VPAD 1988 Proceedings

• R.W. Dutton, M.E. Law, C.G. Hwang, C.S. Rafferty:
  "Coupled 2D Process/Device Models for Scaled MOS Device";
  Talk: Conference, Tokyo, Japan (invited); 1988-08-23; in: "Proc. of VPAD", (1988), 26 - 27.
  
  
• K.M. Eickhoff, W.L. Engl:
  "TOSHIE: A Table Generator for MOS Circuit Simulation";
  Talk: Conference, Tokyo, Japan; 1988-08-23; in: "Proc. of VPAD", (1988), 9 - 10.
  
  
• M.V. Fischetti, S.E. Laux:
  "Monte Carlo Simulation of Carrier Transport in Small Semiconductor Devices Including Band-Structure and Space-Charge Effects";
  Talk: Conference, Tokyo, Japan (invited); 1988-08-23; in: "Proc.of VPAD", (1988), 18.
  
  
• A. Hiroki, S. Odanaka:
  "A Mobility Model for Sub-Micrometer MOSFET Simulations Including Hot Carrier Induced Device Degradation";
  Talk: Conference, Tokyo, Japan; 1988-08-23; in: "Proc. of VPAD", (1988), 33 - 34.
  
  
• T. Iizuka, M. Fukuma:
  "Carrier Transport Analysis in Bulk Silicon Based on Carrier Distribution Evolutions";
  Talk: Conference, Tokyo, Japan; 1988-08-23; in: "Proc. of VPAD", (1988), 30 - 31.
  
  
• Y. Inoue, K. Taniguchi, C. Hamaguchi:
  "Carrier Transport Simulator Using Distribution Function";
  Talk: Conference, Tokyo, Japan; 1988-08-23; in: "Proc. of VPAD", (1988), 28 - 29.
  
  
• H. Kuroki, K. Taniguchi, C. Hamaguchi:
  "One-Dimensional Ion Implantation Model Using Boltzmann Transport Equation";
  Talk: Conference, Tokyo, Japan; 1988-08-23; in: "Proc. of VPAD", (1988), 5 - 6.
  
  
• H. Masuda, R. Ikematsu, O. Yamashiro:
  "A Completely Physically Based MOSFET Model Focusing on Channel Shortening Effects for Circuit Design";
  Talk: Conference, Tokyo, Japan; 1988-08-23; in: "Proc. of VPAD", (1988), 13 - 14.
  
  
• A. Moniwa, T. Ito, A. Sugimoto:
  "A Two-Dimensional Light Intensity Simulator: TWAIN";
  Talk: Conference, Tokyo, Japan; 1988-08-23; in: "Proc. of VPAD", (1988), 7 - 8.
  
  
• K. Nishi:
  "A Practical Model of Interfacial Impurity Flux for Process Simulation";
  Talk: Conference, Tokyo, Japan; 1988-08-23; in: "Proc. of VPAD", (1988), 3 - 4.
  
  
• H. Oda, N. Kotani, M. Shirahata, M. Fujinaga, Y. Akasaka:
  "Drift-Diffusion Type Device Simulator Including Carrier Temperature Model";
  Talk: Conference, Tokyo , Japan; 1988-08-23; in: "Proc. of VPAD", (1988), 24 - 25.
  
  
• H.J. Peifer, R. Thoma, A. Emunds, W.L. Engl:
  "Hot Carriers in a LDD MOSFET Investigated with a Monte Carlo Simulator";
  Talk: Conference, Tokyo, Japan; 1988-08-23; in: "Proc. of VPAD", (1988), 19 - 21.
  
  
• S. Satoh, H. Oka, N. Nakayama:
  "Direct Estimation of Bipolar Circuit Performance Using a Two-Dimensional Device Simulator";
  Talk: Conference, Tokyo, Japan; 1988-08-23; in: "Proc. of VPAD", (1988), 11 - 12.
  
  
• N. Shimojoh, Y. Yamada:
  "Particle Simulation of Relaxation of Energy and Momentum in GaAs MESFETs";
  Talk: Conference, Tokyo, Japan; 1988-08-23; in: "Proc. of VPAD", (1988), 22 - 23.
  
  
• T. Shinmi, S. Inohira, M. Nagata, K. Iida, S. Itoo:
  "Macro Models and Algorithms for High-Speed Simulation of Bipolar Mixed Analog-Digital Circuits";
  Talk: Conference, Tokyo, Japan; 1988-08-23; in: "Proc. of VPAD", (1988), 15.
  
  
• K. Taniguchi, Y. Shibata, C. Hamaguchi:
  "Self-Interstitial Generation Model at the SiO₂/Si Interface";
  Talk: Conference, Tokyo, Japan; 1988-08-23; in: "Proc. of VPAD", (1988), 1 - 2.
  
  
• M. Tomizawa, A. Yoshii:
  "3D Analysis for Wiring Capacitance with Finite Element Method";
  Talk: Conference, Tokyo, Japan; 1988-08-23; in: "Proc. of VPAD", (1988), 16 - 17.
  
  
• T. Wada, T. Kobori:
  "Study of Boundary Condition of Device Simulator for Tiny Circuit Element Analysis";
  Talk: Conference, Tokyo, Japan; 1988-08-23; in: "Proc. of VPAD", (1988), 32.