5";
Talk: Conference, Osaka, Japan (invited); 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 40 - 41.
Y. Shibata, K. Taniguchi, C. Hamaguchi:
"A New Physical Model for Thermal Oxidation of Silicon";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 5 - 6.
N. Shigyo, T. Wada, S. Yasuda:
"Discretization Scheme for Multidimensional Current Continuity Equations";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 50 - 51.
M. Shirahata, H. Oda, N. Kotani, Y. Akasaka:
"The Limit of Applicability of the Drift-Diffusion Model";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 38 - 39.
K. Sumino, T. Ishizuka, M. Hirose:
"Two-Dimensional Device Simulator VENUS-2D/B for Amorphous Silicon";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 52 - 53.
K. Tanaka, S. Kumashiro, H. Katoh, N. Tanabe, T. Kurobe, M. Fukuma:
"A Novel Method to Describe 3D Device Structures";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 44 - 45.
M. Tanizawa, M. Ikeda, N. Kotani, Y. Akasaka:
"Submicron MOSFET Model for Circuit Simulation";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 72 - 73.
X. Tian, A.J. Strojwas:
"Numerical Integral Method for Diffusion Modeling - A New Approach for VLSI Process Simulation";
Talk: Conference, Osaka, Japan (invited); 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 3 - 4.
J.I. Ulacia, F.S. Howell, H. Koerner, C. Werner:
"Flow and Reaction Simulation of a Tungsten CVD Reactor";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 19 - 20.
H. Umimoto, S. Odanaka:
"Numerical Modeling of Oxidation Coupled with Stress Effects";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 7 - 8.
J. Wenstrand, H. Iwai, M. Norishima, G. Sasaki, Y. Niitsu, H. Tanimoto, T. Wada:
"A Manufacturing-Oriented Design Enviroment for VLSI Fabrication Processes";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 27 - 28.
K. Wu, Z. Wang, R.F. Lucas, R.W. Dutton:
"Application of Matrix Transformation Methods in Three-Dimensional Device Simulation";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 42 - 43.
Y. Yamada:
"Description of the Electron Transport in Submicron GaAs MESFETs with the Effective Mobility Including Near Ballistic Transport";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 66 - 67.
Y. Yamada, N. Shimojoh:
"Calculation of Switching Characteristics in a 0.5μm Gate GaAs MESFET Using 2D Particle Simulation";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 64 - 65.
T. Yamanaka, S. Seki, M. Tomizawa, K. Yokoyama:
"Analysis of Leakage Current in InGaAsP BH Lasers";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 68 - 69.
C. Yuan, A.J. Strojwas:
"Modeling of Optical Images of Semiconductor Structures with Large Numerical Aperture Lenses";
Talk: Conference, Osaka, Japan; 1989-05-26 - 1989-05-27; in: "Proc. of VPAD", (1989), 17 - 18.