SISPAD 2015 Proceedings

• E. Abbaspour, S. Menzel, C. Jungemann:
  "The Role of the Interface Reactions in the Electroforming of Redox-based Resistive Switching Devices Using KMC Simulations";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 293 - 296.
  
  
• F. Adamu-Lema, X. Wang, S.M. Amoroso, L. Gerrer, C. Millar, A. Asenov:
  "Comprehensive 'Atomistic' Simulation of Statistical Variability and Reliability in 14 nm Generation FinFETs";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 157 - 160.
  
  
• S. Aghaei, P. Andrei, M. Hagmann:
  "Towards "atomistic" dopant profiling using SCM measurements";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 401 - 404.
  
  
• T. Albes, P. Lugli, A. Gagliardi:
  "Kinetic Monte Carlo Simulations to Investigate the Effects of Interfaces in Organic Photovoltaic Cells Including a Realistic Blend Morphology";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 450 - 453.
  
  
• C. Alper, M. Visciarelli, P. Palestri, J.L. Padilla, A. Gnudi, E. Gnani, A.M. Ionescu:
  "Modeling the Imaginary Branch in III-V Tunneling Devices: Effective Mass vs k · p";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 273 - 276.
  
  
• M.G. Ancona, J.B. Boos:
  "Diffusion-Drift Modeling of Carbon-Based Nanowire FETs";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 337 - 340.
  
  
• M.G. Ancona, K.D. Hobart, T.J. Anderson:
  "Coupled 2D/3D Transport: Analysis of Graphene-SiC Devices";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 161 - 164.
  
  
• A. Athmanathan, D. Krebs, A. Sebastian, M. Le Gallo, H. Pozidis, E. Eleftheriou:
  "A Finite-Element Thermoelectric model for Phase-Change Memory devices";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 289 - 292.
  
  
• A. Aziz, N. Shukla, S. Datta, S.K. Gupta:
  "Implication of Hysteretic Selector Device on the Biasing Scheme of a Cross-point Memory Array";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 425 - 428.
  
  
• M. Barangi, P. Mazumder:
  "Modeling of temperature dependency of magnetization in straintronics memory devices";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 262 - 265.
  
  
• O. Baumgartner, L. Filipovic, H. Kosina, M. Karner, Z. Stanojevic, H.W. Cheng-Karner:
  "Efficient Modeling of Source/Drain Tunneling in Ultra-Scaled Transistors";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 202 - 205.
  
  
• E.M. Bazizi, I. Chakarov, T. Herrmann, A. Zaka, L. Jiang, X. Wu, S.M. Pandey, F. Benistant, D. Reid, A. R. Brown, C. Alexander, C. Millar, A. Asenov:
  "Advanced TCAD Simulation of Local Mismatch in 14nm CMOS Technology FinFETs";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 341 - 344.
  
  
• E.M. Bazizi, I. Chakarov, A. Zaka, L. Jiang, X. Wu, S.M. Pandey, F. Benistant, D. Reid, A. R. Brown, C. Alexander, C. Millar, A. Asenov:
  "Impact of Backplane Configuration on the Statistical Variability in 22nm FDSOI CMOS";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 345 - 348.
  
  
• A. Blom, U.M. Pozzoni, T. Markussen, K. Stokbro:
  "First-Principles Simulations of Nanoscale Transistors";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 52 - 55.
  
  
• A. Burenkov, J. Lorenz, Y. Spiegel, F. Torregrosa:
  "Simulation of Plasma Immersion Ion Implantation into Silicon";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 218 - 221.
  
  
• F. Buscemi, E. Piccinini, R. Brunetti, M. Rudan:
  "Intrinsic and Extrinsic Stability of Ovonic-Switching Devices";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 429 - 432.
  
  
• M. Calderara, S. Brück, M. Luisier:
  "SplitSolve: a Fast Solver for Wave Function Based Quantum Transport Simulations on Accelerators";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 16 - 19.
  
  
• H. Ceric, M. Rovitto:
  "Impact of Microstructure and Current Crowding on Electromigration: A TCAD Study";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 194 - 197.
  
  
• F.W. Chen, H. Ilatikhameneh, G. Klimeck, R. Rahman, T. Chu, Z. Chen:
  "Achieving a higher performance in bilayer graphene FET-Strain Engineering";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 177 - 181.
  
  
• J. Chen:
  "Design Optimal Built-in Snubber in Trench Field Plate Power MOSFET for Superior EMI and Efficiency Performance";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 459 - 462.
  
  
• W.-S. Cho, K. Roy:
  "Leakage Reduction in Stacked Sub-10nm Double-Gate MOSFETs";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 349 - 352.
  
  
• M. Choi, V. Moroz, L. Smith, J. Huang:
  "Extending Drift-Diffusion Paradigm into the Era of FinFETs and Nanowires";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 242 - 245.
  
  
• S. Choi, Y.J. Park:
  "Numerical Simulation of Percolation Model for Time Dependent Dielectric Breakdown (TDDB) under Non-uniform Trap Distribution";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 405 - 408.
  
  
• A. Chvala, D. Donoval, M. Molnar, J. Marek, P. Pribytny:
  "Advanced Methodology for Fast 3-D TCAD Electrothermal Simulation of Power HEMTs Including Package";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 116 - 119.
  
  
• S. Colasanti, V.D. Bhatt, A. Abdelhalim, A. Abdellah, P. Lugli:
  "A 3D Self-Consistent Percolative Model for AC-DC Electrical Analysis of Carbon Nanotubes Networks";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 100 - 103.
  
  
• D.M. Crum, A. Valsaraj, B. Sahu, Z. Krivakopic:
  "Impact of Gate Oxide Complex Band Structure on n-Channel III-V FinFETs";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 250 - 253.
  
  
• O. Cueto, V. Sousa, G. Navarro, S. Blonkowski:
  "Coupling the Phase-Field Method with an Electrothermal Solver to Simulate Phase Change Mechanisms in PCRAM Cells";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 301 - 304.
  
  
• C. Darmody, D. Ettisserry, N. Goldsman, N.K. Dhar:
  "Using Density Functional Theory to Engineer Direct Gap Germanium-Tin Alloy";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 329 - 332.
  
  
• A. Davoody, A.J. Gabourie, I. Knezevic:
  "Simulation of Resonance Energy Transfer in Carbon Nanotube Composites for Photovoltaic Applications";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 96 - 99.
  
  
• H. Demel, Z. Stanojevic, M. Karner, G. Rzepa, T. Grasser:
  "Expanding TCAD Simulations from Grid to Cloud";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 186 - 189.
  
  
• S. Deshmukh, R. Islam, C. Chen, E. Yalon, K.C. Saraswat, E. Pop:
  "Thermal Modeling of Metal Oxides for Highly Scaled Nanoscale RRAM";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 281 - 284.
  
  
• Z. Dilli, A. Akturk, N. Goldsman, S. Potbhare:
  "An Enhanced Specialized SiC Power MOSFET Simulation System";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 463 - 466.
  
  
• T. Dinh, A. Vohra, J. Melai, T. Vanhoucke, P. Magnee, D. Klaassen:
  "RF Technology Optimization by a Fast Method for Linearity Determination";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 182 - 185.
  
  
• L. Donetti, C. Sampedro, F. Gamiz, A. Godoy, F.J. Garcia-Ruiz, E. Towie, V. P. Georgiev, S.M. Amoroso, C. Riddet, A. Asenov:
  "Multi-Subband Ensemble Monte Carlo Simulation of Si Nanowire MOSFETs";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 353 - 356.
  
  
• R.M. Elder, M. Neupane, T.L. Chantawansri:
  "Mechanical properties of homogeneous and heterogeneous layered 2D materials";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 471 - 473.
  
  
• P. Ellinghaus, M. Nedjalkov, S. Selberherr:
  "Improved Drive-Current into Nanoscaled Channels using Electrostatic Lenses";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 24 - 27.
  
  
• D. Ettisserry, N. Goldsman, A. Akturk, A. Lelis:
  "Modeling of Oxygen-Vacancy Hole Trap Activation in 4H-SiC MOSFETs using Density Functional Theory and Rate Equation Analysis";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 48 - 51.
  
  
• J. Fang, W.G. Vandenberghe, M.V. Fischetti:
  "Transistors performance in the sub-1 nm technology node based on one-dimensional nanomaterials";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 84 - 87.
  
  
• P. Feng, J. Kim, J. Cho, S.M. Pandey, S. Narayanan, M. Tng, B. Liu, E. Banghart, B. Zhu, P. Zhao, M. Rahman, Y. Park, L. Jiang, F. Benistant:
  "Contact Model Based on TCAD-Experimental Interactive Algorithm";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 238 - 241.
  
  
• K. Fukuda, H. Asai, J. Hattori, H. Koshimoto, T. Ikegami:
  "A Moving Mesh Method for Device Simulation";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 409 - 412.
  
  
• A. Gendron-Hansen, K. Korablev, I. Chakarov, J. Egley, J. Cho, F. Benistant:
  "TCAD Analysis of FinFET Stress Engineering for CMOS Technology Scaling";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 417 - 420.
  
  
• V. P. Georgiev, S.M. Amoroso, L. Gerrer, F. Adamu-Lema, A. Asenov:
  "Interplay between quantum mechanical effects and a discrete trap position in ultrascaled FinFETs";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 246 - 249.
  
  
• J. Ghosh, D. Osintsev, V. Sverdlov, S. Selberherr:
  "Injection Direction Sensitive Spin Lifetime Model in a Strained Thin Silicon Film";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 277 - 280.
  
  
• R.K. Ghosh, J.A. Robinson, Y.-C. Lin, S. Datta:
  "Heterojunction Resonant Tunneling Diode at the Atomic Limit";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 266 - 269.
  
  
• T. Gunst, M. Brandbyge, T. Markussen, K. Stokbro:
  "Mobility and bulk electron-phonon interaction in two-dimensional materials";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 32 - 35.
  
  
• C.-H. Huang, Y. Li:
  "Electrical Characteristic of InGaAs Multiple-Gate MOSFET Devices";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 357 - 360.
  
  
• R. Hussin, L. Gerrer, J. Ding, S.M. Amaroso, L. Wang, M. Semicic, P. Weckx, J. Franco, A. Vanderheyden, D. Vanhaeren, N. Horiguchi, B. Kaczer, A. Asenov:
  "Reliability aware Simulation Flow: From TCAD Calibration to Circuit Level Analysis";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 152 - 155.
  
  
• A. Idrissi-El Oudrhiri, S. Martinie, J.-C. Barbé, O. Rozeau, C. Le Royer, M.-A. Jaud, J. Lacord, N. Bernier, L. Grenouillet, P. Rivallin, J. Pelloux-Prayer, M. Casse, M. Mouis:
  "Mechanical Simulation of Stress Engineering Solutions in Highly Strained p-type FDSOI MOSFETs for 14-nm Node and beyond";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 206 - 209.
  
  
• H. Ilatikhameneh, R. Rahman, J. Appenzeller, G. Klimeck:
  "Electrically Doped WTe₂ Tunnel Transistors";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 270 - 272.
  
  
• H. Kamrani, T. Kochubey, D. Jabs, C. Jungemann:
  "Electrothermal Simulation of SiGe HBTs and Investigation of Experimental Extraction Methods for Junction Temperature";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 108 - 111.
  
  
• Z. Kargar, D. Ruic, C. Jungemann:
  "A Self-Consistent Solution of the Poisson, Schrödinger and Boltzmann Equations for GaAs Devices by a Deterministic Solver";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 361 - 364.
  
  
• M. Karner, Z. Stanojevic, C. Kernstock, H.W. Cheng-Karner, O. Baumgartner:
  "Hierarchical TCAD Device Simulation of FinFETs";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 258 - 261.
  
  
• T. Kato, H. Matsuyama:
  "Impact of Deep P-Well Structure on Single Event Latchup in Bulk CMOS";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 365 - 368.
  
  
• C. Kernstock, Z. Stanojevic, O. Baumgartner, M. Karner:
  "Layout-Based TCAD Device Model Generation";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 198 - 201.
  
  
• J. Kim, B. Lee, Y. Park, K. V.R.M. Murali, F. Benistant:
  "ab-initio study on Schottky-barrier modulation in NiSi₂/Si interface";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 226 - 229.
  
  
• J. Kim, P.J. Oldiges, H.-f. Li, H. Niimi, M. Raymond, P. Zeitzoff, V. Kamineni, P. Adusumilli, C. Niu, F. Chafik:
  "Specific contact resistivity of n-type Si and Ge M-S and M-I-S contacts";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 234 - 237.
  
  
• P. Kivisaari, T. Sadi, J. Li, V. Georgiev, J. Oksanen, P. Rinke, J. Tulkki:
  "Bipolar Monte Carlo Simulation of Hot Carriers in III-N LEDs";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 393 - 396.
  
  
• A. Kommini, Z. Aksamija:
  "Tuneable enhancement of the thermoelectric Seebeck coefficient in externally gated semiconductor nanomembranes";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 454.
  
  
• P. Kumar, A.E. Rosenbluth, B. Srinivasan, R. Viswanathan, N. Mohapatra:
  "Lithography Process Model Building Using Locally Linear Embedding";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 413 - 416.
  
  
• H. Kwon, Y. Lee, S. Kim, M. Seung, C. Lee, S. Lee, S. Hong:
  "Transient 3-D TCAD Simulation of Multiple Snapback Event in Mixed-Mode Test for Mutual Relation between Protection Devices";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 467 - 470.
  
  
• C. Lee, H.-C. Kang, J.G. Min, J. Kim, U. Kwon, K.-H. Lee, Y. Park:
  "Layout-induced stress effects on the performance and variation of FinFETs";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 369 - 372.
  
  
• K.-H. Lee:
  "Challenges and Responses for Virtual Silicon";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 80 - 83.
  
  
• W. Li, S. Dong, H. Wang, J. Zhang, Y. Wang, Z. Yu:
  "Computational Study of Graphene FETs (GFETs) as Room-Temperature Terahertz Emitter";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 173 - 176.
  
  
• Y. Li, Z. Lun, P. Huang, Y. Wang, H. Jiang, G. Du, X. Liu:
  "3D KMC Reliability Simulation of Nano-Scaled HKMG nMOSFETs with Multiple Traps Coupling";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 148 - 151.
  
  
• N.D. Lu, P.X. Sun, L. Li, M. Liu, Y.T. Li, S. Liu:
  "Simulation of thermal crosstalk of resistive switching memory in three-dimensional crossbar structure";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 438 - 441.
  
  
• L. Lucci, J.-C. Barbé, M. Pala:
  "Full-Quantum Study of AlGaN/GaN HEMTs with InAlN Back-Barrier";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 128 - 131.
  
  
• M. Lundstrom:
  "Drift-Diffusion and computational electronics - Still going strong after 40 years!";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 1 - 3.
  
  
• T.K. Maiti, L. Chen, H. Miyamoto, M. Miura-Mattausch, H.J. Mattausch:
  "Modeling of Electrostatically Actuated Fluid Flow System for Mixed-Domain Simulation";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 190 - 193.
  
  
• A. Marchewka, R. Waser, S. Menzel:
  "Physical Simulation of Dynamic Resistive Switching in Metal Oxides Using a Schottky Contact Barrier Model";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 297 - 300.
  
  
• S. Markov, Y. Kwok, G. Chen, G. Penazzi, B. Aradi, T. Frauenheim:
  "Atomic Level Simulation of Permittivity of Oxidized Ultra-thin Si Channels";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 40 - 43.
  
  
• S. Martinie, O. Rozeau, C. Le Royer, J. Lacord, M.-A. Jaud, T. Poiroux, G. Le Carval, J-C. Barbe:
  "A physics-based compact model for Fully-Depleted Tunnel Field Effect Transistor";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 313 - 316.
  
  
• B. Mathieu, C. Fenouillet-Beranger, S. Kerdiles, J.-C. Barbé:
  "Thermal Simulation of Nanosecond Laser Annealing of 3D Sequential VLSI";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 104 - 107.
  
  
• C. Medina-Bailon, C. Sampedro, F. Gamiz, A. Godoy, L. Donetti:
  "Impact of S/D Tunneling in Ultrascaled Devices, a Multi-Subband Ensemble Monte Carlo Study";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 214 - 217.
  
  
• K. Moors, B. Soree, W. Magnus:
  "Modeling and tackling resistivity scaling in metal nanowires";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 222 - 225.
  
  
• V. Moroz, X.-W. Lin, L. Smith, J. Huang, M. Choi, T. Ma, J. Liu, Y. Zhang, J. Kawa, Y. Saad:
  "Power-Performance-Area Engineering of 5nm Nanowire Library Cells";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 433 - 436.
  
  
• S. Mothes, M. Claus, M. Schroter:
  "Toward RF-linearity for planar local back- and top-gate SB-CNTFETs";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 92 - 95.
  
  
• M. Moussavou, N. Cavassilas, E. Dib, M. Bescond:
  "Influence of mechanical strain in Si and Ge p-type double gate MOSFETs";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 373 - 376.
  
  
• G. Mugny, D. Rideau, F. Triozon, Y. Niquet, C. Kriso, F.G. Pereira, D. Garetto, C. Tavernier, C. Delerue:
  "Full-zone k * p parametrization for III-As materials";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 28 - 31.
  
  
• D. Nagy, M.A. Elmessary, M. Aldegunde, J. Lindberg, A. Garcia-Loureiro, K. Kalna:
  "Multi-Subband Interface Roughness Scattering using 3D Finite Element Monte Carlo with 2D Schödinger Equation for Simulations of sub-16nm FinFETs";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 377 - 380.
  
  
• S. Nazemi, E. Asl Soleimani, M. Pourfath, H. Kosina:
  "The Role of Surface Termination Geometry on the Ground-State and Optical Properties of Silicon Nano-Crystals: A Density Functional Theory Study";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 333 - 336.
  
  
• T.T.T. Nghiem, J. Saint-Martin, P. Dollfus:
  "Electrothermal simulation of ultra-scale MOSEFT";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 120 - 123.
  
  
• V. H. Nguyen, J. Saint-Martin, P. Dollfus, M.C. Nguyen, H.V. Nguyen:
  "High thermoelectric figure of merit in devices made of vertically stacked graphene layers";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 169 - 172.
  
  
• B. Novakovic, G. Klimeck:
  "Atomistic quantum transport approach to time-resolved device simulations";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 8 - 11.
  
  
• Y. Okada, Y. Tanimoto, T. Mizoguchi, H. Zenitani, H. Kikuchihara, H.J. Mattausch, M. Miura-Mattausch:
  "Compact Modeling of GaN HEMT Based on Device- Internal Potential Distribution";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 305 - 308.
  
  
• V. Ostwal, B. Rajendran, U. Ganguly:
  "A Circuit Model for a Si-based Biomimetic Synaptic Time-keeping Device";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 321 - 324.
  
  
• S. Papaleo, W. Zisser, H. Ceric:
  "Factors that Influence Delamination at the Bottom of Open TSVs";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 421 - 424.
  
  
• H.-H. Park, C. Ahn, W. Choi, K.-H. Lee, Y. Park:
  "Multiscale strain simulation for semiconductor devices base on the valence force field and the finite element methods";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 12 - 15.
  
  
• A. Philippou, M. Bina, F.-J. Niedernostheide:
  "Automated Vertical Design Optimization of a 1200V IGBT";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 72 - 75.
  
  
• P. Pribytny, M. Molnar, A. Chvala, J. Marek, M. Mikolásek, D. Donoval:
  "TCAD Simulation Methodology for 3-D Advanced Electro-Physical and Optical Analysis";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 455 - 458.
  
  
• S. Rakheja:
  "Engineering Plasmons in Graphene Nanostructures in THz Frequencies: Compact Modeling and Performance Analysis for On-chip Interconnects";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 165 - 168.
  
  
• S. Rhee, S. Choi, Y. Park:
  "Critical Distance Method for Predicting the Tail Part of the Threshold Voltage Distribution";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 381 - 384.
  
  
• D. Ruic, C. Jungemann:
  "Small Signal and Microscopic Noise Simulation of an nMOSFET by a Self-Consistent, Semi-Classical and Deterministic Approach";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 20 - 23.
  
  
• M. Ryu, F. Bien, Y. Kim:
  "Sandwiched-Gate Inverter: Novel Device Structure for Future Logic Gates";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 442 - 445.
  
  
• G. Rzepa, M. Waltl, W. Gös, B. Kaczer, T. Grasser:
  "Microscopic Oxide Defects Causing BTI, RTN, and SILC on High-K FinFETs";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 144 - 147.
  
  
• T. Sadi, L. Wang, L. Gerrer, A. Asenov:
  "Physical Simulation of Si-Based Resistive Random- Access Memory Devices";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 385 - 388.
  
  
• A. Sakai, K. Eikyu, K. Sonoda, K. Hisada, K. Arai, Y. Yamamoto, M. Tanizawa, Y. Yamaguchi:
  "Impacts of the 4H-SiC/SiO2 Interface States on the Switching Operation of Power MOSFETs";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 64 - 67.
  
  
• P. Sharma, M. Jech, S. Tyaginov, F. Rudolf, K. Rupp, H. Enichlmair, J. Park, T. Grasser:
  "Modeling of Hot-Carrier Degradation in LDMOS Devices Using a Drift-Diffusion Based Approach";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 60 - 63.
  
  
• Q. Shi, H. Guo, F. Liu:
  "Dielectric Material for Monolayer Black Phosphorus Transistors: A First-Principles Investigation";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 56 - 59.
  
  
• L. Smith, M. Choi, M. Frey, V. Moroz, A. Ziegler, M. Luisier:
  "FinFET to Nanowire Transition at 5nm Design Rules";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 254 - 257.
  
  
• K. Suzuki, M. Ohnishi, H. Miura:
  "Change in Electronic Properties of Carbon Nanotubes Caused by Local Distortion under Axial Compressive Strain";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 88 - 91.
  
  
• Y. Takeuchi, T. Kunikiyo, T. Kamino, M. Kimura, M. Tanizawa, Y. Yamaguchi:
  "Investigation of leakage current in pinned photodiode CMOS imager pixel with negative transfer-gate bias operation";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 76 - 79.
  
  
• C. Tavernier, F.G. Pereira, O. Nier, D. Rideau, F. Monsieur, G. Torrente, M. Haond, H. Jaouen, O. Noblanc, Y.M. Niquet:
  "TCAD modeling challenges for 14nm FullyDepleted SOI technology performance assessment";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 4 - 7.
  
  
• Y.-C. Tsai, M. Lee, Y. Li, S. Samukawa:
  "Numerical Simulation of Highly Periodical Ge/Si Quantum Dot Array for Intermediate-Band Solar Cell Applications";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 68 - 71.
  
  
• D. Vaidya, A. Hegde, S. Lodha, S. Ganguly, A. Nainani, N. Yoshida, T. Guarini:
  "Integrated Modeling Platform for High-k/Alternate Channel Material Heterostructure Stacks";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 389 - 392.
  
  
• A. Valsaraj, L.F. Register, S.K. Banerjee, J. Chang:
  "Substitutional Doping of Metal Contact for Monolayer Transition Metal Dichalcogenides: a Density Functional Theory Based Study";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 230 - 233.
  
  
• J. Wang, G. Du, X. Liu:
  "Monte Carlo Investigation of Silicon MOSFET for Terahertz Detection";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 210 - 213.
  
  
• J. Wang, N. Xu, W. Choi, K.-H. Lee, Y. Park:
  "A Generic Approach for Capturing Process Variations in Lookup-Table-Based FET Models";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 309 - 312.
  
  
• L. Wang, A. R. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov:
  "3D Electro-Thermal Simulations of Bulk FinFETs with Statistical Variations";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 112 - 115.
  
  
• W. Wang, L. Li, Z. Ji, N. Lu, C. Lu, G. Xu, M. Liu:
  "Monte Carlo Simulation of the Dynamic Charge Hopping Transport in Organic Thin Film Transistors";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 132 - 135.
  
  
• X. Wang, D. Reid, L. Wang, A. Burenkov, C. Millar, J. Lorenz, A. Asenov:
  "Hierarchical Variability-Aware Compact Models of 20nm Bulk CMOS";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 325 - 328.
  
  
• Y. Wimmer, W. Gös, A.-M. El-Sayed, A.L. Shluger, T. Grasser:
  "A Density-Functional Study of Defect Volatility in Amorphous Silicon Dioxide";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 44 - 47.
  
  
• T. Windbacher, A. Makarov, V. Sverdlov, S. Selberherr:
  "Improving the Performance of a Non-Volatile Magnetic Flip Flop by Exploiting the Spin Hall Effect";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 446 - 449.
  
  
• P. Wu, J. Zhang, L. Zhang, Z. Yu:
  "Channel-Potential Based Compact Model of Double-Gate Tunneling FETs Considering Channel-Length Scaling";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 317 - 320.
  
  
• X. Wu, X. Mou, L.F. Register, K. Banerjee:
  "Theoretical Study of the Spontaneous Electron-Hole Exciton Condensates between n and p-type MoS₂ Monolayers, toward beyond CMOS Applications";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 124 - 127.
  
  
• Z. Xiao, N. Goldsman, N.K. Dhar:
  "Simulation of Indirect-Direct Transformation Phenomenon of Germanium under Uniaxial and Biaxial Strain along Arbitrary Orientations";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 397 - 400.
  
  
• K. Xiu:
  "Application of Pauli Master Equation to Nanoscale Silicon FinFET Transport under Uniaxial Stress: a Direct Solution Approach";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 437.
  
  
• G. Xu, W. Wang, L. Wang, Z. Ji, L. Li, M. Liu:
  "Origin of Mobility Degeneration at High Gate Bias in Organic Thin Film Transistors Based on Carriers´ Freeze to Surface Charges";
  Poster: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 140 - 143.
  
  
• Y.D. Zhao, P. Huang, Z. Chen, C. Liu, H.T. Li, W.J. Ma, B. Gao, X. Liu, J.F. Kang:
  "Simulation of TaO_X-RRAM with Ta₂O_5-X/TaO_2-X Stack Engineering";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 285 - 288.
  
  
• W. Zhou, C. Zimmermann, C. Jungemann:
  "Simulation of Bipolar Organic Semiconductor Devices based on the Master Equation including Generation and Recombination";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 136 - 139.
  
  
• A. Ziegler, M. Frey, L. Smith, M. Luisier:
  "A computationally efficient non-parabolic bandstructure model for quantum transport simulations";
  Talk: SISPAD, Washington DC, USA; 2015-09-09 - 2015-09-11; in: "Proc. of SISPAD", (2015), 36 - 39.