SISPAD 2000 Proceedings

• A. Abramo, L. Selmi, Z. Yu, R.W. Dutton:
  "Well-Tempered MOSFETs: 1D versus 2D Quantum Analysis";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 188 - 191.
  
  
• M.G. Ancona, B.A. Biegel:
  "Nonlinear Discretization Scheme for the Density-Gradient Equations";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 196 - 199.
  
  
• S. Aronowitz, H. Puchner, V. Zubkov:
  "Effects of Nitrogen on the Activation/Deactivation of Boron and Indium in n-Channel CMOS Devices";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 159 - 162.
  
  
• A. Asenov, S. Kaya:
  "Effect of Oxide Interface Roughness on the Threshold Voltage Fluctuations in Decanano MOSFETs with Ultrathin Gate Oxides";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 135 - 138.
  
  
• I. Avci, H. Rueda, M. Law:
  "Model for the Evolution of Dislocation Loops in Silicon";
  Poster: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 210 - 213.
  
  
• K. Banoo, M.S. Lundstrom, R.K. Smith:
  "Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 50 - 53.
  
  
• I. Bork, W. Molzer:
  "Appropriate Initial Damage Conditions for "Three-Stream" Point Defect Diffusion Models";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 175 - 178.
  
  
• J.D. Bude:
  "MOSFET Modeling into the Ballistic Regime";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 23 - 26.
  
  
• F.M. Bufler, A. Schenk, W. Fichtner:
  "Efficient Monte Carlo Device Simulation with Automatic Error Control";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 27 - 30.
  
  
• S. Chakravarthi, S. Dunham:
  "Modeling of Boron Deactivation/Activation Kinetics during Ion Implant Annealing";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 167 - 170.
  
  
• F. Charlet, C. Bermond, S. Putot, G. Le Carval, B. Flechet:
  "Extraction of (R,L,C,G) Interconnect Parameters in 2D Transmission Lines Using Fast and Efficient Numerical Tools";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 87 - 89.
  
  
• W. Chung, J. Oh, T.-K. Kim, J. Shin, Y. Park, K. Seo, S. Ha, J.-T. Kong:
  "Integrated Simulation of Equipment and Topography for Plasma Etching in the DRM Reactor";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 127 - 130.
  
  
• D. Connelly, M. Foisy:
  "Improved Device Technology Evaluation and Optimization";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 155 - 158.
  
  
• J.L. Egley, B. Polsky, B. Min, E. Lyumkis, O. Penzin, M. Foisy:
  "SOI Related Simulation Challenges with Moment Based BTE Solvers";
  Poster: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 241 - 244.
  
  
• K. Eikyu, H. Takashino, M. Kidera, A. Teramoto, H. Ulmeda, K. Ishikawa, M. Inuishi:
  "Extraction of the Physical Oxide Thickness Using the Electrical Characteristics of MOS Capacitors";
  Poster: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 257 - 260.
  
  
• T. Endoh, T. Funai, H. Sakuraba, F. Masuoka:
  "A High-Signal Swing Pass Transistor Logic Using Surrounding Gate Transistor";
  Poster: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 273 - 275.
  
  
• T. Ezaki, H. Nakasato, T. Yamamoto, M. Hane:
  "Simulation of Hot Hole Currents in Ultrathin Silicon Dioxides: The Relationship between Time to Breakdown and Hot Hole Currents";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 34 - 37.
  
  
• P. Fastenko, S. Dunham:
  "Modeling of Initial Stages of Annealing for Amorphizing Arsenic Implants";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 171 - 174.
  
  
• T. Füllenbach, K. Stüben, S. Mijalkovic:
  "Application of an Algebraic Multigrid Solver to Process Simulation Problems";
  Poster: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 225 - 228.
  
  
• J.-S. Goo, K.-H. Oh, C.-H. Choi, Z. Yu, T. Lee, R. Dutton:
  "Guidelines for the Power Constrained Design of a CMOS Tuned LNA";
  Poster: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 269 - 272.
  
  
• Z. Han, N. Goldsman, C.-K. Lin:
  "2D Quantum Transport Device Modeling by Self-Consistent Solution of the Wigner and Poisson Equations";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 62 - 65.
  
  
• M. Hane, T. Ikezawa, G.H Gilmer:
  "Di-Interstitial Diffusivity and Migration Path Calculations Based on Tight-Binding Hamiltonian Molecular Dynamics";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 119 - 122.
  
  
• H. Hioki, T. Endoh, H. Sakuraba, M. Lenski, F. Masuoka:
  "An Analysis of Program and Erase Operation for FC-SGT Flash Memory Cells";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 116 - 118.
  
  
• T. Hiramoto, H. Majima:
  "Characteristics of Silicon Nanoscale Devices";
  Talk: Conference, Washington, USA (invited); 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 179 - 183.
  
  
• Y. Hu, K. Mayaram:
  "Periodic Steady-State Analysis for Coupled Device and Circuit Simulation";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 90 - 93.
  
  
• R.B. Iverson, Y.L. Le Coz, B. Kleveland, S.S. Wong:
  "A Multiscale Random-Walk Thermal Analysis Methodology for Complex IC Interconnect Systems";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 84 - 86.
  
  
• C. Jungemann, B. Neinhüs, B. Meinerzhagen:
  "Spatial Analysis of the Electron Transit Time in a Silicon/Germanium Heterojunction Bipolar Transistor by Drift-Diffusion, Hydrodynamic, and Full-Band Monte Carlo Device Simulation";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 42 - 45.
  
  
• Y. Kim, K. Yoo, H. Kim, B. Yoon, Y. Park, S. Ha, J.-T. Kong:
  "CHAMPS: CHemicAl-Mechanical Planarization Simulator";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 123 - 126.
  
  
• N. Kusunoki, T. Shimizu, H. Hiroaki:
  "A Novel Simulation Method for Oxynitridation and Re-Oxidation";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 139 - 142.
  
  
• K. Lee, T.-K. Kim:
  "Prediction of SiO₂ Sputtering Yield Using Molecular Dynamics Simulation";
  Poster: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 214.
  
  
• S. Lee, H. Yu:
  "A New Method to Determine Channel Mobility Model Parameters in Submicron MOSFETs using Measured S-Parameters";
  Poster: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 253 - 256.
  
  
• M.S. Lundstrom, R. Zhibin, S. Datta:
  "Essential Physics of Carrier Transport in Nanoscale MOSFETs";
  Talk: Conference, Washington, USA (invited); 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 1 - 5.
  
  
• Y. Ma, Lit Liu, L. Tian, Z. Yu, Zhi Li:
  "Comprehensive Analytical Charge Control and I-V Model of Modern MOSFETs by Fully Comprising Quantum Mechanical Effects";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 112 - 115.
  
  
• K. Matsuzawa, H. Kawashima, K. Ouchi:
  "Simulation of Self-Heating and Contact Resistance Influences on n-MOSFETs";
  Poster: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 237 - 240.
  
  
• K. Matsuzawa, N. Sano, K. Natori, M. Mukai, N. Nakayama:
  "Monte Carlo Simulation of Current Fluctuation at Actual Contact";
  Poster: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 233 - 236.
  
  
• C.C. McAndrew:
  "Predictive Technology Characterization, Missing Links between TCAD and Compact Modeling";
  Talk: Conference, Washington, USA (invited); 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 12 - 17.
  
  
• I MeiKei, W. Wong, Y. Taur, P. Oldiges, D. Frank:
  "DC and AC Performance Analysis of 25nm Symmetric/Asymmetric Double-Gate, Back-Gate and Bulk CMOS";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 147 - 150.
  
  
• M. Miura-Mattausch, S. Ooshiro, M. Suetake:
  "Circuit Simulation Models for Coming MOSFET Generations";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 106 - 111.
  
  
• P. Moens, M. Tack, H. Van Hove, M. Vermandel, D. Bolognesi:
  "Development of an Optimised 40V p-DMOS Device by Use of a TCAD Design of Experiment Methodology";
  Poster: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 276 - 279.
  
  
• A. Mokhberi, P. Griffin, J. Plummer:
  "Kinetics of Boron Activation";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 163 - 166.
  
  
• S. Mudanai, Y.-Y. Fan, Q. Ouyang, A. Tasch, F. Register, D.L. Kwong, S. Banerjee:
  "Modeling of Direct Tunneling Current through Gate Dielectric Stacks";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 200 - 203.
  
  
• M. Ogawa, R. Tominaga, T. Miyoshi:
  "Multi-Band Simulation of Interband Tunneling Devices Reflecting Realistic Band Structure";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 66 - 69.
  
  
• T. Ohta, M. Fujinaga, M. Kimura, T. Wada, K. Nishi:
  "A Simulation System for Capacitance Variation by CMP Process Including Defocus Effect";
  Talk: Conference, Washington,USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 102 - 105.
  
  
• P. Oldiges, Q. Lin, K. Petrillo, M. Sanchez, M. Ieong, M. Hargrove:
  "Modeling Line Edge Roughness Effects in Sub-100 Nanometer Gate Length Devices";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 131 - 134.
  
  
• Q. Ouyang, X.D. Chen, S. Mudanai, D.L. Kencke, X. Wang, A. Tasch, L.F. Register, S.K. Banerjee:
  "Two-Dimensional Bandgap Engineering in a Novel Si-SiGe p-MOSFET with Enhanced Device Performance and Scalability";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 151 - 154.
  
  
• V. Palankovski, S. Selberherr, R. Quay, R. Schultheis:
  "Analysis of HBT Behavior after Strong Electrothermal Stress";
  Poster: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 245 - 248.
  
  
• P. Palestri, L. Selmi, F. Hurkx, J. Slotboom:
  "A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJTs up to High Currents";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 46 - 49.
  
  
• P. Palestri, L. Selmi, M. Pavesi, F. Widdershoven, E. Sangiorgi:
  "Coupled Monte Carlo Simulation of Si and SiO₂ Transport in MOS Capacitors";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 38 - 41.
  
  
• J.-K. Park, K.-H. Lee, J.-H. Lee, Y.-K. Park, J.-T. Kong:
  "An Exhaustive Method for Characterizing the Interconnect Capacitance Considering the Floating Dummy-Fills by Employing an Efficient Field Solving Algorithm";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 98 - 101.
  
  
• G. Pennington, N. Goldsman, J. McGarrity, F. Crowne:
  "A Physics-Based Empirical Pseudopotential Model for Calculating Band Structures of Simple and Complex Semiconductors";
  Poster: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 229 - 232.
  
  
• J.R. Phillips:
  "Generic Approaches to Parasitic Extraction Problems";
  Talk: Conference, Washington, USA (invited); 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 78 - 83.
  
  
• C. Pladdy, I. Avci, M.E. Law:
  "Optimum Node Positioning in Adaptive Grid Refinement and the Delauney-Voroni Algorithm";
  Poster: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 222 - 224.
  
  
• R. Quay, W. Kellner, T. Grasser, V. Palankovski, S. Selberherr:
  "Simulation of Gallium-Arsenide Based High Electron Mobility Transistors";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 74 - 77.
  
  
• K. Rajendran, W. Schoenmarker, S. Decoutere, M. Caymax:
  "Simulation of Boron Diffusion in Strained Si_1-xGe_x Epitaxial Layers";
  Poster: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 206 - 209.
  
  
• S. Reggiani, A. Bertoni, P. Bordone, R. Brunetti, C. Jacoboni, M. Rudan, G. Baccarani:
  "Two-Qbit Gates Based on Coupled Quantum Wires";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 184 - 187.
  
  
• R. Sabelka, C. Harlander, S. Selberherr:
  "The State of the Art in Interconnect Simulation";
  Talk: Conference, Washington, USA (invited); 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 6 - 11.
  
  
• S. Saxena, P. McNamara, A. Shibkov, V. Axelrad, C. Guardiani:
  "Circuit Device Co-Design for High Performance Mixed-Signal Technologies";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 143 - 146.
  
  
• W. Schoenmarker, W. Magnus:
  "Nuclear Modeling of Quantum Gate Leakage Currents with Sensitivity Analysis";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 204 - 205.
  
  
• A. Spinelli, A. Benvenuti, L. Conserva, A. Lacaita, A. Pacelli:
  "Quantum-Mechanical 2D Simulation of Surface and Buried-Channel p-MOS";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 192 - 195.
  
  
• M. Suetake, K. Suematsu, H. Nagakura, M. Mattausch, H.J. Mattausch, S. Kumashiro, T. Yamaguchi, S. Odanaka, N. Nakayama:
  "HiSIM: A Drift-Diffusion-Based Advanced MOSFET Model for Circuit Simulation with Easy Parameter Extraction";
  Poster: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 261 - 264.
  
  
• P.G. Sverdrup, K. Banerjee, C. Dai, W.-K. Shih, R.W. Dutton, K.E. Goodson:
  "Sub-Continuum Thermal Simulations of Deep Submicron Devices under ESD Conditions";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 54 - 57.
  
  
• R. Thalhammer, F. Hille, G. Wachutka:
  "Optimizing Free Carrier Absorption Measurements for Power Devices by Physically Rigorous Simulation";
  Poster: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 249 - 252.
  
  
• S.K. Theiss, M.-J. Caturla, T.J. Lenosky, B. Sadigh, T. Diaz de la Rubia, M.D. Giles, M.A. Foad:
  "First-Principles-Based Predictive Simulations of B Diffusion and Activation in Ion Implanted Si";
  Talk: Conference, Washington, USA (invited); 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 18 - 22.
  
  
• O. Tornblad, P.G. Sverdrup, D. Yergeau, Z. Yu, K.E. Goodson, R.W. Dutton:
  "Modeling and Simulation of Phonon Boundary Scattering in PDE-Based Device Simulators";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 58 - 61.
  
  
• Y. Tosaka, S. Satoh:
  "Simulation of Multiple-Bit Soft Errors Induced by Cosmic Ray Neutrons in DRAMs";
  Poster: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 265 - 268.
  
  
• M. Wagner, H. Mizuta, K. Nakazato:
  "A Fast Three-Dimensional MC Simulator for Tunneling Diodes";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 31 - 33.
  
  
• X. Wang, D.L. Kencke, K.C. Liu, A.F. Tasch Jr., L.F. Register, S.K. Banerjee:
  "Electron Transport Properties in Novel Orthorhombically Strained Silicon Material Explored by the Monte Carlo Method";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 70 - 73.
  
  
• S. Yoon, O. Kwon, S. Yoon:
  "A Mesh Generation Algorithm for Complex Geometry";
  Poster: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 218 - 221.
  
  
• S. Yoon, O. Kwon, S. Yoon, H. Jung, T. Won:
  "An Extracting Capacitance in a Stacked DRAM Cell by Numerical Method";
  Talk: Conference, Washington, USA; 2000-09-06 - 2000-09-08; in: "Proc. of SISPAD", (2000), 0-7803-6279-9; 218 - 221.