SISPAD 2011 Proceedings

• A. Akturk, S. Salemi, N. Goldsman, S. Potbhare, A. Lelis:
  "Density Functional Theory Based Simulation of Carrier Transport in Silicon Carbide and Silicon Carbide-Silicon Dioxide Interfaces";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 119 - 122.
  
  
• C. Alexander, A. Asenov:
  "Statistical MOSFET Current Variation Due to Variation in Surface Roughness Scattering";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 275 - 278.
  
  
• S.M. Amoroso, C. Alexander, S. Markov, G. Roy, A. Asenov:
  "A Mobility Model Correction for 'Atomistic' Drift-Diffusion Simulation";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 279 - 282.
  
  
• M.G. Ancona, S. Binari:
  "Thermoelectromechanical Simulation of GaN HEMTs";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 111 - 114.
  
  
• P. Asenov, F. Adamu-Lema, S. Roy, C. Millar, A. Asenov, G. Roy, U. Kovac, D. Reid:
  "The Effect of Compact Modelling Strategy on SNM and Read Current variability in Modern SRAM";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 283 - 286.
  
  
• V. Axelrad, H. Hayashi, I. Kurachi:
  "Physical Circuit-Device Simulation of ESD and Power Devices";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 175 - 178.
  
  
• S. Barraud, T. Poiroux, O. Faynot:
  "A Wigner Function-Based Determinist Method for the Simulation of Quantum Transport in Silicon Nanowire Transistors";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 75 - 78.
  
  
• O. Baumgartner, Z. Stanojevic, H. Kosina:
  "Efficient Simulation of Quantum Cascade Lasers using the Pauli Master Equation";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 91 - 94.
  
  
• M. Bellini, J. Vobecky:
  "TCAD simulations of irradiated power diodes over a wide temperature range";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 183 - 186.
  
  
• A. Burenkov, P. Pichler, J. Lorenz, Y. Spiegel, J. Duchaine, F. Torregrosa:
  "Simulation of Plasma Immersion Ion Implantation";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 231 - 234.
  
  
• F. Buscemi, E. Piccinini, F. Giovanardi, M. Rudan, R. Brunetti, C. Jacoboni:
  "Quantum Electronic Trap-to-Band Transitions in Chalcogenides Induced by Electron-Electron Interaction";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 67 - 70.
  
  
• H. Ceric, R.L. de Orio, F. Schanovsky, W. Zisser, S. Selberherr:
  "Multilevel Simulation for the Investigation of Fast Diffusivity Paths";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 135 - 138.
  
  
• H. Chang, H. Li, C. Liu, M. Tsai:
  "A Parameterized SPICE Macromodel of Resistive Random Access Memory and Circuit Demonstration";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 163 - 166.
  
  
• K. Chang, H.-K. Noh, E. Choi, B. Ryu:
  "First-principles study of Si CMOS materials and nanostructures";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 9.
  
  
• H.-W. Cheng, Y. Li, C. Yiu, H. Su:
  "Nanosized Metal Grains Induced Electrical Characteristic Fluctuation in 16 nm Bulk and SOI FinFET Devices with TiN/HfO₂ Gate Stack";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 287 - 290.
  
  
• Y. Chiu, Y. Li, H.-W. Cheng:
  "Correlation between Interface Traps and Random Dopants in Emerging MOSFETs";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 291 - 294.
  
  
• R.L. de Orio, H. Ceric, S. Selberherr:
  "A Compact Model for Early Electromigration Lifetime Estimation";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 23 - 26.
  
  
• J. Dura, S. Martinie, D. Munteanu, F. Triozon, S. Barraud, Y.M. Niquet, J.-L. Autran:
  "Analytical model of drain current in nanowire MOSFETs including quantum confinement, band structure effects and quasi-ballistic transport: device to circuit performances analysis";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 43 - 46.
  
  
• Z. Essa, P. Boulenc, C. Tavernier, F. Hirigoyen, A. Crocherie, J. Michelot, D. Rideau:
  "3D TCAD Simulation of Advanced CMOS Image Sensors";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 187 - 190.
  
  
• L. Filipovic, S. Selberherr:
  "A Level Set Simulator for Nanooxidation using Non-Contact Atomic Force Microscopy";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 307 - 310.
  
  
• X. Fong, M. Gupta, N. Mojumder, S. Choday, C. Augustine, K. Roy:
  "KNACK: A Hybrid Spin-Charge Mixed-Mode Simulator for Evaluating Different Genres of Spin-Transfer Torque MRAM Bit-cells";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 51 - 54.
  
  
• K. Fukuda, M. Nishizawa, T. Tada, L. Bolotov, K. Suzuki, S. Sato, H. Arimoto, T. Kanayama:
  "3D Modeling based on Current Continuity for STM Carrier Profiling of Semiconductor Devices";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 259 - 262.
  
  
• A. Glière, O. Cueto, J. Hazart:
  "Coupling the Level Set Method with an electro-thermal solver to simulate GST based PCM cells";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 63 - 66.
  
  
• X. Guan, D. Kim, K.C. Saraswat, W. Wong:
  "Analytical Approximation of Complex Band Structures for Band-to-Band Tunneling Models";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 270 - 273.
  
  
• D. Guerra, D.K. Ferry, S.M. Goodnick, M. Saraniti, F.A. Marino:
  "Large-Signal Full-Band Monte Carlo Device Simulation of Millimeter-Wave Power GaN HEMTs with the Inclusion of Parasitic and Reliability Issues.";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 87 - 90.
  
  
• S. Hadi, A. Nayfeh, P. Hashemi, J. Hoyt:
  "a-Si/c-Si_1-xGe_x/c-Si Heterojunction Solar Cells";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 191 - 194.
  
  
• P. Hehenberger, W. Gös, O. Baumgartner, J. Franco, B. Kaczer, T. Grasser:
  "Quantum-Mechanical Modeling of NBTI in High-k SiGe MOSFETs";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 11 - 14.
  
  
• T. Ikeda, H. Saito, F. Kawai, K. Hamada, T. Ohmine, H. Takada, V. Deshpande:
  "Development of SF₆/O₂/Si Plasma Etching Topography Simulation Model using New Flux Estimation Method";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 115 - 118.
  
  
• T. Kamioka, H. Imai, T. Watanabe, K. Ohmori, K. Shiraishi, Y. Kamakura:
  "Impact of Channel Shape on Carrier Transport Investigated by Ensemble Monte Carlo/Molecular Dynamics Simulation";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 83 - 86.
  
  
• H. Kasai, S. Aspera, H. Kishi, N. Awaya, S. Ohnishi, Y. Tamai:
  "First Principles Study on the Switching Mechanism in Resistance Random Access Memory Devices";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 211 - 214.
  
  
• K. Kawabata, M. Tanizawa, K. Ishikawa, Y. Inoue, M. Inuishi, T. Nishimura:
  "Study of Current Induced Magnetic Domain Wall Movement with Extremely Low Energy Consumption by Micromagnetic Simulation";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 55 - 58.
  
  
• H. Kim, J. You, D. Lee, T. Kim, K. Lee:
  "Enhancement of the device characteristics for nanoscale charge trap flash memory devices utilizing a metal spacer layer";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 203 - 206.
  
  
• Y. Kitahara, D. Hagishima, K. Matsuzawa:
  "Reliability of NAND Flash Memories Induced by Anode Hole Generation in Floating-Gate";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 131 - 134.
  
  
• S. Koba, H. Tsuchiya, M. Ogawa:
  "Wigner Monte Carlo Approach to Quantum and Dissipative Transport in Si-MOSFETs";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 79 - 82.
  
  
• K. Kobinata, T. Nakayama:
  "Schottky-barrier change by structural disorders at metal/Si interfaces: First-principles study";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 295 - 298.
  
  
• P. Kulkarni, Q. Liu, A. Khakifirooz, Y. Zhang, K. Cheng, F. Monsieur, P. Oldiges:
  "Impact of Substrate Bias on GIDL for Thin-BOX ETSOI Devices";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 103 - 106.
  
  
• E. Kwon, D. Oh, B. Lee, J.-H. Yi, S. Kim, G. Cho, S. Park, J. Choi:
  "An Abnormal Floating Gate Interference and a Low Program Performance in 2y nm NAND Flash Devices";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 207 - 210.
  
  
• C.-K. Lin, C. Hsiao, W. Chan, M.-C. Jeng:
  "A Smart Approach for Process Variation Correlation Modeling";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 159 - 162.
  
  
• J. Lorenz:
  "TCAD Challenges and some Fraunhofer Solutions";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 1 - 4.
  
  
• A. Malinowski, M. Sekine, M. Hori, K. Ishikawa, H. Kondo, T. Suzuki, T. Takeuchi, H. Yamamoto, A. Jakubowski, L. Lukasiak:
  "Sticking coefficient of hydrogen radicals on ArF photoresist estimated by parallel plate structure in conjunction with numerical analysis";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 235 - 238.
  
  
• A. Martinez, N. Seoane, M. Aldegunde, A. Asenov, J.R. Barker:
  "The Non-Equilibrium Green Function approach as a TCAD tool for future CMOS technology";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 95 - 98.
  
  
• F. Mazzamuto, J. Saint-Martin, V. H. Nguyen, Y. Apertet, C. Chassat, P. Dollfus:
  "Nanostructuration of Graphene Nanoribbons for thermoelectric applications";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 223 - 226.
  
  
• G. Mil´nikov, N. Mori, Y. Kamakura:
  "Low-dimensional Quantum Transport Models in Atomistic Device Simulations";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 315 - 318.
  
  
• H. Minari, T. Zushi, T. Watanabe, Y. Kamakura, N. Mori:
  "Effects of Atomic Disorder on Carrier Transport in Si Nanowire Transistors";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 27 - 30.
  
  
• M. Miyake, S. Kusu, H. Kikuchihara, A. Tanaka, Y. Shintaku, M. Ueno, J. Nakashima, U. Feldmann, H.J. Mattausch, M. Mattausch:
  "The Flexible Compact SOI-MOSFET Model HiSIM-SOI Valid for Any Structural Types";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 167 - 170.
  
  
• Y. Miyoshi, M. Ogawa, S. Souma, H. Nakamura:
  "Analysis of geometrical structure and transport property in InAs/Si heterojunction nanowire tunneling field effect transistors";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 227 - 230.
  
  
• M. Mochizuki, H. Hayashi, S. Ishii, S. Ohira, I. Kurachi, N. Miura:
  "Accurate and global model of SOI H gate body-tied MOSFET for circuit simulator";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 247 - 250.
  
  
• T. Nakahagi, D. Sugiyama, S. Yukuta, M. Miyake, M. Mattausch:
  "Modeling of Enhanced 1/f Noise in TFT with Trap Charges";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 171 - 174.
  
  
• N. Neophytou, H. Kosina:
  "Strong Anisotropy and Diameter Effects on the Low-Field Mobility of Silicon Nanowires";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 31 - 34.
  
  
• T. Numata, S. Uno, Y. Kamakura, N. Mori, K. Nakazato:
  "Fully Analytic Compact Model of Ballistic Gate-All-Around MOSFET with Rectangular Cross Section";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 39 - 42.
  
  
• P. Oldiges, R. Muralidhar, P. Kulkarni, C.-H. Lin, K. Xiu, D. Guo, M. Bajaj, N. Sathaye:
  "Critical Analysis of 14nm Device Options";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 5 - 8.
  
  
• D. Osintsev, V. Sverdlov, A. Makarov, S. Selberherr:
  "Properties of InAs- and Silicon-Based Ballistic Spin Field-Effect Transistors";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 59 - 62.
  
  
• T. Ota, H. Tsuji, Y. Kamakura, K. Taniguchi:
  "Characterization and Modeling of Self-Heating Effect on Transient Current Overshoot in Poly-Si TFTs Fabricated on Glass Substrate";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 255 - 258.
  
  
• V. Peikert, A. Schenk:
  "A Wavelet Method to Solve High-dimensional Transport Equations in Semiconductor Devices";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 299 - 302.
  
  
• D. Rideau, W. Zhang, Y.M. Niquet, C. Delerue, C. Tavernier, H. Jaouen:
  "Electron-phonon scattering in Si and Ge: from bulk to nanodevices";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 47 - 50.
  
  
• F. Roger, J. Cambieri, R. Minixhofer:
  "A Novel Simulation Methodology for Development of ESD Primitives on a 0.18μm Analog, Mixed-Signal High Voltage Process Technology";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 179 - 181.
  
  
• K. Rupp, T. Grasser, A. Jüngel:
  "Adaptive Variable-Order Spherical Harmonics Expansion of the Boltzmann Transport Equation";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 151 - 154.
  
  
• K. Rupp, T. Grasser, A. Jüngel:
  "Parallel Preconditioning for Spherical Harmonics Expansions of the Boltzmann Transport Equation";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 147 - 150.
  
  
• Y. Saitou, T. Nakamori, S. Souma, M. Ogawa:
  "Bridge-Function Pseudospectral Method for Quantum Mechanical Simulation of Nano-Scaled Devices";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 311 - 314.
  
  
• F. Schanovsky, O. Baumgartner, T. Grasser:
  "Multi Scale Modeling of Multi Phonon Hole Capture in the Context of NBTI";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 15 - 18.
  
  
• A. Schenk, R. Rhyner, M. Luisier, C. Bessire:
  "Analysis of Si, InAs, and Si-InAs Tunnel Diodes and Tunnel FETs Using Different Transport Models";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 263 - 266.
  
  
• A. Scholze, S. Furkay, S.-D. Kim, S. Jain:
  "Exploring MOL Design Options for a 20nm CMOS Technology using TCAD";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 99 - 102.
  
  
• C. Shen, D. Gong:
  "Inverse Modeling of sub-100nm MOSFET with PDE-Constrained Optimization";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 155 - 158.
  
  
• C. Shen, Y. Li, I. Lo, P. Lin, S. Chung:
  "Modeling Temperature and Bias Stress Effects on Threshold Voltage for a-Si:H TFTs for Gate Driver Circuit Simulation";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 251 - 254.
  
  
• X. Shen, S. Chong, D. Lee, R. Parsa, R. Howe, W. Wong:
  "2D Analytical Model for the Study of NEM Relay Device Scaling";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 243 - 246.
  
  
• S. Sho, S. Odanaka:
  "Numerical Methods for A Quantum Energy Transport Model Arising in Scaled MOSFETs";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 303 - 306.
  
  
• K. Sonoda, M. Tanizawa, K. Ishikawa, Y. Inoue:
  "Modeling Statistical Distribution of Random Telegraph Noise Magnitude";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 19 - 22.
  
  
• Z. Stanojevic, M. Karner, K. Schnass, C. Kernstock, O. Baumgartner, H. Kosina:
  "A Versatile Finite Volume Simulator for the Analysis of Electronic Properties of Nanostructures";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 143 - 146.
  
  
• I. Starkov, H. Ceric, S. Tyaginov, T. Grasser, H. Enichlmair, J. Park, C. Jungemann:
  "Analysis of Worst-Case Hot-Carrier Degradation Conditions in the Case of n- and p-channel High-Voltage MOSFETs";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 127 - 130.
  
  
• H. Takashino, M. Tanizawa, T. Okagaki, T. Hayashi, M. Taya, H. Ishida, K. Ishikawa, Y. Inoue:
  "Impact of Quantum Confinement on Stress induced nMOSFET Threshold Voltage Shift";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 107 - 110.
  
  
• F. Torricelli, L. Colalongo, L. Milani, Z.M. Kovacs-Vajna, E. Cantatore:
  "Impact of Energetic Disorder and Localization on the Conductivity and Mobility of Organic Semiconductors";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 195 - 198.
  
  
• H. Toshiyoshi:
  "A Spice-based Multi-physics Simulation Technique for Integrated MEMS";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 239 - 242.
  
  
• S. Tyaginov, I. Starkov, O. Triebl, H. Ceric, T. Grasser, H. Enichlmair, J. Park, C. Jungemann:
  "Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 123 - 126.
  
  
• W.G. Vandenberghe, B. Soree, W. Magnus, G. Groeseneken, A.S. Verhulst, M.V. Fischetti:
  "Field Induced Quantum Confinement in Indirect Semiconductors: Quantum Mechanical and Modified Semiclassical Model";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 271 - 274.
  
  
• J. Weinbub, J. Cervenka, K. Rupp, S. Selberherr:
  "High-Quality Mesh Generation Based on Orthogonal Software Modules";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 139 - 142.
  
  
• X. Xiu:
  "Simulation of Channel Electron Mobility Due to Scattering with Interfacial Phonon-Plasmon Modes in Silicon Nanowire under the Presence of High-k Oxide and Metal Gate";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 35 - 38.
  
  
• K. Yamaguchi, A. Otake, K. Kamiya, K. Shiraishi, Y. Shigeta:
  "First Principle Study of the Stability of H Atoms in SiN Layers on MONOS-Type Memories During Program/Erase Operations";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 215 - 218.
  
  
• J. You, H. Kim, T. Kim, K. Lee:
  "Effect of the trap density and distribution of the silicon nitride layer on the retention characteristics of charge trap flash memory devices";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 199 - 202.
  
  
• X. Yu, J. Zhang, J. Kang, Z. Yu, Y. Tan:
  "Study on Carrier Mobility in Graphene Nanoribbons";
  Poster: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 219 - 222.
  
  
• Z. Yuan, A. Nainani, X. Guan, W. Wong, K.C. Saraswat:
  "Tight-binding Study of Γ-L Bandstructure Engineering for Ballistic III-V nMOSFETs";
  Talk: Conference, Osaka, Japan; 2011-09-08 - 2011-09-10; in: "Proc. of SISPAD", (2011), 71 - 74.