SISPAD 2013

SISPAD 2013 Proceedings

H. Agarwal, S. Venugopalan, M. Chalkiadaki, N. Paydavosi, J. Duarte, S. Agnihotri, C. Yadav, P. Kushwaha, Y. Chauhan, C. Enz, A. Niknejad, C. Hu:
"Recent Enhancements in BSIM6 Bulk MOSFET Model";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 53 - 56.
C. Ahn, W. Choi, A. Schmidt, K. Lee, Y. Park, H. Kubotera, Y. Kayama, N. Cowern:
"Donor deactivation at high doping limit: donor pair and impurity band model";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 37 - 40.
N. Akhavan, G. Jolley, G. Umana-Membreno, J. Antoszewski, L. Faraone:
"Impurity scattering in p-type silicon nanowire FET: k.p approach";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 240 - 243.
A. Alam, K. Holland, S. Ahmed, D. Kienle, M. Vaidyanathan:
"A Modified Top-of-the-Barrier Model for Graphene and Its Application to Predict RF Linearity";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 155 - 158.
S.M. Amoroso, L. Gerrer, A. Asenov:
"3D TCAD Statistical Analysis of Transient Charging in BTI Degradation of Nanoscale MOSFETs";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 5 - 8.
S.M. Amoroso, L. Gerrer, J. Sellier, I. Dimov, M. Nedjalkov, S. Selberherr:
"Quantum Insights in Gate Oxide Charge-Trapping Dynamics in Nanoscale MOSFETs";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 25 - 28.
T. An, S. Kim:
"3-D Modeling of Fringing Gate Capacitance in Gate-all-around Cylindrical Silicon Nanowire MOSFETs";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 256 - 259.
P. Asenov, S. Roy, A. Asenov, D. Reid, C. Millar, D. New:
"Evaluating the Accuracy of SRAM Margin Simulation Through Large Scale Monte-Carlo Simulations with Accurate Compact Models";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 332 - 335.
O. Badami, D. Saha, S. Ganguly:
"Efficient Wigner Function Simulation for Nanowire MOSFETs and Comparison to Quantum Drift- Diffusion";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 272 - 275.
O. Baumgartner, M. Bina, W. Gös, M. Toledano-Luque, B. Kaczer, H. Kosina, T. Grasser:
"Direct Tunneling and Gate Current Fluctuations";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 17 - 20.
M. Bescond, E. Dib, C. Li, H. Mera, N. Cavassilas, F. Michelini, M. Lannoo:
"One-shot Current Conserving Approach of Phonon Scattering Treatment in Nano-transistors";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 412 - 415.
F.M. Bufler, F.O. Heinz, L. Smith:
"Efficient 3D Monte Carlo Simulation of Orientation and Stress Effects in FinFETs";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 172 - 175.
A. Cappelli, R. Brunetti, C. Jacoboni, E. Piccinini, F. Xiong, A. Behnam, E. Pop:
"3D-nHD: A HydroDynamic Model for Trap-Limited Conduction in a 3D Network";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 436 - 439.
H. Carrillo-Nunez, W. Magnus, W.G. Vandenberghe, B. Soree, F.M. Peeters:
"Impact of Band Non-parabolicity on the Onset Voltage in a Nanowire Tunnel Field-effect Transistor";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 93 - 96.
H. Ceric, A. Singulani, R.L. de Orio, S. Selberherr:
"Impact of Intermetallic Compound on Solder Bump Electromigration Reliability";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 73 - 76.
J. Chang, L.F. Register, S.K. Banerjee:
"Comparison of Ballistic Transport Characteristics of Monolayer Transition Metal Dichalcogenides (TMDs) MX₂ (M = Mo, W; X = S, Se, Te) n-MOSFETs";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 408 - 411.
K.-B. Chang, Y. Kim, J. Sue, H. Lee, W.-Y. Chung, K.-H. Lee, Y. Park, E. Jung, I. Chung:
"The Novel Stress Simulation Method for Contemporary DRAM Capacitor Arrays";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 424 - 427.
P. Chang, L. Zeng, X. Liu, K. Wei, J. Qin, K. Zhao, G. Du, X. Zhang:
"Calculation of the Valence Band Structure in Strained In_0.7Ga_0.3As Devices with Different Surface Orientation";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 388 - 391.
R. Chen, W. Choi, A. Schmidt, K.-H. Lee, Y. Park:
"A New Kinetic Lattice Monte Carlo Modeling Framework for the Source-Drain Selective Epitaxial Growth Process";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 9 - 12.
A. Chvala, D. Donoval, J. Marek, P. Pribytny, M. Molnar:
"Fast 3D Electro-Thermal Device/Circuit Simulation Based on Automated Interaction of SDevice and HSpice Simulators";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 224 - 227.
B. Cipriany, B. Jagannathan, G. Costrini, A. Noemaun, K. Onishi, S. Narasimha, N. Zhan, H. Nanjundappa, J. Norum, S. Furkay, R. Malik, P. Agnello, D. Fried, K. Greiner, D. Faken, S. Breit:
"22nm Technology Yield Optimization Using Multivariate 3D Virtual Fabrication";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 97 - 100.
M. Claus, S. Blawid, M. Schröter:
"Impact of near-contact barriers on the subthreshold slope of short-channel CNTFETs";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 159 - 162.
R. Coppeta, H. Ceric, B. Karunamurthy, T. Grasser:
"Epitaxial Volmer-Weber Growth Modelling";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 45 - 48.
R.L. de Orio, H. Ceric, S. Selberherr:
"Influence of Temperature on the Standard Deviation of Electromigration Lifetimes";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 232 - 235.
J. Ding, D. Reid, C. Millar, A. Asenov:
"An Accurate Compact Modelling Approach for Statistical Ageing and Reliability";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 57 - 60.
P. Dorion, O. Cueto, M. Reyboz, E. Vianello, J.C. Barbe, A. Grigoriu, Y. Maday:
"Simulation of CBRAM devices with the level set method";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 340 - 343.
J. Duarte, N. Paydavosi, S. Venugopalan, A. Sachid, C. Hu:
"Unified FinFET Compact Model: Modelling Trapezoidal Triple-Gate FinFETs";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 135 - 138.
D. Ettisserry, S. Salemi, N. Goldsman, S. Potbhare, A. Akturk, A. Lelis:
"Identification and quantification of 4H-SiC (0001)/SiO₂ interface defects by combining density functional and device simulations";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 396 - 399.
P. Evanschitzky, A. Burenkov, J. Lorenz:
"Double Patterning: Simulating a Variability Challenge for Advanced Transistors";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 105 - 108.
L. Filipovic, O. Baumgartner, H. Kosina:
"Modeling Direct Band-to-Band Tunneling using QTBM";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 212 - 215.
L. Filipovic, S. Selberherr, G. Mutinati, E. Brunet, S. Steinhauer, A. Köck, J. Kraft, J. Siegert, F. Schrank, C. Gspan, W. Grogger:
"Modeling the Growth of Thin SnO₂ Films using Spray Pyrolysis Deposition";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 208 - 211.
G. Fisicaro, L. Pelaz, M. Aboy, P. Lopez, M. Italia, K. Huet, F. Cristiano, Z. Essa, Q. Yang, E. Bedel-Pereira, M. Hackenberg, P. Pichler, M. Quillec, N. Taleb, A. La Magna:
"Dopant dynamics and defects evolution in implanted silicon under laser irradiations: a coupled continuum and Kinetic Monte Carlo approach";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 33 - 36.
X. Fong, K. Roy:
"A Hybrid Spin-charge Mixed-mode Simulation Framework for Evaluating STT-MRAM Bit-cells Utilizing Multiferroic Tunnel Junctions";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 372 - 375.
Y. Fukunaga, M. Miura-Mattausch, U. Feldmann, H. Kikuchiharasa, M. Miyake, H.J. Mattausch, T. Nakagawa:
"Compact Modeling of SOI MOSFETs with Ultra Thin Silicon and BOX Layers for Ultra Low Power Applications";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 284 - 287.
A. Gencer, D. Tsamados, V. Moroz:
"Fin Bending due to Stress and its Simulation";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 109 - 112.
V. P. Georgiev, E. Towie, A. Asenov:
"Interactions Between Precisely Placed Dopants and Interface Roughness in Silicon Nanowire Transistors: Full 3-D NEGF Simulation Study";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 416 - 419.
W. Griffin, K. Roy:
"Accelerated Variation Simulation through Parameter Reduction";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 336 - 339.
D. Guoy, A. Gencer, Z. Tan, S. Chalasani, M. Johnson, L. Villablanca, S. Simeonov:
"3-D Simulation of Silicon Oxidation: Challenges, Progress and Results";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 196 - 199.
D. Habersat, A. Lelis, N. Goldsman:
"Simulating Ion Transport and its Effects in Silicon Carbide Power MOSFET Gate Oxides";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 324 - 327.
F.O. Heinz, L. Smith:
"Fast Simulation of Spin Transfer Torque Devices in a General Purpose TCAD Device Simulator";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 127 - 130.
C. Ho, G. Panagopoulos, S. Kim, Y. Kim, D. Lee, K. Roy:
"A Physics-Based Statistical Model for Reliability of STT-MRAM Considering Oxide Variability";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 29 - 32.
C. Hu:
"Compact Modeling for the Changing Transistor";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 49 - 52.
P. Ivanov, A. Valavanis, Z. Ikonic, R.W. Kelsall:
"Simulated Effect of Epitaxial Growth Variations on THz Emission of SiGe/Ge Quantum Cascade Structures";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 328 - 331.
X. Ji, Y. Wang, Z. Yu:
"First-principle investigation of Ti wetting layer influence on metal-graphene contact";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 392 - 395.
W. Jiang, M. Rolandi, H. Lai, S.T. Dunham:
"Ab-initio and Continuum Simulation of High-Field Chemistry of Diphenylgermane and Diphenylsilane for Scanning Probe Direct Write";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 151 - 154.
X. Jiang, R. Wang, R. Huang, J. Chen:
"Simulation of Correlated Line-Edge Roughness in Multi-Gate Devices";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 123 - 126.
S. Jin, S.-M. Hong, W. Choi, K.-H. Lee, Y. Park:
"Coupled Drift-Diffusion (DD) and Multi-Subband Boltzmann Transport Equation (MSBTE) Solver for 3D Multi-Gate Transistors";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 348 - 351.
B. Kaczer, V. Afanas�ev, K. Rott, F. Cerbu, J. Franco, W. Gös, T. Grasser, O. Madia, A. Nguyen, A. Stesmans, H. Reisinger, M. Toledano-Luque, P. Weckx:
"Experimental characterization of BTI defects";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD (MORDRED Workshop)", (2013), 444 - 450.
T. Kanemura, K. Kato, H. Tanimoto, N. Aoki, Y. Toyoshima:
"Atomistic Study of Sulfur Diffusion and S2 Formation in Silicon Low-temperature Rapid Thermal Annealing";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 41 - 44.
G.S. Kliros:
"Analytical Modelling of Current-Voltage Characteristics of Ballistic Graphene Nanoribbon Field-Effect Transistors";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 320 - 323.
A. Kumar, M. Law:
"Modeling and Simulation of Dopant Segregation at NiSi/Si Interface Using Chemical Potential Approach";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 248 - 251.
P. Kumar, B. Srinivasan, N. Mohapatra:
"Nonlinear PCA for Source Optimization in Optical Lithography";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 216 - 219.
S. Liao, E. Towie, D. Balaz, C. Riddet, B. Cheng, A. Asenov:
"PDK development for 10nm III-V/Ge IFQW CMOS technology including statistical variability";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 220 - 223.
C. Lin, C. Ho, C. Lu, M. Chao, K. Roy:
"A Process/Device/Circuit/System Compatible Simulation Framework for Poly-Si TFT Based SRAM Design";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 440 - 443.
D. Lu, J. Chang, M. Guillorn, C.-H. Lin, J. Johnson, P. Oldiges, K. Rim, M. Khare, W. Haensch:
"A Comparative Study of Fin-Last and Fin-First SOI FinFETs";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 147 - 150.
M. Lu, C. Zhou, Y. Tian, C. Liu, Y. Zheng, G. You, Q. Yang, S. Quek, S. Goh, H. Lam, J. Zhang, P. Benyon, C. Tan:
"Bridging Design to Manufacturability by Layout Enhanced Analyses Process Simulations (LEAPS)";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 280 - 283.
Z. Lun, T. Wang, L. Zeng, K. Zhao, X. Liu, Y. Wang, J. Kang, G. Du:
"Simulation on Endurance Characteristic of Charge Trapping Memory";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 292 - 295.
S. Lv, J. Liu, L. Sun, H. Wang, J. Zhang, Z. Yu:
"An Analytical Model for Predicting Forming/Switching Time in Conductive-Bridge Resistive Random-Access Memory (CBRAM)";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 364 - 367.
H. Mahmoudi, T. Windbacher, V. Sverdlov, S. Selberherr:
"Performance Analysis and Comparison of Two 1T/1MTJ-based Logic Gates";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 163 - 166.
T. Misawa, S. Oki, Y. Awano:
"Quasi Self-consistent Monte Carlo Particle Simulations of Local Heating Properties in Nano-scale Gallium Nitride FETs";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 308 - 311.
N. Mori, M. Uematsu, G. Mil nikov, H. Minari, K. Itoh:
"Effects of Phonon Scattering on Discrete-Impurity-Induced Current Fluctuation in Silicon Nanowire Transistors";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 119 - 122.
T. Mori, J. Ida:
"Mechanism of Super Steep Subthreshold Slope Characteristics with Body-Tied SOI MOSFET";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 101 - 104.
X. Mou, L.F. Register, S.K. Banerjee:
"Quantum Transport Simulation of Bilayer pseudoSpin Field-Effect Transistor (BiSFET) with Tight-Binding Hartree-Fock Model";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 420 - 423.
N. Neophytou, Z. Stanojevic, H. Kosina:
"Full Band Calculations of Low-field Mobility in p-type Silicon Nanowire MOSFETs";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 81 - 84.
V. Nguyen, F. Triozon, Y. Niquet:
"Strain effects on transport properties of Si nanowire devices";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 89 - 92.
Y. Oh, H. Lee, I. Avci, S. Park, J. Jeon, J. Kim, W. Sari:
"A Numerical Model using the Phase Field Method for Stress Induced Voiding in a Metal Line during Thermal Bake";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 13 - 16.
M. Ohnishi, K. Suzuki, H. Miura:
"Change of the Electronic Conductivity of Graphene Nanoribbons and Carbon Nanotubes Caused by a Local Deformation";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 131 - 134.
P. Osgnach, A. Revelant, D. Lizzit, P. Palestri, D. Esseni, L. Selmi:
"Toward computationally efficient Multi-Subband Monte Carlo Simulations of Nanoscale MOSFETs";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 176 - 179.
D. Osintsev, V. Sverdlov, S. Selberherr:
"Evaluation of Spin Lifetime in Strained UT2B Silicon-On-Insulator MOSFETs";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 236 - 239.
A. Pal, A. Nainani, K.C. Saraswat:
"Addressing Key Challenges in 1T-DRAM: Retention Time, Scaling and Variability - Using a Novel Design with GaP Source-Drain";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 376 - 379.
N. Pons, F. Triozon, M. Jaud, R. Coquand, S. Martinie, O. Rozeau, Y. Niquet, V. Nguyen, A. Idrissi-El Oudrhiri, S. Barraud:
"Density Gradient calibration for 2D quantum confinement : Tri-Gate SOI transistor application";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 184 - 187.
S. Qin, J. Zhang, Z. Yu:
"A Unified Model of Metallic Filament Growth Dynamics for Conductive-Bridge Random Access Memory (CBRAM)";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 344 - 347.
M. Ramonas, C. Jungemann:
"Spherical Harmonics Solver for Coupled Hot-Electron-Hot-Phonon System";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 360 - 363.
C. Riddet, E. Towie, A. Asenov:
"Performance Evaluation of p-channel FinFETs using 3D Ensemble Monte Carlo Simulation";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 312 - 315.
F. Roger, J. Teva, E. Wachmann, J. Park, R. Minixhofer:
"TCAD study of Single Photon Avalanche Diode on 0.35μm High Voltage Technology";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 252 - 255.
P. Royer, P. Zuber, B. Cheng, A. Asenov, M. Lopez-Vallejo:
"Circuit-level modeling of FinFet sub-threshold slope and DIBL mismatch beyond 22nm";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 204 - 207.
M. Rudan, F. Giovanardi, R. Brunetti, F. Buscemi, G. Marcolini:
"Microscopic Description of the Inter-Trap Transitions in a-Chalcogenides";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 428 - 431.
D. Ruic, C. Jungemann:
"A self-consistent solution of the Poisson, Schrödinger and Boltzmann equations by a full Newton-Raphson approach for nanoscale semiconductor devices";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 356 - 359.
F.G Ruiz, E. Marin, I.M. Tienda-Luna, A. Godoy, C. Martinez-Blanque, F. Gamiz:
"Influence of the back-gate bias on the electron mobility of trigate MOSFETs";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 304 - 307.
H. Ryu, S. Lee, B. Weber, S. Mahapatra, M. Simmons, L. Hollenberg, G. Klimeck:
"A Tight-binding Study of Channel Modulation in Atomic-scale Si:P Nanowires";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 77 - 80.
M. Ryu, J. Lee, K. Park, K.R. Kim, W. Park, S. Han:
"TCAD Modeling and Simulation of Non-Resonant Plasmonic THz Detector Based on Asymmetric Silicon MOSFETs";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 200 - 203.
A. Sahoo, S. Fregonese, M. Weiß, C. Maneux, N. Malbert, T. Zimmer:
"Impact of Back-end-of-line on Thermal Impedance in SiGe HBTs";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 188 - 191.
S. Salemi, D. Ettisserry, A. Akturk, N. Goldsman:
"Density Functional and Monte Carlo-Based Electron Transport Simulation in 4H-SiC(0001)/SiO₂ DMOSFET Transition Region";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 180 - 183.
C. Sampedro, F. Gamiz, A. Godoy, R. Valin, A. Garcia-Loureiro:
"Improving subthreshold MSB-EMC simulations by dynamic particle weighting";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 276 - 279.
A. Satou, V. Ryzhii, T. Otsuji, F.T. Vasko, V.V. Mitin:
"Simulation of terahertz plasmons in graphene with grating-gate structures";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 260 - 263.
F. Schanovsky, O. Baumgartner, W. Gös, T. Grasser:
"A Detailed Evaluation of Model Defects as Candidates for the Bias Temperature Instability";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 1 - 4.
F. Schanovsky, W. Gös, T. Grasser:
"Advanced Modeling of Charge Trapping at Oxide Defects";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD (MORDRED Workshop)", (2013), 451 - 458.
G. Schrag, T. Künzig, G. Wachutka:
"Modeling Reliablity Issues in RF MEMS Switches";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 432 - 435.
J. Sellier, M. Nedjalkov, I. Dimov, S. Selberherr:
"Two-dimensional Transient Wigner Particle Model";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 404 - 407.
M. Sengoku, H. Yoshimura, Y. Sugiura, S. Shimizu:
"Quantitative Full 3D Blooming Analysis on 1.4um BSI CMOS Image sensor";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 400 - 403.
S. Shin, K.R. Kim:
"Novel Design of Multiple Negative-Differential Resistance (NDR) Device in a 32nm CMOS Technology using TCAD";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 316 - 319.
G. Shine, K.C. Saraswat:
"Limits of Specific Contact Resistivity to Si, Ge and III-V Semiconductors Using Interfacial Layers";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 69 - 72.
A. Singulani, H. Ceric, S. Selberherr:
"Stress Estimation in Open Tungsten TSV";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 65 - 68.
A. Spessot, C. Caillat, P. Fazan, R. Ritzenthaler, T. Schram:
"Understanding Workfunction Tuning in HKMG by Lanthanum Diffusion Combining Simulations and Measurements";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 113 - 116.
Z. Stanojevic, H. Kosina:
"Surface-Roughness-Scattering in Non-Planar Channels - the Role of Band Anisotropy";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 352 - 355.
K. Stokbro, A. Blom, S. Smidstrup:
"Atomistic simulation of a III-V p-i-n junction";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 380 - 383.
K. Suzuki, H. Miura, O. Asai, R. Furuya, J. Sung, N. Murata:
"Micro-Texture Dependence of Stress-induced Migration of Electroplated Copper Thin Film Interconnections Used for 3D Integration";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 264 - 267.
C. Toechterle, F. Pfirsch, C. Sandow, G. Wachutka:
"Analysis of the Latch-up Process and Current Filamentation in High-Voltage Trench-IGBT Cell Arrays";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 296 - 299.
G. Torrente, N. Castellani, A. Ghetti, C. Compagnoni, A.L. Lacaita, A.S. Spinelli, A. Benvenuti:
"Assessment of the Statistical Impedance Field Method for the Analysis of the RTN Amplitude in Nanoscale MOS Devices";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 21 - 24.
E. Towie, C. Riddet, A. Asenov:
"Comparison of Raised Source/Drain Implant-Free Quantum-Well and Tri-Gate MOSFETs using 3D Monte Carlo Simulation";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 384 - 387.
J. Verley, E. Keiter, C. Hembree, C. Axness, B. Kerr:
"A new time-dependent analytic compact model for radiation-induced photocurrent in epitaxial structures";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 228 - 231.
A. Wang, E. Chen, T. Shen, J. Wu, C.H. Diaz:
"Quantum Confinement Point of View for Mobility and Stress Responses on (100) and (110) Single- Gate and Double-Gate nMOSFETs";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 192 - 195.
H. Wang, Y. Chen, C. Yang, C.-K. Lin, M.-C. Jeng:
"Compact Modeling for Application-Specific High-Sigma Worst Case";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 61 - 64.
X. Wang, B. Cheng, A. R. Brown, C. Millar, C. Alexander, D. Reid, J. Kuang, S. Nassif, A. Asenov:
"Unified Compact Modelling Strategies for Process and Statistical Variability in 14-nm node DG FinFETs";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 139 - 142.
C. Weber, D. Basu, R. Kotlyar, S. Morarka:
"Technology CAD challenges of modeling multi-gate transistors";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 117 - 118.
T. Windbacher, H. Mahmoudi, V. Sverdlov, S. Selberherr:
"Rigorous Simulation Study of a Novel Non-Volatile Magnetic Flip-Flop";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 368 - 371.
J. Wu, C.H. Diaz:
"Expanding Role of Predictive TCAD in Advanced Technology Development";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 167 - 171.
K. Wu, W. Ding, M.-H. Chiang:
"Performance Advantage and Energy Saving of Triangular-Shaped FinFETs";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 143 - 146.
W. Yao, R. Li, T. Lu, X. Liu, G. Du, K. Zhao:
"Globally hyperbolic moment method for BTE including phonon scattering";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 300 - 301.
F. Yigletu, B. Iniguez, S. Khandelwal, T. Fjeldly:
"Compact Physical Models for Gate Charge and Gate Capacitances of AlGaN/GaN HEMTs";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 268 - 271.
T.-H. Yu, C. Liu, J.-P. Colinge, Y. Sheu, J. Wu, C.H. Diaz:
"Electrostatics and Ballistic Transport Studies in Junctionless Nanowire Transistors";
Talk: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 85 - 88.
K. Zhao, T. Lu, G. Du, X.-Y. Liu, X. Zhang:
"Impact of Back biasing in Ultra Short Channel UTBB SOI nMOSFETs";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 288 - 291.
W. Zisser, H. Ceric, R.L. de Orio, S. Selberherr:
"Electromigration Analyses of Open TSVs";
Poster: Conference, Glasgow, UK; 2013-09-03 - 2013-09-05; in: "Proc. of SISPAD", (2013), 244 - 247.