SISPAD 1998

SISPAD 1998 Proceedings

A. Abramo, C. Fiegna, P. Casarini:
"Quantum Effects in the Simulation of Conventional Devices";
Talk: Conference, Leuven, Belgium (invited); 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 121 - 128.
A. Asenov:
"Statistically Reliable 'Atomistic' Simulation of Sub-100nm MOSFETs";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 223 - 226.
E. Bär, W. Henke, S. List, J. Lorenz:
"Integrated Three-Dimensional Topography Simulation and its Application to Dual-Damascene Processing";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 12 - 15.
Y. Ban, T. Won:
"3D Modeling of Sputter Process with Monte Carlo Method";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 161 - 164.
S. Biesemans, K. De Meyer:
"Influence of the S/D Architecture on the V_T of Deep Submicron MOSFETs";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 308 - 311.
P. Böhm, E. Falck, J. Sigg, G. Wachutka:
"Continuous Field Analysis of Distributed Parasitic Effects Caused by Interconnects in High Power Semiconductor Modules";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 340 - 343.
P. Bordone, R. Brunetti, M. Pascoli, C. Jacoboni:
"Quantum Electron-Phonon Interaction for Transport in Open Nanostructures";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 207 - 210.
A. Bournel, P. Dollfus, P. Bruno, P. Hesto:
"Monte Carlo Modeling of Spin Relaxation in a Ill-V Two-Dimensional Electron Channel";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 173 - 176.
D. Brocard, V. Senez, S. Bozek, J. Herbaux, R. Bossut:
"Automatic Mesh Refinement for 3D Numerical Simulation of Thermal Diffusion in Silicon";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 97 - 100.
F.M. Bufler, S. Keith, B. Meinerzhagen:
"Anisotropic Ballistic In-Plane Transport of Electrons in Strained Si";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 239 - 242.
S. Chakravarthi, S.T. Dunham:
"A Simple Continuum Model for Simulation of Boron Interstitial Clusters Based on Atomistic Calculations";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 55 - 58.
L.-F. Chang, Y.-M. Hsu, M.-H. Chi:
"Minimizing Bitline Coupling Noise in DRAM with Capacitor-Equiplanar-to-Bitline (CEB) Cell Structure";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 324 - 327.
S. Chaudhry, P.A. Layman, J.S. Huang, A.S. Oates, S.M. Merchant, J.Q. Zhao:
"Correlation of Finite Element Stress Simulations with Electromigration-Induced Fractures in Tungsten Plug Structures";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 332 - 335.
T. Chen, D.W. Yergeau, R.W. Dutton:
"A Common Mesh Implementation for both Static and Moving Boundary Process Simulations";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 101 - 104.
C.-H. Choi, Z. Yu, R.W. Dutton:
"Elimination of Non-Simultaneous Triggering Effects in Finger-Type ESD Protection Tansistors Using Heterojunction Buried Layer";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 304 - 307.
L. Colalongo, M. Valdinoci, M. Rudan:
"Modeling of Particle-Irradiated Devices";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 396 - 399.
N. Collaert, K. De Meyer:
"Influence of the Ge Concentration on the Threshold Voltage and Subthreshold Slope of Nanoscale Vertical Si/SiGe p-MOSFETs";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 235 - 238.
M. Dauelsberg, L. Kadinski, C. Allenbach, M. Morstein:
"Modeling of Flow and Heat Transfer in a Vertical Reactor for the MOCVD of Zirconium-Based Coatings";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 22 - 25.
K. Dragosits, M. Knaipp, S. Selberherr:
"Two-Dimensional Simulation of Ferroelectric Nonvolatile Memory Cells";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 368 - 371.
R. Duffy, A. Concannon, A. Mathewson, C. De Graaf, M. Slotboom, R. Verhaar:
"Simulation Based Development of EEPROM Devices within a 0.35μm Process";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 376 - 379.
Y.E Egorov, Y.N. Makarov, I.N. Przhevalskij, R.A. Talalaev:
"Development of a Gas-Phase Chemistry Model for Numerical Prediction of MOVPE of GaN in Industrial Scale Reactors";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 20 - 21.
B. Fischer, K.R. Hofmann:
"Discretization of the Brillouin Zone by an Octree/Delaunay Method with Application to Full-Band Monte Carlo Transport Simulation";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 181 - 184.
F. Gamiz, J.A. Lopez-Villanueva, J.B. Roldan, J.E. Careeller:
"Simulation of Electron Mobility in Ultrathin Fully Depleted Single Gate SOl MOSFETs";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 113 - 116.
G. Garreton, L. Villablanca, N. Strecker, F. Fichtner:
"A Hybrid Approach for Building 2D and 3D Conforming Delaunay Meshes Suitable for Process and Device Simulation";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 185 - 188.
G.H. Gilmer, L. Pelaz, C. Rafferty, M. Jaraiz:
"Multiscale Modeling of the Implantation and Annealing of Silicon Devices";
Talk: Conference, Leuven, Belgium (invited); 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 46 - 47.
E. Gondro, F. Schuler:
"A Physics Based Resistance Model of the Overlap Regions in LDD MOSFETs";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 267 - 270.
R. Goossens:
"TCAD at the SRC";
Talk: Conference, Leuven, Belgium (invited); 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 1 - 2.
B. Govoreanu, J. Kopalides, W. Schoenmaker, G. Dima, O. Mitrea, M.D. Profirescu:
"A Hybrid Technique for TCAD Modeling and Optimization";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 73 - 76.
T. Grasser, V. Palankovski, G. Schrom, S. Selberherr:
"Hydrodynamic Mixed-Mode Simulation";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 247 - 250.
T. Grasser, R. Strasser, M. Knaipp, K. Tsuneno, H. Masuda, S. Selberherr:
"Device Simulator Calibration for Quartermicron CMOS Devices";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 93 - 96.
L. Gruber, N. Khalil, D.A. Bell, J. Faricelli:
"Modeling Process and Transistor Variation for Circuit Performance Analysis";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 81 - 84.
Z. Han, N. Goldsman, M. Stettler:
"Combining the Scattering Matrix and Spherical Harmonic Methods for Semiconductor Modeling";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 177 - 180.
K. Hess:
"Simulation of Carrier Transport and Hot Phonon Effects in Quantum Well Laser Diodes";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 275.
N. Hitschfeld, M.-C. Rivara, M. Palma:
"Improving the Quality of Delaunay Triangulations for the Control Volume Discretization Method";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 189 - 192.
M. Ieong, R. Logan, J. Slinkman:
"Efficient Quantum Correction Model for Multi-Dimensional CMOS Simulations";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 129 - 132.
M. Isler, D. Liebig, K. Schiinemann:
"Efficient Modeling of Spatially Varying Degeneracy in Monte Carlo Particle Simulation of Highly Doped Submicron HEMT";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 169 - 172.
T. Iwasaki, H. Miura:
"Molecular Dynamics Analysis of Grain-Boundary Grooving in Thin Film Interconnects for ULSls";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 344 - 347.
C. Jungemann, B. Meinerzhagen:
"On the Modeling of CV Data for State-of-the-Art CMOS Technologies: Do We Need to Include Fast Interface States?";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 227 - 230.
G. Kaiblinger-Grujin, T. Grasser, S. Selberherr:
"A Physically-Based Electron Mobility Model for Silicon Device Simulation";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 312 - 315.
V. Kartal, W. Gerlach:
"Investigation of Non-Punch-Through IGBTs with Different Trench Designs";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 300 - 303.
R. Kasnavi, P. Griffin, J.D. Plummer:
"Dynamics of Arsenic Dose Loss at the SiO₂ Interface during TED";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 48 - 50.
B.G. Ko, S.H. Yoon, K.D. Kwack:
"Modeling and Simulation of Oxygen Precipitation in CZ Silicon";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 388 - 391.
V. Koldyaev, S. Decoutere, R. Kuhn, L. Deferm:
"A Comprehensive Model of a VLSI Spiral Inductor Derived from the First Principles";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 34 - 37.
N. Kotani:
"TCAD in Selete";
Talk: Conference, Leuven, Belgium (invited); 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 3 - 7.
Z. Krivokapic, W.D. HeavIin, D.S. Bang:
"Integration of Lithography and Etch Simulations";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 8 - 11.
S. Kumashiro, H. Kawaguchi, K. Imai, H. Matsumoto:
"Analysis of the Asymmetric Breakdown Characteristics of Trench Isolation Structure by Using TCAD";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 259 - 262.
T. Kunikiyo, K. Sonoda, T. Yamashita, K. Ishikawa, T. Nishimura:
"3D Simulation of an Enhanced Field-Funneling Effect on the Collection of Alpha-Particle Generated Carriers in p^- on p⁺ Epitaxial Substrates";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 400 - 403.
M. Lades, G. Wachutka:
"Simulation of Dynamic Ionization Effects in 6H-SiC Devices";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 251 - 254.
F. Lau:
"Characterization of the Corner Effect by Composed 2D Device Simulations";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 263 - 266.
C.-K. Lin, N. Goldsman, C.-H. Chang, I. Mayergoyz, S. Aronowitz, J. Dong, N. Belova:
"Extension of Spherical Harmonic Method to RF Transient Regime";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 42 - 45.
M. Lundstrom, C. Huster, K. Banoo, R. Venugopal:
"Scattering Theory of Carrier Transport in Semiconductor Devices";
Talk: Conference, Leuven, Belgium (invited); 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 215 - 222.
J. Marcon, S. Gautier, S. Koumetz, K. Ketata, M. Ketata:
"Simulation of Be Diffusion in the Base Layer of InGaAs/lnP Heterojunction Bipolar Transistors";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 243 - 246.
S. Marksteiner, H. Schiifer, T. Meister:
"Simulation of SiGe Epitaxial Growth for RF-Bipolar Transistors";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 38 - 41.
R. Martins, R. Sabelka, W. Pyka, S. Selberherr:
"Rigorous Capacitance Simulation of DRAM Cells";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 69 - 72.
C.C. McAndrew:
"Statistical Circuit Modeling";
Talk: Conference, Leuven, Belgium (invited); 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 288 - 295.
S. Mijalkovic, W. Joppich:
"Derived Boundary Conditions for Viscous Thermal Oxidation Equations in Pressure Potential Form";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 384 - 387.
K. Nakazato:
"Single Electron Memory Device Simulations";
Talk: Conference, Leuven, Belgium (invited); 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 201 - 202.
P. Oldiges, B. Knowlton, R. Flatley:
"Predictive Soft Error Rate Evaluation System";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 392 - 395.
V. Palankovski, G. Kaiblinger-Grujin, H. Kosina, S. Selberherr:
"A Dopant-Dependent Band Gap Narrowing Model: Application for Bipolar Device Simulation";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 105 - 108.
H.H. Pham, A. Nathan:
"Exponential Expansion for Rapid and Accurate Extraction of Interconnect Capacitance";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 65 - 68.
W. Pyka, R. Martins, S. Selberherr:
"Efficient Algorithms for Three-Dimensional Etching and Deposition Simulation";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 16 - 19.
X. Qi, S.Y. Shen, Z.-K. Hsiau, Z. Yu, R. Dutton:
"Layout-Based 3D Solid Modeling of IC Structures and Interconnects Including Electrical Parameter Extraction";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 61 - 64.
J. Racko, D. Donoval, V. Drobny:
"A New Compact Model for the Analysis of the Anomalies in I-V Characteristics of Schottky Diodes";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 296 - 299.
M. Radi, S. Selberherr:
"Three-Dimensional Adaptive Mesh Relaxation";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 193 - 196.
C.S. Rafferty, B. Biegel, Z. Yu, M.G. Aneona, J. Bude, R.W. Dutton:
"Multi-Dimensional Quantum Effect Simulation Using a Density-Gradient Model and Script-Level Programming Techniques";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 137 - 140.
S. Reggiani, M.C. Vecchi, A. Greiner, M. Rudan:
"Modeling Hole Surface- and Bulk-Mobility in the Frame of a Spherical-Harmonics Solution of the BTE";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 316 - 319.
T. Riihisaari, H. Ronkainen, H. Kattelus, H. Hakojärvi:
"Modeling of Temperature Dependence of Floating Pad Structure's RF Properties";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 30 - 33.
P.A. Rolland, N. Haese, F. Dhondt:
"Electromagnetic Simulation for the Modeling of Interconnects";
Talk: Conference, Leuven, Belgium (invited); 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 59 - 60.
F.M. Rotella, G. Ma, Z. Yu, R.W. Dutton:
"Design Optimization of RF Power MOSFETs Using Large Signal Analysis Device Simulation of Matching Networks";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 26 - 29.
M. Rottinger, N. Seifert, S. Selberherr:
"Simulation of AVC Measurements";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 284 - 287.
R. Sabelka, R. Martins, S. Selberherr:
"Accurate Layout-Based Interconnect Analysis";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 336 - 339.
H. Sakamoto, S. Kumashiro, H. Matsumoto:
"A Systematic and Physically Based Method of Extracting a Unified Parameter Set for a Point-Defect Diffusion Model";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 364 - 367.
B. Schmithiisen, K. Giirtner, W. Fichtner:
"Grid Adaptation for Device Simulation According to the Dissipation Rate";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 197 - 200.
W. Schoenmaker, V. Petrescu:
"The Modeling of Electromigration: A New Challenge for TCAD?";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 328 - 331.
A. Scholze, A. Schenk, W. Fichtner:
"TCAD Oriented Simulation of Single-Electron Transistors at Device Level";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 203 - 206.
F. Schuler, P. Klein, O. Kowarik:
"Influence of the Poly Gate Depletion Effect on Programming EEPROM Cells";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 372 - 375.
P. Schwarz:
"Microsystems CAD: From FEM to System Simulation";
Talk: Conference, Leuven, Belgium (invited); 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 141 - 148.
A.V. Schwerin, A. Spitzer:
"Industrial Demands on Process and Device Simulation";
Talk: Conference, Leuven, Belgium (invited); 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 348 - 355.
A.F. Shulekin, M.I. Vexler, H. Zimmermann:
"The Role of Quantization Effects in Inversion Hole Layers of Tunnel MOS Structures on n-Si Substrates";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 133 - 136.
D. Skarlatos, C. Tsamis, M. Omri, A. Claverie, D. Tsoukalas:
"Point Defect Parameter Extraction through their Reaction with Dislocation Loops";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 356 - 359.
D. Stiebel, P. Pichler:
"Recombination of Point Defects via Extended Defects and its Influence on Dopant Diffusion";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 360 - 363.
M. Stockinger, R. Strasser, R. Plasun, A. Wild, S. Selberherr:
"A Qualitative Study on Optimized MOSFET Doping Profiles";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 77 - 80.
R. Strasser, S. Selberherr:
"Parallel and Distributed TCAD Simulations Using Dynamic Load Balance";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 89 - 92.
K. Suzuki, N. Strecker, W. Fichtner:
"Damage Accumulation by Arsenic Ion Implantation and its Impact on Transient Enhanced Diffusion of As and B";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 51 - 54.
T. Takahashi, M. Miura-Mattausch, Y. Omura:
"Origin of Drain-Current Oscillation in Ultra-Thin SOI n-MOSFET";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 211 - 214.
R. Thalhammer, F. Hille, G. Wachutka:
"Numerical Simulation of Infrared Laser Probing Techniques";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 276 - 279.
K. Tietzel, A. Bourenkov, J. Lorenz:
"Coupled 3D Process and Device Simulation of Advanced MOSFETs";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 255 - 258.
Y. Tosaka, H. Kanata, T. Itakura, K. Suzuki, S. Satoh:
"Simplified Simulator for Neutron-Induced Soft Errors Based on Modified BGR Model";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 117 - 120.
M. Trovato, P. Falsaperla:
"Hydrodynamic Model for Hot Carriers in Silicon Based on the Maximum Entropy Formalism";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 320 - 323.
H. Van Meer, D. Schreurs, K. Van der Zanden, W. De Raedt, E. Simoen, L. Kaufmann:
"Bias-Dependent Low-Frequency Noise Model for Low Phase Noise InP HEMT Based MMIC Oscillator Design";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 157 - 160.
E. Vandenbossche, G. Kopalidis, M. Tack, W. Schoenmaker:
"Statistical Modeling Based on Extensive TCAD Simulations: Proposed Methodology for Extraction of Fast/Slow Models and Statistical Models";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 85 - 88.
J. Victory, C.C. McAndrew, R. Thoma, R. Joardar, M. Kniffin, S. Merchant, D. Moncoqut:
"A Physically-Based Compact Model for LDMOS Transistors";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 271 - 274.
D. Vietzke, D. Reznik, M. Stoisiek, W. Gerlach:
"Improved Modeling of Bandgap-Narrowing Effects in Silicon p⁺/n⁺-Junctions";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 109 - 112.
P. Voigt, G. Schrag, G. Wachutka:
"Methods for Model Generation and Parameter Extraction for MEMS";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 149 - 152.
H.-H. Vuong, C.S. Rafferty, J. Ning, J.R. McMacken, J. McKinley, F.A. Stevie:
"Modeling the Trapping and De-Trapping of Phosphorus at the Si to SiO₂ Interface";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 380 - 383.
N.M. Wilson, Z.-K. Hsiau, R.W. Dutton, P.M. Pinsky:
"A Heterogeneous Environment for Computational Prototyping and Simulation Based Design of MEMS Devices";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 153 - 156.
B. Witzigmann, F. Oyafuso, K. Hess:
"Quasi 3D Simulation of Quantum Well DFB Lasers";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 280 - 283.
M. Yamaji, T. Itakura:
"New Hot Carrier Degradation Mechanism for MOSFET Devices Using Two-Type Interface-State Model";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 231 - 234.
P.D. Yoder, W. Fichtner:
"Effects of Scaling and Lattice Heating on n-MOSFET Performance via Electrothermal Monte Carlo Simulation";
Talk: Conference, Leuven, Belgium; 1998-09-02 - 1998-09-04; in: "Proc. of SISPAD", (1998), 165 - 168.