SISPAD 2012 Proceedings

• F. Adamu-Lema, S. Amoroso, S. Markov, L. Gerrer, A. Asenov:
  "A Unified Computational Scheme for 3D Statistical Simulation of Reliability Degradation of Nanoscale MOSFETs";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 101 - 104.
  
  
• A. Afzalian, N. Couniot, D. Flandre:
  "Detection Limit of ultra-scaled Nanowire Biosensors";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 165 - 168.
  
  
• Z. Aksamija, I. Knezevic:
  "Thermal Transport in Suspended and Supported Graphene Nanostructures";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 84 - 85.
  
  
• A. Akturk, S. Potbhare, J. Booz, N. Goldsman, D. Gundlach, R. Nandwana, K. Mayaram:
  "CoolSPICE: SPICE for Extreme Temperature Range Integrated Circuit Design and Modeling";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 63 - 66.
  
  
• G. Álvarez-Botero, R. Torres-Torres, R. Murphy-Arteaga:
  "Modeling the Distributed Physical Effects in the Intrinsic Base of SiGe HBTs Using Transmission Line Concepts";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 320 - 323.
  
  
• R. Ambrosio, G. Lara, A. Jimenez, J. Mireles, J. Ibarra, A. Heredia:
  "Design and Simulation of a Pressure Sensor Based on Optical Waveguides for Applications in Hydraulic Fracturing";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 324 - 327.
  
  
• V. Axelrad, K. Tsujita, K. Mikami, R. Nakayama:
  "Resist Diffusion Model for Fast and Accurate sub- 20nm Lithography Simulation";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 181 - 184.
  
  
• O. Badami, N. Kumar, D. Saha, S. Ganguly:
  "Quantum Drift Diffusion and Quantum Energy Simulation of Nanowire Transistors";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 328 - 331.
  
  
• R. Baek, C. Kang, A. Kumar, C. Sohn, T. Michalak, C. Borst, C. Hobbs, P. Kirsch, R. Jammy:
  "Comprehensive Study of Process-Induced Device Performance Variability and Optimization for 14 nm Technology Node Bulk FinFETs";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 105 - 108.
  
  
• A. Basak, S. Manhas, G. Kapil, S. Dasgupta, N. Jain:
  "A Simulation Study of the Effect of Platinum Contact on CNT Based Gas Sensors Using Self-Consistent Field with NEGF Method";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 169 - 172.
  
  
• B. Behin-Aein, A. Paul, S. Mehrotra, B. Sahu, K. Akarvarda, A. Jacob, Z. Krivokapic, G. Klimeck:
  "Atomistic Analalysis of Electrical Performance of Highly Scaled Si_1-xGe_x p-FinFETs";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 280 - 283.
  
  
• M. Bina, O. Triebl, B. Schwarz, M. Karner, B. Kaczer, T. Grasser:
  "Simulation of Reliability on Nanoscale Devices";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 109 - 112.
  
  
• K. Bothe, P. von Hauff, D. Barlage, A. Afshar, A. Foroughi-Abari, K. Cadien:
  "GaN MOSFET: Projections for High Power High Frequency Applications";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 332 - 335.
  
  
• A. Burenkov, E. Bär, J. Lorenz, C. Kampen:
  "Correlation-Aware Analysis of the Impact of Process Variations on Circuit Behavior";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 260 - 263.
  
  
• H. Ceric, R.L. de Orio, S. Selberherr:
  "TCAD Study of Electromigration Failure Modes in Sn-Based Solder Bumps";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 264 - 267.
  
  
• J. Chang, L.F. Register, S.K. Banerjee:
  "Atomistic Quantum Transport Simulation of Topological Insulator Bi₂Se₃ Tunnel FETs";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 43 - 46.
  
  
• A. Chatterjee, C. Duvvury, F. Brewer:
  "Physics of Optimized High Current ESD Performance of Drain Extended NMOS (De-NMOS)";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 340 - 343.
  
  
• E. Chen, A. Wang, H. Chen, W. Hsieh, T.-H. Yu, T. Shen, J. Wu, C.H. Diaz:
  "Modeling Source/Drain Contact Resistance in Nanoscale MOSFETs";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 344 - 347.
  
  
• J. Chen, T. Henson:
  "Process Window Definition for Power MOSFET by Transient Avalanche Device Simulation";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 348 - 351.
  
  
• B. Cheng, X. Wang, A. R. Brown, C. Millar, A. Asenov, J. Kuang, S. Nassif:
  "Statistical TCAD Based PDK Development for a FinFET Technology at 14nm Technology node";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 113 - 116.
  
  
• S. Choi, Y.J. Park, C.-K. Baek, S. Park:
  "An Improved 3D Monte Carlo Simulation of Reaction Diffusion Model for Accurate Prediction on the NBTI Stress/Relaxation";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 185 - 188.
  
  
• M. Claus, S. Blawid, P. Sakalas, M. Schröter:
  "Analysis of the frequency dependent gate capacitance in CNTFETs";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 336 - 339.
  
  
• O. Cueto, G. Navarro, V. Sousa, L. Perniola, A. Glière:
  "New developments in a finite-volume electro-thermal solver coupled with the Level Set Method to study crystallization mechanisms in PCM devices";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 201 - 204.
  
  
• S. Datta:
  "Modeling "circuits" with spins and magnets";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 3.
  
  
• R.L. de Orio, H. Ceric, S. Selberherr:
  "Modeling of Electromigration Induced Resistance Change in Three-Dimensional Interconnects with Through Silicon Vias";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 268 - 271.
  
  
• J. Ding, Q. Shao, J. Zhang, Z. Yu:
  "Comparison for Various Kinds of Hamiltonian in Graphene Nanoribbon Quantum Transport Calculation";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 352 - 355.
  
  
• T. Dinh, D. Klaassen, T. Vanhoucke, E. Gridelet, H. Mertens, R. van Dalen, P. Magnee, M. Ramonas, C. Jungemann:
  "Comparison of noise predictions by commercial TCAD device simulator to results from a spherical harmonics expansion solver";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 356 - 359.
  
  
• G. Donnarumma, V. Palankovski, S. Selberherr, J. Wozny, A. Kubiak, L. Ruta, Z. Lisik:
  "Influence of Bandgap Narrowing and Carrier Lifetimes on the Forward Current-Voltage Characteristics of a 4H-SiC p-i-n Diode";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 125 - 128.
  
  
• J. Dura, F. Triozon, D. Munteanu, S. Barraud, S. Martinie, J. Autran:
  "Numerical study of variability of technological parameters on remote coulomb scattering in nanowire MOSFETs";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 141 - 144.
  
  
• K. El Sayed, E. Lyumkis, A. Wettstein:
  "Modeling Statistical Variability with the Impedance Field Method";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 205 - 208.
  
  
• D. Esseni:
  "Strain engineering in MOS and Tunnel FETs: models, challenges and opportunities.";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 2.
  
  
• L. Filipovic, S. Selberherr:
  "Simulations of Local Oxidation Nanolithography by AFM Based on the Generated Electric Field";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 189 - 192.
  
  
• K. Fukuda, T. Mori, W. Mizubayashi, Y. Morita, A. Tanabe, M. Masahara, T. Yasuda, S. Migita, H. Ota:
  "On the nonlocal modeling of tunnel-FETs";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 284 - 287.
  
  
• A. Gnudi, S. Reggiani, E. Gnani, G. Baccarani:
  "Analytical Model for the Threshold Voltage Variability due to Random Dopant Fluctuations in Junctionless FETs";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 117 - 120.
  
  
• D. Gong, C. Shen:
  "Full-TCAD Device Simulation of CMOS Circuits with a Novel Half-Implicit Solver";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 272 - 275.
  
  
• B. Gunnar Malm, M. Kolahdouz, F. Forsberg, F. Niklaus:
  "Quantum Mechanical TCAD Study of Epitaxial SiGe Thermistor Layers";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 173 - 176.
  
  
• S. Gupta, B. Magyari-Koepe, Y. Nishi, K.C. Saraswat:
  "Band Structure and Ballistic Electron Transport Simulations in GeSn Alloys";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 3 - 6.
  
  
• C. Ho, G. Panagopoulos, C. Lu, K. Roy:
  "A Physical Model to Predict Grain Boundary Induced Transistor Threshold Voltage Variation in Poly-Si TFTs";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 145 - 148.
  
  
• S.-M. Hong, W. Choi, W. Lee, Y.T. Kim, U. Kwon, K.-H. Lee, Y. Park:
  "Mobility Calculation for Nanoscale Multi-Gate FETs with Arbitrary Two-Dimensional Cross Section with a Homogeneous Channel Including Strain Effects";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 360 - 363.
  
  
• H. Huang, Y. Liang, G.S. Samudra, Y. Li, Y.-C. Yeo:
  "Modelling and Simulations on Current Collapse in AlGaN/GaN Power HEMTs";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 23 - 26.
  
  
• P. Huang, B. Gao, B. Chen, F. Zhang, L. Liu, G. Du, J. Kang, X. Liu:
  "Stochastic Simulation of Forming, SET and RESET Process for Transition Metal Oxide-based Resistive Switching Memory";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 312 - 315.
  
  
• G. Indalecio, A. Garcia-Loureiro, M. Aldegunde, K. Kalna:
  "3D Simulation Study of Work-Function Variability in a 25 nm Metal-Gate FinFET with Curved Geometry using Voronoi Grains";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 149 - 152.
  
  
• Y. Isagi, Y. Yamauchi, Y. Kamakura:
  "Monte Carlo Simulation of Program Disturb in Contact-Less Virtual Ground NOR Flash Memory";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 7 - 10.
  
  
• W. Jiang, M. Salvador, D. Ginger, S.T. Dunham:
  "Optics and Device Simulation of Surface Plasmonic Enhancement of Organic Solar Cell Performance using Silver Nano-Prisms";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 245 - 248.
  
  
• T. Kamioka, H. Imai, T. Watanabe, K. Ohmori, K. Shiraishi, M. Niwa, K. Yamada:
  "Impact of Single Trapped Charge in Gate-All-Around Nanowire Channels Studied by Ensemble Monte Carlo/Molecular Dynamics Simulation";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 11 - 14.
  
  
• B. Kim, H. Jung, Y. Chung, M. Shin, K. Lee:
  "Multi-scale Simulation of Interfacial Roughness Effects in Silicon Nanowires";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 47 - 50.
  
  
• S.-D. Kim, E. Alptekin, S. Jain, H. Shang, A. Scholze, S. Furkay, D. Lee, C. Lavoie, P. Solomon, M. Raymond:
  "Accurate Simulation of Doping-Dependent Silicide Contact Resistance Using Nano-contact Test Structure for 22nm-node and Beyond";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 193 - 196.
  
  
• A. Kumar, M. Law:
  "Nickel Silicide Growth Model: Coupling of Diffusion with Level Set Methods";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 364 - 367.
  
  
• A. Kumar, K. Xiu, W. Haensch, R. Robison, M. Bajaj, J.B. Johnson, S. Furkay, R. Williams:
  "A Simple, Unified 3D Stress Model for Device Design in Stress-Enhanced Mobility Technologies";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 300 - 303.
  
  
• T. Kurusu, H. Tanimoto, M. Wada, A. Isobayashi, A. Kajita, N. Aoki, Y. Toyoshima:
  "Impact of Line-Edge Roughness on Electrical Resistivity in Decananoscale Copper Wires: A Monte Carlo Study";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 304 - 307.
  
  
• H. Lepage, G. Le Carval, A. Kaminski-Cachopo:
  "Methodology for Simulation of Electronic Transport in Nanocrystal Solids";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 15 - 18.
  
  
• D. Li, Z. Guan, M. Marek-Sadowska, S.R. Nassif:
  "Multi-Via Electromigration Lifetime Model";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 308 - 311.
  
  
• C.-K. Lin, C. Hsiao, K. Su, M.-C. Jeng:
  "The story beyond primitive compact model - A super compact model for advanced technology";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 1.
  
  
• C.-K. Lin, C. Hsiao, H. Tseng, M.-C. Jeng:
  "A Comprehensive Solution for Process Variation Characterization and Modeling";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 197 - 200.
  
  
• J. Liu, Z. Yu, L. Sun:
  "An Accurate Surface-Potential Based Large-Signal Model for HEMTs";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 67 - 70.
  
  
• C. Ma, H.J. Mattausch, M. Miyake, M. Mattausch, T. Iizuka, K. Matsuzawa, S. Yamaguchi, T. Hoshida, A. Kinoshita, T. Arakawa, J. He:
  "Development of Predictive Model and Circuit Simulation Methodology for Negative Bias Temperature Instability Effects";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 213 - 216.
  
  
• H. Mahmoudi, V. Sverdlov, S. Selberherr:
  "A Robust and Efficient MTJ-based Spintronic IMP Gate for New Logic Circuits and Large-Scale Integration";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 225 - 228.
  
  
• A. Makarov, V. Sverdlov, S. Selberherr:
  "Study of Self-Accelerating Switching in MTJs with Composite Free Layer by Micromagnetic Simulations";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 229 - 232.
  
  
• S. Markov, L. Gerrer, F. Adamu-Lema, S. Amoroso, A. Asenov:
  "Time Domain Simulation of Statistical Variability and Oxide Degradation Including Trapping/detrapping Dynamics";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 157 - 160.
  
  
• M. Mehta, V. Bevara, P. Andrei, J. Zheng:
  "Limitations and Potential Li-Air Batteries: a Simulation Prediction";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 241 - 244.
  
  
• Y. Miyoshi, M. Ogawa, S. Souma, H. Nakamura:
  "Analysis of tunneling characteristics through hetero interface of InAs/Si nanowire tunneling field effect transistors";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 368 - 371.
  
  
• M. Mohamed, Z. Aksamija, W. Vitale, F. Hassan, U. Ravaioli:
  "Interplay between the Electrical and Thermal Transport of Silicon Nanoscale MOSFETs";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 372 - 375.
  
  
• M. Nawi, A. Manaf, M. Arshad, O. Sidek:
  "Modeling of Biomimetic Flow Sensor based on Artificial Hair Cell using CFD and FEM Approach";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 161 - 164.
  
  
• K. Nidhi, N. Agarwal, S. Yang, X. Purwadi, G. Sheu, J. Tsai:
  "Failure Analysis of Power MOSFETs based on Multifinger Configuration under Unclamped Inductive Switching (UIS) Stress Condition";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 27 - 30.
  
  
• M. Ohnishi, K. Suzuki, H. Miura:
  "Change of the Electronic Conductivity of CNTs and Graphene Sheets Caused by a Three-dimensional Strain Field";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 86 - 89.
  
  
• Y. Oodate, H. Tanoue, M. Miyake, A. Tanaka, Y. Shintaku, T. Nakahagi, A. Toda, T. Iizuka, H. Kikuchihara, H.J. Mattausch, M. Miura-Mattausch:
  "Characterization of Time Dependent Carrier Trapping in Poly-Crystalline TFTs and Its Accurate Modeling for Circuit Simulation";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 71 - 74.
  
  
• D. Osintsev, O. Baumgartner, Z. Stanojevic, V. Sverdlov, S. Selberherr:
  "Electric Field and Strain Effects on Surface Roughness Induced Spin Relaxation in Silicon Field-Effect Transistors";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 153 - 156.
  
  
• B. Padmanabhan, D. Vasileska, S.M. Goodnick:
  "Influence of Shielding on the Thermal Characteristics of GaN HEMTs";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 237 - 240.
  
  
• S. Park, S. Choi, K. Jeon, H. Kim, S. Rhee, i. Yoon, Y.J. Park:
  "A 3D Simulation of the Lateral Charge Spreading Effect in Charge Trapping NAND Flash memory";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 376 - 379.
  
  
• K. Parrish, M. Ramon, S.K. Banerjee, D. Akinwande:
  "A Compact Model for Graphene FETs for Linear and Non-linear Circuits";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 75 - 78.
  
  
• E. Patrick, D. Horton, M. Griglione, M.E. Law:
  "A Self-Consistent Electro-Thermo-Mechanical Device Simulator based on the Finite-Element Method";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 217 - 220.
  
  
• D. Reddy, P. Jadaun, A. Valsaraj, L.F. Register, S.K. Banerjee:
  "Time Dependent Quantum Transport in Graphene";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 51 - 54.
  
  
• S. Reggiani, G. Barone, S. Poli, M. Chuang, W. Tian:
  "Predictive TCAD Approach for the Analysis of Hot-Carrier-Stress Degradation in Integrated STI-based LDMOS Transistors";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 31 - 34.
  
  
• R. Rhyner, M. Luisier, A. Schenk:
  "Atomistic Simulation of Phonon-Assisted Tunneling in Bulk-like Esaki Diodes";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 55 - 58.
  
  
• F. Roger, J. Kraft, K. Molnar, R. Minixhofer:
  "TCAD Electrical Parameters Extraction on Through Silicon Via (TSV) Structures in a 0.35μm Analog Mixed-Signal CMOS";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 380 - 383.
  
  
• M. Rudan, F. Buscemi, G. Marcolini, F. Giovanardi, A. Cappelli, E. Piccinini, R. Brunetti:
  "Many-Level Trap-to-Band Transitions in Chalcogenide Memories";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 129 - 132.
  
  
• S. Rudin, G. Rupper:
  "Plasma Instability and Non-linear Wave Propagation in Gate-controlled Semiconductor and Graphene Conduction Channels.";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 90 - 93.
  
  
• K. Rupp, C. Jungemann, M. Bina, A. Jungel, T. Grasser:
  "Bipolar Spherical Harmonics Expansions of the Boltzmann Transport Equation";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 19 - 22.
  
  
• Y. Saito, H. Fujikawa, S. Souma, M. Ogawa:
  "Fast Perturbative Treatment for Efficient Nano-Scale Device Simulation Based on Bridge-Function Pseudo-Spectral Method";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 384 - 387.
  
  
• S. Salemi, N. Goldsman, A. Akturk, A. Lelis:
  "Density Functional Theory Based Investigation of Defects and Passivation of 4H-Silicon Carbide/SiO₂ Interfaces";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 121 - 124.
  
  
• J. Sellier, J.E. Fonseca, T. Kubis, M. Povolotskyi, Y. He, H. Ilatikhameneh, Z. Jiang, S. Kim, D. Mejia, P. Sengupta, Y. Tan:
  "NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 388 - 391.
  
  
• N. Seoane, A. Garcia-Loureiro, E. Comesaña, R. Valin, G. Indalecio, M. Aldegunde, K. Kalna:
  "3D simulations of random dopant induced threshold voltage variability in inversion-mode In_0.53Ga_0.47As GAA MOSFETs";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 392 - 395.
  
  
• X. Shao, N. Goldsman, N. Dhar, F. Yesilkoy, A. Akturk, S. Potbhare, M. Peckerar:
  "Simulation Study of Rectifying Antenna Structure for Infrared Wave Energy Harvesting Applications";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 249 - 252.
  
  
• C. Sohn, C. Kang, R. Baek, P. Kirsh, R. Jamny, M. Ko, D. Choi, H. Sagong, E. Jeong, C.-K. Baek, J.-S. Lee, Y. Jeong:
  "Modeling and Analysis of the Parasitic Series Resistance in Raised Source/Drain FinFETs with Polygonal Epitaxy";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 288 - 291.
  
  
• R. Soligo, D. Guerra, D.K. Ferry, S.M. Goodnick, M. Saraniti:
  "Carrier Dynamics Study of Lateral Scaling and the Limiting High-Frequency Performance of GaN-HEMTs";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 233 - 236.
  
  
• S. Souma, S. Kaino, M. Ogawa:
  "Tight-binding molecular dynamics study of mechanical and electronic properties in twisted graphene nanoribbons";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 133 - 136.
  
  
• N. Sule, K.J. Willis, S.C. Hagness, I. Knezevic:
  "Numerical simulation of ac transport in graphene on a SiO2 substrate";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 94 - 97.
  
  
• K. Suzuki, H. Miura, O. Asai, N. Saito, N. Murata:
  "Stress-induced Migration of Electroplated Copper Thin Film Interconnections Depending on Thermal History";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 396 - 399.
  
  
• X. Tong, H. Wu, Q. Liang, H. Zhong, H. Zhu, D. Chen, T. Ye:
  "On the design of 2-port SRAM memory cells using PNPN diodes for VLSI application";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 316 - 319.
  
  
• S. Venugopalan, M. Karim, A. Niknejad, C. Hu, D.D. Lu:
  "Compact Models for Real Device Effects in FinFETs";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 292 - 295.
  
  
• X. Wang, A. R. Brown, B. Cheng, A. Asenov:
  "RTS Amplitude Distribution in 20nm SOI FinFETs subject to Statistical Variability";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 296 - 299.
  
  
• R. Watanabe, Y. Kamakura:
  "Emprirical Pseudopotential Calculations of Two-dimensional Electronic States in 4H-SiC Inversion layers";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 137 - 140.
  
  
• K. Wei, X. Liu, G. Du, E. James:
  "Simulating the Random Dopant Effect: A New Three- Dimensional Monte Carlo Approach";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 209 - 212.
  
  
• J. Weinbub, K. Rupp, S. Selberherr:
  "A Flexible Execution Framework for High-Performance TCAD Applications";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 400 - 403.
  
  
• C. Weiss, G. Wachutka:
  "A Numerical "a-posteriori" - Method to Calculate Local Self-Heating in Power Devices After the Impact of a Cosmic Particle";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 35 - 38.
  
  
• J.-M. Woo, S. Kim, Y.-J. Park:
  "Transient State in the Affinity-Based Biosensor: A Simulation and Experimental Study";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 177 - 180.
  
  
• H. Wu, X. Tong, M. Xu, W. Xiao, B. Wu, H. Zhu, Q. Liang, L. Zhao, H. Zhong, Z. Luo, H. Yin, Q. Xu, C. Zhao, D. Cheng, T. Ye, H. Yu:
  "A TCAD Study of Substrate Dopant for Extremely Thin SOI MOSFETs with Ultra-Thin Buried Oxide";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 404 - 407.
  
  
• K. Wu, A. Sachid, F.-L. Yang, C. Hu:
  "Toward 44% Switching Energy Reduction for FinFETs with Vacuum Gate Spacer";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 253 - 256.
  
  
• W. Wu, U. Aghoram, H. Wu, D. Basu, A. Sanford:
  "Correlation between Gate Charge and Gate Capacitances of Power MOSFETs and Extraction of Related BSIM3/4 Model Parameters";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 39 - 42.
  
  
• K. Xiu, P. Oldiges:
  "Simulation of phonon-induced mobility under arbitrary stress, wafer and channel orientations and its application to FinFET technology";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 408 - 411.
  
  
• S. Xu, K. Xiu, P. Oldiges:
  "Investigation of the Impact of Random Dopant Fluctuation on Static Noise Margin of 22nm SRAM";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 276 - 279.
  
  
• K. Yalavarthi, V. Chimalgi, S. Sundaresan, S. Ahmed:
  "Modeling InGaN Disk-in-Wire LEDs: Interplay of Quantum Atomicity and Structural Fields";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 221 - 224.
  
  
• C. Yeung, A. Khan, J. Cheng, S. Salahuddin, C. Hu:
  "Non-Hysteretic Negative Capacitance FET with Sub- 30mV/dec Swing over 10⁶X Current Range and I_ON of 0.3mA/μm without Strain Enhancement at 0.3V V_DD";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 257 - 259.
  
  
• I. Yoon, S. Choi, S. Rhee, H. Kim, S. Park, Y.J. Park:
  "Correction of the RTN Model considering 3D Effect of Single Trapped Charge";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 412 - 415.
  
  
• T.-H. Yu, J. Ho, C. Liu, C.-C. Wang, W.-Y. Chen, H. Cheng, K. Wu, K.-C. Tu, W. Hsieh, C. Huang, T. Shen, Y. Sheu, J. Wu, C.H. Diaz:
  "Improvement of Drive Current Prediction in FinFET using Full 3D Process/Stress/Device Simulations";
  Poster: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 416 - 419.
  
  
• W. Zhang, D. Wooalard:
  "THz-Frequency Conductivity in Monolayer and Bilayer Graphene";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 97 - 100.
  
  
• W. Zhu, C. Linghu, J. Zhang, L. Zhang, Z. Yu:
  "Compact Model of Graphene Field Effect Transistors and Its Application in Circuit Simulation of RF Mixer Consisting of GFETs and CMOS";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 79 - 82.
  
  
• T. Zushi, T. Watanabe, K. Ohmori, K. Yamada:
  "Molecular Dynamics Simulation of Heat Transport in Silicon Fin Structures";
  Talk: Conference, Denver, CO, USA; 2012-09-05 - 2012-09-07; in: "Proc. of SISPAD", (2012), 59 - 62.