SISPAD 2014 Proceedings

• F. Adamu-Lema, S.M. Amoroso, X. Wang, B. Cheng, L. Shifren, R. Aitken, S. Sinha, G. Yeric, A. Asenov:
  "The Discrepancy Between the Uniform and Variability Aware Atomistic TCAD Simulations of Decananometer Bulk MOSFETs and FinFETs";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 285 - 288.
  
  
• I. Adisusilo, K. Kukita, Y. Kamakura:
  "Analysis of Heat Conduction Property in FinFETs Using Phonon Monte Carlo Simulation";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 17 - 20.
  
  
• A. Akturk, N. Goldsman, S. Potbhare:
  "Electro-Thermal Simulation of Silicon Carbide Power Modules";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 237 - 240.
  
  
• M. Aldegunde, K. Kalna:
  "Self-Forces in 3D Finite Element Monte Carlo Simulations of a 10.7 nm Gate Length SOI FinFET";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 185 - 188.
  
  
• M.G. Ancona:
  "Nonlinear Thermoelectroelastic Simulation of III-N Devices";
  Talk: Conference, Yokohama, Japan (invited); 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 121 - 124.
  
  
• A. Asenov, S.M. Amoroso, L. Gerrer:
  "Progress in the Simulation of Time Dependent Statistical Variability in Nano CMOS Transistors";
  Talk: Conference, Yokohama, Japan (invited); 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 273 - 276.
  
  
• K. Auluck, E.C. Kan, S.R. Rajwade:
  "A Unified Circuit Model for Ferroelectrics";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 149 - 152.
  
  
• O. Baumgartner, Z. Stanojevic, L. Filipovic, A. Grill, T. Grasser, H. Kosina:
  "Investigation of Quantum Transport in Nanoscaled GaN High Electron Mobility Transistors";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 117 - 120.
  
  
• E.M. Bazizi, A. Zaka, T. Hermann, F. Benistant, J.H.M. Tin, J.P. Goh, L. Jiang, M. Joshi, H. Van Meer, K. Korablev:
  "USJ Engineering Impacts on FinFETs and RDF Investigation using Full 3D Process/Device Simulation";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 25 - 28.
  
  
• M. Bellini, J. Vobecky:
  "Large-Scale 3D TCAD Study of the Impact of Shorts in Phase Controlled Thyristors";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 265 - 268.
  
  
• A. Benvenuti, A. Ghetti, A. Mauri, H. Liu, C. Mouli:
  "Current Status and Future Prospects of Non-Volatile Memory Modeling";
  Talk: Conference, Yokohama, Japan (invited); 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 5 - 8.
  
  
• F. Buscemi, E. Piccinini, R. Brunetti, M. Rudan:
  "High-Order Solution Scheme for Transport in Low-D Devices";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 161 - 164.
  
  
• H. Carrillo-Nunez, M. Bescond, E. Dib, N. Cavassilas, M. Lannoo:
  "Single Dopant Nanowire Transistors: Influence of Phonon Scattering and Temperature";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 321 - 324.
  
  
• H. Ceric, W. Zisser, M. Rovitto, S. Selberherr:
  "Electromigration in Solder Bumps: A Mean-Time-to-Failure TCAD Study";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 221 - 224.
  
  
• S.N. Chinta, S. Mittal, P. Debashis, S. Ganguly:
  "A FinFET LER V_T Variability Estimation Scheme with 300× Efficiency Improvement";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 277 - 280.
  
  
• K. Choe, T. An, S. Kim:
  "Accurate Fringe Capacitance Model Considering RSD and Metal Contact for Realistic FinFETs and Circuit Performance Simulation";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 29 - 32.
  
  
• S. Choi, Y.J. Park:
  "Physical Modeling of Time Dependent Dielectric Breakdown (TDDB) of BEOL Oxide using Monte Carlo Particle Simulation";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 157 - 160.
  
  
• J.-P. Colinge:
  "Multigate Transistors: Pushing Moore's Law to the Limit";
  Talk: Conference, Yokohama, Japan (invited); 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 313 - 316.
  
  
• D.M. Crum, A. Valsaraj, L.F. Register, S.K. Banerjee:
  "Semi-Classical Ensemble Monte Carlo Simulator Using Innovative Quantum Corrections for Nano-Scale n-Channel FinFETs";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 109 - 112.
  
  
• O. Cueto, A. Payet, T. Cabout:
  "Development of an Electro-Thermal Resistive Switching Model Based on O-Frenkel Pairs to Study Reset and Set Mechanisms in HfO2-Based RRAM cells";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 45 - 48.
  
  
• P. Dorion, O. Cueto, M. Reyboz, J.C. Barbe, A. Grigoriu, Y. Maday:
  "Advanced Simulation of CBRAM Devices with the Level Set Method";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 33 - 36.
  
  
• P. Ellinghaus, M. Nedjalkov, S. Selberherr:
  "The Wigner Monte Carlo Method for Accurate Semiconductor Device Simulation";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 113 - 116.
  
  
• A. Endoh, I. Watanabe, A. Kasamatsu, T. Mimura:
  "Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Various Shape of Buried Gate";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 261 - 264.
  
  
• D. Ettisserry, N. Goldsman, A. Akturk, A. Lelis:
  "Effects of Carbon-Related Oxide Defects on the Reliability of 4H-SiC MOSFETs";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 61 - 64.
  
  
• L. Filipovic, O. Baumgartner, Z. Stanojevic, H. Kosina:
  "BTB Tunneling In InAs/Si Heterojunctions";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 245 - 248.
  
  
• L. Filipovic, F. Rudolf, E. Bär, P. Evanschitzky, J. Lorenz, F. Roger, A. Singulani, R. Minixhofer, S. Selberherr:
  "Three-Dimensional Simulation for the Reliability and Electrical Performance of Through-Silicon Vias";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 341 - 344.
  
  
• M.V. Fischetti, W.G. Vandenberghe, B. Fu, S. Narayanan, J. Kim, Z. Ong, A. Suarez-Negreira, C. Sachs:
  "Physics of Electronic Transport in Low-Dimensionality Materials for Future FETs";
  Talk: Conference, Yokohama, Japan (invited); 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 1 - 4.
  
  
• D. Fried, K. Greiner, D. Faken, M. Kamon, A. Pap, R. Patz, M. Stock, J. Lehto, S. Breit:
  "Predictive Modeling of Pattern-Dependent Etch Effects in Large-Area Fully-Integrated 3D Virtual Fabrication";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 209 - 212.
  
  
• K. Fukuda, M. Nishizawa, T. Tada, L. Bolotov, K. Suzuki, S. Sato, H. Arimoto, T. Kanayama:
  "Simulation of Light-Illuminated STM Measurements";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 129 - 132.
  
  
• Y. Furubayashi, M. Ogawa, S. Souma:
  "Numerical Simulation of Current Noise Caused by Potential Fluctuation in Nanowire FET with an Oxide Trap";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 201 - 204.
  
  
• L. Gerrer, S. Amoroso, R. Hussin, F. Adamu-Lema, A. Asenov:
  "3D Atomistic Simulations of Bulk, FDSOI and Fin FETs Sensitivity to Oxide Reliability";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 93 - 96.
  
  
• W. Gös, M. Waltl, Y. Wimmer, G. Rzepa, T. Grasser:
  "Advanced Modeling of Charge Trapping: RTN, 1/f noise, SILC, and BTI";
  Talk: Conference, Yokohama, Japan (invited); 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 77 - 80.
  
  
• S. Guarnay, F. Triozon, S. Martinie, Y. Niquet, A. Bournel:
  "Monte Carlo Study of Effective Mobility in Short Channel FDSOI MOSFETs";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 105 - 108.
  
  
• K. Hamada:
  "Challenge of Adopting TCAD in the Development of Power Semiconductor Devices for Automotive Applications";
  Talk: Conference, Yokohama, Japan (invited); 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 9 - 12.
  
  
• H. Hayashi, V. Axelrad, M. Mochizuki, T. Hayashi, T. Maruyama, K. Suzuki, Y. Nagatomo:
  "Optimization of Program and Erase Characteristics of Two Bit Flash Memory P-Channel Cell Structure using TCAD";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 169 - 172.
  
  
• Y. He, T. Kubis, M. Povolotskyi, J. Fonseca, G. Klimeck:
  "Quantum Transport in NEMO5: Algorithm Improvements and High Performance Implementation";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 361 - 364.
  
  
• W.-T. Huang, Y. Li:
  "The Impact of Fin/Sidewall/Gate Line Edge Roughness on Trapezoidal Bulk FinFET Devices";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 281 - 284.
  
  
• R. Ishida, S. Koba, H. Tsuchiya, Y. Kamakura, N. Mori, S. Uno, M. Ogawa:
  "Extraction of Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Based on Monte Carlo Method";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 153 - 156.
  
  
• D. Jabs, C. Jungemann:
  "Avalanche Breakdown of pn-junctions - Simulation by Spherical Harmonics Expansion of the Boltzmann Transport Equation";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 173 - 176.
  
  
• R. Jain, H. Rücker, N. Mohapatra:
  "Optimization of Si MOS Transistors for THz Detection using TCAD Simulation";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 213 - 216.
  
  
• Z. Jiang, S. Yu, Y. Wu, J.H. Engel, X. Guan, W. Wong:
  "Verilog-A Compact Model for Oxide-based Resistive Random Access Memory(RRAM)";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 41 - 44.
  
  
• H. Jung, W.J. Jeong, M. Shin:
  "A Study of Performance Enhancement in Uniaxial Stressed Silicon Nanowire Field Effect Transistors";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 189 - 192.
  
  
• C. Jungemann, C. Zimmermann:
  "DC, AC and Noise Simulation of Organic Semiconductor Devices based on the Master Equation";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 137 - 140.
  
  
• T. Kato, T. Uemura, H. Matsuyama:
  "High-Accuracy Estimation of Soft Error Rate using PHYSERD with Circuit Simulation";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 345 - 348.
  
  
• W.-K. Lee, K. Huang, J. Liang, J.-Y. Chen, C. Hsiao, K. Su, C.-K. Lin, M.-C. Jeng:
  "Unifying Self-Heating and Aging Simulations with TMI2";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 333 - 336.
  
  
• P. Lin, Z.-A. Lee, C.-W. Yao, H.-J. Lin, H. Watanabe:
  "Nano-Meter Scaled Gate Area High-K Dielectrics with Trap-Assisted Tunneling and Random Telegraph Noise";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 241 - 244.
  
  
• J. Lorenz, E. Bär, A. Burenkov, P. Evanschitzky, A. Asenov, L. Wang, X. Wang, A. R. Brown, C. Millar, D. Reid:
  "Simultaneous Simulation of Systematic and Stochastic Process Variations";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 289 - 292.
  
  
• Z. Lun, S. Liu, Y. He, Y. Hou, K. Zhao, G. Du, X. Liu, Y. Wang:
  "Investigation of Retention Behavior for 3D Charge Trapping NAND Flash Memory by 2D Self-Consistent Simulation";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 141 - 144.
  
  
• T.K. Maiti, T. Hayashi, L. Chen, M. Miura-Mattausch, H.J. Mattausch:
  "Organic Thin-Film Transistor Compact Model with Accurate Charge Carrier Mobility";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 133 - 136.
  
  
• S. Markov, C.Y. Yam, G. Chen, B. Aradi, G. Penazzi, T. Frauenheim:
  "Towards Atomic Level Simulation of Electron Devices Including the Semiconductor-Oxide Interface";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 65 - 68.
  
  
• G. Mil nikov, N. Mori:
  "Electron-Phonon Interaction in Si Nanowire Devices: Low Field Mobility and Self-Consistent EM NEGF Simulations";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 317 - 320.
  
  
• K. Mitsubayashi:
  "Novel Biosensing Devices for Medical Applications";
  Talk: Conference, Yokohama, Japan (invited); 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 349 - 352.
  
  
• M. Mochizuki, H. Tanaka, H. Hayashi:
  "Efficient and Universal Method to Design Multiple Field Limiting Rings for Power Devices";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 57 - 60.
  
  
• X. Mou, L.F. Register, S.K. Banerjee:
  "Interplay among Bilayer PseudoSpin Field-Effect Transistor (BiSFET) Performance, BiSFET Scaling and Condensate Strength";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 309 - 312.
  
  
• H. Mutoh:
  "Modelinig and Algorithms of Device Simulation for Ultra-High Speed Devices";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 225 - 228.
  
  
• M. Ohnishi, K. Suzuki, H. Miura:
  "Spatial Distribution of State Densities Dominating Strain Sensitivity of Carbon Nanotubes";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 165 - 168.
  
  
• Y. Oodate, Y. Tanimoto, H. Tanoue, H. Kikuchihara, H. Miyamoto, H.J. Mattausch, M. Miura-Mattausch:
  "Compact Modeling of Carrier Trapping for Accurate Prediction of Frequency Dependent Circuit Operation";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 329 - 332.
  
  
• Y. Ookura, N. Kato, S.-I. Kobayashi, T. Kuwabara, M. Harada, K. Yamaguchi, H. Koike:
  "A Three-Dimensional TCAD System Focused on Power and Nano-Scaled Devices Applications";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 197 - 200.
  
  
• D. Osintsev, V. Sverdlov, T. Windbacher, S. Selberherr:
  "Increasing Mobility and Spin Lifetime with Shear Strain in Thin Silicon Films";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 193 - 196.
  
  
• H.-H. Park, Y. Lu, W. Choi, Y.-T. Kim, K.-H. Lee, Y. Park:
  "Atomistic Simulations of Phonon- and Alloy-Scattering-Limited Mobility in SiGe nFinFETs";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 257 - 260.
  
  
• M.-C. Park, G.-Y. Yang, J.-S. Yang, K.-H. Lee, Y.-K. Park:
  "New Perspective on Lifetime Prediction Approach for BTI and HCI Stressed Device and Its Impact on Circuit Lifetime";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 337 - 340.
  
  
• O. Pirrotta, A. Padovani, L. Larcher, L. Zhao, B. Magyari-Koepe, Y. Nishi:
  "Multi-Scale Modeling of Oxygen Vacancies Assisted Charge Transport in Sub-Stoichiometric TiO_x For RRAM Application";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 37 - 40.
  
  
• F. Pittino, L. Selmi:
  "A Technique to Model the AC Response of Diffuse Layers at Electrode/Electrolyte Interfaces and to Efficiently Simulate Impedimetric Biosensor Arrays for many Analyte Configurations";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 353 - 356.
  
  
• D. Rideau, F. Monsieur, O. Nier, Y.M. Niquet, J. Lacord, V. Quenette, G. Mugny, G. Hiblot, G. Gouget, M. Quoirin, L. Silvestri, F. Nallet, C. Tavernier, H. Jaouen:
  "Experimental and Theoretical Investigation of the `Apparent´ Mobility Degradation in Bulk and UTBB-FDSOI Devices: A Focus on the Near-Spacer-Region Resistance.";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 101 - 104.
  
  
• F. Rudolf, J. Weinbub, K. Rupp, A. Morhammer, S. Selberherr:
  "Template-Based Mesh Generation Template-Based Mesh Generation";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 217 - 220.
  
  
• K. Rupp, M. Bina, Y. Wimmer, A. Jüngel, T. Grasser:
  "Cell-Centered Finite Volume Schemes for Semiconductor Device Simulation";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 365 - 368.
  
  
• H. Ryu, J. Kim, K.-H. Hong:
  "Channel-Size Dependent Dopant Placement in Silicon Nanowires";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 325 - 328.
  
  
• G. Rzepa, W. Gös, G. Rott, K. Rott, M. Karner, C. Kernstock, B. Kaczer, H. Reisinger, T. Grasser:
  "Physical Modeling of NBTI: From Individual Defects to Devices";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 81 - 84.
  
  
• C. Sampedro, L. Donetti, F. Gamiz, A. Godoy, F.J. Garcia-Ruiz, V. P. Georgiev, S.M. Amoroso, C. Riddet, E. Towie, A. Asenov:
  "3D Multi-Subband Ensemble Monte Carlo Simulator of FinFETs and Nanowire Transistors";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 21 - 24.
  
  
• C. Sandow, R. Baburske, F.-J. Niedernostheide, F. Pfirsch, C. Toechterle:
  "Exploring the Limits of the Safe Operation Area of Power Semiconductor Devices";
  Talk: Conference, Yokohama, Japan (invited); 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 49 - 52.
  
  
• S. Sant, Q.-T. Zhao, D. Buca, S. Mantl, A. Schenk:
  "Analysis of GeSn-SiGeSn Hetero-Tunnel FETs";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 125 - 128.
  
  
• N. Seoane, M. Aldegunde, K. Kalna, A. Garcia-Loureiro:
  "MC/DD Study of Metal Grain Induced Current Variability in a Nanoscale InGaAs FinFET";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 253 - 256.
  
  
• K. Shimonomura, V.T.S. Dao, T.G. Etoh, Y. Kamakura:
  "A Simulation Analysis of Backside-Illuminated Multi-Collection-Gate Image Sensor Employing Monte Carlo Method";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 205 - 208.
  
  
• G. Shine, S. Manipatruni, S. Chaudhry, K.C. Saraswat, D. Nikonov, I.A. Young:
  "Extended Hückel Theory for Quantum Transport in Magnetic Tunnel Junctions";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 301 - 304.
  
  
• Y. Shuto, S. Yamamoto, S. Sugahara:
  "0.5V Operation and Performance of Nonvolatile SRAM Cell based on Pseudo-Spin-FinFET Architecture";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 305 - 308.
  
  
• K. Sonoda, E. Tsukuda, M. Tanizawa, K. Ishikawa, Y. Yamaguchi:
  "An Analysis of the Effect of Hydrogen Incorporation on Electron Traps in Silicon Nitride";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 145 - 148.
  
  
• Z. Stanojevic, O. Baumgartner, M. Karner, L. Filipovic, C. Kernstock, H. Kosina:
  "On the Validity of Momentum Relaxation Time in Low-Dimensional Carrier Gases";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 181 - 184.
  
  
• M.A. Stettler:
  "Device and Process Modeling: 20 Years at Intel´s other Fab";
  Talk: Conference, Yokohama, Japan (invited); 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 13 - 16.
  
  
• A. Suzuki, T. Watanabe, T. Kamioka, Y. Kamakura:
  "Full-Scale Whole Device EMC/MD Simulation of Si Nanowire Transistor Including Source and Drain Regions by Utilizing Graphic Processing Units";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 357 - 360.
  
  
• A.N. Tallarico, P. Magnone, E. Sangiorgi, C. Fiegna:
  "Modeling Self-Heating Effects in AlGaN/GaN Electronic Devices during Static and Dynamic Operation Mode";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 233 - 236.
  
  
• T. Tanaka, K. Itoh:
  "Diameter Dependence of Scattering Limited Transport Properties of Si Nanowire MOSFETs under Uniaxial Tensile Strain";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 229 - 232.
  
  
• Y.T. Tung, E. Chen, T. Shen, Y. Okuno, C.-C. Wu, J. Wu, C.H. Diaz:
  "Atomic Ordering Effect on SiGe Electronic Structure";
  Talk: Conference, Yokohama, Japan; 2014-11-09 - 2014-11-11; in: "Proc. of SISPAD", (2014), 69 - 72.
  
  
• S. Tyaginov, M. Bina, J. Franco, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser:
  "A Predictive Physical Model for Hot-Carrier Degradation in Ultra-Scaled MOSFETs";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 89 - 92.
  
  
• A. Valsaraj, L.F. Register, S.K. Banerjee:
  "Density-Functional-Theory-Based Study of Monolayer MoS₂ on Oxide";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 73 - 76.
  
  
• H. Wang, W. Li, J. Zhang, Y. Wang, Z. Yu:
  "The Role of Electron Viscosity on Plasma-Wave Instability in HEMTs";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 177 - 180.
  
  
• L. Wang, A. R. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov:
  "3D Coupled Electro-Thermal FinFET Simulations Including the Fin Shape Dependence of the Thermal Conductivity";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 269 - 272.
  
  
• X. Wang, D. Reid, L. Wang, A. Burenkov, C. Millar, B. Cheng, A. Lange, J. Lorenz, E. Bär, A. Asenov:
  "Variability-Aware Compact Model Strategy for 20-nm Bulk MOSFETs";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 293 - 296.
  
  
• Y. Wang, P. Huang, X. Liu, G. Du, J. Kang:
  "Time Dependent 3-D Statistical KMC Simulation of High-k Degradation Including Trap Generation and Electron Capture/Emission Dynamic";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 85 - 88.
  
  
• T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
  "Influence of Device Geometry on the Non-Volatile Magnetic Flip Flop Characteristics";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 297 - 300.
  
  
• H.Y. Wong, N. Braga, R.V. Mickevicius, F. Gao, T. Palacios:
  "Study of AlGaN/GaN HEMT Degradation through TCAD Simulations";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 97 - 100.
  
  
• T. Yamamoto, T. Sawai, K. Mizutani, N. Otsuka, E. Fujii, N. Horikawa, Y. Kanzawa:
  "A Novel Duality-Based Modeling Methodology for Reverse Current-Voltage Characteristics of SiC";
  Talk: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 53 - 56.
  
  
• W. Zisser, H. Ceric, J. Weinbub, S. Selberherr:
  "Electromigration Induced Resistance Increase in Open TSVs";
  Poster: Conference, Yokohama, Japan; 2014-09-09 - 2014-09-11; in: "Proc. of SISPAD", (2014), 249 - 252.