SISPAD 2005 Proceedings

• L.S. Adam, C. Chiu, M. Huang, X. Wang, Y. Wang, S. Singh, Y. Chen, H. Bu, J. Wu:
  "Phenomenological Model for Stress Memorization Effect from a Capped-Poly Process";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 139 - 142.
  
  
• S.S. Ahmed, C. Ringhofer, D. Vasileska:
  "Efficacy of the Thermalized Effective Potential Approach for Modeling Nanodevices";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 251 - 254.
  
  
• A. Akturk, N. Goldsman, G. Metze:
  "Coupled Simulation of Device Performance and Heating of Vertically Stacked Three-Dimensional Integrated Circuits";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 115 - 118.
  
  
• A. Akturk, G. Pennington, N. Goldsman:
  "Device Behavior Modeling for Carbon Nanotube Silicon-On-Insulator MOSFETs";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 51 - 54.
  
  
• A. Al-Ahmadi, S. Kaya:
  "A Novel Single-Gated Strained CMOS Architecture: COSMOS";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 263 - 266.
  
  
• J. Aoyama, T. Takani, T. Toyabe, L. Kalachev:
  "Threshold Voltage Model of Single Gate SOI MOSFETs Derived from Asymptotic Method";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 167 - 170.
  
  
• Y. Ashizawa, H. Oka:
  "Effect of Discrete Dopant Distribution on MOSFETs Scaling into the Future";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 31 - 34.
  
  
• V. Axelrad, A. Shibkov, H. Hayashi, K. Fukuda:
  "Implementation of ESD Protection in SOI Technology: A Simulation Study";
  Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 59 - 62.
  
  
• M.A. Belaid, K. Ketata, H. Maanane, M. Gares, K. Mourgues, J. Marcon:
  "Analysis and Simulation of Self-Heating Effects on RF LDMOS Devices";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 231 - 234.
  
  
• A. R. Brown, J.R. Watling, A. Asenov, G. Bersuker, P. Zeitzoff:
  "Intrinsic Parameter Fluctuations in MOSFETs due to Structural Non-Uniformity of High-Κ Gate Stack Materials";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 27 - 30.
  
  
• S. Brugger, A. Schenk:
  "First-Principle Computation of Relaxation Times in Semiconductors for Low and High Electric Fields";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 151 - 154.
  
  
• F.M. Bufler, A. Schenk:
  "On the Tunneling Energy within the Full-Band Structure Approach";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 155 - 158.
  
  
• J.-H. Chun, B. Kim, Y. Liu, O. Tornblad, R.W. Dutton:
  "Electrothermal Simulations of Nanoscale Transistors with Optical and Acoustic Phonon Heat Conduction";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 275 - 278.
  
  
• S. Dhar, G. Karlowatz, E. Ungersboeck, H. Kosina:
  "Numerical and Analytical Modeling of the High-Field Electron Mobility in Strained Silicon";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 223 - 226.
  
  
• J.-S. Doh, D.-W. Kim, S.-H. Lee, J.-B. Lee, J.-K. Park, M.-H. Yoo, J.-T. Kong:
  "A Unified Statistical Model for Inter-Die and Intra-Die Process Variation";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 131 - 134.
  
  
• B. Elattari, E. Driessens, T. Webers, G. Van den Bosch, P. Moens, G. Groeseneken:
  "Modeling of Energy Capability of Power Devices with Copper Layer Integration";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 207 - 210.
  
  
• R. Entner, T. Grasser, S. Selberherr, A. Gehring, H. Kosina:
  "Modeling of Tunneling Currents for Highly Degraded CMOS Devices";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 219 - 222.
  
  
• M.V. Fischetti, S.E. Laux, A. Kumar:
  "Simulation of Quantum Transport in Small Semiconductor Devices";
  Talk: Conference, Tokyo, Japan (invited); 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 19 - 22.
  
  
• E. Fuchs, S. Orain, C. Ortolland, P. Dollfus, G. Le Carval, D. Villanueva, A. Dray, H. Jaouen, T. Skotnicki:
  "A New Quasi Ballistic Model for Strained MOSFET";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 303 - 306.
  
  
• M.D. Giles:
  "TCAD Challenges in the Nanotechnology Era";
  Talk: Conference, Tokyo, Japan (invited); 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 7 - 12.
  
  
• E. Gnani, S. Reggiani, M. Rudan, G. Baccarani:
  "A Quantum-Mechanical Analysis of the Electrostatics in Multiple-Gate FETs";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 291 - 294.
  
  
• S. Hamaguchi, M. Yamashiro, H. Yamada:
  "Molecular Dynamics Simulation of Plasma-Surface Interactions during Dry Etching Processes";
  Talk: Conference, Tokyo, Japan (invited); 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 67 - 70.
  
  
• T. Hatakeyama, J. Nishio, C. Ota, T. Shinohe:
  "Physical Modeling and Scaling Properties of 4H-SiC Power Devices";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 171 - 174.
  
  
• H. Hayashi, T. Kuroda, K. Kato, K. Fukuda, S. Baba, Y. Fukuda:
  "ESD Protection Design Optimization Using a Mixed-Mode Simulation and its Impact on ESD Protection Design of Power Bus Line Resistance";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 99 - 102.
  
  
• R. Heinzl, T. Grasser:
  "Generalized Comprehensive Approach for Robust Three-Dimensional Mesh Generation for TCAD";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 211 - 214.
  
  
• M. Hogyoku:
  "One-Dimensional Corrected Drift-Diffusion Model: McKelvey's Method Extended with Accelerated Multi-Flux";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 163 - 166.
  
  
• C. Hollauer, H. Ceric, S. Selberherr:
  "Three-Dimensional Simulation of Stress-Dependent Thermal Oxidation";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 183 - 186.
  
  
• S.-H. Hong, R. Kim, H.S. Min, Y.-J. Park, C.H. Park:
  "A Physics-Based TCAD Framework for the Noise Analysis of RF CMOS Circuits under the Large-Signal Operation";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 119 - 122.
  
  
• S. Jin, Y.-J. Park, H.S. Min:
  "A Full Newton Scheme for the Coupled Schrödinger, Poisson, and Density-Gradient Equations";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 295 - 298.
  
  
• M. Karner, A. Gehring, H. Kosina, S. Selberherr:
  "Efficient Calculation of Quasi-Bound State Tunneling in CMOS Devices";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 35 - 38.
  
  
• K.R. Kim, R.W. Dutton:
  "Effects of Local Electric Field and Effective Tunnel Mass on the Simulation of Band-to-Band Tunnel Diode Model";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 159 - 162.
  
  
• G. Klimeck, M. Korkusinski, H. Xu, S. Lee, S. Goasguen, F. Saied:
  "Atomistic Simulations of Long-Range Strain and Spatial Asymmetry Effects in Multimillion-Atom Single and Double Quantum Dot Nanostructures";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 335 - 338.
  
  
• L. Kong, G. Du, Y. Wang, J. Kang, R. Han, X. Liu:
  "Simulation of Spin-Polarized Transport in GaAs/GaAIAs Quantum Well Considering Intersubband Scattering by the Monte Carlo Method";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 175 - 178.
  
  
• A. Kumar, M.V. Fischetti, S.E. Laux:
  "Monte-Carlo Simulations of Performance Scaling in Strained Si n-MOSFETs";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 299 - 302.
  
  
• A.L. Lacaita:
  "Physics and Performance of Phase Change Memories";
  Talk: Conference, Tokyo, Japan (invited); 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 267 - 270.
  
  
• Y. Li, H.-M. Chou, B.-S. Lee, C.-S. Lu, S.-M. Yu:
  "Computer Simulation of Germanium Nanowire Field Effect Transistors";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 227 - 230.
  
  
• X.-Y. Liu, J. Raynolds, C. Wells, J. Welch, T.S. Cale:
  "Atomistic Modeling of Electron Transport in Self-Assembled Arene-Based Molecular Wires";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 271 - 274.
  
  
• W. Ma, S. Kaya:
  "Study of RF Performance for Graded-Channel SOI MOSFETs";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 259 - 262.
  
  
• A. Marchi, S. Reggiani, M. Rudan:
  "A Schrödinger-Poisson Solution of CNT-FET Arrays";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 83 - 86.
  
  
• N. Miura, T. Chiba, S. Baba:
  "An Accurate Separation of Floating-Body and Self-Heating Effects for High-Frequency Characterization of SOI MOSFET's";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 63 - 66.
  
  
• M. Miura-Mattausch:
  "MOSFET Modeling beyond 100nm Technology: Challenges and Perspectives";
  Talk: Conference, Tokyo, Japan (invited); 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 1 - 6.
  
  
• H. Moriya, T. Iwasaki, H. Miura:
  "Strain-Induced Leakage Current in High-Κ Gate Oxides Simulated with First-Principles Calculation";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 331 - 334.
  
  
• V. Moroz, G. Eneman, P. Verheyen, F. Nouri, L. Washington, L. Smith, M. Jurczak, D. Pramanik, X. Xu:
  "The Impact of Layout on Stress-Enhanced Transistor Performance";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 143 - 146.
  
  
• K. Narasimhulu, V.R. Rao:
  "Forward Body-Biased Single Halo MOS Devices for Low Voltage Analog Circuits";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 255 - 258.
  
  
• Y. Ohkura, C. Suzuki, T. Enda, H. Takashino, H. Ishikawa, T. Kojima, T. Wada:
  "A Three-Dimensional Particle Device Simulator: HyDeLEOSMC and its Application to a FinFET";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 287 - 290.
  
  
• Q. Ouyang, K. Xiu:
  "Simulation Study of Reduced Self-Heating in Novel Thin SOI Vertical Bipolar Transistors";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 55 - 58.
  
  
• K.-H. Paik, S.-H. Lee, J.-H. Lyu, K.-H. Lee, Y.-K. Park, J.-T. Kong:
  "Three-Dimensional CMOS Image Sensor Cell Simulation and Optimization";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 103 - 106.
  
  
• G. Pennington, A. Akturk, N. Goldsman:
  "Low-Field Transport Model for Semiconducting Carbon Nanotubes";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 87 - 90.
  
  
• K. Permthammasin, G. Wachutka, M. Schmitt, H. Kapels:
  "Performance Analysis of Novel 600V Super-Junction Power LDMOS Transistors with Embedded p-Type Round Pillars";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 179 - 182.
  
  
• E. Pop, J.A. Rowlette, R.W. Dutton, K.E. Goodson:
  "Joule Heating under Quasi-Ballistic Transport Conditions in Bulk and Strained Silicon Devices";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 307 - 310.
  
  
• S. Potbhare, N. Goldsman, G. Pennington, J.M. McGarrity, A. Lelis:
  "Characterization of 4H-SiC MOSFET Interface Trap Charge Density Using a First Principles Coulomb Scattering Mobility Model and Device Simulation";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 95 - 98.
  
  
• M. Pourfath, H. Kosina, B.H. Cheong, W.J. Park:
  "Geometry-Dependence of the DC and AC Response of Ohmic Contact Carbon Nanotube Field Effect Transistors";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 91 - 94.
  
  
• X. Qi, A. Gyure, Y. Luo, S.C. Lo, M. Shahram, K. Singhal:
  "Measurement and Simulation of Interconnect Inductance in 90nm and Beyond";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 111 - 114.
  
  
• A. Redaelli, A.L. Lacaita, A. Benvenuti, A. Pirovano:
  "Comprehensive Numerical Model for Phase-Change Memory Simulations";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 279 - 282.
  
  
• M. Rudan:
  "The R-Σ Method for Nanoscale Device Analysis";
  Talk: Conference, Tokyo, Japan (invited); 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 13 - 18.
  
  
• A. Schenk, F.O. Heinz, B. Schmithusen:
  "DGSOI versus Bulk: A Quantum-Ballistic Study of 25nm n-MOSFETs";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 47 - 50.
  
  
• T. Schnattinger, E. Bär:
  "Comparison of Different Approaches for the Simulation of Topography Evolution during Lithography Development";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 215 - 218.
  
  
• P. Schwaha, R. Heinzl, T. Grasser, M. Spevak:
  "Coupling Three-Dimensional Mesh Adaptation with an A Posteriori Error Estimator";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 235 - 238.
  
  
• A. Sheikholeslami, F. Parhami, R. Heinzl, E. Al-Ani, C. Heitzinger, F. Badrieh, H. Puchner, T. Grasser, S. Selberherr:
  "Applications of Three-Dimensional Topography Simulation in the Design of Interconnect Lines";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 187 - 190.
  
  
• Y. Sheu, Y.-M. Huang, Y.-P. Hu, C.-C. Wang, S. Liu, R. Duffy, A. Heringa, F. Roozeboom, N.E. Cowern, P.B. Griffin:
  "Modeling Dopant Diffusion in Strained and Strain-Relaxed Epi-SiGe";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 75 - 78.
  
  
• A. Shibkov, V. Axelrad:
  "Integrated Simulation Flow for Self-Consistent Manufacturability and Circuit Performance Evaluation";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 127 - 130.
  
  
• K. Sonoda, S. Narumi, M. Tanizawa, K. Ishikawa, T. Eimori, Y. Ohji, H. Kurata:
  "Compact Modeling of Source-Side Injection Programming for 90nm Node AG-AND Flash Memory";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 123 - 126.
  
  
• G. Suzuki, K. Konno, D. Navarro, N. Sadachika, Y. Mizukane, O. Matsushima, M. Miura-Mattausch:
  "Time-Domain-Based Modeling of Carrier Transport in Lateral pin-Photodiode";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 107 - 110.
  
  
• K. Suzuki, Y. Ito, H. Miura:
  "Quantum Chemical Molecular Dynamics Analysis of the Effect of Intrinsic Defects and Strain on Dielectric Characteristic of Gate Oxide Films";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 327 - 330.
  
  
• H. Takeda, N. Mori:
  "Doping Profile Effects on Device Characteristics of Nanoscale MOSFETs";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 247 - 250.
  
  
• H. Takeuchi, M. Hane:
  "A Highly Efficient Statistical Compact Model Parameter Extraction Scheme";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 135 - 138.
  
  
• R. Tanabe, Y. Tosaka, Y. Ashizawa, H. Oka:
  "Investigation of 6T SOI SRAM Cell Stability Including Quantum and Gate Direct Tunneling Effects by Three-Dimensional Device Simulation";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 43 - 46.
  
  
• K. Tanaka, K. Takeuchi, M. Hane:
  "FinFET Source/Drain Profile Optimization Considering GIDL for Low Power Applications";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 283 - 286.
  
  
• S. Toriyama, K. Matsuzawa, N. Sano:
  "Gate Tunneling Current Fluctuations Associated with Random Dopant Effects";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 23 - 26.
  
  
• O. Tornblad, C. Ito, F. Rotella, G. Ma, R.W. Dutton:
  "Linearity Analysis of RF LDMOS Devices Utilizing Harmonic Balance Device Simulation";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 243 - 246.
  
  
• M. Uchida, Y. Kamakura, K. Taniguchi:
  "Performance Enhancement of p-MOSFETs Depending on Strain, Channel Direction, and Material";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 315 - 318.
  
  
• T. Uchida, H. Takashino, M. Tanizawa, T. Okagaki, K. Ishikawa, T. Eimori, Y. Ohji:
  "Simulation of Drain Current Reduction Caused by Process-Induced Stress";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 199 - 202.
  
  
• E. Ungersboeck, H. Kosina:
  "The Effect of Degeneracy on Electron Transport in Strained Silicon Inversion Layers";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 311 - 314.
  
  
• D. Villanueva, A. Dray, V. Orain, C. Fiori, E. Ortolland, E. Fuchs, F. Salvetti, A. Juge:
  "Calibrated Mobility Corrections for Drift Diffusion Simulation of Strained MOSFET Devices";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 319 - 322.
  
  
• X. Wang, M. Huang, C. Bowen, L.S. Adam, S. Singh, C. Chiu, J. Wu:
  "Exploring Transistor Width Effect on Stress-Induced Performance Improvement in p-MOSFET with SiGe Source/Drain";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 323 - 326.
  
  
• X. Wang, P. Oldiges, A. Bryant, J. Cai, Q. Ouyang, K. Rim:
  "Simulation Analysis of Series Resistance for SOI MOSFET in Nanometer Regime";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 239 - 242.
  
  
• H. Watanabe:
  "Statistics of Grain Boundaries in Gate Poly-Si";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 39 - 42.
  
  
• H. Wei, W. Yu, Z. Wang:
  "A Fast Algorithm for 3D Inductance Extraction Based on Investigation of Open-Circuit Current";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 203 - 206.
  
  
• W. Wessner, H. Ceric, J. Cervenka, S. Selberherr:
  "Dynamic Mesh Adaptation for Three-Dimensional Electromigration Simulation";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2009-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 147 - 150.
  
  
• R. Wittmann, A. Hössinger, S. Selberherr:
  "Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETs";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 191 - 194.
  
  
• J.-H. Yoo, T. Won, C.-O. Hwang, B.-J. Kim:
  "Atomistic Modeling for Retardation of Boron Diffusion and Dominant B_mI_n-Clusters in Pre-Doped Silicon";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 71 - 74.
  
  
• D. Zhang, X. Shao, Z. Yu, L. Tian:
  "A 3D Charge Model for FinFETs with Ballistic Transport";
  Poster: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 195 - 198.
  
  
• J. Zhang, Y. Ashizawa, H. Oka:
  "First-Principles Study of Interaction of As-Vacancy and Ring Mechanism of Diffusion under Presence of Ge in Si";
  Talk: Conference, Tokyo, Japan; 2005-09-01 - 2005-09-03; in: "Proc. of SISPAD", (2005), 4-9902-7621-3; 79 - 82.