SISPAD 2008 Proceedings

• A. Akturk, N. Goldsman:
  "Unusually Strong Temperature Dependence of Graphene Electron Mobility";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 173 - 176.
  
  
• A. Akturk, N. Goldsman, S. Aslam, J. Sigwarth, F. Herrero:
  "Numerical Modeling and Design of Single Photon Counter 4H-SiC Avalanche Photodiodes";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 201 - 204.
  
  
• A. Akturk, N. Goldsman, H. Pandana, J. Khan:
  "Numerical Modeling of a Deoxyribonucleic Acid Microassay: Carbon Nanotube Thin Film Transistor Sensor";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 93 - 96.
  
  
• M. Aldegunde, A. Garcia-Loureiro, A. Martinez, K. Kalna:
  "3D Monte Carlo Simulation of Tri-Gate MOSFETs Using Tetrahedral Finite Elements";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 153 - 156.
  
  
• M.G. Ancona:
  "Simulation of Single and Multilayer Graphene Field Effect Devices";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 169 - 172.
  
  
• M.G. Ancona, A. Svizhenko:
  "Physics of Tunneling from a Macroscopic Perspective";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 361 - 364.
  
  
• G. Baccarani, E. Gnani, A. Gnudi, S. Reggiani:
  "Quasi-Ballistic Transport in Nanowire Field Effect Transistors";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 5 - 8.
  
  
• C.-K. Baek, W.-S. Choi, H.-H. Park, S.-M. Hong, C.H. Park:
  "A Unified Approach for the Reliability Modeling of MOSFETs";
  Talk: Conference, Hakone, Japan (invited); 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 61 - 64.
  
  
• J.R. Barker:
  "2D/3D NEGF Modeling of the Impact of Random Dopants: Dopant Aggregation in Silicon Nanotransistors";
  Talk: Conference, Hakone, Japan (invited); 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 337 - 340.
  
  
• O. Baumgartner, M. Karner, H. Kosina:
  "Modeling of High-K Metal Gate Stacks Using the Non-Equilibrium Green´s Function Formalism";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 353 - 356.
  
  
• O. Baumgartner, P. Schwaha, M. Karner, M. Nedjalkov, S. Selberherr:
  "Coupling of Non-Equilibrium Green´s Function and Wigner Function Approaches";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 345 - 348.
  
  
• S. Brugger, V. Peikert, A. Schenk:
  "Coupling the Monte Carlo Method with Semi-Analytical Solutions of the Boltzmann Transport Equation";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 297 - 300.
  
  
• A. Calderoni, P. Fantini, A. Ghetti, A. Marmiroli:
  "Modeling the V_TH Fluctuations in Nanoscale Floating Gate Memories";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 49 - 52.
  
  
• H. Ceric, R.L. de Orio, J. Cervenka, S. Selberherr:
  "Analysis of Microstructure Impact on Electromigration";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 241 - 244.
  
  
• G.-S. Choe, D.-W. Kim, J.-H. Cheon, S.-M. Seo, Y.-J. Park:
  "Simulation of Self Gating Effect of a Liquid Gate Carbon Nanotube Field Effect Transistor";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 161 - 164.
  
  
• R.L. de Orio, H. Ceric, S. Carniello, S. Selberherr:
  "Analysis of Electromigration in Redundant Vias";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 237 - 240.
  
  
• P. Dollfus, D. Querlioz, J. Saint-Martin, V.-N. Do, A. Bournel:
  "Wigner Monte Carlo Approach to Quantum Transport in Nanodevices";
  Talk: Conference, Hakone, Japan (invited); 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 277 - 280.
  
  
• S.T. Dunham, H.-W. Guo, J. Song, C. Ahn:
  "Atomistic Modeling of Dopant Diffusion and Segregation in Strained SiGeC";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 333 - 336.
  
  
• O. Ertl, S. Selberherr:
  "Three-Dimensional Topography Simulation Using Advanced Level Set and Ray Tracing Methods";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 325 - 328.
  
  
• M. Fujinaga, T. Yamauchi, S. Kamohara, A. Nishida:
  "3D Stress Simulation Using Simple Quasi-Models of Gate Oxidation and Silicidation";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 245 - 248.
  
  
• W. Gös, M. Karner, S. Tyaginov, P. Hehenberger, T. Grasser:
  "Level Shifts and Gate Interfaces as Vital Ingredients in Modeling of Charge Trapping";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 69 - 72.
  
  
• S.M. Goodnick, D. Vasileska, K. Raleva:
  "Is Dual Gate Device Structure better from Thermal Perspective?";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 125 - 128.
  
  
• T. Grasser, W. Gös, B. Kaczer:
  "Modeling Bias Temperature Instability during Stress and Recovery";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 65 - 68.
  
  
• M. Hane, H. Nakamura, K. Tanaka, K. Watanabe, Y. Tosaka, K. Ishikawa, S. Kumashiro:
  "Synthetic Soft Error Rate Simulation Considering Neutron Induced Single Event Transient from Transistor to LSI-Chip Level";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 365 - 368.
  
  
• A. Hassibi, Y. Liu, R.W. Dutton:
  "Progress in Biosensor and Bioelectronics Simulations: New Applications for TCAD";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 1 - 4.
  
  
• T. Hattori, S. Uno, N. Mori, K. Nakazato:
  "A Theoretical Study of Electron Mobility Reduction due to Acoustic Phonon Modulation in a Free-Standing Semiconductor Nanowire";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 289 - 292.
  
  
• Y. He, C. Fan, Y.N. Zhao, G. Du, X.-Y. Liu, R. Han:
  "Impact of Inhomogeneous Strain on the Valence Band Structures of Ge-Si Core-Shell Nanowires";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 121 - 124.
  
  
• A. Heigl, G. Wachutka:
  "Study on the Optimized Design of Nanowire Tunneling Transistors Including Quantum Effects";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 225 - 228.
  
  
• G. Hellings, G. Eneman, M. Meuris, K. De Meyer:
  "Analytical Model and Monte Carlo Simulations for Phosphorus Implantation in Germanium Including Ion Channeling";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 253 - 256.
  
  
• S.-M. Hong, C. Jungemann, M. Bollhöfer:
  "A Deterministic Boltzmann Equation Solver for Two-Dimensional Semiconductor Devices";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 293 - 296.
  
  
• C. Kampen, A. Martinez-Limia, P. Pichler, A. Burenkov, J. Lorenz, H. Ryssel:
  "Advanced Annealing Strategies for the 32 nm Node";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 317 - 320.
  
  
• D. Kim, T. Krishnamohan, K.C. Saraswat:
  "Performance Evaluation of Uniaxial and Biaxial Strained In_(x)Ga_(1-x)As NMOS DGFETs";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 101 - 104.
  
  
• Y.T. Kim, Y.G. Kim, G.Y. Yang, K.H. Lee, H. Horii, H.G. An, J.H. Kong, K.J. Lee, M.H. Park, Y.K. Park, M.H. Yoo:
  "Operational PRAM Analysis with PVT Variations Using Process-Aware Compact Model";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 269 - 272.
  
  
• T. Krishnamohan:
  "Band-Engineering of Novel Channel Materials for High Performance Nanoscale MOSFETs";
  Talk: Conference, Hakone, Japan (invited); 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 97 - 100.
  
  
• U.-H. Kwon, M. Nakamura, Y. Ohkura, H. Ishikawa, Y. Ohji:
  "Full 3D String-Level Simulation of NAND Flash Device";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 37 - 40.
  
  
• Y. Li, C.-H. Hwang, T.-C. Yeh, H.-M. Huang, T.-Y. Li, H.-W. Cheng:
  "Reduction of Discrete Dopant Induced High-Frequency Characteristic Fluctuations in Nanoscale CMOS Circuit";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 209 - 212.
  
  
• Y. Li, Y.-T. Kuo, H.-W. Cheng, T.-C. Yeh, H.-Y. Lo, M.-T. Chiang, C.-N. Mo:
  "Emission Efficiency Dependence on the Tilted Angle of Nanogaps in Surface Conduction Electron Emitter";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 205 - 208.
  
  
• F. Liu, J. He, L. Zhang, J. Zhang, J. Hu, X. Zhang, M. Chan:
  "A Complete Charge-Based Compact Model for Silicon Nanowire FETs Including Doping and Advanced Physical Effects";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 157 - 160.
  
  
• J. Liu, G. Du, J. Cao, Y. Wang, J. Kang, R. Han, X. Liu:
  "Self-Consistent Simulation of Schottky Barrier SpinFET";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 85 - 88.
  
  
• J. Lu, M. Gao, J. Zhang, Y. Wang, Z. Yu:
  "First-Principles Calculations for Effects of Fluorine Impurity in GaN";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 233 - 236.
  
  
• M. Luisier, G. Klimeck:
  "Full-Band and Atomistic Simulation of n- and p-Doped Double-Gate MOSFETs for the 22nm Technology Node";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 17 - 20.
  
  
• M. Lundstrom:
  "Computational Electronics in the 21^st Century: Challenges, Opportunities, Issues";
  Talk: Conference, Hakone, Japan (invited); 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 13 - 14.
  
  
• A. Martinez, J.R. Barker, A. R. Brown, A. Asenov, N. Seoane:
  "Simulation of Impurities with an Attractive Potential in Fully 3D Real-Space Non-Equilibrium Green´s Function Quantum Transport Simulations";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 341 - 344.
  
  
• S. Martinie, D. Munteanu, G. Le Carval, J.-L. Autran:
  "A New Unified Compact Model for Quasi-Ballistic Transport: Application to the Analysis of Circuit Performances of a Double-Gate Architecture";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 377 - 380.
  
  
• A. Mauri, L. Laurin, F. Montalenti, A. Benvenuti:
  "Atomistic Approach for Boron Transient Enhanced Diffusion and Clustering";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 329 - 332.
  
  
• G. Mil´nikov, N. Mori, T. Ezaki:
  "Effect of Random Impurities on Transport Characteristics of Nanoscale MOSFET";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 213 - 216.
  
  
• H. Minari, N. Mori:
  "Strain Effects on Ballistic Current in Ultrathin DG SOI MOSFETs";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 149 - 152.
  
  
• M. Miyake, D. Hori, N. Sadachika, U. Feldmann, M. Miura-Mattausch, H.J. Mattausch, T. Iizuka, K. Matsuzawa, Y. Sahara, T. Hoshida, T. Tsukada:
  "Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 381 - 384.
  
  
• S. Miyano, Y. Shimizu, T. Murakami, M. Miura-Mattausch:
  "A Surface Potential Based Poly-Si TFT Model for Circuit Simulation";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 373 - 376.
  
  
• M. Mochizuki, H. Hayashi, T. Chiba, K. Fukuda:
  "Analysis of Temperature and Process Variation Effects on Photo Sensor Circuits Using Device/Circuit Mixed-Mode Simulations";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 369 - 372.
  
  
• N. Mori, H. Minari:
  "Effects of Wavefunction Modulation on Electron Transport in Ultrathin Body DG MOSFETs";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 217 - 220.
  
  
• S. Muraoka, S. Souma, M. Ogawa:
  "Analysis of Direct Tunneling Current from Quasi-Bound States in n-MOSFET Based on Non-Equilibrium Green´s Function";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 221 - 224.
  
  
• Y. Ohkura, C. Suzuki, N. Mise, T. Matsuki, T. Eimori, M. Nakamura:
  "Monte Carlo Investigation of Potential Fluctuation in 3D Device Structure";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 33 - 36.
  
  
• H.-H. Park, S.-Y. Park, H.-S. Min, S. Jin:
  "Investigation of Noise in Silicon Nanowire Transistors through Quantum Simulations";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 73 - 76.
  
  
• J. Park, C. Hu:
  "Air Spacer Self-Aligned Contact MOSFET for Future Dense Memories";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 313 - 316.
  
  
• E. Piccinini, T. Tsafack, F. Buscemi, R. Brunnetti, M. Rudan, C. Jacoboni:
  "Band Calculation for the Hexagonal and FCC Chalcogenide Ge₂Sb₂Te₅";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 229 - 232.
  
  
• S. Potbhare, A. Akturk, N. Goldsman, A. Lelis:
  "Effects of Quantum Confinement on Interface Trap Occupation in 4H-SiC MOSFETs";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 181 - 184.
  
  
• M. Pourfath, H. Kosina:
  "Numerical Study of Carbon Nanotube Infra-Red Photo-Detectors";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 81 - 84.
  
  
• A.T. Putra, T. Tsunomura, A. Nishida, S. Kamohara, K. Takeuchi, T. Hiramoto:
  "Impact of Fixed Charge at MOSFETs´ SiO₂/Si Interface on V_TH Variation";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 25 - 28.
  
  
• D. Reid, C. Millar, G. Roy, S. Roy, R. Sinnott, G. Stewart, A. Asenov:
  "Prediction of Random Dopant Induced Threshold Voltage Fluctuations in NanoCMOS Transistors";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 21 - 24.
  
  
• C. Riddet, A. Asenov:
  "Convergence Properties of Density Gradient Quantum Corrections in 3D Ensemble Monte Carlo Simulations";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 261 - 264.
  
  
• D. Rideau, M. Feraille, M. Michaillat, C. Tavernier, H. Jaouen:
  "Transport Masses in Strained Silicon MOSFETs with Different Channel Orientations";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 105 - 108.
  
  
• F. Sacconi, G. Romano, G. Penazzi, M. Povolotskyi, M. Auf der Maur, A. Pecchia, A. Di Carlo:
  "Electronic and Transport Properties of GaN/AlGaN Quantum Dot-Based pin-Diodes";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 177 - 180.
  
  
• H. Sakamoto, K. Watanabe, H. Arimoto, M. Tanizawa, S. Kumashiro:
  "A Surface Potential Model for Bulk MOSFET which Accurately Reflects Channel Doping Profile Expelling Fitting Parameters";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 273 - 276.
  
  
• E. Sarrazin, S. Barraud, F. Triozon, A. Bournel:
  "A Self-Consistent Calculation of Band Structure in Silicon Nanowires Using a Tight-Binding Model";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 349 - 352.
  
  
• A. Satou, V. Ryzhii, N. Vagidov, V. Mitin, T. Otsuji:
  "Effect of Contacts on Terahertz Plasma Resonances in Two-Dimensional Electron Systems";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 197 - 200.
  
  
• A. Schenk, M. Luisier:
  "2D Simulation of Gate Currents in MOSFETs: Comparison between S-Device and the Quantum Mechanical Simulator GreenSolver";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 301 - 304.
  
  
• B. Schmithusen, P. Tikhomirov, E. Lyumkis:
  "Phase-Change Memory Simulations Using an Analytical Phase Space Model";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 57 - 60.
  
  
• Y.C. Song, X.-Y. Liu, Z.Y. Wang, K. Zhao, G. Du, Z.L. Xia, D. Kim, K.-H. Lee:
  "Evaluating the Effects of Physical Mechanisms on the Program, Erase and Retention in the Charge Trapping Memory";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 41 - 44.
  
  
• F. Stimpfl, R. Heinzl, P. Schwaha, S. Selberherr:
  "A Robust Parallel Delaunay Mesh Generation Approach Suitable for Three-Dimensional TCAD";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 265 - 268.
  
  
• K. Suzuki, T. Inoue, H. Miura:
  "Effect of Interface Characteristics of W/HfO_2±x on Electronic Reliability: Quantum Chemical Molecular Dynamics Study";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 357 - 360.
  
  
• V. Sverdlov, T. Windbacher, S. Selberherr:
  "Mobility Enhancement in Thin Silicon Films: Strain and Thickness Dependences of the Effective Masses and Non-Parabolicity Parameter";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 145 - 148.
  
  
• S. Takagi:
  "Understanding and Engineering of Carrier Transport in Advanced MOS Channels";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 9 - 12.
  
  
• H. Takeda, T. Ikezawa, M. Kawada, M. Hane:
  "Source/Drain Engineering for High-Performance Deep Sub-100nm Ge-pMOSFETs Using Full-Band Monte Carlo Simulation";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 113 - 116.
  
  
• T. Terunuma, T. Watanabe, T. Shinada, I. Ohdomari, Y. Kamakura, K. Taniguchi:
  "Ensemble Monte Carlo/Molecular Dynamics Simulation of Electron Mobility in Silicon with Ordered Dopant Arrays";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 29 - 32.
  
  
• B. Thouy, J.P. Mazellier, J.C. Barbe, G. Le Carval:
  "Phonon Transport in Electronic Devices: From Diffusive to Ballistic Regime";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 285 - 288.
  
  
• H. Tsuji, T. Kuzuoka, Y. Kamakura, K. Taniguchi:
  "Analysis and Modeling of Capacitance-Voltage Characteristics of Poly-Si TFTs Using Device Simulation";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 185 - 188.
  
  
• W.G. Vandenberghe, A.S. Verhulst, G. Groeseneken, B. Soree, W. Magnus:
  "Analytical Model for Point and Line Tunneling in a Tunnel Field Effect Transistor";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 137 - 140.
  
  
• M. Vasicek, J. Cervenka, M. Karner, T. Grasser:
  "Consistent Higher-Order Transport Models for SOI MOSFETs";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 129 - 132.
  
  
• S. Wakahara:
  "Modulated Exchange and Gate Oxide Thickness Effects on Surface Roughness Limited Mobility";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 305 - 308.
  
  
• X. Wang, G. Shahidi, P. Oldiges, M. Khare:
  "Device Scaling of High Performance MOSFET with Metal Gate High-K at 32nm Technology Node and Beyond";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 309 - 312.
  
  
• X. Wang, J. Wu:
  "Progress in Modeling of SMT "Stress Memorization Technique" and Prediction of Stress Enhancement by a Novel PMOS SMT Process";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 117 - 120.
  
  
• H. Watanabe:
  "Transient Device Simulation of Trap-Assisted Leakage in Non-Volatile Memory Cell";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 45 - 48.
  
  
• D. Werber, G. Wachutka:
  "Interpretation of Laser Absorption Measurements on 4H-SiC Bipolar Diodes by Numerical Simulation";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 89 - 92.
  
  
• T. Windbacher, V. Sverdlov, S. Selberherr, C. Heitzinger, N. Mauser, C. Ringhofer:
  "Simulation of Field-Effect Biosensors (BioFETs)";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 193 - 196.
  
  
• J.-M. Woo, H.-H. Park, H.-S. Min, Y.-J. Park, S.-M. Hong, C.H. Park:
  "Statistical Analysis of Random Telegraph Noise in CMOS Image Sensors";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 77 - 80.
  
  
• O. Yahmazadeh, Y. Bonnassieux, A. Saboundji, G. Horowitz, B. Geffroy, D. Tondelier:
  "Organic Thin Film Transistors Modeling: Simulation and Design of a Fully Organic AMOLED Pixel Circuit";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 189 - 192.
  
  
• Y. Yamada, H. Tsuchiya:
  "Three-Dimensional Quantum Transport Simulation of Si-Nanowire Transistors Based on Wigner Function Model";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 281 - 284.
  
  
• S. Yamakawa, S. Mayuzumi, J. Wang, Y. Tateshita, D. Kosemura, M. Takei, A. Ogura:
  "Study of Stress Effect on Replacement Gate Technology with Compressive Stress Liner and eSiGe for pFETs";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 109 - 112.
  
  
• T. Yamanaka, K. Nishi, H.D. Nguyen, M. Mochizuki, H. Hayashi, K. Fukuda, K. Sasaki, Y. Doi:
  "Ion Implantation Model for Channeling through Multilayers";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 249 - 252.
  
  
• W.-Z. Yan, D. Gang, K.-J. Feng, L.-X. Yan, H. Ruqi:
  "Monte Carlo Simulation of Cu-Resistivity";
  Talk: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 321 - 324.
  
  
• D. Zhang, M. Ferrier, P. Griffin, Y. Nishi, T. Skotnicki:
  "Ultra High Performance Insulator Channel Transistor";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 141 - 143.
  
  
• J. Zhang, W. Xiong, Y. Wang, Z. Yu, M.-C. Tsai:
  "A Highly Effective and Efficient Cost Function Reduction Method for Inverse Lithography Technique";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 257 - 260.
  
  
• M. Zhang, Q. Ran, X. Guan, J. Zhang, Y. Wang, Z. Yu:
  "Comparative Simulation Study of GNR-FETs Using EHT- and TB-Based NEGF";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 165 - 168.
  
  
• Y.N. Zhao, G. Du, J.F. Kang, X.-Y. Liu, R. Han:
  "An Analytical 2D Current Model of Double-Gate Schottky-Barrier MOSFETs";
  Poster: Conference, Hakone, Japan; 2008-09-09 - 2008-09-11; in: "Proc. of SISPAD", (2008), 978-1-4244-1753-7; 133 - 136.