SISPAD 2016 Proceedings

• E. Abbaspour, S. Menzel, C. Jungemann:
  "KMC Simulation of the Electroforming, Set and Reset Processes in Redox-based Resistive Switching Devices";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 141 - 144.
  
  
• P. Aguirre, H. Carrillo-Nunez, A. Ziegler, M. Luisier, A. Schenk:
  "Drift-Diffusion Quantum Corrections for In_0.53Ga_0.47As Double Gate Ultra-Thin-Body FETs";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 53 - 56.
  
  
• A. Ajaykumar, X. Zhou, S.B. Chiah, B. Syamal:
  "Unified Regional Fermi-Potential-Based Compact Model for Double Heterostructure HEMTs";
  Poster: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 225 - 228.
  
  
• T. Al-Ameri, V. P. Georgiev, F.-A. Lema, T. Sadi, X. Wang, E. Towie, C. Riddet, C. Alexander, A. Asenov:
  "Impact of strain on the performance of Si nanowires transistors at the scaling limit: A 3D Monte Carlo / 2D Poisson Schrodinger simulation study";
  Poster: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 213 - 216.
  
  
• E. Bär, A. Burenkov, P. Evanschitzky, J. Lorenz:
  "Simulation of Process Variations in FinFET Transistor Patterning";
  Poster: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 299 - 302.
  
  
• E. Bär, J. Niess:
  "Equipment Simulation for Studying the Growth Rate and its Uniformity of Oxide Layers Deposited by Plasma-Enhanced Oxidation";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 137 - 140.
  
  
• M. Bellini, J. Vobecky:
  "3D TCAD analysis of the effect on dI/dt of cathode shorts in Phase Controlled Thyristors";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 125 - 128.
  
  
• M. Bina, A. Philippou, M. Hauf, C. Sandow, F.-J. Niedernostheide:
  "Automated Vertical Design Co-Optimization of a 1200V IGBT and Diode";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 185 - 188.
  
  
• L. Bourdet, J. Li, J. Pelloux-Prayer, F. Triozon, M. Casse, S. Barraud, S. Martinie, D. Rideau, Y. Niquet:
  "High and low-field contact Resistances in Trigate Devices in a Non-Equilibrium Green´s Functions Framework";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 291 - 294.
  
  
• P. Bousoulas, P. Asenov, D. Tsoukalas:
  "Physical Modelling of the SET/RESET characteristics and analog properties of TiO_x/HfO_2-x/TiO_x-based RRAM devices";
  Poster: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 249 - 252.
  
  
• A. Burenkov, J. Lorenz:
  "A possible explanation of the record electrical performance of silicon nanowire tunnel FETs with silicided source contact";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 85 - 88.
  
  
• K. Chiang, J.F. Huang, T.-Y. Cheng, C. Hsiao, J. Sun, C. Cheng, K.-P. Lu, K. Su, C.-K. Lin, K. Chen, K.-H. Tam, T.-Y. Liu, K.-Y. Su, M.-C. Jeng:
  "A Comprehensive Solution for BEOL Variation Characterization and Modeling";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 307 - 310.
  
  
• W.F. Clark, A. Juncker, E. Paladugu, D. Fried, C.J. Wilson, G. Pourtois, M. Gallagher, A. De Jamblinne, D. Piumi, J. Boemmels, Z.S. Tokei, D. Mocuta:
  "A million wafer, virtual fabrication approach to determine process capability requirements for an industry-standard 5nm BEOL two-level metal flow";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 43 - 46.
  
  
• G. Darbandy, M. Schröter, M. Claus:
  "Optimization of Reconfigurable Si NW FETs for Analog High-Frequency Applications";
  Poster: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 245 - 248.
  
  
• S. Datta, N. Shukla:
  "In Quest of the Next Switch";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 173 - 176.
  
  
• Z. Deng, J. Jiang, S. Dong, L. Zhang, J. Zhang, Y. Wang, Z. Yu:
  "Hydrodynamic Electron Transport and Terahertz Plasma-Wave in Topological Insulator FETs (TI-FETs)";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 69 - 72.
  
  
• S. Dhar, H.K. Noh, S.J. Kim, H. Kim, Z. Wu, W.S. Lee, K.K. Bhuwalka, J.C. Kim, C.W. Jeong, U.H. Kwon, S. Maeda, K.H. Lee, A.T. Pham, S. Jin, W.S. Choi:
  "Impact of BTBT, Stress and Interface Charge on Optimum Ge in SiGe pMOS for Low Power Applications";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 345 - 348.
  
  
• S. Di, Z. Lun, P. Chang, L. Shen, K. Zhao, T. Lu, G. Du, X. Liu:
  "Investigation of Scattering Mechanism in Nano-Scale Double Gate In_0.53Ga_0.47As nMOSFETs by a Deterministic BTE Solver";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 193 - 196.
  
  
• O. Dieball, Z. Kargar, D. Ruic, C. Jungemann:
  "A Self-Consistent Solution of the Poisson and Boltzmann Equations for Electrons in Graphene with a Deterministic Approach";
  Poster: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 205 - 208.
  
  
• M.A. Elmessary, D. Nagy, M. Aldegunde, A. Garcia-Loureiro, K. Kalna:
  "3D MC Simulations of Strain, Channel Orientation, and Quantum Confinement Effects in Nanoscale Si SOI FinFETs";
  Poster: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 229 - 232.
  
  
• G. Eneman, A.S. Verhulst, A. De Keersgieter, A. Mocuta, N. Collaert, A. Thean, L. Smith, V. Moroz:
  "Band-to-Band Tunneling Off-State Leakage in Ge Fins and Nanowires: Effect of Quantum Confinement";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 27 - 30.
  
  
• P. Eyben, P. Matagne, T. Chiarella, A. De Keersgieter, S. Kubicek, J. Mitard, A. Mocuta, N. Horiguchi, A. V.-Y. Thean, D. Mocuta:
  "Accurate prediction of device performance in sub-10nm WFIN FinFETs using scalpel SSRM-based calibration of process simulations.";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 287 - 290.
  
  
• M. Frey, J. Huang, F. Heinz, A. Erlebach, L. Smith, V. Moroz:
  "Performance Analysis of p-Type Silicon Nanowire FETs with Silicon-Germanium Cladding";
  Poster: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 273 - 276.
  
  
• F. Fuchs, A. Zienert, S. Mothes, M. Claus, S. Gemming, J. Schuster:
  "Comparison of Atomistic Quantum Transport and Numerical Device Simulation for Carbon Nanotube Field-effect Transistors";
  Poster: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 261 - 264.
  
  
• T. Fühner, P. Michalak, X. Wu, A. Erdmann:
  "Automated source/mask/directed self-assembly optimization using a self-adaptive hierarchical modeling approach";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 133 - 136.
  
  
• C. Funck, S. Hoffmann-Eifert, R. Waser, S. Menzel:
  "Simulation of threshold switching based on an electric field induced thermal runaway";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 319 - 322.
  
  
• G. Gaddemane, W.G. Vandenberghe, M.V. Fischetti:
  "Theoretical study of electron transport in silicene and germanene using full-band Monte Carlo simulations";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 353 - 356.
  
  
• R.K. Ghosh, S. Datta:
  "Orbitronics - Harnessing Metal Insulator Phase Transition in 1T-MoSe₂";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 93 - 96.
  
  
• Y. Hirano, H. Kikuchihara, T. Iizuka, M. Miura-Mattausch, H.J. Mattausch, A. Itoh:
  "Compact Modeling of Power Devices Embedded in Advanced Low-Power CMOS Circuits";
  Poster: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 209 - 212.
  
  
• S.-M. Hong, S. Cha:
  "Deterministic Boltzmann Equation Solver for Graphene Sheets Including Self-Heating Effects";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 197 - 200.
  
  
• S.-H. Hsieh, J.-C. Hung, M.-J. Chen:
  "A New Microscopic Formalism for the Electron Scattering by Remote "Paired" Dipol es in HKMG MOSFETs";
  Poster: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 201 - 204.
  
  
• Y. Huang, G. Wachutka:
  "Comparative Study of Contact Topographies of 4.5kV SiC MPS Diodes for Optimizing the Forward Characteristics";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 117 - 120.
  
  
• N. Ito, T. Misawa, Y. Awano:
  "Advanced Quasi Self-consistent Monte Carlo Simulations of Electrical and Thermal Properties of Nanometer-scale Gallium Nitride HEMT s Considering Local Phonon Number Distribution";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 349 - 352.
  
  
• W.J. Jeong, J. Seo, M. Shin:
  "Efficient TB-NEGF Simulations of Ultra-Thin Body Tunnel FETs";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 81 - 84.
  
  
• S. Jin, A.-T. Pham, W. Choi, M.A. Pourghaderi, J. Kim, K.-H. Lee:
  "Performance Evaluation of FinFETs: from Multisubband BTE to DD Calibration";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 109 - 116.
  
  
• A. Juge, J. Franco, G. Gouget, P. Scheer, T. Poiroux:
  "Device Level Modeling Challenges for Circuit Design Methodology in Presence of Variability";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 7 - 14.
  
  
• Y. Kamakura, R. Fujita, K. Konaga, Y. Ueoka, N. Mori, T. Kotani:
  "Full Band Monte Carlo Simulation of Impact Ionization in Wide Bandgap Semiconductors Based on Ab Initio Calculation";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 47 - 52.
  
  
• H. Kamrani, D. Jabs, V. d´Alessandro, N. Rinaldi, C. Jungemann:
  "Physics-Based Hot-Carrier Degradation Model for SiGe HBTs";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 341 - 344.
  
  
• F.J. Klüpfel, A. Burenkov, J. Lorenz:
  "Simulation of Silicon-Dot-Based Single-Electron Memory Devices";
  Poster: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 237 - 240.
  
  
• T. Knezevic, T. Suligoj:
  "Examination of the InP/InGaAs Single-Photon Avalanche Diodes by Establishing a New TCAD-based Simulation Environment";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 57 - 60.
  
  
• M.E. Law:
  "20 years of SISPAD: Adolescence of TCAD and Further Perspective";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 1 - 6.
  
  
• S.-Y. Lee, R. Chen, A. Schmidt, I. Jang, D.S. Kim, C. Ahn, W. Choi, K.-H. Lee:
  "Atomistic Simulation Flow for Source-Drain Epitaxy and Contact Formation Processes of Advanced Logic Devices";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 101 - 104.
  
  
• P. Lenarczyk, M. Luisier:
  "Physical Modeling of Ferroelectric Field-Effect Transistors in the Negative Capacitance Regime";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 311 - 314.
  
  
• N.D. Lu, Z.W. Zong, P.X. Sun, L. Li, Q. Liu, H.B. Lv, S.B. Long, M. Liu:
  "Thermal effect and Compact model in three- dimensional (3D) RRAM arrays";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 161 - 164.
  
  
• M. Luisier, R. Rhyner, A. Szabo, A. Pedersen:
  "Atomistic Simulation of Nanodevices";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 281 - 286.
  
  
• T. Ma, V. Moroz, R. Borges, K. El Sayed, P. Asenov, A. Asenov:
  "Future Perspectives of TCAD in the Industry";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 335 - 340.
  
  
• A. Majorana, G. Mascali, V. Romano:
  "Deterministic Solutions of the Boltzmann Equation for Charge Transport in Graphene on Substrates";
  Poster: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 269 - 272.
  
  
• P. Manstetten, L. Filipovic, A. Hössinger, J. Weinbub, S. Selberherr:
  "Using One-Dimensional Radiosity to Model Neutral Flux in Convex High Aspect Ratio Structures";
  Poster: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 265 - 268.
  
  
• A. Marchewka, R. Waser, S. Menzel:
  "A 2D Axisymmetric Dynamic Drift-Diffusion Model for Numerical Simulation of Resistive Switching Phenomena in Metal Oxides";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 145 - 148.
  
  
• T. Markussen, K. Stokbro:
  "Metal-InGaAs contact resistance calculations from first principles";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 373 - 376.
  
  
• S. Martinie, J. Lacord, O. Rozeau, C. Navarro, S. Barraud, J-C. Barbe:
  "Reconfigurable FET SPICE model for design evaluation";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 165 - 168.
  
  
• C. Medina-Bailon, C. Sampedro, J.L. Padilla, F. Gamiz, A. Godoy, L. Donetti:
  "Multi-Subband Ensemble Monte Carlo Study of Band-to-Band Tunneling in Silicon-based TFETs";
  Poster: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 253 - 256.
  
  
• U. Monga, J. Choi, J. Jeon, U. Kwon, K.-H. Lee, S. Choo, T. Uemura, S. Lee, S. Pae:
  "Charge-collection Modeling for SER Simulation in FinFETs";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 295 - 298.
  
  
• Y. Nakamura, M. Shintani, K. Oishi, S. Takashi, T. Hikihara:
  "A Simulation Model for SiC Power MOSFET Based on Surface Potential";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 121 - 124.
  
  
• S.R. Nandakumar, B. Rajendran:
  "Verilog-A Compact Model for a Novel Cu/SiO₂/W Quantum Memristor";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 169 - 172.
  
  
• M. Noei, C. Jungemann:
  "Numerical Investigation of Junctionless Nanowire Transistors Using A Boltzmann/Schrödinger/Poisson Full Newton-Raphson Solver";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 15 - 18.
  
  
• T. Onanuga, A. Erdmann:
  "3D simulation of light exposure and resist effects in laser direct write lithography";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 129 - 132.
  
  
• A. Oshima, T. Komawaki, K. Kobayashi, R. Kishida, P. Weckx, B. Kaczer, T. Matsumoto, H. Onodera:
  "Physical-Based RTN Modeling of Ring Oscillators in 40-nm SiON and 28-nm HKMG by Bimodal Defect-Centric Behaviors";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 327 - 330.
  
  
• A. Pacheco-Sanchez, D. Loroch, S. Mothes, M. Schröter, M. Claus:
  "Carbon nanotube field-effect transistor performance in the scope of the 2026 ITRS requirements";
  Poster: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 277 - 280.
  
  
• M.L.N. Palsgaard, A. Crovetto, T. Gunst, T. Markussen, O. Hansen, K. Stokbro, M. Brandbyge:
  "Semiconductor band alignment from first principles: a new nonequilibrium Green´s function method applied to the CZTSe/CdS interface for photovoltaics.";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 377 - 380.
  
  
• A. Payet, B. Sklénard, J.-C. Barbé, P. Batude, C. Licitra, A.-M. Papon, J.-M. Hartmann, R. Gonella, P. Gergaud, I. Martin-Bragado:
  "Atomistic predictions of substrate orientation impact during SiGe alloys Solid Phase Epitaxial Regrowth";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 31 - 34.
  
  
• A.-T. Pham, Z. Jiang, S. Jin, J. Wang, W. Choi, M.A. Pourghaderi, J. Kim, K.-H. Lee:
  "On The Efficient Methods To Solve Multi-Subband BTE in 1D Gas Systems: Decoupling Approximations Versus The Accurate Approach";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 189 - 192.
  
  
• E. Piccinini, R. Brunetti, M. Rudan, C. Jacoboni:
  "Electric Response of Ovonic Materials to Oscillating Potentials";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 323 - 326.
  
  
• P. Pichler:
  "Empirical Cluster Modeling Revisited";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 39 - 42.
  
  
• M. Ryzhii, V. Ryzhii, A. Satou, T. Otsuji, V. Mitin, M.S. Shur:
  "Models for Plasmonic THz Detectors Based on Graphene Split-Gate FETs with Lateral p-n Junctions";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 361 - 364.
  
  
• T. Sadi, E. Towie, M. Nedjalkov, C. Riddet, C. Alexander, L. Wang, V. Georgiev, A. Brown, C. Millar, A. Asenov:
  "One-Dimensional Multi-Subband Monte Carlo Simulation of Charge Transport in Si Nanowire Transistors";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 23 - 26.
  
  
• T. Sadi, L. Wang, D. Gao, A. Mehonic, L. Montesi, M. Buckwell, A. Kenyon:
  "Advanced Physical Modeling of SiOx Resistive Random Access Memories";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 149 - 152.
  
  
• S. Sant, H. Carrillo-Nunez, M. Luisier, A. Schenk:
  "Transfer Matrix Based Semiclassical Model for Field-induced and Geometrical Quantum Confinement in Tunnel FETs";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 77 - 80.
  
  
• I. Santos, M. Aboy, L.A. Marques, P. Lopez, M. Ruiz, L. Pelaz, A.M. Hernández-Díaz, P. Castrillo:
  "Atomistic study of the anisotropic interaction between extended and point defects in crystalline silicon and its influence on Si self -interstitial diffusion";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 35 - 38.
  
  
• A. Sengupta:
  "Atomistic simulation of transport properties of non-graphitic armchair nanotubes and effect of Stone-Wales defects";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 97 - 100.
  
  
• N. Seoane, G. Indalecio, A. Garcia-Loureiro, K. Kalna:
  "Impact of cross-section of 10.4 nm gate length In_0.53Ga_0.47As FinFETs on metal grain variability";
  Poster: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 241 - 244.
  
  
• M. Shin, W.J. Jeong, J . Lee, J. Seo:
  "First Principles Based NEGF Simulations of Si Nanowire FETs";
  Poster: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 217 - 220.
  
  
• V. Simonka, A. Hössinger, J. Weinbub, S. Selberherr:
  "Three-Dimensional Growth Rate Modeling and Simulation of Silicon Carbide Thermal Oxidation";
  Poster: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 233 - 236.
  
  
• Z. Stanojevic, M. Karner, O. Baumgartner, HW. Karner, C. Kernstock, H. Demel, F. Mitterbauer:
  "Phase-Space Solution of the Subband Boltzmann Transport Equation for Nano-Scale TCAD";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 65 - 68.
  
  
• V. Sverdlov, A. Makarov, T. Windbacher, S. Selberherr:
  "Magnetic Field Dependent Tunneling Magnetoresistance through a Quantum Well between Ferromagnetic Contacts";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 315 - 318.
  
  
• C. Toechterle, F. Pfirsch, C. Sandow, G. Wachutka:
  "Influence of Quasi-3D Filament Geometry on the Latch-Up Threshold of High-Voltage Trench-IGBTs";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 177 - 180.
  
  
• A. Tone, Y. Miyaoku, M. Miura-Mattausch, U. Feldmann, H. Kikuchihara, H.J. Mattausch, D. Navarro:
  "Accurate IGBT Modeling under High-Injection Condition";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 181 - 184.
  
  
• D. Valencia, E. Wilson, P. Sarangapani, G.A. Valencia-Zapata, G. Klimeck, M. Povolotskyi, Z. Jiang:
  "Grain Boundary Resistance in Nanoscale Copper Interconnections";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 105 - 108.
  
  
• A. Valsaraj, L.F. Register, S.K. Banerjee:
  "Effect of Rotational Misalignment on Interlayer Coupling in a Graphene/hBN/Graphene van der Waal´s heterostructure";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 365 - 368.
  
  
• W.G. Vandenberghe, M.V. Fischetti:
  "Modeling Topological-Insulator Field-Effect Transistors using the Boltzmann Equation";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 73 - 76.
  
  
• S. Venica, M. Zanato, F. Driussi, P. Palestri, L. Selmi:
  "Modeling electrostatic doping and series resistance in Graphene-FETs";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 357 - 360.
  
  
• K. Vuttivorakulchai, M. Luisier, A. Schenk:
  "Modeling the Thermal Conductivity of Si Nanowires with Surface Roughness";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 19 - 22.
  
  
• K.-C. Wang, D. Valencia, J. Charles, Y. He, M. Povolotskyi, G. Klimeck, J. Maassen, M. Lundstrom, T. Kubis:
  "NEMO5: Predicting MoS₂ Heterojunctions";
  Poster: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 221 - 224.
  
  
• L. Wang, B. Cheng, P. Asenov, A. Pender, D. Reid, F. Adamu-Lema, C. Millar, A. Asenov:
  "TCAD Proven Compact Modelling Re-centering Technology for Early 0.x PDKs";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 157 - 160.
  
  
• X. Wang, D. Reid, L. Wang, C. Millar, A. Burenkov, P. Evanschitzky, E. Bär, J. Lorenz, A. Asenov:
  "Process Informed Accurate Compact Modelling of 14-nm FinFET Variability and Application to Statistical 6T-SRAM Simulations";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 303 - 306.
  
  
• H.Y. Wong, N. Braga, R.V. Mickevicius:
  "AlGaN/GaN Rake-Gate HFET: A Novel Normally-Off HFET based on Stress and Layout Engineering";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 61 - 64.
  
  
• X. Wu, X. Mou, L.F. Register, S.K. Banerjee:
  "Full-Band Simulations of Single-Particle Resonant Tunneling in Transition Metal Dichalcogenide-Based Interlayer Tunneling Field-Effect Transistors";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 89 - 92.
  
  
• Z. Zeng, F. Triozon, Y. Niquet:
  "Carrier scattering by workfunction fluctuations and interface dipoles in high-κ/metal gate stacks";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 369 - 372.
  
  
• Z. Zeng, F. Triozon, Y. Niquet, S. Barraud:
  "Size-dependent carrier mobilities in rectangular silicon nanowire devices";
  Poster: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 257 - 260.
  
  
• Y.D. Zhao, P. Huang, Z.H. Guo, Z.Y. Lun, B. Gao, X.Y. Liu, J.F. Kang:
  "Atomic Monte-Carlo Simulation for CBRAM with Various Filament Geometries";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 153 - 156.
  
  
• W. Zhou, C. Zimmermann, C. Jungemann:
  "Noise Simulation of Bipolar Organic Semiconductor Devices Based on the Master Equation";
  Talk: SISPAD, Nuremberg, Germany; 2016-09-06 - 2016-09-08; in: "Proc. of SISPAD", (2016), 331 - 334.