SISPAD 2021 Proceedings

• S. Ahmedy, J. Zheng, Y. Tan, J. Campbell, A.W. Ghosh:
  "A Comprehensive Modeling Approach of Electronic Properties in III-V Digital Alloys";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 3.
  
  
• S.M. Amoroso, V. Moroz, X. Lin, E. Kao:
  "Simulation-based DRAM Design Technology Co-Optimization: Why Random Dopant Fluctuations Matter";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• F. Arefaine, M. Duan, R. Tiwari, A. Kapoor, L. Smith, S. Mahapatra, H. Y. Wong:
  "Using Long Short-Term Memory (LSTM) Network to Predict Negative-Bias Temperature Instability";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• M. Brahma, M.L. Van de Put, E. Chen, M.V. Fischetti, W.G. Vandenberghe:
  "Modeling Contact Resistivity in Monolayer Molybdenum disulfide Edge contacts";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 5.
  
  
• E. Catoggio, S.D. Guerrieri, F. Bonani, G. Ghione:
  "Efficient TCAD Large-Signal temperature-dependent variability analysis of a FinFET power amplifier";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• S. Cea, S. Berrada, K. Ghosh, S. Hasan, P. Keys, R. Mehandru, B. Obradovic, V. Tiwari, C. Weber, M. Stettler:
  "TCAD for logic technology process development";
  SISPAD, Dallas, Texas and Virtual (invited); 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• C.-Y. Chen, Y. Li:
  "Electrical Transport and Thermoelectric Properties of Cr-doped Monolayer MoS₂ and WS₂ via Density Functional Theory and Boltzmann Transport Simulation";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• E. Chen, A. Sanchez-Soares, T. Kelly, G. Fagas, J.C. Greer:
  "A Sub-k B T/q Dirac-source Graphene Nanoribbon Field-effect Transistor";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• W. Chen, Y. Tsou, H. Shih, P. Liu, C. Liu:
  "Critical Current Reduction of Field-Free Perpendicular SOT-MTJ by STT Assist Using Micromagnetic Simulation";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• M.-C. Cheng, W. Jiang:
  "Multi-Element Thermal Modeling of Interconnects Derived from a Projection-based Leaning Algorithm";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• J. Choe:
  "Memory Technology 2021: Trends & Challenges";
  SISPAD, Dallas, Texas and Virtual (invited); 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 5.
  
  
• D. Connelly, H. Y. Wong, R. Burton, H. Takeuchi, R. Mears:
  "RFSOI n-MOSFET OI-Layer Ground-Plane Engineering with Quasi-3D Simulations";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 5.
  
  
• P. Dhillon, N. C. Dao, P. H. W. Leong, H. Y. Wong:
  "TCAD Modeling of Cryogenic nMOSFET ON-State Current and Subthreshold Slope";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• R. Duflou, M. Houssa, A. Afzalian:
  "Electron-phonon scattering in cold-metal contacted two-dimensional semiconductor devices";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• T. Dutta, F. Adamu-Lema, D. Nagy, A. Asenov, V. Nebesnyi, J.-W. Han, Y Widjaja:
  "Equivalent Circuit Macro-Compact Model of the 1T Bipolar SRAM Cell";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• J. Ender, R. Orio, S. Fiorentini, Siegfried Selberherr, W Goes, V. Sverdlov:
  "Reinforcement Learning Approach for Sub-Critical Current SOT-MRAM Switching";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 5.
  
  
• J. Fernandez, N. Seoane, E. Comesaña, K. Kalna, A. Garcia-Loureiro:
  "Impact of metal grain granularity on three gate-all-around advanced architectures";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 5.
  
  
• L. Filipovic, X. Klemenschits:
  "Fast Model for Deposition in Trenches using Geometric Advection";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 5.
  
  
• S. Fiorentini, J. Ender, R. Orio, Siegfried Selberherr, V. Sverdlov:
  "Spin and Charge Drift-Diffusion Approach to Torque Computation in Magnetic Tunnel Junctions";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• K. Fukuda, J. Hattori, H. Asai, J. Yaita, J. Kotani:
  "Temperature-dependent mobility modeling of GaN HEMTs by cellular automaton method";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• G. Gaddemane, R. Duflou, K. Sankaran, G. Pourtois, M. Houssa, A. Afzalian:
  "Ab-intio based electron-phonon scattering for 2D materials within the NEGF framework";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• S. Gao, D. Issartel, R. Orobtchouk, F. Mandorlo, D. Golanski, A. Cathelin, F. Calmon:
  "3D Electro-optical Simulations for Improving the Photon Detection Probability of SPAD Implemented in FD-SOI CMOS Technology";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• X. Gao, J. P. Mendez, T. Lu, E.M. Anderson, D.M. Campbell, J.A. Ivie, S.W. Schmucker, A. Grine, P. Lu, L.A. Tracy, R. Arghavani, S. Misra:
  "Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 5.
  
  
• J. Ghosh, S. Y. Lim, A. V.-Y. Thean:
  "Bridge-Defect Prediction in SRAM Circuits Using Random Forest, XGBoost, and LightGBM Learners";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• A. Gupta, N. Chauhan, O. Prakash, H. Amrouch:
  "On the Resiliency of NC-FinFET SRAMs against Variation: MFIS Structure";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• S.-C. Han, J. Choi, S.-M. Hong:
  "Acceleration of Three-Dimensional Device Simulation with the 3D Convolutional Neural Network";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• Y. Hu, W. Chakraborty, H. Ye, S. Datta, K. Cho:
  "First-principles investigation of amorphous n-type In2O3 for BEOL transistor";
  Talk: SISPAD, Dallas, Texas and Virtual (invited); 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• T. Iizuka, M. Miura-Mattausch, D.S. Navarro, H. Kikuchihara, T. Umeda, H.J. Mattausch, T. Yamamoto:
  "Miller-Capacitance Analysis of High-Voltage MOSFETs and Optimization Strategies for Low- Power Dissipation";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• A. Jay, A. Hemeryck, F. Cristiano, D. Rideau, P.L. Julliard, V. Goiffon, A. LeRoch, N. Richard, L. Martin-Samos, S. DeGironcoli:
  "Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 5.
  
  
• L. Jiang, A. Pal, E.M. Bazizi, H. Ren, M. Naik, B. Alexander, B. Ayyagari:
  "Complementary FET for Advanced Technology Nodes: Where Does It Stand?";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• S. Jin, A.-T. Pham, W. Choi, M.A. Pourghaderi, U. Kwon, D. S. Kim:
  "Considerations for DD Simulation at Cryogenic Temperature";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• S.W. Jones:
  "Cost Simulations to Enable PPAC Aware Technology Development";
  SISPAD, Dallas, Texas and Virtual (invited); 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• P.L. Julliard, A. Jay, M. Gunde, N. Salles, F. Monsieur, N. Guitard, T. Cabout, S. Joblot, L. Martin-Samos, D. Rideau, F. Cristiano, A. Hemeryck:
  "Kinetic Monte Carlo for Process Simulation: First Principles Calibrated Parameters for BO₂";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 5.
  
  
• M. Karner, G. Rzepa, O. Baumgartner, G. Strof, F. Schanovsky, F. Mitterbauer, C. Kernstock, HW. Karner, Z. Stanojevic:
  "Variability-Aware DTCO Flow: Projections to N3 FinFET and Nanosheet 6T SRAM";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• P.A. Khomyakov, J. Wellendorff, M. Palsgaard, T. Gunst, H. Miyagi, B. Verstichel, F. Corsetti, V. Arcisauskaite, U. Martinez, A. Blom, S. Smidstrup:
  "Ab initio LCAO hybrid functional approach for accurate, large- scale atomistic electronic structure calculations of semiconductor materials, interfaces and gate stacks";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• S. Kim, J. H. Kim, U. Kwon, K. Lee, D. S. Kim:
  "Potential Engineering to Enhance Transfer Characteristics of Advanced CIS Pixel based on VTG - FDTI scheme";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• X. Klemenschits, Siegfried Selberherr, L. Filipovic:
  "Combined Process Simulation and Emulation of an SRAM Cell of the 5nm Technology Node";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 5.
  
  
• U. Kwon, Y. Park, Y.-S. Kim, J. Yoo, D. S. Kim:
  "TCAD challenges and opportunities to find a feasible device architecture for sub-3nm scaling";
  Talk: SISPAD, Dallas, Texas and Virtual (invited); 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 6.
  
  
• H. Lee, M. Shin:
  "Quantum Transport Simulations of Short Channel Effects Induced by Domain Interactions in Ferroelectric FETs";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 5.
  
  
• Y.-K. Lin, J. Wang, T. Okagaki, S. Jin, A.-T. Pham, Y. Park, U. Kwon, W. Choi, D. S. Kim:
  "Negative-Capacitance FETs for Advanced Nodes: Circuit Performance and Variability Analysis with Ferroelectric Dynamic Switching";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• S. Martinie, O. Rozeau, P. Kolev, P. Scheer, S. Ghouli, A. Juge, H. Lee, T. Poiroux:
  "Modeling of Doping Effects in Surface Potential Based Compact Model of Fully Depleted SOI MOSFET";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• J. P. Mendez, D. Mamaluy, X. Gao, S. Misra:
  "Quantum Transport Simulations for Si:P δ-layer Tunnel Junctions";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 5.
  
  
• V. Moroz, J. Kawa, X.-W. Lin, A. R. Brown, P. Asenov, J . Lee, M. Bajaj, T. Michalak, C. Riddet, A. Svizhenko, R. Hentschke, S. Smidstrup:
  "Challenges in Design and Modeling of Cold CMOS HPC Technology";
  SISPAD, Dallas, Texas and Virtual (invited); 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• H. Morrell, H. Y. Wong:
  "Study of using Quantum Computer to Solve Poisson Equation in Gate Insulators";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• D. Nielsen, M. Van de Put, M. Fischetti:
  "Investigating the use of HSE Hybrid Functionals to Improve Electron Transport Calculations in Si, Ge, Diamond, and SiC";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 5.
  
  
• T. Nishimura, K. Eikyu, K. Sonoda, T. Ogata:
  "Full band Monte Carlo analysis of the uniaxial stress impact on 4H-SiC high energy transport";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• A. Pal, E.M. Bazizi, B. Colombeau, B. Alexander, B. Ayyagari:
  "Nanosheet Width Investigation for Gate-All-Around Devices Targeting SRAM Application";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• J. Y. Park, K. Gyeom, J. B. Kim, S.-M. Lee, S.-J. Kim, H. Ko, S. Lee, S. H. Lee, I. Jang, D. S. Kim:
  "Mechanism investigation of temperature dependent growth and etching process of GeCl₄ on SiGe surface: ab initio study";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 5.
  
  
• B. Parvais, R. ElKashlan, H. Yu, A. Sibaja-Hernandez, B. Vermeersch, V. Putcha, P. Cardinael, R. Rodriguez, A. Khaled, A. Alian, U. Peralagu, M. Zhao, S. Yadav, G. Gramegna, J. Van Driessche, N. Collaert:
  "Transistor modelling for mm-Wave technology pathfinding";
  Talk: SISPAD, Dallas, Texas and Virtual (invited); 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• O. Phadke, A. De, J. Sakhuja, V. Saraswat, U. Ganguly:
  "Experimentally Validated Pr_0.7Ca_0.3MnO₃ RRAM Verilog-A model based Izhikevich Neuronal Dynamics";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 5.
  
  
• M. Poljak, M. Matic:
  "Bandstructure Effects in Phosphorene Nanoribbon MOSFETs from NEGF Simulations Using a New DFT-based Tight-binding Hamiltonian Model";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• P.D. Reyntjens, M.L. Van de Put, W.G. Vandenberghe:
  "Ballistic quantum transport study of Al contacting silicane using empirical pseudopotentials";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• D. Rideau, Y. Oussaiti, J. Grebot, R. Helleboid, A. Lopez, G. Mugny, E. Bourreau, D. Golanski, B. Mamdy, H. Wehbe-Alause, I. Nicholson, S. Pellegrini, C. E: Vlimant, M. Agnew, T. Cazimajou, M. Pala, J. Saint-Martin, P. Dollfus:
  "Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability";
  Talk: SISPAD, Dallas, Texas and Virtual (invited); 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• F. Rodrigues, L. F. Aguinsky, A. Toifl, A. Scharinger, A. Hössinger, J. Weinbub:
  "Surface Reaction and Topography Modeling of Fluorocarbon Plasma Etching";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• N. Rostand, D. Lambert:
  "Unified SPICE Model for Transient Ionizing Radiation Response of SOI MOSFET";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• A. Saha, S.K. Gupta:
  "Multi-Domain Ferroelectric FETs with Negative and Enhanced Positive Capacitance for Logic Applications";
  Talk: SISPAD, Dallas, Texas and Virtual (invited); 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• M. N. Sakib, H. Vakili, S. Ganguly, M. Stan, A.W. Ghosh:
  "Compact SPICE Model of Topological Textures on Magnetic Racetracks for Design Space Exploration";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• K. Shimozato, Y. Nakamura, T. Sato:
  "Analysis of Thermal Concentration Failure in Unclamped Inductive Switching Based on Three-Dimensional Electro-Thermal Simulation With On-Chip Variation";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• S. Souma, M. Ogawa:
  "Neural network model for implementation of electron-phonon scattering in nanoscale device simulations based on NEGF method";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• T. Suwa:
  "2D-TCAD Simulation Study of Capture Layer and Repellent Layer of Current Filament in Trench-Gate IGBTs";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• S. Tiwari, M.L. Van de Put, B. Soree, W.G. Vandenberghe:
  "Ab initio modeling of few-layer dilute magnetic semiconductors";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 5.
  
  
• H. Tsukamoto, S. Bian, T. Sato:
  "Statistical Device Modeling with Arbitrary Model-Parameter Distribution via Markov Chain Monte Carlo";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 5.
  
  
• N. Uene, T. Mabuchi, M. Zaitsu, S. Yasuhara, T. Tokumasu:
  "Reactive Force-Field Molecular Dynamics Study of the Effect of Gaseous Species on Silicon-Germanium Alloy Growth by PECVD Techniques";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• H. Vakili, S. Ganguly, B. Muralidharan, A.W. Ghosh:
  "Non-Equilibrium Greens Function Approach to Majorana Bound States in 1D nanowires";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• M. Veresko, M.-C. Cheng:
  "An Effective Simulation Methodology of Quantum Nanostructures based on Model Order Reduction";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 5.
  
  
• D. Verreck, A. Arreghini, G. Van den Bosch, A. Furnemont, M. Rosmeulen:
  "Program charge interference and mitigation in vertically scaled single and multiple-channel 3D NAND flash memory";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• K. Vuttivorakulchai, M.A. Pourghaderi, U. Kwon, M. Vörös, B. Lee, S. Jin, Y. Park, W. Choi, D. S. Kim:
  "First-principle Extraction of Surface Roughness in Si/Oxide Interfaces";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• T. Weingartner, M. Law, K. Green, A. Thomas, H. Johnson, P. Leger:
  "TCAD Comprehensive Silicon Strain Model Using Finite Element Quasi-Fermi Discretization";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 5.
  
  
• J. Wu, B. Magyari-Koepe:
  "Advances in atomistic modeling for predictive TCAD applications";
  Talk: SISPAD, Dallas, Texas and Virtual (invited); 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• Q. Zhang, K. Suzuki, H. Miura:
  "Theoretical study on strain-controllable gradient Schottky barrier of dumbbell-shape graphene nanoribbon for highly sensitive strain sensors";
  Talk: SISPAD, Dallas, Texas and Virtual; 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.
  
  
• G. Zhou, T. Sun, R. Younas, C.L. Hinkle:
  "Materials and Device Strategies for Nanoelectronic 3D Heterogeneous Integration";
  Talk: SISPAD, Dallas, Texas and Virtual (invited); 2021-09-27 - 2021-09-29; in: "Proc. of SISPAD", (2021), 1 - 4.