SISPAD 2006 Proceedings

• N. Agrawal, J. Chen, Z. Hui, Y.-C. Yeo, S. Lee, D.S. Chan, M.-F. Li, G.S. Samudra:
  "Interface Barrier Abruptness and Work Function Requirements for Scaling Schottky Source-Drain MOS Transistors";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 139 - 142.
  
  
• C. Ahn, S.T. Dunham:
  "Predictive Models for Co-Doping Effects between Combinations of Donors (P/As/Sb) and Acceptors (B/In/Ga)";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 83 - 86.
  
  
• A. Akturk, N. Goldsman, Z. Dilli, M. Peckerar:
  "Device Performance and Package Induced Self-Heating Effects at Cryogenic Temperatures";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 240 - 243.
  
  
• A. Akturk, G.W. Pennington, N. Goldsman, A.E. Wickenden:
  "Quantum Electron Transport in Carbon Nanotubes: Velocity Oscillations and Length Dependence";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 31 - 34.
  
  
• P. Andrei:
  "On the Analysis of Random Doping Induced Fluctuations in Ultra-Small Semiconductor Devices by Linearization";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 256 - 259.
  
  
• Y. Ashizawa, R. Tanabe, H. Oka:
  "Device Characteristics with Potential Fluctuation Induced by Non-Uniformity at Gate Oxide Interface with Multifractal Analysis";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 107 - 110.
  
  
• D.N. Bentz, M.O. Bloomfield, H. Huang, R.J. Gutmann, T.S. Cale:
  "Grain-Based Modeling of Stress Induced Copper Migration for 3D IC Interwafer Vias";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 345 - 348.
  
  
• K. Bera, J. Carducci, D. Hoffman, S. Ma:
  "Flow Simulation: Advanced Dielectric Etch Equipment Design and Process Development";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 244 - 247.
  
  
• C. Busseret, N. Baboux, C. Plossu, A. Poncet:
  "Ultra-Fast Full Quantum Capacitance and Current-Voltage Calculations of MOS Capacitors";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-421-4244-0404-5; 188 - 191.
  
  
• N. Butt, M.A. Alam:
  "Scaling Limits of Capacitorless Double-Gate DRAM Cell";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 302 - 305.
  
  
• H.-S. Byun, W.-S. Lee, J.-W. Lee, K.-H. Lee, Y.-K. Park, J.-T. Kong:
  "Three-Dimensional Analysis on the GIDL Current of Body-Tied Triple Gate FinFET";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 267 - 270.
  
  
• H. Ceric, C. Hollauer, S. Selberherr:
  "Three-Dimensional Simulation of Intrinsic Stress Build-Up in Thin Films";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 192 - 195.
  
  
• L. De Marchi, E. Baravelli, F. Franze, N. Speciale:
  "3D Mesh Generation with Wavelet-Driven Adaptivity";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 212 - 215.
  
  
• J. Deng, H.-S. Wong:
  "A Circuit-Compatible SPICE Model for Enhancement Mode Carbon Nanotube Field Effect Transistors";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 166 - 169.
  
  
• S. Dhar, E. Ungersboeck, H. Kosina, T. Grasser, S. Selberherr:
  "Analytical Modeling of Electron Mobility in Strained Germanium";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 39 - 42.
  
  
• M. Diebel, H.W. Kennel, M.D. Giles:
  "Ab-Initio Calculations of Shear Stress Effects on Defects and Diffusion in Silicon";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 75 - 78.
  
  
• Z. Dilli, N. Goldsman, A. Akturk, G. Metze:
  "A 3D Time-Dependent Green's Function Approach to Modeling Electromagnetic Noise in On-Chip Interconnect Networks";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 337 - 340.
  
  
• K. Eikyu, T. Okagaki, M. Tanizawa, K. Ishikawa, T. Eimori, O. Tsuchiya:
  "Global Identification of Variability Factors and its Application to the Statistical Worst-Case Model Generation";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 154 - 157.
  
  
• X. Fan, L.F. Register, B. Ghosh, S.K. Banerjee, B. Winstead, U. Ravaioli:
  "Scalability of Biaxially Strained Si NMOS on Technology Roadmap";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 232 - 235.
  
  
• P. Fantini, A. Benvenuti, A. Pirovano, F. Pellizzer, D. Ventrice, G. Ferrari:
  "A Compact Model for Phase Change Memories";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 162 - 165.
  
  
• M. Feraille, D. Rideau, A. Ghetti, A. Poncet, C. Tavernier, H. Jaouen:
  "Low-Field Mobility in Strained Silicon with Full-Band Monte Carlo Simulation Using k·p and EPM Bandstructure";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 264 - 266.
  
  
• M. Fujinaga, S. Itoh, M. Mochiduki, T. Uchida, H. Ishikawa, M. Takenaka, C.J. Park, S. Asada, T. Shinzawa, J. Namekata, S. Wakahara, T. Wada:
  "3D Process Simulation of CMOS Inverter Based on Selete 65nm Full Process";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 373 - 376.
  
  
• A. Ghetti, D. Rideau:
  "3D Monte Carlo Device Simulation of Nanowire MOSFETs Including Quantum Mechanical and Strain Effects";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 67 - 70.
  
  
• B. Ghosh, X.-F. Fan, L.F. Register, S.K. Banerjee:
  "Monte Carlo Study of Remote Coulomb and Remote Surface Roughness Scattering in Nanoscale Ge p-MOSFETs with Ultrathin High-Κ Dielectrics";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 170 - 172.
  
  
• E. Gnani, A. Marchi, S. Reggiani, M. Rudan, G. Baccarani:
  "Comparison of Device Performance and Scaling Properties of Cylindrical-Nanowire (CNW) and Carbon-Nanotube (CNT) Transistors";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 23 - 26.
  
  
• T. Grasser, R. Entner, O. Triebl, R. Minixhofer:
  "TCAD Modeling of Negative Bias Temperature Instability";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 330 - 333.
  
  
• X. Guan, J. Lu, Y. Wang, Z. Yu:
  "Atomistic-Level Modeling for Thickness Dependence of Electron Mobility in InSb QW-FETs";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 248 - 251.
  
  
• H.-W. Guo, S.T. Dunham, C.-L. Shih, C. Ahn:
  "Modeling of Defect Evolution and TED under Stress Based on DFT Calculations";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 71 - 74.
  
  
• R. Hagenbeck, S. Decker, P. Haibach, C. Jungemann, T. Mikolajick, G. Tempel, M. Isler, B. Meinerzhagen:
  "Monte Carlo Simulation of Charge Carrier Injection in Twin Flash Memory Devices during Program and Erase";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 322 - 325.
  
  
• M. Hane, T. Ikezawa, M. Kawada, T. Ezaki, T. Yamamoto:
  "Self-Consistent Full-Band Monte Carlo Device Simulation for Strained n-MOSFETs Incorporating Vertical Quantization, Multi-Subband, and Different Channel Orientation Effects";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 55 - 58.
  
  
• Y. He, D. Hou, X. Liu, C. Fan, R. Han:
  "AC Conductance of Finite Length Carbon Nanotubes";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 180 - 183.
  
  
• S.-M. Hong, C.H. Park, M.J. Lee, H.S. Min, Y.-J. Park:
  "Physics-Based Phase Noise Analysis of CMOS RF Oscillators";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 95 - 98.
  
  
• B. Hwang, B.S. Shim, S. Jin, I.-Y. Chung, S.-M. Jung, K. Kim, Y.-J. Park, H.S. Min:
  "Modeling of the Leakage Current Distribution of 16M Stacked Single Crystal (SC)-like SOI PMOS Transistors Using the Green's Function Method";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 334 - 336.
  
  
• T. Imoto, Y. Tateshita, T. Kobayashi:
  "Novel Asymmetric Raised Source/Drain Extension MOSFET";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 385 - 388.
  
  
• Y. Ito, K. Suzuki, H. Miura:
  "Quantum Chemical Molecular Dynamics Analysis Dielectric Characteristic of HfO_2-x Films";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 150 - 153.
  
  
• M.-A. Jaud, S. Barraud, P. Dollfus, H. Jaouen, G. Le Carval:
  "Monte Carlo Simulation of Ultimate DGMOS Based on a Pearson Effective Potential Formalism";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 196 - 199.
  
  
• S. Jin, Y.-J. Park, S.H. Min:
  "Influence of Electron-Phonon Interactions on the Electronic Transport in Nanowire Transistors";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 35 - 38.
  
  
• S. Johnson, Y. Avniel, J. White, S. Boyd:
  "Design Tools for Emerging Technologies";
  Talk: Conference, Monterey, USA (invited); 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 1 - 4.
  
  
• C. Jungemann, B. Meinerzhagen:
  "Numerical Simulation of RF Noise in Si Devices";
  Talk: Conference, Monterey, USA (invited); 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 87 - 94.
  
  
• T. Kanemura, T. Izumida, N. Aoki, M. Kondo, S. Ito, T. Enda, K. Okano, H. Kawasaki, A. Yagishita, A. Kaneko, S. Inaba, M. Nakamura, K. Ishimaru, K. Suguro, K. Eguchi, H. Ishiuchi:
  "Improvement of Drive Current in Bulk FinFET Using Full 3D Process/Device Simulations";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 131 - 134.
  
  
• P. Kapur, R.S. Shenoy, K.C. Saraswat:
  "Power/Performance-Based Scalability Comparisons between Conventional and Novel Transistors down to 32nm Technology Node";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 290 - 293.
  
  
• G. Karlowatz, E. Ungersboeck, W. Wessner, H. Kosina:
  "Full-Band Monte Carlo Analysis of Electron Transport in Arbitrarily Strained Silicon";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 63 - 66.
  
  
• M. Karner, E. Ungersboeck, A. Gehring, S. Holzer, H. Kosina, S. Selberherr:
  "Strain Effects on Quasi-Bound State Tunneling in Advanced SOI CMOS Technologies";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 314 - 317.
  
  
• D. Kim, T. Krishnamohan, Y. Nishi, K.C. Saraswat:
  "Band to Band Tunneling Limited Off-State Current in Ultrathin Body Double-Gate FETs with High Mobility Materials: III-V, Ge and Strained SiGe";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 389 - 392.
  
  
• Y. Kim, G.S. Hwang, S.K. Banerjee:
  "Ab-Initio Calculation of As-Vacancy Deactivation and Interstitial-Mediated As Diffusion in Strained Si";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 79 - 82.
  
  
• Y.-T. Kim, K.-H. Lee, Y.-K. Park, J.-T. Kong:
  "Analysis of Electronic Threshold of PRAM Cell Operation";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 393 - 396.
  
  
• Y.P. Kim, M. Ulrich, P. Vaidyanathan, V. Ananthan, C. Mouli, K. Parekh:
  "Small-Signal Analysis and Modeling of Asymmetric Source/Drain Parasitic Resistances for DRAM Access Transistors in Low Power Applications";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 135 - 138.
  
  
• D. Kimpton, M. Baida, V. Zhuk, M. Temkin, I. Chakarov:
  "Multiple Type Grid Approach for 3D Process Simulation";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 369 - 372.
  
  
• T.A. Kirichenko, D. Yu, G.S. Hwang, S.K. Banerjee:
  "Vacancy at Si-SiO2 Interface: Ab-Initio Study";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 147 - 149.
  
  
• U. Knipper, G. Wachutka, F. Pfirsch, T. Raker:
  "Numerical Analysis of Destruction Mechanisms of NPT- and FS-IGBTs in Forward Blocking Mode";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 275 - 278.
  
  
• M. Kondo, T. Nakauchi, S. Ito, N. Aoki, M. Nakamura, K. Naruke, H. Ishiuchi:
  "Simulation of NOR-Flash Memory Cells Focusing on Narrow Channel Effects on VTH Dispersion";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 127 - 130.
  
  
• H. Kosina, V. Sverdlov, T. Grasser:
  "Wigner Monte Carlo Simulation: Particle Annihilation and Device Applications";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 357 - 360.
  
  
• S. Krishnan, D. Vasileska:
  "First Self-Consistent Full-Band 2D Monte Carlo - 2D Poisson Device Solver for Modeling SiGe Heterojunction p-Channel Devices";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 365 - 368.
  
  
• A. Kumar, P.M. Solomon:
  "Simulation Study of a Metal/High-Κ Gate Stack for Low-Power Applications";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 298 - 301.
  
  
• L. Li, G. Meller, H. Kosina:
  "Doping-Dependent Conductivity in Organic Semiconductors";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 204 - 207.
  
  
• R. Liebmann, M. Nawaz, K.H. Bach:
  "Efficient 2D Approximation for Layout-Dependent Relaxation of Etch Stop Liner Stress due to Contact Holes";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 173 - 175.
  
  
• M. Liu, M. Cai, Y. Taur:
  "Scaling Limit of CMOS Supply Voltage from Noise Margin Considerations";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 287 - 289.
  
  
• Y. Liu, S. Cao, R.W. Dutton:
  "Numerical Investigation of Low Frequency Noise in MOSFETs with High-Κ Gate Stacks";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 99 - 102.
  
  
• K.V. Loiko, V. Adams, D. Tekleab, B. Winstead, X.-Z. Bo, P. Grudowski, S. Goktepeli, S. Filipiak, B. Goolsby, V. Kolagunta, M.C. Foisy:
  "Multilayer Model for Stressor Film Deposition";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 123 - 126.
  
  
• W.-Y. Lu, Y. Taur:
  "Effect of Body Doping on the Scaling of Ultrathin SOI MOSFETs";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 294 - 297.
  
  
• A. Martinez, J.R. Barker, A. Asenov, M. Bescond, A. Svizhenko, A. Anantram:
  "Development of a Full 3D NEGF Nano-CMOS Simulator";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 353 - 356.
  
  
• J.-G. Min, S.-H. Rha, T.-K. Kim, U.-H. Kwon, J.-S. Goo, Y.-K. Park, J.-T. Kong:
  "Modeling of Stress-Dependent Wet Etch Characteristic for P-SOG STI Process";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 260 - 263.
  
  
• R. Minixhofer:
  "TCAD as an Integral Part of the Semiconductor Manufacturing Environment";
  Talk: Conference, Monterey, USA (invited); 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 9 - 16.
  
  
• M. Mochizuki, K. Fukuda:
  "Impact of Wafer and Technology Selection on Liner Stress Mobility Enhancement";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 220 - 223.
  
  
• V. Narayanan, E.C. Kan:
  "A Madelung Fluid-Based Density Gradient Model for Large Barrier Tunneling Calculations";
  Talk: Conference, Monterey, USA1-4244-0404-5; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 318 - 321.
  
  
• S.R. Nassif:
  "Model to Hardware Matching for Nanometer Scale Technologies";
  Talk: Conference, Monterey, USA (invited); 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 5 - 8.
  
  
• M. Nawaz, P. Haibach, W. Molzer:
  "Optimization of Halo Implant Using 3D TCAD for Nanoscale MuGFETs";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 176 - 179.
  
  
• B. Obradovic, R. Kotlyar, F.O. Heinz, P. Matagne, T. Rakshit, D. Nikonov, M.A. Stettler:
  "Carbon Nanoribbons: An Alternative to Carbon Nanotubes";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 27 - 30.
  
  
• Y. Ohkura, C. Suzuki:
  "Monte Carlo Simulation of 3D Non-Volatile Memory";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 279 - 282.
  
  
• T. Okada:
  "A Tool Development of Rigorous Schrödinger/Luttinger-Based Monte Carlo Codes for Scaled MOS Studies in Terms of Crystal Orientation, Channel Direction, Mechanical Stress and Applied Voltage";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 59 - 62.
  
  
• G. Pennington, S. Potbhare, J.M. McGarrity, N. Goldsman, A. Lelis, C. Ashman:
  "Electron Transport at Technologically Significant Stepped 4H-SiC/SiO₂ Interfaces";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 236 - 239.
  
  
• L. Perniola, J. Razafindramora, P. Scheiblin, F. Dauge, C. Jahan, B. De Salvo, G. Reimbold, F. Boulanger, G. Ghibaudo:
  "A Semi-Analytical Model for the Subthreshold Behavior of SOI FinFLASH Structures";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 228 - 231.
  
  
• A.T. Pham, C. Jungemann, B. Meinerzhagen:
  "A Full-Band Spherical Harmonics Expansion of the Valence Bands up to High Energies";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 361 - 364.
  
  
• M. Pourfath, H. Kosina, B.H. Cheong, W.J. Park, S. Selberherr:
  "The Effect of Electron-Phonon Interaction on the Static and Dynamic Response of CNTFETs";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 208 - 211.
  
  
• K. Ravichandran, W. Luo, W. Windl, L.R. Fonseca:
  "Contact Structure Formation in Carbon Nanotube Electronic Devices and its Effect on Electron Transport";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 349 - 352.
  
  
• C. Riddet, A. R. Brown, C. Alexander, C. Millar, S. Roy, A. Asenov:
  "Efficient Density Gradient Quantum Corrections for 3D Monte Carlo Simulations";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 200 - 203.
  
  
• Y. Saad, M. Ciappa, P. Pfäffli, L. Bomholt, W. Fichtner:
  "Modeling of Cross-Talk Effects in Floating-Gate Devices Using TCAD Simulations";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 224 - 227.
  
  
• J. Saint-Martin, D. Querlioz, A. Bournel, P. Dollfus:
  "Efficient Multi Sub-Band Monte Carlo Simulation of Nanoscaled Double-Gate MOSFETs";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 216 - 219.
  
  
• P. Sakalas, A. Chakravorty, M. Schroter, M. Ramonas, J. Herricht, A. Shimukovitch, C. Jungemann:
  "Modeling of High Frequency Noise in SiGe HBTs";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 271 - 274.
  
  
• A. Schen, P.P. Altermatt, B. Schmithüsen:
  "Physical Model of Incomplete Ionization for Silicon Device Simulation";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 51 - 54.
  
  
• T. Schnattinger, E. Bär, A. Erdmann:
  "Mesoscopic Resist Processing Simulation in Optical Lithography";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 341 - 344.
  
  
• B.S. Shim, S. Jin, Y.-J. Park, H.S. Min:
  "A New Statistical Model for the SILC Distribution of Flash Memory and the Effect of Spatial Trap Distribution";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 326 - 329.
  
  
• H. Shin, I.M. Kang, J.W. Jeon, J. Gil:
  "Active and Passive RF Device Compact Modeling in CMOS Technologies";
  Talk: Conference, Monterey, USA (invited); 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 17 - 22.
  
  
• K. Shiraishi, H. Takeuchi, Y. Akasaka, H. Watanabe, N. Umezawa, T. Chikyow, Y. Nara, T-J.K. Liu, K. Yamada:
  "Theory of Fermi Level Pinning of High-Κ Dielectrics";
  Talk: Conference, Monterey, USA (invited); 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 306 - 313.
  
  
• K. Sonoda, K. Ishikawa, T. Eimori, O. Tsuchiya:
  "Modeling of Discrete Dopant Effects on Threshold Voltage Shift by Random Telegraph Signal";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 115 - 118.
  
  
• L. Sponton, L. Bomholt, D. Pramanik, W. Fichtner:
  "A Full 3D TCAD Simulation Study of Linewidth Roughness Effects in 65nm Technology";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 377 - 380.
  
  
• R. Tanabe, Y. Ashizawa, H. Oka:
  "Investigation of SNM with Random Dopant Fluctuations for FD SGSOI and FinFET 6T SOI SRAM Cell by Three-Dimensional Device Simulation";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 103 - 106.
  
  
• H. Tanimoto, M. Kondo, T. Enda, N. Aoki, R. Iijima, T. Watanabe, M. Takayanagi, H. Ishiuchi:
  "Modeling of Electron Mobility Degradation for HfSiON MISFETs";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 47 - 50.
  
  
• D. Tekleab, V. Adams, K. Loiko, B. Winstead, S. Parsons, P. Grudowski:
  "Stress Sensitivity of p-MOSFET under High Mechanical Stress";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 119 - 122.
  
  
• S. Toriyama, D. Hagishima, K. Matsuzawa, N. Sano:
  "Device Simulation of Random Dopant Effects in Ultra-Small MOSFETs Based on Advanced Physical Models";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 111 - 114.
  
  
• E. Ungersboeck, V. Sverdlov, H. Kosina, S. Selberherr:
  "Electron Inversion Layer Mobility Enhancement by Uniaxial Stress on (001) and (110) Oriented MOSFETs";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 43 - 46.
  
  
• M. Wagner, G. Span, S. Holzer, T. Grasser:
  "Design Optimization of Large Area Si/SiGe Thermoelectric Generators";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 397 - 400.
  
  
• X. Wang, A. Bryant, P. Oldiges, S. Narasimha, R. Dennard, W. Haensch:
  "Simulation Study on Channel Length Scaling of High Performance Partially Depleted Metal Gate and Poly Gate SOI MOSFETs";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 283 - 286.
  
  
• T. Warabino, M. Miyake, N. Sadachika, D. Navarro, Y. Takeda, G. Suzuki, T. Ezaki, M. Miura-Mattausch, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, S. Kumashiro, S. Miyamoto:
  "Analysis and Compact Modeling of MOSFET High-Frequency Noise";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 158 - 161.
  
  
• R. Wittmann, A. Hössinger, J. Cervenka, S. Uppal, S. Selberherr:
  "Monte Carlo Simulation of Boron Implantation into (100) Germanium";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 381 - 384.
  
  
• H. Yamaguchi, E. Ibe, Y. Yahagi, S. Yamamoto, T. Akioka, H. Kameyama:
  "Novel Mechanism of Neutron-Induced Multi-Cell Error in CMOS Devices Tracked Down from 3D Device Simulation";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 184 - 187.
  
  
• J. Zhang, Y. Ashizawa, H. Oka, C. Kaneta, T. Yamazaki:
  "Ab-Initio Study of Boron Pile-Up at the Si(001)/SiO2 Interface";
  Talk: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 143 - 146.
  
  
• H. Zhao, N. Agrawal, R. Javier, S.C. Rustagi, M. Jurczak, Y.-C. Yeo, G.-S. Samudra:
  "Simulation of Multiple Gate FinFET Device Gate Capacitance and Performance with Gate Length and Pitch Scaling";
  Poster: Conference, Monterey, USA; 2006-09-06 - 2006-09-08; in: "Proc. of SISPAD", (2006), 1-4244-0404-5; 252 - 255.