SISPAD 2009 Proceedings

• A. Afzalian, C.-W. Lee, N.D. Akhavan, R. Yan, I. Ferain, P. Razavi, J.-P. Colinge:
  "A new F(ast)-CMS Algorithm for Efficient Three-Dimensional NEGF Simulations of Arbitrarily Shaped Silicon Nanowire MUGFETs";
  Poster: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 237 - 240.
  
  
• A. Akturk, M. Peckerar, M. Dornajafi, N. Goldsman, K. Eng, T. Gurrieri, M.S. Carroll:
  "Impact Ionization and Freeze-Out Model for Simulation of Low Gate Bias Kink Effect in SOI-MOSFETs Operating at Liquid He Temperature";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 147 - 150.
  
  
• M.G. Ancona, J.B. Boos, B.R. Bennett:
  "Using Density-Gradient Theory to Model Sb-Based p-Channel FETs";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 75 - 78.
  
  
• D. Basu, J. Guha, P. Hatab, P. Vaidyanathan, C. Mouli:
  "Using TCAD, Response Surface Model and Monte Carlo Methods to Model Processes and Reduce Device Variation";
  Poster: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 253 - 256.
  
  
• D. Basu, L.F. Register, M.J. Gilbert, S.K. Banerjee:
  "Atomistic simulation of band-to-band tunneling in III-V nanowire field-effect transistors";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 186 - 189.
  
  
• C. Berti, S. Furini, S. Cavalcanti, E. Sangiorgi, C. Fiegna:
  "Particle-based simulation of conductance of solid-state nanopores and ion channels";
  Poster: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 301 - 304.
  
  
• W.Z. Cai, B. Gogoi, R. Davies, D. Lutz, D. Rice, G.H. Loechelt, G. Grivna:
  "TCad Analysis of a Vertical RF Power Transistor";
  Poster: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 249 - 252.
  
  
• H. Ceric, R.L. de Orio, J. Cervenka, S. Selberherr:
  "Copper Microstructure Impact on Evolution of Electromigration Induced Voids";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 178 - 181.
  
  
• C.-Y. Chen, J. Liu, J. Kim, R.W. Dutton:
  "Lateral Ge/SiGe/Si hetero-channel p-type MOSFETs";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 21 - 22.
  
  
• H. Chen, L.F. Register, S.K. Banerjee:
  "Resonant Injection Enhanced Field Effect Transistor for Low Voltage Switching: Concept and Quantum Transport Simulation";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 63 - 66.
  
  
• B. Cheng, N. Moezi, D. Dideban, G. Roy, S. Roy, A. Asenov:
  "Benchmarking the Accuracy of PCA Generated Statistical Compact Model Parameters Against Physical Device Simulation and Directly Extracted Statistical Parameters";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 143 - 146.
  
  
• M.H. Cho, C. Shin, T-J.K. Liu:
  "Convex Channel Design for Improved Capacitorless DRAM Retention Time";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 43 - 46.
  
  
• S.W. Choi, S. Park, H.-H. Park, Y.J. Park, C.-K. Baek:
  "Simulation on NBTI degradation due to discrete interface traps considering local mobility model and its statistical effects";
  Poster: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 273 - 276.
  
  
• D.J. Cummings, M.E. Law, S. Cea, T. Linton:
  "Comparison of Discretization Methods for Device Simulation";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 119 - 122.
  
  
• R.L. de Orio, H. Ceric, J. Cervenka, S. Selberherr:
  "The Effect of Copper Grain Size Statistics on the Electromigration Lifetime Distribution";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 182 - 185.
  
  
• O. Ertl, S. Selberherr:
  "A Fast Void Detection Algorithm for Three-Dimensional Deposition Simulation";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 174 - 177.
  
  
• M.G. Ertosun, K.C. Saraswat:
  "Characteristics of the Capacitorless Double Gate Quantum Well Single Transistor DRAM";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 35 - 38.
  
  
• Y. Gawlina, L. Borucki, G. Georgakos, G. Wachutka:
  "Transient 3D Simulation of Single Event Latchup in Deep Submicron CMOS-SRAMs";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 206 - 209.
  
  
• E. Gnani, A. Gnudi, S. Reggiani, G. Baccarani:
  "An investigation on Effective Mobility in Nanowire FETs under Quasi-Ballistic Conditions";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 226 - 229.
  
  
• W. Gös, T. Grasser, M. Karner, B. Kaczer:
  "A Model for Switching Traps in Amorphous Oxides";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 159 - 162.
  
  
• M. Gupta, S. Bhardwaj, J. Kwon, V. Gopinath:
  "SPICE Modeling of Self Sustained Operation (SSO) to Program Sub-90nm Floating Body Cells.";
  Poster: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 293 - 296.
  
  
• C. Heitzinger, N. Mauser, C. Ringhofer, Y. Liu, R.W. Dutton:
  "Modeling and Simulation of Orientation-Dependent Fluctuations in Nanowire Field-Effect Biosensors using the Stochastic Linearized Poisson-Boltzmann Equation";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 86 - 90.
  
  
• S.-M. Hong, C. Jungemann:
  "Investigation of the Noise Performance of Double-Gate MOSFETs by Deterministic Simulation of the Boltzmann Equation";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 103 - 106.
  
  
• C.-H. Hwang, T.-Y. Li, M.-H. Han, K.-F. Lee, H.-W. Cheng, Y. Li:
  "Statistical Analysis of Metal Gate Workfunction Variability, Process Variation, and Random Dopant Fluctuation in Nano-CMOS Circuits";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 99 - 102.
  
  
• D. Ielmini:
  "Overview of modeling approaches for scaled non volatile memories";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 9 - 16.
  
  
• T. Inoue, K. Suzuki, H. Miura:
  "Quantum Chemical Molecular Dynamics Study of Degradation Mechanism of Interface Integrity between a HfO_{2} Thin Film and a Metal Gate Electrode";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 198 - 201.
  
  
• S. Jin, A. Wettstein, W. Choi, F.M. Bufler, E. Lyumkis:
  "Gate Current Calculations Using Spherical Harmonic Expansion of Boltzmann Equation";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 202 - 205.
  
  
• T. Kurusu, M. Wada, N. Matsunaga, H. Tanimoto, N. Aoki, Y. Toyoshima, H. Shibata:
  "Compact and Efficient Monte Carlo Method to Reproduce Size Effect on Resistivity in Sub-0.1μm Metallic Interconnects";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 170 - 173.
  
  
• D.D. Lu, C.-H. Lin, S. Yao, W. Xiong, F. Bauer:
  "Design of FinFET SRAM Cells using a Statistical Compact Model";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 127 - 130.
  
  
• M. Luisier, G. Klimeck:
  "Investigation of In_xGa_1-xAs Ultra-Thin-Body Tunneling FETs using a Full-Band and Atomistic Approach";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 67 - 70.
  
  
• A. Martinez, A. R. Brown, A. Asenov, N. Seoane:
  "A comparison between a fully-3D real-space versus coupled mode-space NEGF in the study of variability in gate-all-around Si nanowire MOSFET";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 194 - 197.
  
  
• S. Martinie, E. Sarrazin, D. Munteanu, S. Barraud, G.L. Carval, J.-L. Autran:
  "Compact Modeling of Quasi-Ballistic Transport and Quantum Mechanical Confinement in Nanowire MOSFETs: Circuit Performances Analysis";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 139 - 142.
  
  
• M. Michaillat, D. Rideau, F. Aniel, C. Tavernier, H. Jaouen:
  "Monte Carlo-Based Analytical Models for Electron and Hole Electrical Parameters in Strained SiGeC Alloys";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 55 - 58.
  
  
• H. Minari, N. Mori:
  "Comparative Study on Si and Ge p-type Nanowire FETs based on Full-Band Non-Equilibrium Green´s Function Simulation";
  Poster: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 265 - 268.
  
  
• S. Muraoka, R. Mukai, S. Souma, M. Ogawa:
  "2D Quantum Mechanical Simulation of Gate-Leakage Current in Double-Gate n-MOSFETs";
  Poster: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 297 - 300.
  
  
• T. Nagumo, K. Takeuchi, S. Kumashiro, Y. Hayashi:
  "Adding Physical Scalability to BSIM4 by Meta-Modeling of Fitting Parameters";
  Poster: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 269 - 272.
  
  
• A. Nainani, D. Kim, T. Krishnamohan, K.C. Saraswat:
  "Hole Mobility and its enhancement with Strain for technologically relevant III-V semiconductors";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 47 - 50.
  
  
• N. Neophytou, H. Kosina, S. Selberherr:
  "Dependence of Injection Velocity and Capacitance of Si Nanowires on Diameter, Orientation, and Gate Bias: An Atomistic Tight-Binding Study";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 71 - 74.
  
  
• H.-N. Nguyen, S. Retailleau, D. Querlioz, A. Bournel, P. Dollfus:
  "Monte Carlo study of ambipolar transport and quantum effects in carbon nanotube transistors";
  Poster: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 277 - 280.
  
  
• P. Patel, K. Jeon, A. Bowonder, C. Hu:
  "A Low Voltage Steep Turn-Off Tunnel Transistor Design";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 23 - 26.
  
  
• A. Pawlak, M. Schröter, J. Krause, G. Wedel, C. Jungemann:
  "On the feasibility of 500 GHz Silicon-Germanium HBTs";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 27 - 30.
  
  
• A.T. Pham, C. Jungemann, B. Meinerzhagen:
  "A convergence enhancement method for deterministic multisubband device simulations of double gate PMOSFETs";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 115 - 118.
  
  
• E. Piccinini, F. Buscemi, T. Tsafack, M. Rudan, R. Brunetti, C. Jacoboni:
  "Investigation of Charge Transport in Amorphous Ge_{2}Sb_{2}Te_{5} Using the Variable-Range Hopping Model";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 230 - 233.
  
  
• S. Poli, M.G. Pala:
  "Full quantum investigation of low field mobility in short-channel Silicon nanowire FETs";
  Poster: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 285 - 288.
  
  
• J. Postel-Pellerin, F. Lalande, P. Canet, R. Bouchakour, F. Jeuland, B. Bertello, B. Villard:
  "TCAD investigation of abnormal degradation of inhibited cells in NAND Flash Structures";
  Poster: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 234 - 236.
  
  
• S. Pothare, A. Akturk, N. Goldsman, A. Lelis, S. Dhar, S.-H. Ryu, A. Agarwal:
  "Modeling the Effect of Conduction Band Density of States on Interface Trap Occupation and its Influence on 4H-SiC MOSFET Performance";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 151 - 154.
  
  
• J.G. Rollins:
  "CAD based Interconnect Analysis";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 163 - 169.
  
  
• A.M. Roy, D. Nikonov, K.C. Saraswat:
  "Conductivity Mismatch and Voltage Dependence of Magnetoresistance in a Semiconductor Spin Injection and Detection Structure";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 17 - 20.
  
  
• K.C. Sahoo, Y. Li, E.Y. Chang, M.-K. Lin, J.-H. Huang:
  "Reflectance of Sub-Wavelength Structure on Silicon Nitride for Solar Cell Application";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 123 - 126.
  
  
• H. Sakamoto, H. Arimoto, H. Masuda, S. Funayama, S. Kumashiro:
  "A Discrete Surface Potential Model which Accurately Reflects Channel Doping Profile and its Application to Ultra-Fast Analysis of Random Dopant Fluctuation";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 95 - 98.
  
  
• T. Sakuda, N. Sadachika, Y. Oritsuki, M. Yokomichi, M. Miyake, T. Kajiwara, H. Kikuchihara, U. Feldmann, H.J. Mattausch, M. Mattausch:
  "Effect of Impact-Ionization-Generated Holes on the Breakdown Mechanism in LDMOS Devices";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 214 - 217.
  
  
• G. Sasso, N. Rinaldi, G. Matz, C. Jungemann:
  "Accurate Mobility and Energy Relaxation Time Models for SiGe HBTs Numerical Simulation";
  Poster: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 241 - 244.
  
  
• A. Satou, F.T. Vasko, T. Otsuji, V. Ryzhii:
  "Population inversion and negative dynamic conductivity in optically pumped graphene";
  Poster: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 261 - 264.
  
  
• A. Schenk:
  "Scalability Study of Floating Body Memory Cells";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 31 - 34.
  
  
• N. Shi, L.F. Register, S.K. Banerjee:
  "Semiclassical Monte Carlo with quantumconfinement enhanced scattering";
  Poster: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 257 - 260.
  
  
• C. Shin, Y. Tsukamoto, X. Sun, T-J.K. Liu:
  "Full 3D Simulation of 6T-SRAM Cells for the 22nm Node";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 39 - 42.
  
  
• M.C. Smayling, V. Axelrad:
  "Simulation-Based Lithography Optimization for Logic Circuits at 22nm and Below";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 111 - 114.
  
  
• K. Suzuki, K. Imasaki, Y. Ito, H. Miura:
  "Strain Dependence of Dielectric Properties and Reliability of High-k Thin Films";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 59 - 62.
  
  
• V. Sverdlov, O. Baumgartner, T. Windbacher, F. Schanovsky, S. Selberherr:
  "Thickness Dependence of the Effective Masses in a Strained Thin Silicon Film";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 51 - 54.
  
  
• K. Takeuchi, A. Nishida, T. Hiramoto:
  "Random Fluctuations in Scaled MOS Devices";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 79 - 85.
  
  
• K. Tanaka, H. Nakamura, T. Uemura, K. Takeuchi, T. Fukuda, S. Kumashiro:
  "Study on Influence of Device Structure Dimensions and Profiles on Charge Collection Current Causing SET Pulse Leading to Soft Errors in Logic Circuits";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 210 - 213.
  
  
• F. Torricelli, Z.M. Kovacs-Vajna, L. Colalongo:
  "Unified Mobility Model for Amorphous Organic Materials";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 218 - 221.
  
  
• C.-C. Wang, W. Zhao, F. Liu, M. Chen, Y. Cao:
  "Compact Modeling of Stress Effects in Scaled CMOS";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 131 - 134.
  
  
• H. Watanabe, K. Kawabata, T. Ichikawa:
  "Trial application of tight-binding method to Si-cluster surrounded by SiO2 in optimized atomistic network";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 190 - 193.
  
  
• W. Wong, L. Wei, S. Oh, A. Lin, J. Deng, S. Chong, K. Akarvarda:
  "Technology Projection Using Simple Compact Models";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 1 - 8.
  
  
• W. Xiong, J. Zhang, Y. Wang, Z. Yu:
  "A Gradient-Based Inverse Lithography Technology for Double-Dipole Lithography";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 107 - 110.
  
  
• H. Xu, Y. He, C. Fan, Y. Zhao, G. Du, J. Kang, R. Han, X. Liu:
  "Impact of Thickness and Deposition Temperature of Gate Dielectric on Valence Bands in Silicon Nanowires";
  Poster: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 245 - 248.
  
  
• N. Xu, X. Sun, L. Wang, A. Neureuther, T-J.K. Liu:
  "Predictive Compact Modeling for Strain Effects in Nanoscale Transistors";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 135 - 138.
  
  
• L. Yang, X. Li, L. Tian, Z. Yu:
  "Simulation of Layout-Dependent STI Stress and Its Impact on Circuit Performance";
  Poster: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 281 - 284.
  
  
• T.-H. Yu, T. Ohtou, K.-M. Liu, W.-Y. Chen, Y.-P. Hu, C.-F. Cheng, Y. Sheu:
  "Modeling and Optimization of Variability in High-k/Metal-Gate MOSFETs";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 91 - 94.
  
  
• T.-H. Yu, K.-C. Tu, Y. Sheu, C.H. Diaz:
  "Integrated Stress and Process Calibration in Strained-Si Devices";
  Poster: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 289 - 292.
  
  
• L. Zeng, X.-Y. Liu, G. Du, J.F. Kang, R.Q. Han:
  "Evaluation of Mobility in Graphene Nanoribbons Including Line Edge Roughness Scattering";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 222 - 225.
  
  
• H. Zhang, B. Gao, S. Yu, L. Lai, L. Zeng, B. Sun, L. Liu, X. Liu, J. Lu, R. Han, J. Kang:
  "Effects of Ionic Doping on the Behaviors of Oxygen Vacancies in HfO_{2} and ZrO_{2}: A First Principles Study";
  Talk: Conference, San Diego, USA; 2009-09-09 - 2009-09-11; in: "Proc. of SISPAD", (2009), 978-1-4244-3947-8; 155 - 158.