SISPAD 2022 Proceedings
- F. Gamiz (ed.):
"Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)";
Universidad de Granada, Granada, Spain, 2022, 219 pages.
Talks and Poster Presentations (with Proceedings-Entry)
- J. Aeschlimann, M.H. Bani-Hashemian, F. Ducry, A. Emboras, M. Luisier:
"Insights into few-atom conductive bridging random access memory cells with a combined force-field/ab initio scheme";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108493-1 - 108493-4. - A. Afzalian, Z. Ahmed, J. Ryckaert:
"Forked-contact and dynamically-doped nanosheets to enhance Si and 2D-material devices at the limit of scaling";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108524-1 - 108524-4. - L. F. Aguinsky, F. Rodrigues, T. Reiter, X. Klemenschits, L. Filipovic, A. Hössinger, J. Weinbub:
"Modeling incomplete conformality during atomic layer deposition in high aspect ratio structures";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 201 (2023), ISSN: 0038-1101; 108584-1 - 108584-6. - B. Ahn, K. Lee, J. Yang, J. Doh, J. Jeong, T. Kwag, M. Kim, Y. Kim, J. Kim, H. Keun Yoo, D. Sin Kim:
"Improvement of on-cell metrology using spectral imaging with TCAD modeling";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 201 (2023), ISSN: 0038-1101; 108578-1 - 108578-5. - E. Akhoundi, M. Houssa, A. Afzalian:
"The impact of electron phonon scattering on transport properties of topological insulators: A first principles quantum transport study";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 201 (2023), ISSN: 0038-1101; 108587-1 - 108587-5. - E. Amat, A. del Moral, J. Bausells, F. Perez-Murano:
"Stacking devices in a vertical nanowire, a feasible option to implement smaller ICs";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 193 - 194. - M.G. Ancona, S. Cooke:
"Non-local transport effects in semiconductors under low-field conditions";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108553-1 - 108553-3. - M. Annamalai, M. Schröter:
"A compact physical expression for the static drain current in heterojunction barrier CNTFETs";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2022), ISSN: 0038-1101; 108523-1 - 108523-5. - A. Ansari, N. Choudhury, N. Parihar, S. Mahapatra:
"Comparative analysis of NBTI modeling frameworks BAT and Comphy";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108549-1 - 108549-5. - J. Backman, Y. Lee, M. Luisier:
"Electron-phonon calculations using a Wannier-based supercell approach: Applications to the monolayer MoS2 mobility";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 198 (2022), ISSN: 0038-1101; 108461-1 - 108461-4. - J. Cao, S. Fiore, C. Klinkert, M. Luisier:
"Bulk photovoltaic effect in partial overlap MoSe2-WSe2 van der Waals heterostructures: An ab initio quantum transport study";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108452-1 - 108452-4. - H. Ceric, R. Orio, Siegfried Selberherr:
"Microstructural impact on electromigration reliability of gold interconnects";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108528-1 - 108528-3. - S. Cha, S.-M. Hong:
"Approximate H-transformation for numerical stabilization of a deterministic Boltzmann transport equation solver based on a spherical harmonics expansion";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 198 (2022), ISSN: 0038-1101; 108457-1 - 108457-4. - Y. Cha, J. Park, C. Park, S. Chong, C.-H. Kim, C.-S. Lee, I. Jeong, H. Cho:
"A novel methodology for neural compact modeling based on knowledge transfer";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 198 (2022), ISSN: 0038-1101; 108450-1 - 108450-5. - S.-W. Chang, J.-H. Chou, W.-H. Lee, Y.-J. Lee, D. D. Lu:
"TCAD-Based RF performance prediction and process optimization of 3D monolithically stacked complementary FET";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 201 (2023), ISSN: 0038-1101; 108585-1 - 108585-5. - S. Chatterjee, S. Kumar, A. Gaidhane, C. Dabhi, Y. Chauhan, H. Amrouch:
"Ferroelectric FDSOI FET modeling for memory and logic applications";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108554-1 - 108554-4. - S. Cho, B. Choi:
"String-level Compact Modeling Based on Channel Electrostatic Potential for Dynamic Operation of 3D Charge Trapping Flash Memories";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 101 - 102. - H. Choi, K. Lee, J. Doh, J. Jeong, T. Kwag, M. Kim, Y. Kim, J. Kim, H. Yoo, D. S. Kim:
"Sensitivity enhancement in OCD metrology by optimizing azimuth angle based on the RCWA simulation";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108574-1 - 108574-4. - Y. Chu, S. Lu, M. Povolotskyi, G. Klimeck, U. Ravaioli, T. Palacios, M. Mohamed:
"Assessment of Lateral and Vertical Tunneling FETs Based on 2D Material for Ultra-Low Power Logic Applications";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 23 - 24. - S. Cooke, M.G. Ancona:
"Development of an ensemble Monte Carlo simulator for high-power semiconductor devices with self-consistent electromagnetism and GPU implementation";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108487-1 - 108487-4. - O. Cueto, A. Trabelsi, C. Cagli, M. C. Cyrille:
"Coupling a phase field model with an electro-thermal solver to simulate PCM intermediate resistance states for neuromorphic computing";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108542-1 - 108542-4. - R Defrance, B. Sklénard, M Guillaumont, J. Li, M. Freyss:
"Ab initio study of electron mobility in V2O5 via polaron hopping";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 198 (2022), ISSN: 0038-1101; 108455-1 - 108455-4. - E. Deylgat, E. Chen, M.V. Fischetti, B. Soree, W.G. Vandenberghe:
"Image-force barrier lowering in top- and side-contacted two-dimensional materials";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 198 (2022), ISSN: 0038-1101; 108458-1 - 108458-4. - R. Dhar, N. Kumar, C. P. Garcia, V. P. Georgiev:
"Deriving a novel methodology for nano-BioFETs and analysing the effect of high-k oxides on the amino-acids sensing application";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108525-1 - 108525-4. - Q. Ding, A. V. Kuhlmann, A. Fuhrer, A. Schenk:
"A generalizable TCAD framework for silicon FinFET spin qubit devices with electrical control";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108550-1 - 108550-4. - S. Donati Guerrieri, E. Catoggio, F. Bonani:
"TCAD simulation of microwave circuits: The Doherty amplifier";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108445-1 - 108445-5. - L. Donetti, C. Marquez, C. Navarro, C. Medina-Bailon, J.L. Padilla, C. Sampedro, F. Gamiz:
"Towards a DFT-based layered model for TCAD simulations of MoS2";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108437-1 - 108437-4. - M. Fan, F. Liu, X. Liu:
"Polarization switching characteristics in AFE/FE Double-Layer devices";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108454-1 - 108454-5. - J. Fernandez, N. Seoane, E. Comesaña, A. Garcia-Loureiro:
"A comprehensive Pelgrom-based on-current variability model for FinFET, NWFET and NSFET";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108492-1 - 108492-4. - L. Filipovic, O. Baumgartner, X. Klemenschits, J. Piso, J. Bobinac, T. Reiter, G. Strof, G. Rzepa, Z. Stanojevic, M. Karner:
"DTCO flow for air spacer generation and its impact on power and performance at N7";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108527-1 - 108527-5. - S. Fiorentini, J. Ender, Siegfried Selberherr, R. Orio, W Goes, V. Sverdlov:
"Comprehensive evaluation of torques in ultra-scaled MRAM devices";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108491-1 - 108491-4. - A.D. Gaidhane, Z. Yang, Y. Cao:
"Graph-based Compact Modeling (GCM) of CMOS transistors for efficient parameter extraction: A machine learning approach";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 201 (2023), ISSN: 0038-1101; 108580-1 - 108580-4. - G. Gandus, Y. Lee, L. Deuschle, D. Passerone, M. Luisier:
"Efficient and accurate defect level modeling in monolayer MoS2 via GW+DFT with open boundary conditions";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108499-1 - 108499-4. - V. Ganiu, D. Schulz:
"Discontinuous Galerkin concept for Quantum-Liouville type equations";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108536-1 - 108536-3. - P. Gholve, P. Chatterjee, C. Pasupuleti, H. Amrouch, N. Gangwar, S. Das, U. Sharma, V. M. van Santen, S. Mahapatra:
"CARAT - A reliability analysis framework for BTI-HCD aging in circuits";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 201 (2023), ISSN: 0038-1101; 108586-1 - 108586-7. - F. Gity:
"Mono-material TMD-based heterostructures for nanoelectronics applications";
Talk: SISPAD, Granada, Spain (invited); 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 68 - 69. - J. Gonzalez-Medina, Z. Stanojevic, Z. Hou, Q. Zhang, W. Li, M. Karner:
"On the feasibility of DoS-engineering for achieving sub-60 mV subthreshold slope in MOSFETs";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108494-1 - 108494-4. - S. Gopalan, M.L. Van de Put, G. Gaddemane, M.V. Fischetti:
"Theoretical study of carrier transport in supported and gated two-dimensional transition metal dichalcogenides";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108509-1 - 108509-4. - T. Hádámek, Siegfried Selberherr, W Goes, V. Sverdlov:
"Modeling thermal effects in STT-MRAM";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108522-1 - 108522-4. - T. Herrmann, A. Zaka, Z. Zhao, B. Syamal, W. Arfaoui, R. Jain, M.-C. Chang, S. Jain, S. N. Ong:
"Enabling medium thick gate oxide devices in 22FDX® technology for switch and high-performance amplifier application";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108512-1 - 108512-7. - H. Jacquinot, R. Maurand, G. T. Fernández-Bada, T. Bertrand, M. Casse, Y.M. Niquet, S. De Franceschi, T. Meunier, M. Vinet:
"RF simulation platform of qubit control using FDSOI technology for quantum computing";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108488-1 - 108488-4. - R. K. Jaisawal, S. Rathore, P. N. Kondekar, N. Bagga:
"Reliability of TCAD study for HfO2-doped Negative capacitance FinFET with different Material-Specific dopants";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108531-1 - 108531-5. - G.-T. Jang, S.-M. Hong:
"Hybrid 2D/3D mesh for efficient device simulation of locally deformed cylindrical semiconductor devices";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108552-1 - 108552-4. - P.L. Julliard, A. Johnsson, N. Zographos, R. Demoulin, R. Monflier, A. Jay, O. Er-Riyahi, F. Monsieur, S. Joblot, F. Deprat, D. Rideau, P. Pichler, A. Hemeryck, F. Cristiano:
"Prediction of the evolution of defects induced by the heated implantation process: Contribution of kinetic Monte Carlo in a multi-scale modeling framework";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108521-1 - 108521-4. - C. Jungemann, F. Meng, M. D. Thomson, H. G. Roskos:
"Massively parallel FDTD full-band Monte Carlo simulations of electromagnetic THz pulses in p-doped silicon at cryogenic temperatures";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108439-1 - 108439-4. - M. Kaniselvan, M. Luisier, M. Mladenovic:
"An atomistic modeling framework for valence change memory cells";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108506-1 - 108506-4. - Q. Kim, S. Lee, A. Ma, J. Kim, H.-K. Noh, K. B. Chang, W. Cheon, S. Yi, J. Jeong, B.S. Kim, Y.-S. Kim, D. S. Kim:
"A simulation physics-guided neural network for predicting semiconductor structure with few experimental data";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 201 (2023), ISSN: 0038-1101; 108568-1 - 108568-4. - G. Klimeck, T. Faltens, D. Mejia, A. Strachan, L. Zentner, M. Zentner:
"Semiconductor workforce development through immersive simulations on nanoHUB.org";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 103 - 104. - S. Kumar, T. Samadder, D. Kochar, S. Mahapatra:
"A Stochastic Simulation Framework for TDDB in MOS Gate Insulator Stacks";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 160 - 161. - H. Kwon, H. Seo, H. Huh, F. Iza, D. Oh, S. K. Park, S. Cha:
"TCAD Augmented Generative Adversarial Network for Optimizing a Chip-level Size Mask Layout Design in the HARC Etching Process";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 65 - 67. - P. Lapham, V. P. Georgiev:
"Theoretically probing the relationship between barrier length and resistance in Al/AlOx/Al tunnel junctions";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108442-1 - 108442-4. - M. Lederer, R. Olivo, N. Yadav, S. De, K. Seidel, L. Eng, T. Kämpfe:
"SPICE compatible semi-empirical compact model for ferroelectric hysteresis";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108501-1 - 108501-4. - H. Lee, M. Shin:
"A novel ferroelectric nanopillar multi-level cell memory";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108535-1 - 108535-4. - K. Lee, S.-M. Hong:
"Acceleration of semiconductor device simulation using compact charge model";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108526-1 - 108526-4. - S.-H. Lee, V. Olevano, B. Sklénard:
"A generalizable, uncertainty-aware neural network potential for GeSbTe with Monte Carlo dropout";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108508-1 - 108508-4. - W. Lee, S. Ko, J. H. Kim, Y.-S. Kim, U. Kwon, H.C. Kim, D. S. Kim:
"Simulation-based study on characteristics of dual vertical transfer gates in sub-micron pixels for CMOS image sensors";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 198 (2022), ISSN: 0038-1101; 108472-1 - 108472-3. - C. Lenz, P. Manstetten, L. F. Aguinsky, F. Rodrigues, A. Hössinger, J. Weinbub:
"Automatic grid refinement for thin material layer etching in process TCAD simulations";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108534-1 - 108534-6. - Y. Li, X. Huang, C. Liao, R. Wang, S. Zhang, L. Zhang, R. Huang:
"A dynamic current hysteresis model for IGZO-TFT";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108459-1 - 108459-5. - A. Lu, J. Marshall, Y. Wang, M. Xiao, Y. Zhang, H. Y. Wong:
"Vertical GaN diode BV maximization through rapid TCAD simulation and ML-enabled surrogate model";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 198 (2022), ISSN: 0038-1101; 108468-1 - 108468-4. - F. Machida, H. Koshimoto, Y. Kayama, A. Schmidt, I. Jang, S. Yamada, D. S. Kim:
"GPGPU MCII for high-energy implantation";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108520-1 - 108520-4. - B. Mallick, D. Saha, A. Datta, S. Ganguly:
"Modeling optical second harmonic generation for oxide/semiconductor interface characterization";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108502-1 - 108502-5. - D. Mamaluy, J. P. Mendez:
"Strong quantization of current-carrying electron states in δ-layer systems";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108532-1 - 108532-3. - S. Martinie, O. Rozeau, H. Park, S. Park, P. Scheer, S. El Ghouli, A. Juge, H. Lee, T. Poiroux:
"Non-Quasi-Static modeling and methodology in fully depleted SOI MOSFET for L-UTSOI model";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108511-1 - 108511-7. - M. Matic, M. Poljak:
"Ab initio quantum transport simulations of monolayer GeS nanoribbons";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108460-1 - 108460-4. - S. Matsuo, S. Souma:
"A proposal of quantum computing algorithm to solve Poisson equation for nanoscale devices under Neumann boundary condition";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108547-1 - 108547-4. - J. P. Mendez, D. Mamaluy:
"Disorders in δ-layer tunnel junctions";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 121 - 122. - D. Milardovich, D. Waldhoer, M. Jech, A.-M. El-Sayed, T. Grasser:
"Building robust machine learning force fields by composite Gaussian approximation potentials";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108529-1 - 108529-4. - D. Nagy, A. Rezaei, N. Xeni, T. Dutta, F. Adamu-Lema, I. Topaloglu, V. P. Georgiev, A. Asenov:
"Hierarchical simulation of nanosheet field effect transistor: NESS flow";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108489-1 - 108489-4. - M. S. Nazir, A. Pampori, R. Dangi, P. Kushwaha, E. Yadav, S. Sinha, Y. Chauhan:
"Characterization and modeling of drain lag using a modified RC network in the ASM-HEMT framework";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108490-1 - 108490-5. - T. Nishimura, K. Eikyu, K. Sonoda, T. Ogata:
"Analysis of uniaxial stress impact on drift velocity of 4H-SiC by full-band Monte Carlo simulation";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108503-1 - 108503-5. - M. O´Donovan, P. Farrell, T. Streckenbach, T. Koprucki, S. Schulz:
"Impact of random alloy fluctuations on carrier transport in (In,Ga)N quantum well systems: Linking atomistic tight-binding models to drift-diffusion";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", (2022), 91 - 92. - C. Park, P. Vincent, S. Chong, J. Park, Y. Cha, H. Cho:
"Hierarchical Mixture-of-Experts approach for neural compact modeling of MOSFETs";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108500-1 - 108500-5. - R. Patel, N. R. Mohapatra, R. S. Hegde:
"Surrogate models for device design using sample-efficient Deep Learning";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108505-1 - 108505-5. - M. Pech, D. Schulz:
"THz gain compression in nanoscale FinFETs";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108485-1 - 108485-3. - A. Pilotto, P. Dollfus, J. Saint-Martin, M. Pala:
"Full quantum simulation of Shockley-Read-Hall recombination in p-i-n and tunnel diodes";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 198 (2022), ISSN: 0038-1101; 108469-1 - 108469-4. - A. Pon, M. Ehteshamuddin, K. Sheelvardhan, A. Dasgupta:
"Analysis of 1/f and G-R noise in Phosphorene FETs";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108530-1 - 108530-4. - R.J. Prentki, M. Harb, C. Zhou, P. Philippopoulos, F. Beaudoin, V. Michaud-Rioux, H. Guo:
"Tunneling leakage in ultrashort-channel MOSFETs - From atomistics to continuum modeling";
Talk: SISPAD, Granada, Spain (invited); 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108438-1 - 108438-4. - S. Rathore, R. Kumar Jaisawal, P. N. Kondekar, N. Bagga:
"Trap and self-heating effect based reliability analysis to reveal early aging effect in nanosheet FET";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108546-1 - 108546-7. - F. Rodrigues, L. F. Aguinsky, A. Hössinger, J. Weinbub:
"3D Feature-Scale Modeling of Highly Selective Fluorocarbon Plasma Etching";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 32 - 33. - C. Rossi, A. Burenkov, P. Pichler, E. Bär, J. Müller, G. Larrieu:
"Performance of vertical gate-all-around nanowire p-MOS transistors determined by boron depletion during oxidation";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108551-1 - 108551-5. - B. Rrustemi, F. Triozon, M. Jaud, W. Vandendaele, G. Ghibaudo:
"Calculation of the mobility in Al2O3/GaN electron channel: Effect of p-doping and comparison with experiments";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 198 (2022), ISSN: 0038-1101; 108470-1 - 108470-5. - H. Ryu:
"On the noise-sensitivity of entangling quantum logic operations implemented with a semiconductor quantum dot platform";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108453-1 - 108453-4. - R. Saikia, S. Mahapatra:
"A physical model for long term data retention characteristics in 3D NAND flash memory";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108497-1 - 108497-4. - A. Sanchez-Soares, C. Gilardi, Q. Lin, T. Kelly, S.-K. Su, G. Fagas, J.C. Greer, G. Pitner, E. Chen:
"Switching limits of top-gated carbon nanotube field-effect transistors";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 202 (2023), ISSN: 0038-1101; 108624-1 - 108624-4. - Siegfried Selberherr, V. Sverdlov:
"About electron transport and spin control in semiconductor devices";
Talk: SISPAD, Granada, Spain (invited); 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108443-1 - 108443-4. - Y. Shiiki, S. Nagata, T. Takahashi, T. Yanagida, H. Ishikuro:
"Compact model of a metal oxide molecule sensor for self-heating control";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 204 (2023), ISSN: 0038-1101; 108641-1 - 108641-4. - M. Shin, S. Jeon, K. Joo:
"Efficient atomistic simulations of lateral heterostructure devices with metal contacts";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 198 (2022), ISSN: 0038-1101; 108456-1 - 108456-4. - L. Silvestri, M. Palsgaard, R. Rhyner, M. Frey, J. Wellendorff, S. Smidstrup, R. Gull, K. El Sayed:
"Hierarchical modeling for TCAD simulation of short-channel 2D material-based FETs";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108533-1 - 108533-5. - K. Sonoda, N. Shiraishi, K. Maekawa, N. Ito, E. Hasegawa, T. Ogata:
"Modeling electrical resistivity of CrSi thin films";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 198 (2022), ISSN: 0038-1101; 108471-1 - 108471-4. - C. Su, W. Xu, L. Zhang, R. Huang, Q. Huang:
"New insights into the effect of spatially distributed polarization in ferroelectric FET on content addressable memory operation for machine learning applications";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108495-1 - 108495-5. - T. Suwa:
"Investigation of effects of lateral boundary conditions on current filament movements in Trench-Gate IGBTs";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108537-1 - 108537-4. - M. Thesberg, Z. Stanojevic, O. Baumgartner, C. Kernstock, M. Barci, X. Wang, X. Zhou, H. Jiao, G. Donadio, D. Garbin, T. Witters, S. Kundu, H. Hody, R. Delhougne, G. Kar, M. Karner:
"Monolithic TCAD simulation of phase-change memory (PCM/PRAM) + Ovonic Threshold Switch (OTS) selector device";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108504-1 - 108504-5. - R. Tiwari, M. Duan, M. Bajaj, D. Dolgos, L. Smith, H. Y. Wong, S. Mahapatra:
"A physics-based TCAD framework for NBTI";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 202 (2023), ISSN: 0038-1101; 108573-1 - 108573-5. - A. Toral-Lopez, E. G. Marin, F. Pasadas, D. Pardo, J. Cuesta, F.G Ruiz, A. Godoy:
"1D Drift-Diffusion transport in 2D-material based FETs with vertical contacts";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 105 - 106. - L. Treps, J. Li, B. Sklénard:
"Impact of hydrogen coverage on silane adsorption during Si epitaxy from ab initio simulations";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 197 (2022), ISSN: 0038-1101; 108441-1 - 108441-3. - M. Veresko, M.-C. Cheng:
"Quantum element method for multi-dimensional nanostructures enabled by a projection-based learning algorithm";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 202 (2023), ISSN: 0038-1101; 108610-1 - 108610-4. - D. Verreck, A. Arreghini, G. Van den Bosch, M. Rosmeulen:
"An inner gate as enabler for vertical pitch scaling in macaroni channel gate-all-around 3-D NAND flash memory";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 199 (2023), ISSN: 0038-1101; 108498-1 - 108498-3. - B. Vianne, B. Guillo-Lohan, V. Quenette, B. Legoix, B. Vincent:
"28 nm FD-SOI MEOL parasitic capacitance segmentation using electrical testing and semiconductor process modeling";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108572-1 - 108572-4. - P. Vudumula, T. Cosnier, O. Syshchyk, B. Bakeroot, S. Decoutere:
"TCAD-based design and verification of the components of a 200 V GaN-IC platform";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108496-1 - 108496-5. - K. Vuttivorakulchai, M.A. Pourghaderi, G.-J. Kim, S. Song, Y.-S. Kim, U. Kwon, D. S. Kim:
"Surface scattering impact on Si/TiSi2 contact resistance";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 201 (2023), ISSN: 0038-1101; 108583-1 - 108583-7. - P. B. Vyas, A. Pal, S. Weeks, J. Holt, A. K. Srivastava, L. Megalini, S. Krishnan, M. Chudzik, E.M. Bazizi, B. Ayyagari-Sangamalli:
"Modeling of SiC transistor with counter-doped channel";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 200 (2023), ISSN: 0038-1101; 108548-1 - 108548-4. - H. Y. Wong, P. Dhillon, K. M. Beck, Y. J. Rosen:
"A simulation methodology for superconducting qubit readout fidelity";
Talk: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "LETTERS from the International Conference on Simulation of Semiconductor Processes and Devices 2022", Solid-State Electronics, 201 (2023), ISSN: 0038-1101; 108582-1 - 108582-4. - H. Xu, W. Gan, L. Cao, H. Yin, Z. Wu:
"A Machine-learning-based Multi-Objective Optimization of Stacked Nanosheet Transistors for sub-3nm technology node";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 109 - 110. - K. Yamaguchi, S. Souma:
"Scattering matrix-based low computational cost model for the device and circuit co-simulation of phosphorene tunnel field-effect transistors";
Poster: SISPAD, Granada, Spain; 2022-09-06 - 2022-09-08; in: "Conference Abstract Book - International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2022)", (2022), 140 - 141.