SISPAD 2023

SISPAD 2023 Proceedings

A. Abdi, D. Schulz:
"Resolving Inconsistencies between Discretizations for the Density Operator and the Wigner Function";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 313 - 316.
E. Abe:
"Superconducting route to quantum computing";
Talk: SISPAD, Kobe, Japan (invited); 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 1 - 4.
S. Aboud, J. Schneider, J. Luy, T. Markussen, A. Blom:
"Performance comparison of capping layer materials for double spin-torque magnetic tunnel junctions";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 353 - 356.
F. Adamu-Lema, T. Dutta, D. Bensouiah, M. Duan, A. Asenov:
"How the Flat Field Transistor (FFT) can enable the continuation of DRAM scaling";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 221 - 224.
A. Afzalian, F. Ducry:
"Pushing the limits of ab-initio-NEGF transport using efficient dissipative Mode-Space algorithms for realistic simulations of low- dimensional semiconductors including their oxide interfaces";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 305 - 308.
C. Ahn, S. Jin, G. Kang, J. Jeon, H. Ahn, I. Jang, W. Choi, D. S. Kim:
"An effective grain growth model using a combination of Voronoi tessellation and Monte-Carlo methods";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 89 - 92.
P. Aleksandrov, A. Rezaei, N. Xeni, T. Dutta, A. Asenov, V. Georgiev:
"Fully Convolutional Generative Machine Learning Method for Accelerating Non-Equilibrium Green's Function Simulations";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 169 - 172.
S.M. Amoroso, G. Malavena, A. R. Brown, P. Asenov, X. Lin, V. Moroz, M. Giulianini, D. Refaldi, C. Compagnoni, A.S. Spinelli:
"Understanding the impact of polysilicon percolative conduction on 3D NAND variability";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 97 - 100.
M. Ansari, N. El-Atab:
"How to Control the State Transformation from Short-Term Potentiation to Long-Term Potentiation of Charge Trapping Synapse?";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 217 - 220.
M. Bahrami, D. Waldhoer, P. Khakbaz, T. Knobloch, A. Nazir, C. Liu, T. Grasser:
"Defects in Strontium Titanate: A First Principles Study";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 145 - 148.
M. Baldo, L. Laurin, E. Petroni, C. Pavesi, A. Motta, D. Ielmini, R. Annunziata, A. Redaelli:
"TCAD Modeling of Germanium Behavior During Forming Operation in Ge-Rich ePCM";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 321 - 324.
T. Bédécarrats, F. Triozon, S. Martinie, O. Rozeau:
"FDSOI MOSFET Subthreshold Slope Model Accuracy Improvement Introducing Low-Field Quantum Mechanical Correction";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 125 - 128.
D. Bosch, P. Lheritier, F. Guyader, S. Joblot, F. Ponthenier, J. Lacord:
"SOI pMOS Drain Leakage Understanding Based on TCAD and Measurements";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 65 - 68.
Y. J. Chan, S. Kola, Y. Li:
"DC/AC/RF Characteristics of Multi-Channel GAA NS FETs with ML and BL MoS₂";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 61 - 64.
P. Chang, Y. Guo, J. Li, Y. Xie:
"Bilayer-Barrier Ferroelectric-HfO2 Tunnel Junction with High ON Current and Giant ON/OFF ratio Arising from Resonant Tunneling";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 209 - 212.
L. Cvitkovich, B. Sklénard, D. Waldhoer, C. Wilhelmer, G. Veste, Y. Niquet, T. Grasser:
"Variability in Si/SiGe and Si/SiO2 Spin Qubits due to Interfacial Disorder";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 341 - 344.
M. R. Davoudi, P. Khakbaz, D. Waldhoer, T. Knobloch, Y. Zhang, T. Grasser:
"Multi-Scale Modeling Transistors Based on the 2D Semiconductor Bi₂O₂Se and its Native Oxide Bi₂SeO₅";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 49 - 52.
Y. Dei, Y. Yang, Y. Li:
"Compact Modeling of N- and P-Type GAA NS FETs Using Physical-Based Artificial Neural Networks with Temperature Dependence";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 285 - 288.
L. Deuschle, J. Backman, M. Luisier, J. Cao:
"Ab initio Self-consistent GW Calculations in Non-Equilibrium Devices: Auger Recombination and Electron-Electron Scattering";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 297 - 300.
E. Deylgat, E. Chen, B. Soree, W.G. Vandenberghe:
"Quantum Transport Study of Contact Resistance of Top- and Edge-Contacted Two-Dimensional Materials";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 45 - 48.
R. Duflou, M. Houssa, A. Afzalian:
"Ballistic heat transport in MoS₂ monolayers";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 177 - 180.
M. Eng, H. Y. Wong:
"Automatic TCAD Model Parameter Calibration using Autoencoder";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 277 - 280.
D. Esseni, F. Driussi, D. Lizzit, M. Massarotto, M. Segatto:
"Modelling and Simulations of Ferroelectric Materials and Ferroelectric-Based Nanoelectronic Devices";
Talk: SISPAD, Kobe, Japan (invited); 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 9 - 12.
M. Fan, X. Song, F. Liu, X. Liu:
"Monte-Carlo Based Simulation Method for Ferroelectric Memory Devices Including Polarization Switching and Trap Behaviors";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 153 - 156.
N. Feng, J. Ning, F. Zhang, Y. Li, P. Cai, H. Li, L. Zhang, R. Wang, R. Huang:
"A Compact Model of FTJ Covering the Trapping/De-trapping Characteristics";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 121 - 124.
J. Fernandez, G. Etesse, E. Comesaña, N. Seoane, X. Zhu, K. Hirakawa, A. Garcia-Loureiro, M. Bescond:
"Optimization of thermionic cooling semiconductor heterostructures with deep learning techniques";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 281 - 284.
L. Filipovic, J. Bobinac, J. Piso, T. Reiter:
"Physics-Informed Compact Model for SF₆/O₂ Plasma Etching";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 73 - 76.
V. Ganiu, D. Schulz:
"Application of a Hybrid Discontinuous Galerkin Scheme onto Quantum-Liouville-type Equations for Heterostructure Devices";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 261 - 264.
J. Grebot, R. Helleboid, G. Mugny, I. Nicholson, L. Fernandez Mouron, S. Lanteri, D. Rideau:
"Bayesian Optimization of Light Grating for High Performance Single-Photon Avalanche Diodes";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 365 - 368.
T. Hádámek, N. Jorstad, W Goes, Siegfried Selberherr, V. Sverdlov:
"Study of Self-Heating and its Effects in SOT-STT-MRAM";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 337 - 340.
F. Hashimoto, T. Suzuki, H. Minari, N. Nakazaki, J. Komachi, N. Sano:
"Self-Consistent Monte Carlo Device Simulation of Capture-Excitation Processes of Carriers";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 361 - 364.
S He, H. Li, G. Xu, X. Tang, Y. Li, J. Kim, T. Gu, X. Xue, Z. Li, H. Xu, H. Dong, K. Zhou, X. Hu, S. Long:
"Modeling the Thermal Characteristics of Stacked 2T0C Memory Array Based on InGaZnO4 Thin-film Transistors";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 17 - 20.
S He, H. Li, G. Xu, X. Tang, Y. Li, J. Kim, T. Gu, X. Xue, Z. Li, H. Xu, H. Dong, K. Zhou, X. Hu, S. Long:
"Modeling the Thermal Characteristics of Stacked 2T0C Memory Array Based on InGaZnO4 Thin-film Transistors";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 17 - 20.
R. Helleboid, J. Saint-Martin, M. Pala, P. Dollfus, G. Mugny, I. Nicholson, D. Rideau:
"Full-Band Monte Carlo Study of Hot Carriers for Advection-Diffusion Monte Carlo Simulations";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 369 - 372.
Y. Hirchaou, W Goes, C. Hylin, P. Blaise, J. Li, F. Triozon:
"Advanced TCAD Modeling of HfO2-based ReRAM: Coupling Redox Reactions and Thermal Effects";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 333 - 336.
L. Hung, Z. Stanojevic, C. Tsai, M. Karner, E. Chen:
"Source-to-drain Tunneling Analysis in p-type Si and Ge Based NWTs/NSTs";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 237 - 240.
T. Ishibashi, S. Souma:
"Quantum transport simulation of synaptic FETs based on two-dimensional semiconductors";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 245 - 248.
A. Jay, C. Mesnard, I. Nicholson, R. Helleboid, G. Mugny, D. Rideau, V. Goiffon, L. Martin-Samos, N. Richard, A. Hemeryck:
"Quantum Modeling of Semiconductors Leakage Currents Induced by Defects";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 141 - 144.
H. Jeong, B. Kim, Y. Kim, H. Choi, S. Yoo, S. Nam:
"Influence of Surface Halogenation on Silane Adsorption onto Silicon Surfaces for Poly-Si Epitaxy: A Density Functional Theory Study with Neural Network Potential";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 81 - 84.
M. Jeong, M.A. Pourghaderi, K. Vuttivorakulchai, S. Song, Y.-S. Kim, M. Vörös, S. Jin, B. Lee, W. Choi, U. Kwon, D. S. Kim:
"Theoretical Limit of TiSi₂ Contact Resistance";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 105 - 108.
N. Jorstad, W Goes, Siegfried Selberherr, V. Sverdlov:
"Spin Drift-Diffusion Boundary Conditions for FEM Modeling of Multilayer SOT Devices";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 357 - 360.
I. K. Kim, S.-C. Han, G. Park, G.-T. Jang, S.-M. Hong:
"Effect of Si Separator in Forksheet FETs on Device Characteristics Investigated by Using In-House TCAD Process Emulator and Device Simulator";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 225 - 228.
T. H. Kim, J. Lee, Y.-H. Kim:
"Electronic Transparency Limit of hBN Separation Layer for Quantum-Hybridization Negative Differential Resistance in Vertical Graphene/hBN/Graphene Heterojunctions";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 41 - 44.
Y. Kim, C. Ahn, A. Schmidt, J. Jeon, S.-J. Kim, H. Kim, H. Kim, H. Kwon, Y. Lee, S.-J. Kim, D. Lee, J. Lee, D. S. Kim:
"Change of electrical characteristics of a p-type MOSFET via hydrogen effect on boron redistribution";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 181 - 184.
N. Kumar, C. P. Garcia, A. Rezaei, H. Dixit, A. Asenov, V. Georgiev:
"Electrolyte-Gated FET-based Sensing of Immobilized Amphoteric Molecules Including the Variability in Affinity of the Reactive Sites";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 377 - 380.
J. Lacord, A. Boutayeb, D. Bosch, O. Adami, P. Lheritier, F. Guyader, S. Joblot, F. Ponthenier:
"Doped Channel SOI pMOS TCAD Description Including Floating Body Effects";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 69 - 72.
K. Lange, R. Waser, S. Menzel:
"On the Plausibility of Thermodiffusion as the Primary Mechanism for Unipolar Resistive Switching in Metal-Oxide-Metal Memristive Devices";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 329 - 332.
J. Lee, J. Kim, M. Pyun, W. Cho, K. Ko, H. Nah:
"3D Simulation Method to Predict Breakdown Voltage of Complex Large-Scale Ring Corner in SJ MOSFET";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 257 - 260.
J. Lee, S. Kim, H. Kim, S. Hong, S. Kim, D. S. Kim, M. Woo, J. Kang, H. Park, D. Ha:
"First-principles study of the conduction mechanism in tantala-based resistive memory devices";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 197 - 200.
S. Leroch, R. Stella, A. Hössinger, L. Filipovic:
"Molecular dynamics study of Al implantation in 4H-SiC";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 185 - 188.
Q. Li, Y. Chen, Y. Xing:
"A Boltzmann Transport Equation Model for Substrate Damage During Focused Helium Ion Beam Fabrication of Nanostructures";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 77 - 80.
Y. Lim, M. Shin:
"A Novel Machine-Learning Based Mode Space Method for Efficient Device Simulations";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 165 - 168.
T. Linn, J. Flasskamp, C. Jungemann:
"Stabilization of the Time-Dependent Drift-Diffusion Model for Fermi-Dirac Statistics";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 265 - 268.
X. Liu, M. Fan, J. Xu, F. Liu:
"Multi-physics simulations for nanoscale CMOS reliability";
Talk: SISPAD, Kobe, Japan (invited); 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 13 - 16.
M. Lu, C. Hung, M. Fan, Y. Huang, C. Li, M. Yuan, C. Chang, T. Chiang, K. Su, C. Lin:
"Random Telegraph Noise Simulation and the Impact on Noise Sensitive Design";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 113 - 116.
T. Lu, A. Lu, H. Y. Wong:
"Device Image-IV Mapping using Variational Autoencoder for Inverse Design and Forward Prediction";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 161 - 164.
B. Magyari-Koepe, H. Hsu, J. Wu:
"Quantum Mechanical Modeling Techniques for High- Performance Low-k Amorphous Material Engineering: a Showcase for aBN";
Talk: SISPAD, Kobe, Japan (invited); 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 137 - 140.
S. Mansoori, S. Gopalan, M.V. Fischetti:
"Mobility Limitations in TMD Monolayers: The Influence of Impurities and Remote Phonons";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 33 - 36.
S. Martinie, A Vaysset, Y. Mourrier, P. Scheer, O. Rozeau:
"Body Resistance Model For Partially Depleted SOI Device: Charge-Based Approach, Extraction and Verilog-A Implementation.";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 129 - 132.
C. Medina-Bailon, G. Rodriguez, J.L. Padilla, L. Donetti, C. Navarro, C. Sampedro, F. Gamiz:
"Description of Gate-to-Channel Tunneling Leakage Mechanism in a 2D Monte Carlo Simulator";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 309 - 312.
R. Miquel, T. Cabout, O. Cueto, B. Sklénard, M. Plapp:
"A Fully Coupled Multi-Physics Model to Simulate Phase Change Memory Operations in Ge-rich Ge2Sb2Te5 Alloys";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 317 - 320.
H. Miyagi, U.G. Vej-Hansen, B. Wells, J. Luy, C. Zechner:
"First-Principles Study of Charged Point Defects in 4H-SiC: Accurate Formation Energies, Trap Levels, and Beyond";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 189 - 192.
S. Ogisawa, S. Souma:
"Tight-binding simulation of graphene nanoantenna based on Boltzmann equation and finite difference time-domain method";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 37 - 40.
A. Padovani, P. Torraca, L. Larcher, J. Strand, A. Shluger:
"Modeling Degradation and Breakdown in SiO₂ and High-k Gate Dielectrics";
Talk: SISPAD, Kobe, Japan (invited); 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 93 - 96.
C. Park, J. Jeon, H. Cho:
"DAT: Leveraging Device-Specific Noise for Efficient and Robust AI Training in ReRAM-based Systems";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 289 - 292.
C. Park, H. Nam, J. Park, J. Jeon:
"FlowSim: An Invertible Generative Network for Efficient Statistical Analysis under Process Variations";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 157 - 160.
J. Park, L. Paulatto, M. Pala, J. Saint-Martin:
"Full Band Monte Carlo Simulation of Thermal Transport Across Lateral Interface Between 2D Materials";
Talk: SISPAD, Kobe, Japan (invited); 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 21 - 24.
M. Pech, D. Schulz:
"Transient Effects of Band Non-Parabolicity in DGFETs for RF Applications";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 253 - 256.
A. Pilotto, A M�Foukh, P. Dollfus, J. Saint-Martin, M.G. Pala:
"Full-Band Quantum Simulations of Semiconductor Devices based on Empirical Pseudopotential Hamiltonians in the presence of Phonon Scattering and Non-Radiative Recombination";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 301 - 304.
R.J. Prentki, F. Fehse, P. Philippopoulos, C. Zhou, H. Guo, M. Korkusinski, F. Beaudoin:
"Robust Sub-Kelvin Simulations of Quantum Dot Charge Sensing";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 349 - 352.
T. Reiter, A. Toifl, A. Hössinger, L. Filipovic:
"Modeling Oxide Regrowth During Selective Etching in Vertical 3D NAND Structures";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 85 - 88.
M. Renner, T. Linn, C. Jungemann:
"An Accurate k*p Approximation of the Empirical Pseudopotential Hamiltonian for Confined States in Silicon Double Gate MOSFETs";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 269 - 272.
A. Rezaei, N. Xeni, N. Kumar, T. Dutta, A. Dixit, I. Topaloglu, P. Aleksandrov, V. Georgiev, A. Asenov:
"Mobility and intrinsic performance of silicon-based Nanosheet FETs at 3nm CMOS and beyond";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 233 - 236.
D. Rideau, O. Jeannin, A. Arnaud, J. Grebot, I. Nicholson, R. Helleboid, G. Mugny:
"Band structure and optical absorption of strained Si1−x−y GexCy alloys: a Tight-Binding approach";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 373 - 376.
T. Samadder, S. Mahapatra:
"Tunneling Leakage Current Dependent RDD Model Framework for Gate Oxide TDDB";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 193 - 196.
V. Saraswat, A. De, J. Sakhuja, U. Ganguly:
"Serialized Stepwise Parameter Calibration Strategy for a Compact Transient Switching Model of PCMO RRAM";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 201 - 204.
C. Su, N. Feng, K. Wang, L. Zhang, R. Huang, Q. Huang:
"A Physical MFIS-FeFET Model with Awareness of Drain-Induced Spatially-Distributed Polarization and Ferroelectric Parametric Fluctuation";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 205 - 208.
S. Su, E. Chen, A. Sanchez-Soares, T. Kelly, G. Fagas, J.C. Greer, G. Pitner, W. Wong, I.P. Radu:
"Effect of Metal Coupling on Schottky Barrier Height Extraction";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 109 - 112.
M. Thesberg, F. Schanovsky, Z. Stanojevic, O. Baumgartner, M. Karner:
"Compact Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Approaches Versus TCAD For The Modeling Of Ferroelectric Transistors (FeFETs): Percolation, Steep-Subthreshold and Depolarization";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 117 - 120.
T. Tsukagoshi, H. Tokuhira, T. Nakai, Y. Matsuzawa, R. Masuda, H. Furuhashi, S. Fujii, H. Ode, N. Kusunoki:
"TCAD Modeling of Carbon Electrode for Highly Accurate Reset Current Prediction of Phase Change Memory Considering Both Thermal and Electronic Transport";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 325 - 328.
U. Uttarwar, K. Kaushik, J. Sakhuja, V. Saraswat, S. Lashkare, U. Ganguly:
"Limitations on Pitch Design due to Thermal Crosstalk in Pr_1-xCa_xMnO₃ RRAM Crossbar Arrays";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 25 - 28.
G. Veste, A. Rodriguez-Mena, B. Martinez, B. Sklénard, J. Li, Y. Niquet:
"Improving the tight-binding description of spin-orbit interaction in a Si/Ge heterostructure for qubits applications";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 345 - 348.
J. Victory, J. R. Guitart, R. Krishna, K. Jia, D. Zurek, P. Betak, C. He, J. Lehocky:
"Simulation Challenges of SiC MOSFET Switching Performance and Reliability";
Talk: SISPAD, Kobe, Japan (invited); 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 5 - 8.
P. B. Vyas, A. Pal, G. Costrini, P. Asenov, S. Mhedhbi, C. Zhao, V. Moroz, B. Colombeau, B. Haran, E.M. Bazizi, B. Ayyagari-Sangamalli:
"Materials to System Co-optimization (MSCO^TM) for SRAM and its application towards Gate-All-Around Technology";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 53 - 56.
P. B. Vyas, C. Zhao, S. Dag, A. Pal, E.M. Bazizi, B. Ayyagari-Sangamalli:
"Next Generation Gate-all-around Device Design for Continued Scaling Beyond 2nm Logic Node";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 57 - 60.
A. Wattal, A. Levy, Z. Khan:
"Statistical Modeling of Metal-Oxide RRAM SET/RESET Behavior Using Deep Neural Networks";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 173 - 176.
C. Wilhelmer, D. Waldhoer, D. Milardovich, L. Cvitkovich, M. Waltl, T. Grasser:
"Intrinsic Electron Trapping in Amorphous Silicon Nitride (a-Si3N4:H)";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 149 - 152.
H. Y. Wong, H. Takeuchi, R. Mears:
"Cryogenic Electron Mobility and Subthreshold Slope of Oxygen-Inserted (OI) Si Channel nMOSFETs";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 229 - 232.
H. Xu, G. Zhan, S. Wu, J. Wu, K. Luo, Y. Liu, C. He, Z. Wu:
"Machine Learning-augmented High-efficient TCAD on Accurate Characteristics of Gate-all-around Transistors with Quantum Effect";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 273 - 276.
W. Yang, C. Yu, F. Liu, J. Kang:
"Lateral Superlattice - A Possible Origin of the Large Leakage Current in Al_1-xSc_xN";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 213 - 216.
K. Yeom, G. Yoo, A. Payet, A. Schmidt, H. Ahn, I. Jang, Y. Nishizawa, M. Uchiyama, Y. Kayama, S. Yamada, D. S. Kim:
"Full Chip Stress Model for Flash BEOL Crack Failure Risk Analysis";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 29 - 32.
M. Yin, X. Qiao, K. Suzuki, H. Miura, L. Wang:
"Control of the Adsorption Behavior of Gas Molecule on Graphene by Strain: First-Principles Calculations for Development of Multi-Gas Selective Sensors";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 241 - 244.
K. Yokota, N. Funaki, M. Ohmoto, M. Uemoto, T. Ono:
"Density functional theory calculation for carrier scattering at 4H-SiC(0001)/SiO2 interface";
Talk: SISPAD, Kobe, Japan (invited); 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 293 - 296.
G. Yu, Z. Zhou, R. Chen, J. Li, Y. Xiao, P. Huang, J. Kang, X. Liu:
"A Compact Model of FDSOI based 1-T Pixel Sensor for Design of In-sensor Computing";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 133 - 136.
G. Zhan, K. Luo, R. Jia, C. Yang, Z. Wu:
"Quantum transport of 2D Weyl VSi₂N₄-based magnetic tunnel junction: a k*p-NEGF study";
Poster: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 249 - 252.
S. Zhao, P. Zhao, Y. He, G. Du:
"Self-Heating Influence on Hot Carrier Degradation Reliability of GAA FET by 3D KMC Method";
Talk: SISPAD, Kobe, Japan; 2023-09-27 - 2023-09-29; in: "Proc. of SISPAD", (2023), 978-4-86348-803-8; 101 - 104.