SISPAD 2001 Proceedings

• A.C. Aarts, M.J. Swanenberg, W.J. Kloosterman:
  "Modeling of High-Voltage SOI-LDMOS Transistors Including Self-Heating";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 246 - 249.
  
  
• D.A. Antoniadis, V. Djomehri, A. Lochtefeld:
  "Electron Velocity in Sub-50nm Channel MOSFETs";
  Talk: Conference, Athens, Greece (invited); 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 156 - 161.
  
  
• B. Ardouin, T. Zimmer, H. Mnif, P. Fouillat:
  "Bipolar Transistor's Intrinsic and Extrinsic Capacitance Determination";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 304 - 307.
  
  
• A. Asenov:
  "3D Statistical Simulation of Intrinsic Fluctuations in Decanano MOSFETs Introduced by Discrete Dopants, Oxide Thickness Fluctuations and LER";
  Talk: Conference, Athens, Greece (invited); 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 162 - 169.
  
  
• V. Axelrad, Y. Huh, W.-H. Chen, P. Bendix:
  "Investigations of Salicided and Salicide-Blocked MOSFETs for ESD Including ESD Simulation";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 300 - 303.
  
  
• M. Bucher, J.-M. Sallese, C. Lallement:
  "Accounting for Quantum Effects and Polysilicon Depletion in an Analytical Design-Oriented MOSFET Model";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 296 - 299.
  
  
• F.M. Bufler, A. Schenk, W. Fichtner:
  "Simplified Inelastic Acoustic-Phonon Hole Scattering Model for Silicon";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 42 - 45.
  
  
• A. Burenkov, Y. Mu, H. Rysse:
  "On the Effect of Local Electronic Stopping on Ion Implantation Profiles in Non-Crystalline Targets";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 70 - 73.
  
  
• J. Cervenka, M. Knaipp, A. Hössinger, S. Selberherr:
  "Green's Function Approach for Three-Dimensional Diffusion Simulation of Industrial High-Voltage Applications";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 408 - 411.
  
  
• D. Connelly:
  "Decananometer FDSOI Device Optimization Including Random Variation";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 90 - 93.
  
  
• N.E. Cowern, F. Roozeboom, P. Van der Sluis:
  "Investigation of a Novel Rapid Thermal Processing Concept Using an Electro-Optically Controlled Radiation Cavity";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 344 - 347.
  
  
• F. Cristiano, B. Colombeau, C. Bonafos, J. Aussoleil, G. Assayag, A. Claverie:
  "Atomistic Simulations of Extrinsic Defects Evolution and Transient Enhanced Diffusion in Silicon";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 30 - 33.
  
  
• C. Dai, N. Hakim, S. Walstra, S. Hareland, J. Maiz, S. Yu, S.-W. Lee:
  "Neutron-SER Modeling and Simulation for 0.18μm CMOS Technology";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 278 - 283.
  
  
• M. Dauelsberg, M. Deufel, M. Reinhold, G. Strauch, T. Bergunde:
  "Equipment and Process Simulation of Compound Semiconductor MOCVD in the Production Scale Multiwafer Planetary Reactor";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 128 - 131.
  
  
• I. De, A. Shibkov, S. Saxena:
  "Robust Method for Fast and Accurate Simulation of Random Dopant Fluctuation Induced V_th-Variation in MOSFETs with Arbitrary Complex Doping Distribution";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 368 - 371.
  
  
• S. Decker, C. Jungemann, B. Neinhüs, B. Meinerzhagen:
  "2D Hierarchical Radio-Frequency Noise Modeling Based on a Langevin-Type Drift-Diffusion Model and Full-Band Monte Carlo Generated Local Noise Sources";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 136 - 139.
  
  
• K. Dragosits, Y. Ponomarev, C. Dachs, S. Selberherr:
  "Analysis of Ultra-Short MOSFETs with High-Κ Gate Dielectrics";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 412 - 415.
  
  
• S.T. Dunham, Z. Qin:
  "Acceleration of Lattice Monte Carlo Simulations and Application to Diffusion/Clustering of As at High Concentrations";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 116 - 119.
  
  
• J. Fu, S. Mijalkovic, W.J. Eysenga, H.W. Van Zeijl, W. Crans:
  "Varying Characteristics of Bipolar Transistors with Emitter Contact Window Width";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 308 - 311.
  
  
• Y. Fujii, R. Yoshimura, T. Matsuoka, K. Taniguchi:
  "Compact Device Model for Partially Depleted SOI MOSFETs";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 234 - 237.
  
  
• A. Gehring, C. Heitzinger, T. Grasser, S. Selberherr:
  "TCAD Analysis of Gain Cell Retention Time for SRAM Applications";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 416 - 419.
  
  
• E. Gnani, S. Reggiani, M. Rudan:
  "Density of States and Group Velocity Calculations for SiO₂";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 50 - 53.
  
  
• C. Gonzales Montes De Oca, S. Foley, A. Mathewson, J.F. Rohan:
  "Stress Modeling of Multi Level Interconnect Schemes for Future Deep Submicron Device Generations";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 364 - 367.
  
  
• J.-S. Goo, S. Donati, C.-H. Choi, Z. Yu, T.H. Lee, R.W. Dutton:
  "Impact of Substrate Resistance on Drain Current Noise in MOSFETs";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 182 - 185.
  
  
• B. Govoreanu, P. Blomme, M. Rosmeulen, J. Van Houdt, K. De Meyer:
  "A Figure of Merit for Flash Memory Multilayer Tunnel Dielectrics";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 270 - 273.
  
  
• T. Grasser, H. Kosina, S. Selberherr:
  "An Impact Ionization Model Including Non-Maxwellian and Non-Parabolicity Effects";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 46 - 49.
  
  
• T. Grasser, H. Kosina, S. Selberherr:
  "Investigation of Spurious Velocity Overshoot Using Monte Carlo Data";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 54 - 57.
  
  
• S. Hamaguchi, H. Ohta:
  "Modeling of Reactive Ion Etching for Si/SiO₂ Systems";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 170 - 173.
  
  
• M. Hane, T. Ikezawa, G.H. Gilmer:
  "Monte Carlo Impurity Diffusion Simulation Considering Charged Species";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 18 - 21.
  
  
• C. Harlander, R. Sabelka, S. Selberherr:
  "A Comparative Study of Two Numerical Techniques for Inductance Calculation in Interconnect Structures";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 254 - 257.
  
  
• C. Heitzinger, S. Selberherr:
  "Optimization for TCAD Purposes Using Bernstein Polynomials";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 420 - 423.
  
  
• S. Ho, Y. Dhkura, M. Ikegawa, N. Mise, J. Prasad, Y. Kawashima, S. Kubo:
  "An Agent-Based Common Software Platform Applied to Multiscale Device and Process Simulations";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 372 - 375.
  
  
• G. Hobler, V. Moroz:
  "Initial Conditions for Transient Enhanced Diffusion: Beyond the Plus-Factor Approach";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 34 - 37.
  
  
• J. Höntschel, R. Stenzel, W. Klix, F. Ertl, T. Asperger, R.A. Deutschmann, M. Bichler, G. Abstreiter:
  "Simulation of Vertical CEO-FETs by a Coupled Solution of the Schrödinger Equation with a Hydrodynamic Transport Model";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 222 - 225.
  
  
• A. Hössinger, T. Binder, W. Pyka, S. Selberherr:
  "Advanced Hybrid Cellular-Based Approach for Three-Dimensional Etching and Deposition Simulation";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 424 - 427.
  
  
• C.-K. Huang, N. Goldsman:
  "2D Self-Consistent Solution of Schrödinger Equation, Boltzmann Transport Equation, Poisson and Current-Continuity Equation for MOSFET";
  Talk: Conference, Athens, Greece; 2001-09-05 - 0000-00-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 148 - 151.
  
  
• K.-Y. Huang, Y. Li, C.P. Lee, S.M. Sze:
  "A Computational Efficient Method for HBT Intermodulation Distortions and Two-Tone Characteristics Simulation";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 226 - 229.
  
  
• A. Icaza Deckelmann, G. Wachutka, G. Groos, W. Kanert:
  "Electrothermal Device Simulation of an ESD Protection Structure Based on Bipolar DC Characteristcs";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 396 - 399.
  
  
• M.-K. Ieong, R. Young, H. Park, W. Rausch, I. Yang, S. Fung, F. Assaderaghi, H.-S. Wong:
  "Modeling the Impact of Body-to-Body Leakage in Partially Depleted SOI CMOS Technology";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 230 - 233.
  
  
• J.C. Jackson, B. Lane, A. Mathewson, A.P. Morrison:
  "Simulation of Dark Count in Geiger Mode Avalanche Photodiodes";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 376 - 379.
  
  
• J. Jakumeit, U. Ravaioli:
  "Local Iterative Monte Carlo Investigation of the Influence of Electron-Electron Scattering on Short Channel Si MOSFETs";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 38 - 41.
  
  
• M. Jaraiz, P. Castrillo, R. Pinacho, I. Martin-Bragado, J. Barbolla:
  "Atomistic Front-End Process Modeling: A Powerful Tool for Deep Submicron Device Fabrication";
  Talk: Conference, Athens, Greece (invited); 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 10 - 17.
  
  
• S.K. Jones, D.J. Bazley, E. Augendre, G. Badenes, A. Keersgieter, T. Skotnicki:
  "A Simulation Evaluation of 100nm CMOS Device Performance";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 288 - 291.
  
  
• R.V. Joshi, S.S. Kang, C.-T. Chuang:
  "3D Thermal Analysis for SOI and its Impact on Circuit Performance";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 242 - 245.
  
  
• W. Kaindl, G. Wachutka, G. Sölkner:
  "Modeling and Simulation of Charge Generation Events Caused by Ion Irradiation in High-Voltage Power Devices";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 436 - 439.
  
  
• Y. Kamakura, K. Deguchi, K. Taniguchi:
  "Analysis of Hot Carrier Induced Oxide Degradation in MOSFETs by Means of Full-Band Monte Carlo Simulation";
  Talk: Conference, Athens, Greece (invited); 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 108 - 115.
  
  
• S. Kaya, A. R. Brown, A. Asenov, D. Magot, T. Linton:
  "Analysis of Statistical Fluctuations due to Line Edge Roughness in Sub-0.1μm MOSFETs";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 78 - 81.
  
  
• M.G. Khazhinsky, A. Hoefler, M. Stockinger, D.J. Collins, I. Clejan, K. Wimmer, W. Taylor, M. Foisy, J.M. Higman, L. Bomholt, C. Chimencon, O. Zuyakova, W. Fichtner:
  "A Shared Architecture for a Dynamic Technology Simulation Repository";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 348 - 351.
  
  
• T-K. Kim, Y.P. Kim, W-Y. Chung, Y.-K. Park, L. Kong:
  "Comparison of Finite Element Stress Simulation with X-Ray Measurement for the Aluminum Conductors with Different Passivation Topography";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 258 - 261.
  
  
• Y. Kim, S. Yoon, I. Choi, S. Park, O. Kwon, T. Won:
  "A Full-Wave Analysis for Multilevel Interconnects Using FDTD-PML Method";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 336 - 339.
  
  
• D. Kitamaru, H. Veno, K. Morikawa, M. Tanaka, M. Miura-Mattausch, H.I. Mattausch, S. Kumashiro, T. Yamaguchi, K. Yamashita, N. Nakayama:
  "V_th-Model of Pocket-Implant MOSFETs for Circuit Simulation";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 392 - 395.
  
  
• G. Kokkoris, E. Gogolides, A.G. Boudouvis:
  "Simulation and Prediction of Aspect Ratio Dependent Phenomena during SiO₂ and Si Feature Etching in Fluorocarbon Plasmas";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 174 - 177.
  
  
• H. Kosina, M. Nedjalkov, S. Selberherr:
  "Variance and Covariance Estimation in Stationary Monte Carlo Device Simulation";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 140 - 143.
  
  
• O. Kwon, T. Won:
  "Level Set Modeling of Profile Evolution during Deposition Process";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 352 - 355.
  
  
• A. La Magna, S. Coffa, S. Libertino, M. Strobe, L. Colombo:
  "Interstitial Cluster Evolution and Transient Phenomena in Si Crystal";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 120 - 123.
  
  
• L. Larcher, P. Pavan, M. Cuozzo, A. Marmiroli:
  "A New Compact Spice-Like Model of E²PROM Memory Cells Suitable for DC and Transient Simulations";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 262 - 265.
  
  
• F.G. Lau, W. Molzer:
  "Dynamics of p⁺-Polysilicon Gate Depletion due to the Formation of Boron Compounds in TiSi₂";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 74 - 77.
  
  
• J. Lee, W-S. Cheong, J.-H. Choi, J.-C. Om:
  "Enhanced Diffusion of Phosphorus due to BPSG Layer in SEG-MOSFETs";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 274 - 277.
  
  
• K.-I. Lee, J. Kim, H. Shin, C. Lee, Y.-J. Park, H.S. Min:
  "An Efficient Frequency-Domain Analysis Technique of MOSFET Operation";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 186 - 189.
  
  
• D. Li, G. Wang, Y. Chen, G. Shrivastav, S. Oak, A. Tasch, S. Banerjee:
  "A Computationally Efficient Model for Three-Dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 332 - 335.
  
  
• Y. Li, O. Voskoboynikov, C.P. Lee, S.M. Sze:
  "A Nonlinear Iterative Method for InAs/GaAs Semiconductor Quantum Dots Simulation";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 324 - 327.
  
  
• Y. Ma, L. Chen, B. Jiang, M. Zhang, L. Tian, Z. Yu, L. Liu, Z. Li:
  "Simulation of Advanced n-MOSFET Emphasizing Quantum Mechanical Effects on 2D Characteristics";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 388 - 391.
  
  
• P. Maffezzoni, A. Brambilla, A.L. Lacaita:
  "An Efficient Tool for Extraction of Interconnect Models in Submicron Layouts";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 250 - 253.
  
  
• L.A. Marques, L. Pelaz, J. Hernendez, J. Barbolla:
  "The Role of Incomplete Interstitial-Vacancy Recombination on Silicon Amorphization";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 26 - 29.
  
  
• K. Matsuzawa, T. Ishihara:
  "Simulation of Flash Memory Programming Characteristics";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 266 - 269.
  
  
• K. Matsuzawa, K. Uchida, A. Nishiyama, T. Numata, M. Noguchi:
  "Device Simulation and Measurement of Hybrid SBTT";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 380 - 383.
  
  
• N. Miura, H. Hayashi, H. Komatsubara, M. Mochizuki, H. Matsuhashi, Y. Kajita:
  "TCAD Driven Process Design of 0.15μm Fully Depleted SOI Transistor for Low Power Applications";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 284 - 287.
  
  
• H. Nah, Y.I. Park, H.S. Min, C. Lee, H. Shin:
  "Characterization of Low-Frequency Noise of MOSFETs Using the 2D Device Simulator";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 400 - 403.
  
  
• M. Nedjalkov, T. Grasser, H. Kosina, S. Selberherr:
  "Boundary Condition Models for Terminal Current Fluctuations";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 152 - 155.
  
  
• H.-E. Nilsson, A. Martinez, M. Hjelm, E. Bellotti, K. Brennan:
  "Monte Carlo Simulation of Multi-Band Carrier Transport in Semiconductor Materials with Complex Unit Cells";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 214 - 217.
  
  
• M. Ogawa, T. Tanroku Miyoshi:
  "Analysis of Gate Tunneling Current in MOS Structures Using Quantum Mechanical Simulation";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 144 - 147.
  
  
• P. Oldiges, X. Wang, M.-K. Ieong, S. Fischer, K. Rim:
  "A Practical Approach to Modeling Strained Silicon NMOS Devices";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 292 - 295.
  
  
• A. Pakfar, A. Poncet, T. Schwartzmann, H. Jaouen:
  "A Unified Model of Dopant Diffusion in SiGe";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 62 - 65.
  
  
• V. Palankovski, N. Belova, T. Grasser, H. Puchner, S. Aronowitz, S. Selberherr:
  "A Methodology for Deep Sub-Quartermicron CMOS Technology Characterization";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 428 - 431.
  
  
• G. Pennington, N. Goldsman:
  "Modeling Semiconductor Carbon Nanotube Rectifying Heterojunctions";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 218 - 221.
  
  
• A. Pirovano, A.L. Lacaita, A.S. Spinelli:
  "Fully 2D Quantum-Mechanical Simulation of Nanoscale MOSFETs";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 94 - 97.
  
  
• A. Poncet, B. Vergnet, M. Mouis:
  "Finite Element Simulation of 2D Quantum Effects in Ultra-Short Channel MOSFETs with High-Κ Dielectric Gates";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 86 - 89.
  
  
• W. Pyka, C. Heitzinger, N. Tamaoki, T. Takase, T. Ohmine, S. Selberherr:
  "Monitoring Arsenic In-Situ Doping with Advanced Models for Polysilicon CVD";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 124 - 127.
  
  
• R. Quay, R. Schultheis, W. Kellner, V. Palankovski, S. Selberherr:
  "A Review of Modeling Issues for RF Heterostructure Device Simulation";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 432 - 435.
  
  
• K. Rajendran, W. Schoenmaker:
  "A Simple Modeling and Simulation of Complete Suppression of Boron Out-Diffusion in Si_1-xGe_x by Carbon Insertion";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 66 - 69.
  
  
• I. Raptis, N. Glezos:
  "Electron Beam Lithography Simulation for Sub-Quartermicron and High-Density Patterns";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 404 - 407.
  
  
• C. Ravariu, F. Ravariu, A. Rusu, D. Dobrescu, L. Dobrescu:
  "The Modeling of a SOl Micro-Electromechanical Sensor";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 328 - 331.
  
  
• C.A. Richter, E.M. Vogel, A.M. Hodge, A.R. Hefner:
  "Differences between Quantum-Mechanical Capacitance-Voltage Simulators";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 340 - 343.
  
  
• M. Ryzhii, V. Ryzhii:
  "Ensemble Monte Carlo Particle Modeling of InGaAs/lnP Uni-Traveling Carrier Photodiodes";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 312 - 315.
  
  
• R. Sattler, G. Wachutka, F. Plötz, S. Hoffmann:
  "System Level Modeling of an Electrostatic Torsional Actuator";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 178 - 181.
  
  
• W. Schoenmaker, P. Meuris, W. Magnus:
  "Ab-Initio Electrodynamic Modeling of On-Chip Back-End Structures";
  Talk: Conference, Athens, Greece (invited); 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 98 - 107.
  
  
• A.J. Scholten, R. Van Langevelde, L.F. Tiemeijer, R.J. Havens, D.B. Klaassen:
  "Compact MOS Modeling for RF CMOS Circuit Simulation";
  Talk: Conference, Athens, Greece (invited); 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 194 - 201.
  
  
• V. Senez, T. Hoffmann:
  "Elasto-Plastic Modeling of Microelectronics Materials for Accurate Prediction of the Mechanical Stresses in Advanced Silicon Technologies";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 58 - 61.
  
  
• E.N. Shauly, R. Ghez, Y.I. Komem:
  "Two-Dimensional Diffusion Characterization of Boron in Silicon Using Reverse Modeling";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 384 - 387.
  
  
• N. Shigyo:
  "Statistical Analysis of VLSI Using TCAD";
  Talk: Conference, Athens, Greece (invited); 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 202 - 209.
  
  
• S-P. Sim, P. Guo, B. Lee, C.-M. Liu, K.-K. Lee, C.Y. Yang:
  "Parameter and Coupling Ratio Extraction for SPICE-Compatible MACRO Modeling of Source Side Injection (SSI) Flash Cell";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 356 - 359.
  
  
• K. Sonoda, M. Tanizawa, K. Eikyu, K. Ishikawa, T. Kumamoto, H. Kouno, M. Inuishi:
  "Modeling of Bias Dependent Fluctuations of Flicker Noise of MOSFETs";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 190 - 193.
  
  
• B. Soree, W. Magnus, W. Schoenmaker:
  "Quantum Mechanical Balance Equations for Modeling Transport in Closed Electric Circuits";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 320 - 323.
  
  
• T. Tatsumi:
  "An Effective Methodology for Predicting the Distribution of MOSFET Device Characteristics Using Statistical TCAD Simulations";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 316 - 319.
  
  
• V. Theonas, G. Papaioannou:
  "Theoretical Calculation of a Charged Particle Detector's Response, Fabricated by Semi-Insulating GaAs";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 360 - 363.
  
  
• H. Van Meer, K. De Meyer:
  "Two-Dimensional Model for the Subthreshold Slope in Deep Submicron Fully Depleted SOI MOSFETs";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 238 - 241.
  
  
• D. Villanueva, P. Moens, K. Rajendran, W. Schoenmaker:
  "A Novel Model for Boron Diffusion in SiGe Strained Layers Based on a Kinetics Driven Ge-B Pairing Mechanism";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 22 - 25.
  
  
• A.T. Voutsas, H. Kisdarjono, R. Solanki, A. Kumar:
  "Numerical Simulation of Non-Equilibrium, Ultra-Rapid Heating of Si Thin Films by Nanosecond-Pulse Excimer Laser";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 132 - 135.
  
  
• K. Vutova, G. Mladenov, I. Raptis:
  "Determination of the Radiation Efficiency, Contrast and Sensitivity in Electron and Ion Lithography";
  Poster: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 440 - 443.
  
  
• A. Wakabayashi, Y. Mitani, D. Kasai, K. Horio:
  "Numerical Modeling of Impact-Ionization Effects on Gate-Lag Phenomena in GaAs MESFETs";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 210 - 213.
  
  
• J.R. Watling, A. R. Brown, A. Asenov, D.K. Ferry:
  "Quantum Corrections in 3D Drift-Diffusion Simulations of Decanano MOSFETs Using an Effective Potential";
  Talk: Conference, Athens, Greece; 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 82 - 85.
  
  
• Z. Yu, R.W. Dutton, D.W. Yergeau, M.G. Ancona:
  "Macroscopic Quantum Carrier Transport Modeling";
  Talk: Conference, Athens, Greece (invited); 2001-09-05 - 2001-09-07; in: "Proc. of SISPAD", (2001), 3-211-83708-6; 1 - 9.