SISPAD 1999 Proceedings

• M.G. Ancona, Z. Yu, R.W. Dutton, P.V. Voorde, M. Cao, D. Vook:
  "Density-Gradient Analysis of Tunneling in MOS Structures with Ultrathin Oxides";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 235 - 238.
  
  
• G. Baccarani, S. Reggiani:
  "A Compact Double-Gate MOSFET Model Comprising Quantum-Mechanical and Non-Static Effects";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 11 - 14.
  
  
• E. Bär, J. Lorenz:
  "Control and Improvement of Surface Triangulation for Three-Dimensional Process Simulation";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 75 - 78.
  
  
• I. Bork, W. Molzer, C. D. Nguyen:
  "Optimization of Temperature-Time Profiles in Rapid Thermal Annealing";
  Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 107 - 110.
  
  
• F.M. Bufler, P.D. Yoder, W. Fichtner:
  "Simple Phase-Space Trajectory Calculation for Monte Carlo Device Simulation Including Screened Impurity Scattering";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 31 - 34.
  
  
• A. Burenkov, K. Tietzel, A. Hössinger, J. Lorenz, H. Ryssel, S. Selberherr:
  "A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 55 - 58.
  
  
• E. Cassan, S. Galdin, P. Dollfus, P. Hesto:
  "Modeling of Direct Tunneling Gate Current in Ultrathin Gate Oxide MOSFETs: A Comparison between Simulators";
  Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 115 - 118.
  
  
• L. Colalongo, M. Valdinoci, M. Rudan:
  "A Physically-Based Analytical Model for a-Si Devices Including Drift and Diffusion Currents";
  Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 179 - 182.
  
  
• W. Fichtner, J. Krause, B. Schmithüsen, L. Villablanca:
  "New Developments and Old Problems in Grid Generation and Adaption for TCAD Applications";
  Talk: Conference, Kyoto, Japan (invited); 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 67 - 70.
  
  
• P. Fleischmann, B. Haindl, R. Kosik, S. Selberherr:
  "Investigation of a Mesh Criterion for Three-Dimensional Finite Element Diffusion Simulation";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 71 - 74.
  
  
• T. Fuse, S. Kawanaka, K. Inho, T. Shino:
  "A Compact Lateral SOI BJT Model for RF Ciruit Simulation";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 19 - 22.
  
  
• A. Ghetti, A. Hamad, P.J. Silverman, H. Vaidya, N. Zhao:
  "Self-Consistent Simulation of Quantization Effects and Tunneling Current in Ultrathin Gate Oxide MOS Devices";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 239 - 242.
  
  
• G.H. Gilmer, L. Pelaz, M. Jaraiz, H.-J. Gossmann, C.S. Rafferty:
  "Atomistic Simulations of Ion Implantation and Diffusion";
  Talk: Conference, Kyoto, Japan (invited); 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 43 - 46.
  
  
• T. Grasser, H. Kosina, S. Selberherr:
  "Consistent Comparison of Drift-Diffusion and Hydro-Dynamic Device Simulations";
  Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 151 - 154.
  
  
• B. Haindl, R. Kosik, P. Fleischmann, S. Selberherr:
  "Comparison of Finite Element and Finite Box Discretization for Three-Dimensional Diffusion Modeling Using AMIGOS";
  Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 131 - 134.
  
  
• Z. Han, C.-K. Lin, N. Goldsman, I. Mayergoyz, S. Yu, M. Stettler:
  "Gate Leakage Current Simulation by Boltzmann Transport Equation and its Dependence on the Gate Oxide Thickness";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 247 - 250.
  
  
• M. Handtmann, R. Aigner, F. Plötz, G. Wachutka:
  "Macromodel for Micromechanical, Multi-Electrode Structures in Force Feedback Control Systems";
  Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 183 - 186.
  
  
• M. Hane, T. Ikezawa, A. Furukawa:
  "Molecular Dynamics Calculation Studies of Interstitial-Si Diffusion and Arsenic Ion Implantation Damage";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 47 - 50.
  
  
• J. Herbaux, V. Senez, T. Hoffmann, R. Bossut, D. Brocard:
  "Three-Dimensional Process Simulation of Rapid Thermal Annealing Using a Five Species Point Defects Diffusion Model";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 59 - 62.
  
  
• M. Hiroi, T. Ikezawa, M. Hane, A. Furukawa:
  "Evaluation of Excess Interstitial Silicon Amount Using Delta-Doped Boron Markers Grown by UHV-CVD";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 63 - 66.
  
  
• A. Hössinger, M. Radi, B. Scholz, T. Fahringer, E. Langer, S. Selberherr:
  "Parallelization of a Monte Carlo Ion Implantation Simulator for Three-Dimensional Crystalline Structures";
  Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 103 - 106.
  
  
• T. Iizuka, T. Yoshida:
  "Transport-Reaction Model for Interface State Build-Up at the Si-SiO₂ Interface";
  Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 123 - 126.
  
  
• H. Inui, T. Ohta:
  "Accurate Resist Profile Simulation for Large Area OPC";
  Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 111 - 114.
  
  
• S. Izumi, T. Kawakami, S. Sakai:
  "A FEM-MD Combination Method for Silicon";
  Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 143 - 146.
  
  
• J. Jang, T. Arnborg, Z. Yu, R.W. Dutton:
  "Circuit Model for Power LDMOS Including Quasi-Saturation";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 15 - 18.
  
  
• W. Kaindl, M. Lades, G. Wachutka:
  "Transient Electrothermal Analysis of Dynamic Punch-Through in SiC Power Devices";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 231 - 234.
  
  
• K. Kato, T. Uda, K. Terakura:
  "Atomistic Simulation of Si Oxidation";
  Talk: Conference, Kyoto, Japan (invited); 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 187 - 190.
  
  
• S. Keith, C. Jungemann, S. Decker, B. Neinhüs, M. Bartels, B. Meinerzhagen:
  "Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 219 - 222.
  
  
• T.A. Kevenaar, E.J. Maten:
  "RF IC Simulation: State-of-the-Art and Future Trends";
  Talk: Conference, Kyoto, Japan (invited); 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 7 - 10.
  
  
• S. Kumashiro:
  "Advanced Process/Device Modeling and its Impact on the CMOS Design Solution";
  Talk: Conference, Kyoto, Japan (invited); 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 83 - 86.
  
  
• J . Lee, H. Kim, H.-G. Lee, T. Won:
  "Atomic Scale Simulation of Extended Defects: Monte Carlo Approach";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 51 - 54.
  
  
• B.K. Liew, C.-C. Wang, C.H. Diaz, S.Y. Wu, Y.C. Sun, Y.F. Lin, D.S. Kuo, H.T. Lin, A. Yen:
  "Application of Technology CAD in Process Development for High Performance Logic and System-on-Chip in IC Foundry";
  Talk: Conference, k (invited); 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 3 - 6.
  
  
• C.-K. Lin, N. Goldsman, Z. Han, I. Mayergoyz, S. Yu, M. Stettler, S. Singh:
  "Frequency Domain Analysis of the Distribution Function by Small Signal Solution of the Boltzmann and Poisson Equations";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 39 - 42.
  
  
• C.-K. Lin, N. Goldsman, I. Mayergoyz, S. Aronowitz, N. Belova:
  "Advances in Spherical Harmonic Device Modeling: Calibration and Nanoscale Electron Dynamics";
  Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 167 - 170.
  
  
• K. Matsuzawa, K. Uchida, A. Nishiyama:
  "Monte Carlo Simulation of 50nm Devices with Schottky Contact Model";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 35 - 38.
  
  
• N. Miura, H. Hayashi, K. Fukuda, K. Nishi:
  "Engineering Systematic Yield of Fully Depleted SOI MOSFET";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 87 - 90.
  
  
• M. Nedjalkov, H. Kosina, S. Selberherr:
  "Monte Carlo Method for Direct Computation of the Small Signal Kinetic Coefficients";
  Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 155 - 158.
  
  
• M. Ogawa, T. Sugano, R. Tominaga, T. Miyoshi:
  "Full-Band Quantum Transport Simulation Based on Tight-Binding Green´s Function Method";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 223 - 226.
  
  
• S.-Y. Oh, W.-Y. Jung, J.-T. Kong, K.-H. Lee:
  "Interconnect Modeling for VLSIs";
  Talk: Conference, Kyoto, Japan (invited); 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 203 - 206.
  
  
• T. Ohta, T. Toda, H. Ueno:
  "A Practical CMP Profile Model for LSI Design Application";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 195 - 198.
  
  
• V. Palankovski, S. Selberherr, R. Schultheis:
  "Simulation of Heterojunction Bipolar Transistors on Gallium-Arsenide";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 227 - 230.
  
  
• S. Putot, F. Charlet, P. Witomski:
  "A New Algorithm for Interconnect Capacitance Extraction Based on a Fictitious Domain Method";
  Talk: SISPAD, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 79 - 82.
  
  
• W. Pyka, P. Fleischmann, B. Haindl, S. Selberherr:
  "Linking Three-Dimensional Topography Simulation with High Pressure CVD Reaction Kinetics";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 199 - 202.
  
  
• L. Roh, C. Bischof, N. Chang, K.-K. Lee, V. Kanevsky, O.S. Nakagawa, S.-Y. Oh:
  "Fast Statistical-Based Interconnect Modeling Using Automatic Differentiation";
  Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 159 - 162.
  
  
• S. Roy, S. Kaya, A. Asenov, J.R. Barker:
  "RF Analysis Methodology for Si and SiGe FETs Based on Transient Monte Carlo Simulation";
  Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 147 - 150.
  
  
• N. Sano:
  "Sub-0.1μm Device Simulation Technology: Another Problems for Monte Carlo Simulations";
  Talk: Conference, Kyoto, Japan (invited); 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 23 - 26.
  
  
• H. Sato, Y. Ito, H. Kunitomo, H. Baba, S. Isomura, H. Masuda:
  "An Efficient and Accurate Delay Library Generation with RSM";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 95 - 98.
  
  
• P. Scheubert, P. Awakowicz, R. Schwefel, G. Wachutka:
  "Coupled Hydrodynamic and Electrodynamic Modeling of an Transformer Coupled Plasma (TCP) for Semiconductor Processing";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 191 - 194.
  
  
• A. Scholze, A. Schenk, W. Fichtner:
  "Effect of the Tunneling Rates on the Conductance Characteristics of Single-Electron Transistors";
  Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 171 - 174.
  
  
• L. Scozzoli, S. Reggiani, M. Rudan:
  "Homogeneous Transport in Silicon Dioxide Using the Spherical-Harmonics Expansion of the BTE";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 251 - 254.
  
  
• K. Sonoda, M. Tanizawa, K. Ishikawa, T. Nishimura:
  "Circuit-Level Electrothermal Simulation of Electrostatic Discharge in Integrated Circuits";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 215 - 218.
  
  
• R. Strasser, R. Plasun, S. Selberherr:
  "Practical Inverse Modeling with SIESTA";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 91 - 94.
  
  
• M. Suetake, M. Miura-Mattausch, H.J. Mattausch, S. Kumashiro, N. Shigyo, S. Odanaka, N. Nakayama:
  "Precise Physical Modeling of the Reverse Short Channel Effect for Circuit Simulation";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 207 - 210.
  
  
• K. Tanaka, A. Notsu, A. Furukawa:
  "A Three-Dimensional Mesh Generation Method with Precedent Triangulation of Boundary";
  Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 139 - 142.
  
  
• K. Taniguchi:
  "Collaboration of Universities and Industries for R&D of TCAD in Japan";
  Talk: Conference, Kyoto, Japan (invited); 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 1 - 2.
  
  
• T. Tatsumi, H. Nakayama, M. Mukai, Y. Komatsu:
  "Practical Virtual Cell Designing Environment";
  Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 163 - 166.
  
  
• M. Ullmann, H. Goebel, H. Hoenigschmid, T. Haneder, G.W. Dietz:
  "An Accurate Compact Model for Ferroelectric Memory Field Effect Transistors";
  Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 175 - 178.
  
  
• S. Uno, Y. Kamakura, K. Okada, K. Taniguchi:
  "Statistical Monte Carlo Simulation for Dielectric Breakdown in Oxide Thin Films: Effect of Non-Unifomity of Electron Trap Generation";
  Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 119 - 122.
  
  
• M. Valdinoci, D. Ventura, M.C. Vecchi, M. Rudan, G. Baccarani, F. Illien, A. Stricker, L. Zullino:
  "Impact Ionization in Silicon at Large Operating Temperature";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 27 - 30.
  
  
• T. Wada, H. Umimoto, M. Fujinaga, M. Kimura, T. Uchida, K. Suzuki, Y. Akiyama, M. Hane, M. Takenaka, N. Miura, N. Kontani:
  "A Three-Dimensional Process Simulator Based on an Open Architecture";
  Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 127 - 130.
  
  
• A. Wettstein, A. Schenk, W. Fichtner:
  "Simulation of Direct Tunneling through Stacked Gate Dielectrics by a Fully Integrated 1D Schrödinger-Poisson Solver";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 243 - 246.
  
  
• S. Yoon, J . Lee, T. Won:
  "A Novel Advancing Front Meshing Algorithm for 3D Parallel FEM";
  Poster: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 135 - 138.
  
  
• K. Yoshitomi, T. Tatsumi, N. Nakauchi, M. Mukai, Y. Komatsu:
  "NILE: A Novel Platform-Independent and Efficient Distributed Simulation System for TCAD";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 99 - 102.
  
  
• X.Y. Zhang, Z. Yu, R.W. Dutton:
  "A Quasi-Mixed-Mode MOSFET Model for Simulation and Prediction of Substrate Resistance under ESD Stress and Layout Variations";
  Talk: Conference, Kyoto, Japan; 1999-09-06 - 1999-09-08; in: "Proc. of SISPAD", (1999), 4-930813-98-0; 211 - 214.