SISPAD 2018 Proceedings

• F. Adamu-Lema, M. Duan, V. P. Georgiev, A. Asenov:
  "A Carrier Lifetime Sensitivity Probe Based on Transient Capacitance: A novel method to Characterize Lifetime in Z2FET";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 232 - 235.
  
  
• R. Anandkrishnan, S. Bhagdikar, N. Choudhury, R. Rao, B. Fernandez, A. Chaudhury, N. Parihar, S. Mahapatra:
  "A Stochastic Modeling Framework for NBTI and TDDS in Small Area p-MOSFETs";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 181 - 185.
  
  
• M.G. Ancona, J.P. Calame, D.J. Meyer, S. Rajan:
  "Device Modeling of Graded III-N HEMTs for Improved Linearity";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 154 - 158.
  
  
• E. Bär, J. Lorenz:
  "The Effect of Etching and Deposition Processes on the Width of Spacers Created during Self-Aligned Double Patterning";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 236 - 239.
  
  
• B. Bakeroot, B. De Jaeger, N. Ronchi, S. Stoffels, M. Zhao, S. Decoutere:
  "The Influence of Carbon in the Back-Barrier Layers on the Surface Electric Field Peaks in GaN Schottky Diodes";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 240 - 243.
  
  
• S. Baudot, S. Guissi, A.P. Milenin, J. Ervin, T. Schram:
  "N7 FinFET Self-Aligned Quadruple Patterning Modeling";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 344 - 347.
  
  
• E.M. Bazizi, E. Banghart, B. Zhu, J.H.M. Tng, F. Benistant, Y. Hu, X. He, D. Zhou, H.-C. Lo, D. Choi, J.G. Lee:
  "14nm FinFET Device Boost via 2nd Generation Fins Optimized for High Performance CMOS Applications";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 202 - 205.
  
  
• S. Berrada, H. Carrillo-Nunez, J. Lee, C. Medina-Bailon, T. Dutta, M. Duan, F. Adamu-Lema, V. P. Georgiev, A. Asenov:
  "NESS: New Flexible Nano-Electronic Simulation Software";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 22 - 25.
  
  
• S. Berrada, J . Lee, H. Carrillo-Nunez, C. Medina-Bailon, F. Adamu-Lema, V. P. Georgiev, A. Asenov:
  "Quantum Transport Investigation of Threshold Voltage Variability in Sub-10 nm Junctionless Si Nanowire FETs";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 244 - 247.
  
  
• H. Carrillo-Nunez, J . Lee, S. Berrada, C. Medina-Bailon, M. Luisier:
  "Efficient Two-Band based Non-Equilibrium Green´s Function Scheme for Modeling Tunneling Nano-Devices";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 141 - 144.
  
  
• S. Cha, S.-M. Hong:
  "A Deterministic Multi-Subband Boltzmann Transport Equation Solver for GaN Based HEMTs";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 163 - 166.
  
  
• Z. Chen, J. Liu, J. Zhen, L. Sun:
  "Investigation of the Dynamic Thermal Characteristic in Bulk FinFET";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 251 - 254.
  
  
• Y. Chu, P. Sarangapani, J. Charles, G. Klimeck, T. Kubis:
  "Electron-Only Explicit Screening Quantum Transport Model for Semiconductor Nanodevices";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 9 - 13.
  
  
• H. Dixit, J. Cho, F. Benistant:
  "First-Principles Evaluation of Resistance Contributions in Ruthenium Interconnects for Advanced Technology Nodes";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 220 - 223.
  
  
• M. Duan, F. Adamu-Lema, P. Asenov, T. Dutta, X. Wang, V. P. Georgiev, C. Millar, P. Pfäffli, A. Asenov:
  "Statistical Variability Simulation of Novel Capacitor-less Z2FET DRAM: From Transistor to Circuit";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 258 - 261.
  
  
• M. Duan, B. Cheng, C. Medina-Bailon, F. Adamu-Lema, P. Asenov, C. Millar, P. Pfäffli, A. Asenov:
  "Modelling on Aging Induced Time Dependent Variability of Z2FET for Memory Applications";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 119 - 122.
  
  
• J. Duarte, Y.-K. Lin, Y.-H. Liao, A. Sachid, M.-Y. Kao, H. Agarwal, P. Kushwaha, K. Chatterjee, D. Kwon, H. Chang, S. Salahuddin, C. Hu:
  "Negative-Capacitance FinFETs: Numerical Simulation, Compact Modeling and Circuit Evaluation";
  Talk: SISPAD, Austin, TX, USA (invited); 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 123 - 128.
  
  
• F. Ducry, K. Portner, S. Andermatt, M. Luisier:
  "Investigation of the Electrode Materials in Conductive Bridging RAM from First-Principle";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 107 - 110.
  
  
• T. Dutta, V. P. Georgiev, A. Asenov:
  "Interplay of RDF and Gate LER Induced Statistical Variability in Negative Capacitance FETs";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 262 - 265.
  
  
• L. Filipovic, R.L. de Orio:
  "Modeling the Influence of Grains and Material Interfaces on Electromigration";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 83 - 87.
  
  
• X. Gao, B. Kerr, A. Huang, G. Hennigan, L. Musson, M. Negoita:
  "Analytic Band-to-Trap Tunneling Model Including Electric Field and Band Offset Enhancement";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 266 - 270.
  
  
• A. Ghetti, A. Benvenuti, A. Mauri, H. Liu, C. Mouli:
  "Emerging Memory Modeling Challenges";
  Talk: SISPAD, Austin, TX, USA (invited); 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 101 - 106.
  
  
• T. Gunst, A. Blom, K. Stokbro:
  "First-Principles Method for the Phonon-Limited Resistivity of Metals";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 79 - 82.
  
  
• J. Hattori, T. Ikegami, K. Fukuda, H. Ota, S. Migita, H. Asai:
  "Device Simulation of Negative-Capacitance Field-Effect Transistors With a Ferroelectric Gate Insulator";
  Talk: SISPAD, Austin, TX, USA (invited); 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 214 - 219.
  
  
• A. Huang, X. Gao, R. Pawlowski, J. Gates, L. Musson, G. Hennigan, M. Negoita:
  "A Versatile Harmonic Balance Method in a Parallel Framework";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 271 - 275.
  
  
• T. Iizuka, M. Miura-Mattausch, H. Hashigami, H.J. Mattausch:
  "Consistent Modeling of Snapback Phenomenon Based on Conventional I-V Measurements";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 159 - 162.
  
  
• M. Kim, J. Seo, M. Shin:
  "Biaxial Strain based Performance Modulation of Negative-Capacitance FETs";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 318 - 322.
  
  
• Y. Kim, U. Monga, J. Lee, M. Kim, J. Park, C. Yoo, K. Jung, S. Hong, S.J. Kim, D.S. Kim, H. Kang:
  "The Efficient DTCO Compact Modeling Solutions to Improve MHC and Reduce TAT";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 58 - 61.
  
  
• H. Kosina, M. Kampl:
  "Effect of Electron-Electron Scattering on the Carrier Distribution in Semiconductor Devices";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 18 - 21.
  
  
• S.R. Kulkarni, D.V. Kadetotad, J.-S. Seo, B. Rajendran:
  "Well-Posed Verilog-A Compact Model for Phase Change Memory";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 369 - 373.
  
  
• U. Kwon, T. Okagaki, Y.-S. Song, S. Kim, Y. Kim, M. Kim, A.-Y. Kim, S. Ahn, J. Shin, Y. Park, J. Kim, D.S. Kim:
  "Intelligent DTCO (iDTCO) for Next Generation Logic Path-Finding";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 49 - 52.
  
  
• J. Lacord, M.-S. Parihar, C. Navarro, F.T. Wakam, M. Bawedin, S. Cristoloveanu, F. Gamiz, J.-C. Barbé:
  "MSDRAM, A2RAM and Z2-FET Performance Benchmark for 1T-DRAM Applications";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 198 - 201.
  
  
• J . Lee, S. Berrada, H. Carrillo-Nunez, C. Medina-Bailon, F. Adamu-Lema, V. P. Georgiev, A. Asenov:
  "The Impact of Dopant Diffusion on Random Dopant Fluctuation in Si Nanowire FETs: A Quantum Transport Study";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 280 - 283.
  
  
• S.-Y. Lee, I. Shin, S.-B. Shim, A. Schmidt, I. Jang, D.S. Kim:
  "TEM Based Dislocation Auto Analysis Flow of Advanced Logic Devices";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 97 - 100.
  
  
• H. Lim, S. Kong, E. Guichard, A. Hössinger:
  "A General Approach for Deformation Induced Stress on Flexible Electronics";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 276 - 279.
  
  
• H.-C. Lo, J. Peng, P. Zhao, E.M. Bazizi, Y. Hu, Y.J. Shi, Y. Qi, A. Vinslava, Y.P. Shen, W. Hong, H. Zang, A.K. Jha, X. Dou, S.Y. Mun, Y. Wang, J.G. Lee, D. Choi, O. Hu, S. Samavedam:
  "Transistor Optimization with Novel Cavity for Advanced FinFET Technology";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 210 - 213.
  
  
• N. Lu, W. Wei, X. Chuai, Y. Mei, L. Li, M. Liu:
  "Investigation of Adsorbed Small-Molecule on Boron Nitride Nanotube (BNNT) Based on First-Principles Calculations";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 284 - 287.
  
  
• S.-C. Lu, Y. Chu, Y. Kim, M.Y. Mohamed, G. Klimeck, T. Palacios, U. Ravaioli:
  "Design Guidelines and Limitations of Multilayer Two-dimensional Vertical Tunneling FETs for Ultra-Low Power Logic Applications";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 138 - 140.
  
  
• M. Luisier, F. Ducry, M.H. Bani-Hashemian, S. Brück, M. Calderara, O. Schenk:
  "Advanced Algorithms for Ab-initio Device Simulations";
  Talk: SISPAD, Austin, TX, USA (invited); 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 62 - 66.
  
  
• A. Mahajan, R. Solanki, R. Sahoo, R. Patrikar:
  "Modeling and Finite Element Simulation of Gate Leakage in Cylindrical GAA Nanowire FETs";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 288 - 292.
  
  
• A. Makarov, V. Sverdlov, S. Selberherr:
  "Field-free Fast Reliable Deterministic Switching in Perpendicular Spin-Orbit Torque MRAM Cells";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 186 - 189.
  
  
• I. Martin-Bragado, Y. Park, C. Zechner, Y. Oh:
  "High Throughput Simulation On The Impurity-Vacancy Diffusion Mechanism Using First-Principles Calculations";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 293 - 296.
  
  
• S. Martinie, O. Rozeau, T. Poiroux, J.-C. Barbé, F. Gilibert, X. Montagner, S. El Ghouli, A. Juge, G.D.J. Smit, A.J. Scholten:
  "New Physical Insight for Analog Application in PSP Bulk Compact Model";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 356 - 359.
  
  
• P. Matagne, H. Nakamura, M.-S. Kim, Y. Kikuchi, T. Huynh-Bao, Z. Tao, W. Li, K. Devriendt, L.-A. Ragnarsson, J. Boemmels, A. Mallik, E. Altamirano-Sachez, F. Sebaai, C. Lorant, N. Jourdan, C. Porret, D. Mocuta, N. Harada, F. Masuoka:
  "DTCO and TCAD for a 12 Layer-EUV Ultra-Scaled Surrounding Gate Transistor 6T-SRAM";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 45 - 48.
  
  
• C. Medina-Bailon, T. Sadi, M. Nedjalkov, J . Lee, S. Berrada, H. Carrillo-Nunez, V. P. Georgiev, S. Selberherr, A. Asenov:
  "Impact of the Effective Mass on the Mobility in Si Nanowire Transistors";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 297 - 300.
  
  
• C. Medina-Bailon, C. Sampedro, J.L. Padilla, A. Godoy, L. Donetti, V. P. Georgiev, F. Gamiz, A. Asenov:
  "Impact of Strain on S/D Tunneling in FinFETs: a MS-EMC Study";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 301 - 304.
  
  
• V.P.K. Miriyala, X. Fong, G. Liang:
  "FANTASI: A Novel Devices-to-Circuits Simulation Framework for Fast Estimation of Write Error Rates in Spintronics";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 53 - 57.
  
  
• K. Mochizuki, S. Ji, R. Kosugi, Y. Yonezawa, H. Okumura:
  "Topography Simulation of 4H-SiC-Chemical-Vapor-Deposition Trench Filling Including an Orientation-Dependent Surface Free Energy";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 331 - 335.
  
  
• S.M. Mopurisetty, M. Bajaj, S. Ganguly:
  "Predictive TCAD of Cu2ZnSnS4 (CZTS) Solar Cells";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 305 - 308.
  
  
• P. Muralidharan, S.M. Goodnick, D. Vasileska:
  "Quasi 1D Multi-Physics Modeling of Silicon Heterojunction Solar Cells";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 14 - 17.
  
  
• M.-H. Na, A. Chu, Y.-M. Lee, A. Young, V. Zalani, H.H. Tran:
  "Rapid and Holistic Technology Evaluation for Exploratory DTCO in Beyond 7nm Technologies";
  Talk: SISPAD, Austin, TX, USA (invited); 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 40 - 44.
  
  
• N. Navlakha, A. Kranti:
  "Physical Insights on Junction Controllability for Improved Performance of Planar Trigate Tunnel FET as Capacitorless Dynamic Memory";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 129 - 132.
  
  
• T. Nishimatsu, A. Payet, B. Lee, Y. Kayama, K. Ishikawa, A. Schmidt, I. Jang, D.S. Kim:
  "Dynamical Space Partitioning for Acceleration of Parallelized Lattice kinetic Monte Carlo Simulations";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 348 - 351.
  
  
• Y. Oh, Y. Park, C. Zechner, I. Martin-Bragado:
  "Integrated Framework of DFT, Empirical potentials and Full Lattice Atomistic Kinetic Monte-Carlo to Determine Vacancy Diffusion in SiGe";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 228 - 231.
  
  
• O. Olanrewaju, A. Castellazzi:
  "VHDL-AMD Thermo-Mechanical Model for Coupled Analysis of Power Module Degradation in Circuit simulation Environments";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 309 - 313.
  
  
• P. Oldiges, C. Zhang, X. Miao, M.G. Kang, T. Yamashita:
  "Technique for Asymmetric Source/Drain Resistance Extraction on a Single Gate Length MOSFET";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 340 - 343.
  
  
• N. Parihar, R. Tiwari, S. Mahapatra:
  "Modeling Channel Length Scaling Impact on NBTI in RMG Si p-FinFETs";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 176 - 180.
  
  
• N. Parihar, R. Tiwari, C. Ndiaye, M. Arabi, S. Mhira, H. Wong, S. Motzny, V. Moroz, V. Huard, S. Mahapatra:
  "Modeling of Process (Ge, N) Dependence and Mechanical Strain Impact on NBTI in HKMG SiGe GF FDSOI p-MOSFETs and RMG p-FinFETs";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 167 - 171.
  
  
• H.-H. Park, W. Choi, M.A. Pourghaderi, J. Kim, U. Kwon, D.S. Kim:
  "Toward More Realistic NEGF Simulations of Vertically Stacked Multiple SiNW FETs";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 206 - 209.
  
  
• J. Park, S.-M. Hong:
  "First Principles Investigation of Al2O3/B-Ga2O3 Interface Structures";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 314 - 317.
  
  
• M. Pesic, V. Di Lecce, D. Pramanik, L. Larcher:
  "Multiscale Modeling of Ferroelectric Memories: Insights into Performances and Reliability";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 111 - 114.
  
  
• A.-T. Pham, S. Jin, M.A. Pourghaderi, J. Kim:
  "Simulations of Self-Heating Effects in SiGe pFinFETs Based on Self-Consistent Solution of Carrier/Phonon BTE Coupled System";
  Talk: SISPAD, Austin, TX, USA (invited); 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 145 - 148.
  
  
• C. Pigot, F. Gilibert, M. Reyboz, M. Bocquet, J.-M. Portal.:
  "PCM Compact Model: Optimized Methodology for Model Card Extraction";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 190 - 193.
  
  
• A. Pilotto, P. Palestri, L. Selmi, M. Antonelli, F. Arfelli, G. Biasiol, G. Cautero, F. Driussi, R.H. Menk, C. Nichetti, T. Steinhartova:
  "An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 26 - 30.
  
  
• N. Prasad, S. Banerjee, L.F. Register:
  "Enhancement of Resonance by the Use of Multiple Tunnel Barriers in Bilayer Graphene-Based Interlayer Tunnel Field Effect Transistors";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 133 - 137.
  
  
• O. D. Restrepo, Q. Gao, S.M. Pandey, E. Cruz-Silva, E.M. Bazizi:
  "First Principles Calculations of the Effect of Stress in the I-V Characteristics of the CoSi 2 /Si Interface";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 67 - 70.
  
  
• D. Rideau, G. Mugny, M. Pala, D. Esseni:
  "Inter-band Coupling in Empirical Pseudopotential Method Based Bandstructure Calculation of Group IV and III-IV Nanostructures";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 224 - 227.
  
  
• N. Rostand, S. Martinie, J. Lacord, O. Rozeau, O. Billoint, J.-C. Barbé, T. Poiroux, G. Hubert:
  "Compact Modelling of Single Event Transient in Bulk MOSFET for SPICE: Application to Elementary Circuit";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 364 - 368.
  
  
• H. Ryu, K.-H. Hong:
  "Optical Properties of Organic Perovskite Materials for Finite Nanostructures";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 31 - 33.
  
  
• S. Sahoo, N. Pandey, D. Saha, S. Ganguly:
  "Atomistic Design of Quantum Biomimetic Electronic Nose";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 34 - 37.
  
  
• P. Sarangapani, Y. Chu, K.C. Wang, D. Valencia, J. Charles, T. Kubis:
  "Nonequilibrium Green's Function Method: Transport and Band Tail Predictions in Transition Metal Dichalcogenides";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 38 - 39.
  
  
• L. Schulz, D. Schulz:
  "Boundary Concepts for an Improvement of the Numerical Solution with Regard to the Wigner Transport Equation";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 75 - 78.
  
  
• P. Sengupta, G. Irudayadass, J. Shi:
  "Design Guidelines for Thermopower Generators with Multi-Layered Black Phosphorus";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 149 - 153.
  
  
• K. Sheikh, L. Wei:
  "Methodology to Generate Approximate Circuits to Reduce Process Induced Degradation in CNFET Based Circuits";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 360 - 363.
  
  
• K. Sonoda, E. Tsukuda, S. Tsuda, T. Hayashi, Y. Akiyama, Y. Yamaguchi, T. Yamashita:
  "Analysis of the Effect of Field Enhancement at Fin Corners on Program Characteristics of FinFET Split-Gate MONOS";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 194 - 197.
  
  
• S.-K. Su, E. Chen, J. Wu:
  "A Simulation Perspective: The Potential and Limitation of Ge GAA CMOS Devices";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 323 - 326.
  
  
• K. Suzuki, F. Yiqing, Y. Luo, H. Miura:
  "Effect of Defects on the Grain and Grain Boundary Strength in Polycrystalline Copper Thin Films";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 88 - 91.
  
  
• L.P. Tatum, M. Sciullo, M.E. Law:
  "Simulation of Hot-Electron Effects with Multi-band Semiconductor Devices";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 327 - 330.
  
  
• S. Tiwari, M.L. Van de Put, B. Soree, W.G. Vandenberghe:
  "Carrier Transport in a Two-Dimensional Topological Insulator Nanoribbon in the Presence of Vacancy Defects";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 92 - 96.
  
  
• A. Toifl, V. Simonka, A. Hössinger, S. Selberherr, J. Weinbub:
  "Steady-State Empirical Model for Electrical Activation of Silicon-Implanted Gallium Nitride";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 336 - 339.
  
  
• D. Valencia, K.-C. Wang, Y. Chu, G. Klimeck, M. Povolotskyi:
  "Surface and Grain-boundary Effects in Copper interconnects Thin Films Modeling with an Atomistic Basis";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 248 - 250.
  
  
• M.L. Van de Put, A.A. Laturia, M.V. Fischetti, W.G. Vandenberghe:
  "Efficient Modeling of Electron Transport with Plane Waves";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 71 - 74.
  
  
• P. B. Vyas, M.L. Van de Put, M.V. Fischetti:
  "Simulation of Quantum Current in Double Gate MOSFETs: Vortices in Electron Transport";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 1 - 4.
  
  
• F.T. Wakam, J. Lacord, M. Bawedin, S. Martinie, S. Cristoloveanu, J.-C. Barbé:
  "Evidence of Fast and Low-Voltage A2RAM '1' State Programming";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 115 - 118.
  
  
• K.-C. Wang, Y. Chu, D. Valencia, J. Geng, J. Charles, P. Sarangapani, T. Kubis:
  "Nonequilibrium Green's Function Method: Büttiker Probes for Carrier Generation and Recombination";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 5 - 8.
  
  
• H.Y. Wong, M. Choi, R. Tiwari, S. Mahapatra:
  "On the NBTI of Junction-less Nanowire and Novel Operation Scheme to Minimize NBTI Degradation in Analog Circuits";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 172 - 175.
  
  
• E. Yu, S. Cho:
  "A Highly Scalable and Energy-Efficient 1T DRAM Embedding a SiGe Quantum Well Structure for Significant Retention Enhancement";
  Poster: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 255 - 257.
  
  
• Y. Zhao, C. Fang, Q. Li, N. Lu, F. Zhang, L. Li:
  "A Compact Model of Drift and Diffusion Memristor Applied in Neuron Circuits Design";
  Talk: SISPAD, Austin, TX, USA; 2018-09-24 - 2018-09-26; in: "Proc. of SISPAD", (2018), 978-1-5386-6790-3; 352 - 355.