SISPAD 2020 Proceedings

• K. Abe, K. Oda, M. Tomita, T. Matsuki, T. Matsukawa, T. Watanabe:
  "Effect of Unit-cell Arrangement on Performance of Multi-stage-planar Cavity-free Unileg Thermoelectric Generator Using Silicon Nanowires";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 75 - 78.
  
  
• S.M. Amoroso, J . Lee, A. R. Brown, P. Asenov, X.-W. Lin, T. Yang, V. Moroz:
  "High-sigma analysis of DRAM write and retention performance: a TCAD-to-SPICE approach";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 35 - 38.
  
  
• K. Arihori, M. Ogawa, S. Souma, J. Sato-Iwanaga, M. Suzuki:
  "Transient simulation of graphene FET gated by electrolyte medium";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 367 - 370.
  
  
• H. Asai, T. Kuroda, K. Fukuda, J. Hattori, T. Ikegami, N. Mori:
  "TCAD simulation for transition metal dichalcogenide channel Tunnel FETs consistent with ab-initio based NEGF calculation";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 93 - 96.
  
  
• G Atmaca, M.-A. Jaud, J Buckley, J Biscarrat, R Gwoziecki, M. Plissonnier, T. Poiroux, A Yvon, E. Collard:
  "Surge Current Capability in lateral AlGaN/GaN Hybrid Anode Diodes with p-GaN/Schottky Anode";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 233 - 236.
  
  
• A. Balasingam, A. Levy, H Li, P Raina:
  "Monte Carlo Simulation of a Three-Terminal RRAM with Applications to Neuromorphic Computing";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 197 - 199.
  
  
• R. Bayle, O. Cueto, S. Blonkowski, T. Philippe, H. Henry, M. Plapp:
  "Coupling the Multi Phase-Field Method with an Electro-Thermal Solver to Simulate Phase Change Mechanisms in Ge-rich GST based PCM";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 173 - 176.
  
  
• I. Bejenari, A. Burenkov, P. Pichler, I. Deretzis, A. La Magna:
  "Molecular Dynamics Modeling of the Radial Heat Transfer from Silicon Nanowires";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 67 - 70.
  
  
• S. Bhagdikar, S. Mahapatra:
  "Benchmarking Charge Trapping Models with NBTI, TDDS and RTN Experiments";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 117 - 120.
  
  
• P. Blaise, U Kapoor, M. Townsend, E. Guichard, J. Charles, D. Lemus, T. Kubis:
  "Nanoscale FET: How To Make Atomistic Simulation Versatile, Predictive, and Fast at 5nm Node and Below";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 249 - 252.
  
  
• J Byun, D. H. Kang, M. Shin:
  "Effect of Shape Deformation by Edge Roughness in Spin-Orbit Torque Magnetoresistive RandomAccess Memory";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 205 - 208.
  
  
• D. Chanemougame, J. Smith, P. Gutwin, B. Byrns, L. Liebmann:
  "Agile Pathfinding Technology Prototyping: the Hunt for Directional Correctness";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 301 - 305.
  
  
• C.-Y. Cheng, D. Vasileska:
  "A Novel Full-Band Monte Carlo Device Simulator with Real-Space Treatment of the Short-Range Coulomb Interactions for Modeling 4H-SiC Power Devices";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 149 - 152.
  
  
• G. Choe, W. Shim, J. Hur, A. Khan, S. Yu:
  "Impact of Random Phase Distribution in 3D Vertical NAND Architecture of Ferroelectric Transistors on In-Memory Computing";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 165 - 168.
  
  
• M.-H. Chuang, Y. Li:
  "Energy Band Calculation of Si/Si_0.7Ge_0.3 Nanopillars in k Space";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 23 - 26.
  
  
• T. Dutta, F. Adamu-Lema, A. Asenov, Y Widjaja, V Nebesny:
  "Dynamic Simulation of Write '1' Operation in the Bi-stable 1-Transistor SRAM Cell";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 237 - 240.
  
  
• J. Ender, M Mohamedou, S. Fiorentini, R. Orio, Siegfried Selberherr, W Goes, V. Sverdlov:
  "Efficient Demagnetizing Field Calculation for Disconnected Complex Geometries in STT-MRAM Cells";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 213 - 216.
  
  
• L. Filipovic:
  "Electromigration Model for Platinum Hotplates";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 315 - 318.
  
  
• S. Fiorentini, J. Ender, R. Orio, Siegfried Selberherr, W Goes, V. Sverdlov:
  "Computation of Torques in Magnetic Tunnel Junctions through Spin and Charge Transport Modeling";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 209 - 212.
  
  
• K. Fukuda, J. Hattori, H. Asai, J. Yaita, J. Kotani:
  "A continuous cellular automaton method with flux interpolation for two-dimensional electron gas electron transport analysis";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 55 - 58.
  
  
• M. Fukuda, Y. Ishikawa:
  "Simulation and Evaluation of Plasmonic Circuits";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 265 - 267.
  
  
• G. Gandus, Y. Lee, D. Passerone, M. Luisier:
  "Efficient partitioning of surface Green's function: toward ab initio contact resistance study";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 177 - 180.
  
  
• X. Gao, A. Huang, N. Trask, S. Reza:
  "Physics-Informed Graph Neural Network for Circuit Compact Model Development";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 359 - 362.
  
  
• X. Gao, L. Tracy, E.M. Anderson, D.A. Campbell, J.A. Ivie, T. Lu, D. Mamaluy, S. Schmuckery, S. Misra:
  "Modeling Assisted Room Temperature Operation of Atomic Precision Advanced Manufacturing Devices";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 277 - 280.
  
  
• V. P. Georgiev, A. Sengupta, P Maciazek, O. Badami, C. Medina-Bailon, T. Dutta, F. Adamu-Lema, A. Asenov:
  "Simulation of gated GaAs-AlGaAs resonant tunneling diodes for tunable terahertz communication applications";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 241 - 244.
  
  
• S. Gopalan, G. Gaddemane, M.L. Van de Put, M.V. Fischetti:
  "Theoretical study of electronic transport in monolayer SnSe";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 363 - 366.
  
  
• T. Hamano, K. Urabe, K. Eriguchi:
  "Model analysis for effects of spatial and energy profiles of plasma process-induced defects in Si substrate on MOS device performance";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 125 - 127.
  
  
• S.-C. Han, J. Choi, S.-M. Hong:
  "Electrostatic Potential Profile Generator for Two-Dimensional Semiconductor Devices";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 297 - 300.
  
  
• F.A. Herrera, M. Mattausch, T. Iizuka, H. Kikuchihara, H.J. Mattausch, H. Takatsuka:
  "Universal Feature of Trap-Density Increase in Aged MOSFET and Its Compact Modeling";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 109 - 112.
  
  
• S.-M. Hong, P.-H. Ahn:
  "AC NEGF Simulation of Nanosheet MOSFETs";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 289 - 292.
  
  
• T. Iizuka, D. Navarro, M. Miura-Mattausch, H. Kikuchihara, H.J. Mattausch, D.N. Rus:
  "Predictive Compact Modeling of Abnormal LDMOS Characteristics Due to Overlap-Length Modification";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 157 - 160.
  
  
• K. Itoh:
  "Forefront of Silicon Quantum Computing";
  Talk: SISPAD, Virtual (invited); 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 1 - 2.
  
  
• L. Jiang, A. Pal, E.M. Bazizi, M. Saremi, B. Alexander, A. Sangamalli:
  "Complementary FET Device and Circuit Level Evaluation Using Fin-Based and Sheet-Based Configurations Targeting 3nm Node and Beyond";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 323 - 326.
  
  
• P.L. Julliard, P. Dumas, F. Monsieur, F. Hilario, D. Rideau, A. Hemeryck, F. Cristiano:
  "Implant heating contribution to amorphous layer formation: a KMC approach";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 43 - 46.
  
  
• G. Kang, J. Jeon, J. Kim, H. Ahn, I. Jang, D. Kim:
  "First-principles study of dopant trap level and concentration in Si(110)/a-SiO₂ interface";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 19 - 21.
  
  
• N. Kariya, M. Tsuda, T. Kurusu, M. Kondo, K. Nishitani, H. Tokuhira, J. Shimokawa, H. Tanimoto, S. Onoue, T. Kato, K. Hosotani, F. Arai, M. Fujiwara, Y. Uchiyama, K. Ohuchi:
  "A TCAD Study on Mechanism and Countermeasure for Program Characteristics Degradation of 3D Semicircular Charge Trap Flash Memory";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 161 - 164.
  
  
• J. Kim, J. Yoo, J. Jung, K. Kim, J. Bae, Y. Kim, O. Kwon:
  "Novel Optimization Method using Machinelearning for Device and Process Competitiveness of BCD Process";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 343 - 346.
  
  
• S. Kim, L. Kwangseok, H.-K. Noh, Y. Shin, K.-B. Chang, J. Jeong, S. Baek, M.G. Kang, K. Cho, D.-W. Kim, D. Kim:
  "Automatic Modeling of Logic Device Performance Based on Machine Learning and Explainable AI";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 47 - 50.
  
  
• Y. Kim, S. Myung, J. Ryu, C. Jeong, D.S. Kim:
  "Physics-augmented Neural Compact Model for Emerging Device Technologies";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 257 - 260.
  
  
• X. Klemenschits, Siegfried Selberherr, L. Filipovic:
  "Geometric Advection Algorithm for Process Emulation";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 59 - 62.
  
  
• M. Kobayashi:
  "On the Physical Mechanism of Negative Capacitance Effect in Ferroelectric FET";
  Talk: SISPAD, Virtual (invited); 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 83 - 87.
  
  
• S.R. Kola, Y. Li, N. Thoti:
  "Characteristics of Gate-All-Around Silicon Nanowire and Nanosheet MOSFETs with Various Spacers";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 79 - 82.
  
  
• H. Koshimoto, H. Ishimabushi, J. Yoo, Y. Kayama, S. Yamada, U. Kwon, D. Kim:
  "Gummel-cycle Algebraic Multigrid Preconditioning for Large-scale Device Simulations";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 51 - 54.
  
  
• R. Kosik, J. Cervenka, H. Kosina:
  "Numerical Solutionof the Constrained Wigner Equation";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 189 - 191.
  
  
• H. Kosina, H. Seiler, V. Sverdlov:
  "Analytical Formulae for the Surface Green's Functions of Graphene and 1T' MoS₂ Nanoribbons";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 185 - 188.
  
  
• T. Kunikiyo, H. Sato, T. Kamino, K. Iizuka, K. Sonoda, T. Yamashita:
  "A technique for phase-detection auto focus under near-infrared-ray incidence in a back-side illuminated CMOS image sensor pixel with selectively grown germanium on silicon";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 137 - 140.
  
  
• P. Lapham, O. Badami, C. Medina-Bailon, F. Adamu-Lema, T. Dutta, D. Nagy, V. Georgiev, A. Asenov:
  "A Combined First Principles and Kinetic Monte Carlo study of Polyoxometalate based Molecular Memory Devices";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 273 - 276.
  
  
• N. D. Le, B. Davier, P. Dollfus, M. Pala, A. Bournel, J. Saint-Martin:
  "Full Band Monte Carlo simulation of phonon transfer at interfaces";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 27 - 30.
  
  
• K Li, E Yagyu, H. Saito, K. H. Teo, S. Rakheja:
  "Compact modeling of gate leakage phenomenon in GaN HEMTs";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 225 - 228.
  
  
• C. Liu, Y. Li, Y. Yang, C.-Y. Chen, M.-H. Chuang:
  "Automatic Device Model Parameter Extractions via Hybrid Intelligent Methodology";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 355 - 358.
  
  
• T. Ma:
  "Future of Power Electronics from TCAD Perspective";
  Talk: SISPAD, Virtual (invited); 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 7 - 10.
  
  
• D. Maki, M. Ogawa, S. Souma:
  "Tight-binding simulation of optical gain in h-BCN for laser application";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 153 - 156.
  
  
• S. Martinie, O. Rozeau, T. Poiroux, P. Scheer, S. Ghouli, M. Kang, A. Juge, H. Lee:
  "L-UTSOI: A compact model for low-power analog and digital applications in FDSOI technology";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 311 - 314.
  
  
• J. McGhee, V. P. Georgiev:
  "First Principle Simulations of Electronic and Optical Properties of a Hydrogen Terminated Diamond Doped by a Molybdenum Oxide Molecule";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 31 - 34.
  
  
• C. Medina-Bailon, O. Badami, H. Carrillo-Nunez, T. Dutta, D. Nagy, F. Adamu-Lema, V. P. Georgiev, A. Asenov:
  "Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS)";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 293 - 296.
  
  
• J. P. Mendez, D. Mamaluy, X. Gao, E.M. Anderson, D.A. Campbell, J.A. Ivie, T.-M. Lu, S.W. Schmucker, S. Misra:
  "Quantum Transport in Si:P δ-Layer Wires";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 181 - 184.
  
  
• D. Milardovich, M. Jech, D. Waldhoer, M. Waltl, T. Grasser:
  "Machine Learning Prediction of Defect Formation Energies in a-SiO2";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 339 - 342.
  
  
• S. Mittal, A. Pal, M. Saremi, E.M. Bazizi, B. Alexander, B. Ayyagari:
  "Via Size Optimization for Optimum Circuit Performance at 3 nm node";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 327 - 330.
  
  
• M. Miura-Mattausch, H. Kikuchihara, S. Baba, D. Navarro, T. Iizuka, K. Sakamoto, H.J. Mattausch:
  "Compact Modeling of Radiation Effects in Thin-Layer SOI-MOSFETs";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 319 - 322.
  
  
• F. A. Mohiyaddin, G. Simion, N. I. Stuyck, A. Elsayed, R. Li, M. Shehata, S. Kubicek, B. Chan, F. Ciubotaru, S. Brebels, F.M. Bufler, G. Eneman, P. Weckx, P. Matagne, A. Spessot, B. Govoreanu, I.P. Radu:
  "TCAD-Assisted MultiPhysics Modeling & Simulation for Accelerating Silicon Quantum Dot Qubit Design";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 253 - 256.
  
  
• S. Myung, J. Kim, Y. Jeon, W. Jang, I. Huh, J. Kim, S. Han, K. Baek, J. Ryu, Y. Kim, J.-S. Doh, H. Kim, C. Jeong, D.S. Kim:
  "Real-Time TCAD: a new paradigm for TCAD in the artificial intelligence era";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 347 - 350.
  
  
• A. Nguyen, H.-N. Nguyen, S Venimadhavan, V Venkattraman, D Parent, H. Y. Wong:
  "Fully Analog ReRAM Neuromorphic Circuit Optimization using DTCO Simulation Framework";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 201 - 204.
  
  
• A. Oshiyama, K.M. Bui, M. Boero, Y. Kangawa, K. Shirahishi:
  "Computics Approach toward Clarification of Atomic Reactions during Epitaxial Growth of GaN";
  Talk: SISPAD, Virtual (invited); 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 11 - 14.
  
  
• Y. Oussaiti, D. Rideau, J.-R. Manouvrier, V. Quenette, B. Mamdy, C. Buj, J. Grebot, H. Wehbe-Alause, A. Lopez, G. Mugny, M. Agnew, E. Lacombe, M. Pala, P. Dollfus:
  "Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 145 - 148.
  
  
• A. Pal, E.M. Bazizi, L. Jiang, M. Saremi, B. Alexander, A. Sangamalli:
  "Self-Aligned Single Diffusion Break Technology Optimization Through Material Engineering for Advanced CMOS Nodes";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 307 - 310.
  
  
• M. Pala, D. Esseni:
  "Ab-initio quantum transport with a basis of unit-cell restricted Bloch functions and the NEGF formalism";
  Talk: SISPAD, Virtual (invited); 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 3 - 6.
  
  
• J. Park, M. Kim, J. Jang, S. Hong:
  "Properties of Conductive Oxygen Vacancies and Compact Modeling of IV Characteristics in HfO2 Resistive Random-Access-Memories";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 217 - 220.
  
  
• A. Pilotto, F. Driussi, D. Esseni, L. Selmi, M. Antonelli, F. Arfelli, G. Biasiol, S. Carrato, G. Cautero, D. De Angelis, R.H. Menk, C. Nichetti, T. Steinhartova, P. Palestri:
  "Full-Band Monte Carlo simulations of GaAs p-i-n Avalanche PhotoDiodes: What Are the Limits of Nonlocal Impact Ionization Models?";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 133 - 136.
  
  
• M. Poljak, M. Matic:
  "Quantum Transport Simulations of Phosphorene Nanoribbon MOSFETs: Effects of Metal Contacts, Ballisticity and Series Resistance";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 371 - 374.
  
  
• S. Raju, B. Wang, M. Mehta, M. Xiao, Y. Zhang, H.Y. Wong:
  "Application of Noise to Avoid Overfitting in TCAD Augmented Machine Learning";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 351 - 354.
  
  
• P.D. Reyntjens, S. Tiwari, M.L. Van de Put, B. Soree, W.G. Vandenberghe:
  "Ab-initio Study of Magnetically Intercalated Tungsten Diselenide";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 97 - 100.
  
  
• A.-S. Royet, L. Dagault, S. Kerdiles, P.A. Alba, J.P. Barnes, F. Cristiano, K. Huet:
  "Undoped SiGe material calibration for numerical nanosecond laser annealing simulations";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 89 - 92.
  
  
• H. Ryu, J. Kang:
  "A Modeling Study on Performance of a CNOT Gate Devices based on Electrode-driven Si DQD Structures";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 261 - 263.
  
  
• A. Scharinger, P. Manstetten, A. Hössinger, J. Weinbub:
  "Generative Model Based Adaptive Importance Sampling for Flux Calculations in Process TCAD";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 39 - 42.
  
  
• L. Schulz, D. Schulz:
  "Multiband Phase Space Operator for Narrow Bandgap Semiconductor Devices";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 383 - 386.
  
  
• L. Schulz, D. Schulz:
  "Time-Resolved Mode Space based QuantumLiouville type Equations applied onto DGFETs";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 331 - 334.
  
  
• A. Sciuto, I. Deretzis, M.G. Grimaldi, K. Huet, I. Bejenari:
  "Advanced simulations on laser annealing: explosive crystallization and phonon transport corrections";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 71 - 74.
  
  
• J. Seo, M. Shin:
  "Effect of Atomic Interface on Tunnel Barrier in Ferroelectric HfO2 Tunnel Junctions";
  Talk: SISPAD, Proc. of SISPAD; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 229 - 232.
  
  
• U. Sharma, S. Mahapatra:
  "A TCAD Framework for Assessing NBTI Impact Under Drain Bias and Self-Heating Effects in Replacement Metal Gate (RMG) p-FinFETs";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 121 - 124.
  
  
• N. Shigyo, M. Watanabe, K. Kakushima, T. Hoshii, K. Furukawa, A. Nakajima, K. Satoh, T. Matsudai, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai:
  "Modeling and Simulation of Si IGBTs";
  Talk: SISPAD, Virtual (invited); 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 129 - 132.
  
  
• Z. Stanojevic, G. Strof, O. Baumgartner, G. Rzepa, M. Karner:
  "Performance and Leakage Analysis of Si and Ge NWFETs Using a Combined Subband BTE and WKB Approach";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 63 - 66.
  
  
• S. Su, J. Cai, E. Chen, L. Li, W. Wong:
  "Impact of Schottky Barrier on the Performance of Two-Dimensional Material Transistors";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 285 - 287.
  
  
• T. Suwa:
  "Investigation of the relationship between current filament movement and local heat generation in IGBTs by using modified avalanche model of TCAD";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 141 - 144.
  
  
• Y. Suzuki, Y. Fujita, K. Fauziah, T. Nogita, H. Ikeda, T. Watanabe, Y. Kamakura:
  "Estimation of Phonon Mean Free Path in Small-Scaled Si Wire by Monte Carlo Simulation";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 15 - 18.
  
  
• N. Thoti, Y. Li, S.R. Kola, S. Samukawa:
  "High-Performance Metal-FerroeletricSemiconductor Nanosheet Line Tunneling Field Effect Transistors with Strained SiGe";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 375 - 378.
  
  
• R. Tiwari, N. Choudhury, T. Samadder, S. Mukhopadhyay, N. Parihar, S. Mahapatra:
  "TCAD Incorporation of Physical Framework to Model N and P BTI in MOSFETs";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 113 - 116.
  
  
• A. Toral-Lopez, E. Marin, F.G Ruiz, F. Pasadas, A. Medina-Rull, A. Godoy:
  "Numerical study of surface chemical reactions in 2D-FET based pH sensors";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 269 - 272.
  
  
• N. Uene, T. Mabuchi, M. Zaitsu, S. Yasuhara, T. Tokumasu:
  "Reactive Force-Field Molecular Dynamics Study of the Silicon-Germanium Deposition Processes by Plasma Enhanced Chemical Vapor Deposition";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 105 - 108.
  
  
• M.L. Van de Put, G. Gaddemane, S. Gopalan, M.V. Fischetti:
  "Effects of the Dielectric Environment on Electronic Transport in Monolayer MoS2: Screening and Remote Phonon Scattering";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 281 - 284.
  
  
• A Vaysset, S. Martinie, F. Triozon, O. Rozeau, M.-A. Jaud, R Escoffier, T. Poiroux:
  "MOS-like approach for compact modeling of High-Electron-Mobility Transistor";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 221 - 224.
  
  
• Q. Wang, Y.D. Chen, J. Huang, E. Joseph:
  "A Study of Wiggling AA modeling and Its Impact on the Device Performance in Advanced DRAM";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 101 - 104.
  
  
• H.Y. Wong:
  "Calibrated Si Mobility and Incomplete Ionization Models with Field Dependent Ionization Energy for Cryogenic Simulations";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 193 - 196.
  
  
• H. Yamasaki, K. Miyazaki, Y. Lo, M. Islam, K. Hata, T. Sakurai, M. Takamiya:
  "Power Device Degradation Estimation by Machine Learning of Gate Waveforms";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 335 - 338.
  
  
• T. H Yu:
  "Theoretical Study of Double-Heterojunction AlGaN/GaN/InGaN/d-doped HEMTs for Improved Transconductance Linearity";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 245 - 248.
  
  
• A. Zaka, T. Herrmann, R. Richter, S. Duenkel, R. Jain:
  "TCAD Modeling and Optimization of 28nm HKMG ESF3 Flash Memory";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 169 - 172.
  
  
• Q. Zhang, K. Suzuki, H. Miura:
  "A First-principles Study on the Strain-induced Localized Electronic Properties of Dumbbell-shape Graphene Nanoribbon for Highly Sensitive Strain Sensors";
  Talk: SISPAD, Virtual; 2020-09-23 - 2020-10-06; in: "Proc. of SISPAD", (2020), 379 - 382.