SISPAD 2010 Proceedings

• E. Bär, D. Kunder, P. Evanschitzky, J. Lorenz:
  "Coupling of Equipment Simulation and Feature-Scale Profile Simulation for Dry-Etching of Polysilicon Gate Lines";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 57 - 60.
  
  
• E. Bär, D. Kunder, J. Lorenz, M. Sekowski, U. Paschen:
  "Coupling of Monte Carlo Sputter Simulation and Feature-Scale Profile Simulation and Application to the Simulation of Back Etching of an Intermetal Dielectric";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 53 - 56.
  
  
• F.M. Bufler, A. Erlebach, M. Oulmane:
  "Symmetry Reduction by Surface Scattering and Mobility Model for Stressed <100>/(001) MOSFETs";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 275 - 278.
  
  
• H. Carrillo-Nunez, W. Magnus, F.M. Peeters:
  "A Non-Linear Variational Principle for the Self-Consistent Solution of Poisson´s Equation and a Transport Equation in the Local Density Approximation";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 171 - 174.
  
  
• H. Ceric, R.L. de Orio, S. Selberherr:
  "Impact of Parameter Variability on Electromigration Lifetime Distribution";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 217 - 220.
  
  
• W.-Y. Chen, T.-H. Yu, T. Ohtou, Y. Sheu, J. Wu, C. Liu:
  "Halo Profile Engineering to Reduce Vt Fluctuation in High-K/Metal-Gate nMOSFET";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 145 - 148.
  
  
• X. Cheng, Y. Wang:
  "Simulation of Three Dimensional Grain Growth for Cu-Interconnects";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 23 - 26.
  
  
• M. Claus, S. Mothes, M. Schröter:
  "Modeling of NQS Effects in Carbon Nanotube Transistors";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 203 - 206.
  
  
• N. Dehdashti, A. Kranti, I. Ferain, C.-W. Lee, R. Yan, P. Razavi, R. Yu, J.-P. Colinge:
  "Dissipative Transport in Multigate Silicon Nanowire Transistors";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 97 - 100.
  
  
• O. Ertl, L. Filipovic, S. Selberherr:
  "Three-Dimensional Simulation of Focused Ion Beam Processing Using the Level Set Method";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 49 - 52.
  
  
• G. Ferrari, A. Ghetti, D. Ielmini, A. Redaelli, A. Pirovano:
  "Multiphysics Modeling of PCM Devices for Scaling Investigation";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 265 - 268.
  
  
• E. Gnani, A. Gnudi, S. Reggiani, G. Baccarani:
  "Steep-Slope Nanowire Field-Effect Transistor (SS-NWFET)";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 69 - 72.
  
  
• J. Hattori, S. Uno, N. Mori, K. Nakazato:
  "A Theoretical Study of Effect of Gate Voltage on Electron-Modulated-Acoustic-Phonon Interactions in Silicon Nanowire MOSFETs";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 93 - 96.
  
  
• Y. He, R.H. Scheicher, A. Grigoriev, R. Ahuja, S. Long, Z. Ji, Z. Yu, M. Liu:
  "Fast DNA Sequencing via Transverse Differential Conductance";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 313 - 316.
  
  
• S.-M. Hong, C. Jungemann:
  "Inclusion of the Pauli Principle in a Deterministic Boltzmann Equation Solver for Semiconductor Devices";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 135 - 138.
  
  
• V. P.-H. Hu, M.-L. Fan, C.-Y. Hsieh, P. Su, C.-T. Chuang:
  "FinFET SRAM Cell Optimization Considering Temporal Variability due to NBTI/PBTI and Surface Orientation";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 269 - 272.
  
  
• G. Iannaccone, A. Betti, G. Fiori:
  "Transport and Noise Properties of Graphene-Based Transistors Revealed Through Atomistic Modelling";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 3 - 6.
  
  
• T. Ichikawa, D. Ichinose, K. Kawabata, N. Tamaoki:
  "Topography Simulation of BiCS Memory Hole Etching Modeled by Elementary Experiments of SiO₂ and Si Etching";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 45 - 48.
  
  
• H. Iwai, K. Natori, K. Kakushima, P. Ahmet, A. Oshiyama, K. Shiraishi, J.-I. Iwata, K. Yamada, K. Ohmori:
  "Si Nanowire Device and its Modeling";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 63 - 66.
  
  
• M.-A. Jaud, P. Scheiblin, S. Martinie, M. Casse, O. Rozeau, J. Dura, J. Mazurier, A. Toffoli, O. Thomas, F. Andrieu, O. Weber:
  "TCAD Simulation vs. Experimental Results in FDSOI Technology: From Advanced Mobility Modeling to 6T-SRAM Cell Characteristics Prediction";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 283 - 286.
  
  
• X. Ji, M. Gao, Y. Wang:
  "First-Principle Calculation for Luminescent-Effects of Si and Zn Impurities in GaN";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 41 - 42.
  
  
• Y. Kamakura, N. Mori, K. Taniguchi, T. Zushi, T. Watanabe:
  "Coupled Monte Carlo Simulation of Transient Electron-Phonon Transport in Nanoscale Devices";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 89 - 92.
  
  
• C. Kampen, P. Evanschitzky, A. Burenkov, J. Lorenz:
  "Lithography Induced Layout Variations in 6-T SRAM Cells";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 149 - 152.
  
  
• S.-D. Kim, S. Jain, H. Rhee, A. Scholze, M. Yu, S.C. Lee, S. Furkay, M. Zorzi, F.M. Bufler, A. Erlebach:
  "Modeling Gate-Pitch Scaling Impact on Stress-Induced Mobility and External Resistance for 20nm-Node MOSFETs";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 79 - 82.
  
  
• Y.- H. Kim, J.-W. Jeon, Y.-U. Jang, Y.-H. Park, G.-Y. Yang, Y.-K. Park, M.-H. Yoo, C.-H. Chung:
  "Compact Process and Layout Aware Model for Variability Optimization of Circuit in Nanoscale CMOS";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 141 - 144.
  
  
• G.S. Kliros, P.C. Divari:
  "Fabry-Perot Oscillations in the Thermopower of Ballistic Graphene Ribbons";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 29 - 32.
  
  
• U. Kovac, D. Dideban, B. Cheng, N. Moezi, G. Roy, A. Asenov:
  "A Novel Approach to the Statistical Generation of Non-Normal Distributed PSP Compact Model Parameters using a Nonlinear Power Method";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 125 - 128.
  
  
• W. Lee, U. Ravaioli:
  "A Simple and Efficient Method for the Calculation of Carrier-Carrier Scattering in Monte-Carlo Simulations";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 131 - 134.
  
  
• A. Makarov, V. Sverdlov, S. Selberherr:
  "Stochastic Modeling Hysteresis and Resistive Switching in Bipolar Oxide-Based Memory";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 237 - 240.
  
  
• G. Matz, S.-M. Hong, C. Jungemann:
  "Spherical Harmonics Expansion of the Conduction Band for Deterministic Simulation of SiGe HBTs with Full Band Effects";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 167 - 170.
  
  
• B. Meinerzhagen, A.T. Pham, S.-M. Hong, C. Jungemann:
  "Solving Boltzmann Transport Equation without Monte-Carlo Algorithms - New Methods for Industrial TCAD Applications";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 293 - 296.
  
  
• H. Minari, T. Kitayama, M. Yamamoto, N. Mori:
  "Strain Effects on Hole Current in Silicon Nanowire FETs";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 207 - 210.
  
  
• A. Nainani, Z. Yuan, T. Krishnamohan, K. Saraswat:
  "Optimal Design of III-V Heterostructure MOSFETs";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 103 - 106.
  
  
• C. D. Nguyen, A. Kuligk, M.I. Vexler, M. Klawitter, V. Beyer, T. Melde, M. Czernohorsky, B. Meinerzhagen:
  "Detailed Physical Simulation of Program Disturb Mechanisms in Sub-50 nm NAND Flash Memory Strings";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 261 - 264.
  
  
• V. H. Nguyen, A. Bournel, C. Chassat, P. Dollfus:
  "Quantum Transport of Dirac Fermions in Graphene Field Effect Transistors";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 9 - 12.
  
  
• M. Niessner, G. Schrag, G. Wachutka, J. Iannacci:
  "Modeling and Fast Simulation of RF-MEMS Switches within Standard IC Design Frameworks";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 317 - 320.
  
  
• K. Nishi, M. Mochizuki, H. Hayashi, K. Fukuda, I. Kurachi:
  "Proposal of a Point-Source Model for Highly-Accurate Analytical 3D Calculation of Ion Implanted Dopant Profiles";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 193 - 196.
  
  
• T. Okada, H. Yoshimura, H. Aikawa, M. Sengoku, O. Fujii, H. Oyamatsu:
  "A Comparative 3D Simulation Approach with Extensive Experimental Vt/Avt Data and Analysis of LER/RDF/Reliability of CMOS SRAMs at 40-nm Node and Beyond";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 121 - 124.
  
  
• A. Padovani, L. Larcher:
  "A Novel Algorithm for the Solution of Charge Transport Equations in MANOS Devices Including Charge Trapping in Alumina and Temperature Effects";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 229 - 232.
  
  
• F. Pan, V. Subramanian:
  "A Kinetic Monte Carlo Study on the Dynamic Switching Properties of Electrochemical Metallization RRAMs During the SET Process";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 19 - 22.
  
  
• Z. Pan, S. Holland, D. Schroeder, W.H. Krautschneider:
  "Improved Impact-Ionization Modelling and Validation with pn-Junction Diodes";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 287 - 290.
  
  
• A. Paussa, F. Conzatti, D. Breda, R. Vermiglio, D. Esseni:
  "Pseudo-Spectral Method for the Modelling of Quantization Effects in Nanoscale MOS Transistors";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 299 - 302.
  
  
• S. Poli, S. Reggiani, G. Baccarani, E. Gnani, A. Gnudi, M. Denison, S. Pendharkar, R. Wise:
  "Numerical Investigation of the Total SOA of Trench Field-Plate LDMOS Devices";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 111 - 114.
  
  
• S.K. Possanner, N.B. Abdallah:
  "Spin-Transfer Torques: Self-Consistent Solution of the Spin-Diffusion Equation and the Landau-Lifshitz Equation";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 37 - 40.
  
  
• M. Rudan, F. Giovanardi, T. Tsafack, F. Xiong, E. Piccinini, F. Buscemi, A. Liao, E. Pop, R. Brunetti, C. Jacoboni:
  "Modeling of the Voltage Snap-Back in Amorphous-GST Memory Devices";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 257 - 260.
  
  
• M. Rudan, A. Gnudi, E. Gnani, S. Reggiani, G. Baccarani:
  "Improving the Accuracy of the Schrödinger-Poisson Solution in CNWs and CNTs";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 307 - 310.
  
  
• K. Rupp, T. Grasser, A. Jüngel:
  "System Matrix Compression for Spherical Harmonics Expansions of the Boltzmann Transport Equation";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 159 - 162.
  
  
• T. Sadi, J.-L. Thobel, F. Dessenne:
  "Microscopic Simulation of Electron Transport and Self-Heating Effects in InAs Nanowire MISFETs";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 107 - 110.
  
  
• H. Sakamoto, T. Iizuka:
  "Proposal of a Fitting Accuracy Metric suitable for Compact Model Qualification in all MOSFET Operation Regions";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 251 - 254.
  
  
• N. Sano:
  "Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 177 - 180.
  
  
• G. Sasso, N. Rinaldi, G. Matz, C. Jungemann:
  "Analytical Models of Effective DOS, Saturation Velocity and High-Field Mobility for SiGe HBTs Numerical Simulation";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 279 - 282.
  
  
• A. Savio, A. Poncet:
  "Study of the Wigner Function Boundary Conditions at Different Barrier Heights";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 163 - 166.
  
  
• A. Schmidt, I. Jang, T. Kim, K.-H. Lee, Y.-K. Park, M.-H. Yoo, C.-H. Chung:
  "Compact Process Model of Temperature Dependent Amorphization Induced by Ion Implantation";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 197 - 200.
  
  
• M. Shi, J. Saint-Martin, A. Bournel, P. Dollfus:
  "Schrödinger-Poisson and Monte Carlo Analysis of III-V MOSFETs for High Frequency and Low Consumption Applications";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 83 - 86.
  
  
• G. Spadini, I.V. Karpov, D.L. Kencke:
  "Future High Density Memories for Computing Applications: Device Behavior and Modeling Challenges";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 223 - 226.
  
  
• A.J. Strojwas:
  "Cost-Effective Variability Reduction Approaches to Enable Future Technology Nodes";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 117 - 118.
  
  
• K. Suzuki, T. Inoue, H. Miura:
  "Improvement of the Interface Integrity between a High-k Dielectric Film and a Metal Gate Electrode by Controlling Point Defects and Residual Stress";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 213 - 216.
  
  
• A. Tanaka, Y. Oritsuki, H. Kikuchihara, M. Miyake, H.J. Mattausch, M. Mattausch, Y. Liu, K. Green:
  "Modeling of 2D Bias Control in Overlap Region of High-Voltage MOSFETs for Accurate Device/Circuit Performance Prediction";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 243 - 246.
  
  
• T.T. Trang Nghiêm, V. Aubry-Fortuna, C. Chassat, A. Bosseboeuf, P. Dollfus:
  "Giant Piezoresistance Effect in p-type Silicon";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 321 - 324.
  
  
• F. Troni, F. Dodi, G. Sozzi, R. Menozzi:
  "Modeling of Thin-Film Cu(In,Ga)Se² Solar Cells";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 33 - 36.
  
  
• C.-C. Wang, Y. Ye, Y. Cao:
  "Compact Modeling of Fe-FET and Implications on Variation-Insensitive Design";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 247 - 250.
  
  
• Z. Xia, D.S. Kim, J.-Y. Lee, K.-H. Lee, Y.-K. Park, M.-H. Yoo, C. Chung:
  "Investigation of Charge Loss Mechanisms in Planar and Raised STI Charge Trapping Flash Memories";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 233 - 236.
  
  
• Y. Yang, G. Du, R. Han, X. Liu:
  "Variability in Nano-scale Intrinsic Silicon-on-Thin-Box MOSFETs (SOTB MOSFETs)";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 183 - 186.
  
  
• C.-H. Yu, M.-H. Han, H.-W. Cheng, Z.-C. Su, Y. Li, H. Watanabe:
  "Statistical Simulation of Metal-Gate Work-Function Fluctuation in High-κ/Metal-Gate Devices";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 153 - 156.
  
  
• T. Yu, R. Wang, R. Huang:
  "Simulation of Line-Edge Roughness Effects in Silicon Nanowire MOSFETs";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 187 - 190.
  
  
• X. Yu, J. Kang, J. Zhang, L. Tian, Z. Yu:
  "Improving Channel Mobility in Graphene-FETs by Minimizing Surface Phonon Scattering - A Simulation Study";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 13 - 16.
  
  
• K. Zhao, S.-M. Hong, C. Jungemann, R.-Q. Han:
  "Stable Implementation of a Deterministic Multi-Subband Boltzmann Solver for Silicon Double-Gate nMOSFETs";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 303 - 306.
  
  
• T. Zushi, I. Ohdomari, T. Watanabe, Y. Kamakura, K. Taniguchi:
  "Molecular Dynamics Simulation on LO Phonon Mode Decay in Si Nano-Structure Covered with Oxide Films";
  Talk: Conference, Bologna, Italy; 2010-09-06 - 2010-09-08; in: "Proc. of SISPAD", (2010), 73 - 76.