SISPAD 1997 Proceedings

• A. Abramo:
  "A General Purpose 2D Schrödinger Solver with Open/Closed Boundary Conditions for Quantum Device Analysis";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 105 - 108.
  
  
• D. Adalsteinsson, J.A. Sethian:
  "Three-Dimensional Profile Evolution under Low Sticking Coefficient";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 61 - 64.
  
  
• M. Akazawa, T. Yamada, Y. Amemiya:
  "Computer-Aided Design of Single-Electron Boltzmann Machine Neuron Circuit";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 201 - 204.
  
  
• L. Albasha, C.M. Snowden, R.D. Pollard:
  "Breakdown Characterization of HEMTs and MESFETs Based on a New Thermally Driven Gate Model";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 277 - 280.
  
  
• N. Aluru, J. White:
  "A Multi-Level Newton Method for Static and Fundamental Frequency Analysis of Electro-Mechanical Systems";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 125 - 128.
  
  
• M.G. Ancona, Z. Yu, W.C. Lee, R.W. Dutton, P.V. Voorde:
  "Density-Gradient Simulations of Quantum Effects in UItra-Thin Oxide MOS Structures";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 97 - 100.
  
  
• Y. Ansel, B. Romanowics, M. Laudon, P. Renaud:
  "Capacitive Detection Method Evaluation for Silicon Accelerometer by Physical Parameter Extraction from Finite Elements Simulations";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 129 - 132.
  
  
• E. Bär, J. Lorenz, H. Ryssel:
  "Three-Dimensional Simulation of Conventional and Collimated Sputter Deposition of Ti Layers into High Aspect Ratio Contact Holes";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 297 - 300.
  
  
• L.C. Bassman, N.R. Ibrahim, P.M. Pinsky, K.C. Saraswat, M.D. Deal:
  "Mesoscale Modeling of Diffusion in Polycrystalline Structures";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 149 - 152.
  
  
• S. Biesemans, K. De Meyer:
  "Assessment of a MOSFET Circuit Model as a Tool for Device Design down to 0.05μm";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 305 - 308.
  
  
• S. Biesemans, K. De Meyer:
  "On the Effective Mobility for Electrons in MOS Inversion Channels";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 165 - 168.
  
  
• E.T. Carlen, C.H. Mastrangelo:
  "An Experimental Methodology for the Estimation of Spatially Correlated Parametric Yield in Thin Film Devices";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 45 - 48.
  
  
• C.-H. Chang, C.-K. Lin, W. Liang, N. Goldsman, I.D. Mayergoyz, P. Oldiges, J. Melngailis:
  "The Spherical Harmonic Method: Corroboration with Monte Carlo and Experiment";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 225 - 228.
  
  
• S. Chaudhry, Y.F. Chyan, M.S. Carroll, A.S. Chen, W.J. Nagy, J.L. Lee, K.-H. Lee, P.A. Layman, F.A. Stevie, C.S. Rafferty, H.-H. Vuong:
  "A Computationally Efficient Technique to Extract Diffused Profiles and Three-Dimensional Collector Resistances of High Energy Implanted Bipolar Devices";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 257 - 260.
  
  
• K . Chen, C. Hu, P. Fang, M. Gupta, M.R. Lin, D. Wollesen:
  "Accurate Models for CMOS Scaling and Gate Delay in Deep Submicron Regime";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 261 - 264.
  
  
• V.M.C. Chen, Y.-T. Lin, Y.-K. Peng:
  "Integrated Statistical Process and Device Simulation System with Automatic Calibration Using Single-Step Feedback and Backpropagation Neural Network";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 313 - 314.
  
  
• Y. Cheng, K. Chen, K. Imai, C. Hu:
  "ICM - An Analytical Inversion Charge Model for Accurate Modeling of Thin Gate Oxide MOSFETs";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 109 - 112.
  
  
• Y. Cheng, T. Sugii, K . Chen, Z. Liu, M.-C. Jeng, C. Hu:
  "Modeling Reverse Short Channel and Narrow Width Effects in Small Size MOSFETs for Circuit Simulation";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 249 - 252.
  
  
• C.-H. Choi, S.-H. Lee, I.K. Kim, Y.-K. Park, J.-T. Kong:
  "Analysis of Channel-Width Effects in 0.3μm Ultra-Thin SOI n-MOSFETs";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 37 - 40.
  
  
• K. Eikyu, K. Sakakibara, K. Ishikawa, T. Nishimura:
  "Two-Dimensional Simulation of FN Current Suppression Including Phonon Assisted Tunneling Model in Silicon Dioxide";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 347 - 350.
  
  
• T. Enda, N. Shigyo:
  "Grid Size Independent Model of Inversion Layer Carrier Mobility";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 319 - 322.
  
  
• C. Fiegna, A. Abramo:
  "Solution of 1D Schrödinger and Poisson Equations in Single and Double-Gate SOI MOS";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 93 - 96.
  
  
• R. Freund:
  "Recent Advances in Krylov-Subspace Solvers for Linear Systems and Applications in Device Simulation";
  Talk: Conference, Cambridge, MA, USA (invited); 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 9 - 16.
  
  
• R.W. Freund, P. Feldmann:
  "The SyMPVL Algorithm and its Applications to Interconnect Simulation";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 113 - 116.
  
  
• K. Fukuda, K. Nishi:
  "Application of TCAD to Designing Advanced DRAM and Logic Devices";
  Talk: Conference, Cambridge, MA, USA (invited); 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 17 - 20.
  
  
• A. Gencer, S. Chakravarthi, S.T. Dunham:
  "Physical Modeling of Transient Enhanced Diffusion and Dopant Deactivation via Extended Defect Evolution";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 77 - 80.
  
  
• M. Gluck, D. Behammer, M. Schafer, H. Walk, U. Konig:
  "2D Process and Device Simulation of Lateral and Vertical Si/SiGe High-Speed Devices";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 197 - 200.
  
  
• P. Graf, S. Keith, B. Meinerzhagen:
  "Evaluation of Solenoidal and Statistically Enhanced Total Current Densities in Multi-Particle Monte Carlo Device Simulators";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 221 - 224.
  
  
• M. Hane, T. Ikezawa, H. Matsumoto:
  "Simulation of Secondary Ion Mass Spectrometry (SIMS) for Steep Dopant Distribution Profiling";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 133 - 136.
  
  
• G. Hobler, C.S. Rafferty, S. Sendaker:
  "A Model of {311} Defect Evolution Based on Nucleation Theory";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 73 - 76.
  
  
• S.-F. Huang, P.B. Griffin, J.D. Plummer, P. Rissmann:
  "Modeling Stress Effects on Thin Oxides Growth Kinetics";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 49 - 52.
  
  
• R.B. Iverson, Y.L. Le Coz:
  "A Methodology for Full-Chip Extraction of Interconnect Capacitance Using Monte Carlo-Based Field Solvers";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 117 - 120.
  
  
• S.K. Jones, D.J. Bazley, R. Beanland, G. Badenes, B. Scaife:
  "Simulation of Advanced LOCOS Capability for Sub-0.25μm CMOS Isolation";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 185 - 188.
  
  
• C. Jungemann, S. Yamaguchi, H. Goto:
  "Convergence Estimation for Stationary Ensemble Monte Carlo Simulations";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 209 - 212.
  
  
• R. Kakoschke, M. Miura-Mattausch, U. Feldmann, G. Schraud:
  "Concurrent Technology, Device, and Circuit Development for EEPROMs";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 193 - 196.
  
  
• E.C. Kan, Z.-K. Hsiau, V. Rao, R.W. Dutton:
  "Gridding Techniques for the Level Set Method in Semiconductor Process and Device Simulation";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 327 - 330.
  
  
• S. Kim, K. Yang, J. Baek, C. Kim:
  "Explanation of Anomalous Narrow Width Effect for n-MOSFET with LOCOS/NSL Isolation by Compressive Stress";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 189 - 192.
  
  
• Y.- H. Kim, T-K. Kim, H.-L. Lee, J.-T. Kong, S.H. Lee:
  "CMP Profile Simulation Using an Elastic Model Based on Nonlinear Contact Analysis";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 69 - 72.
  
  
• H. Kosina, G. Kaiblinger-Grujin, S. Selberherr:
  "A New Approach to Ionized-Impurity Scattering";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 205 - 208.
  
  
• M. Lades, G. Wachutka:
  "Extended Anisotropic Mobility Model Applied to 4H/6H-SiC Devices";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 169 - 172.
  
  
• G. Le Carval, P. Scheiblin, A. Poncet, P. Rivallin:
  "Methodology for Predictive Calibration of TCAD Simulators";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 177 - 180.
  
  
• J . Lee, T. Won, S. Yoon, Y. Kim, J. Kim, D. Lee:
  "Three-Dimensional Modeling of the TED due to Implantation Damage";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 301 - 304.
  
  
• X. Li, A. Strojwas, A. Swecker, L. Milor, Y.-T. Lin:
  "Rigorous Topography Simulation of Contamination to Defect Transformation";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 339 - 342.
  
  
• S.L. Lim, Z. Yu, R.W. Dutton:
  "A Computationally-Stable Quasi-Empirical Compact Model for the Simulation of MOS Breakdown in ESD-Protection Circuit Design";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 161 - 164.
  
  
• R. Logan, Y. Taur, E. Crabbe:
  "Asymmetry in Effective Channel Length of n- and p-MOSFETs";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 21 - 24.
  
  
• C. Machala, R. Wise, D. Mercer, A. Chatterjee:
  "The Role of Boron Segregation and Transient Enhanced Diffusion on Reverse Short Channel Effects";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 141 - 144.
  
  
• K. Matsuzawa, S. Takagi, M. Suda, Y. Oowaki, N. Shigyo:
  "Modeling of Saturation Velocity for Simulation of Deep Submicron n-MOSFETs";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 217 - 220.
  
  
• L. Milor, J. Orth, D. Steele, K. Phan, X. Li, A.J. Strojwas, Y.-T. Lin:
  "Photoresist Process Optimization for Defects Using a Rigorous Topography Simulator";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 57 - 60.
  
  
• V. Moroz, S. Motzny, K. Lilja:
  "A Boundary Conforming Mesh Generation Algorithm for Simulation of Devices with Complex Geometry";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 293 - 296.
  
  
• M. Navi, S. Dunham:
  "Interactions of Fluorine Redistribution and Nitrogen Incorporation with Boron Diffusion in Silicon Dioxide";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 335.
  
  
• Y. Ohno, Y. Takahashi:
  "Two-Dimensional Device Simulator for Cyclic Bias Application";
  Poster: Conference, C; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 315 - 318.
  
  
• P. Oldiges, H. Zhu, K. Nordlund:
  "Molecular Dynamics Simulations of LATID Implants into Silicon";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 245 - 248.
  
  
• A.L. Pardhanani, G. Carey:
  "Investigation of Time-Integration and Iterative Techniques for Non-Equilibrium Phosphorus Diffusion Modeling";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 289 - 292.
  
  
• H. Park, M. Bafleur, L. Borucki, C. Sudhama, T. Zirkle, A. Wild:
  "Systematic Calibration of Process Simulators for Predictive TCAD";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 273 - 276.
  
  
• J. Park, H.J. Lee, J.-T. Kong, S.H. Lee:
  "Modeling of Polymer Neck Generation and its Effects on the Etch Profile in Oxide Contact Hole Etching Using Ar, CHF₃, and CF₄ Gases";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 285 - 288.
  
  
• J.-K. Park, C.-H. Choi, Y.-K. Park, C.-S. Lee, J.-T. Kong, M. - H. Kim, K.H. Kim, T.S. Kim, S.H. Lee:
  "A Characterization Tool for Current Degradation Effects of Abnormally Structured MOS Transistors";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 41 - 44.
  
  
• A. Pierantoni, M.C. Vecchi, A. Gnudi:
  "Sub-Domain Solution of the Boltzmann Equation in MOS Devices by Means of Spherical Harmonics Expansion";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 229 - 233.
  
  
• M. Radi, E. Leitner, E. Hollensteiner, S. Selberherr:
  "AMIGOS: Analytical Model Interface and General Object-Oriented Solver";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 331 - 334.
  
  
• C. Rafferty:
  "Process in Predicting Transient Diffusion";
  Talk: Conference, Cambridge, MA, USA (invited); 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 1 - 4.
  
  
• V.S. Rao, T.J. Hughes, E. Kan, R.W. Dutton:
  "A New Numerical Formulation for Thermal Oxidation";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 237 - 240.
  
  
• F. Rotella, B. Troyanovsky, Z. Yu, R.W. Dutton:
  "Harmonic Balance Device Analysis of an LDMOS RF Power Amplifier with Parasitics and Matching Network";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 157 - 160.
  
  
• H. Rucker, B. Heinemann, W. Ropke, G. Fischer, G. Lippert, H.J. Osten:
  "Modeling the Effect of Carbon on Boron Diffusion";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 281 - 284.
  
  
• H.A. Rueda, S. Cea, M.E. Law:
  "Mechanical Stress Modeling for Silicon Fabrication Processes";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 53 - 56.
  
  
• H. Sakamoto, S. Kumashiro:
  "A New Diffusion Algorithm during Oxidation which can Handle both Phosphorous Pile-Up and Boron Segregation at Si-SiO₂ Interface";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 81 - 84.
  
  
• H. Sakamoto, S. Kumashiro, M. Hiroi, M. Hane, H. Matsumoto:
  "Simulation of Reverse Short Channel Effects with a Consistent Point-Defect Diffusion Model";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 137 - 140.
  
  
• E. Sangiorgi:
  "Historical Perspective and Recent Developments of Hot Carrier Generation Modeling for Device Analysis";
  Talk: Conference, Cambridge, MA, USA (invited); 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 5 - 8.
  
  
• N. Sano, K. Natori:
  "Substrate Current Fluctuation under Low Drain Voltages in Si MOSFETs";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 213 - 216.
  
  
• G. Schrom, V. De, S. Selberherr:
  "VLSI Performance Metric Based on Minimum TCAD Simulations";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 25 - 28.
  
  
• T. Simlinger, S. Selberherr:
  "A Method for Unified Treatment of Interface Conditions Suitable for Device Simulation";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 173 - 176.
  
  
• P.A. Stolk, F.P. Widdershoven, D.B. Klaassen:
  "Device Modeling of Statistical Dopant Fluctuations in MOS Transistors";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 153 - 156.
  
  
• J.-G. Su, S.-C. Wong, C.-T. Huang, C.-C. Cheng, C.-C. Wang, S. Huang-Lu, B.-Y. Tsui:
  "Tilt Angle Effect on Optimizing HALO PMOS Performance";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 33 - 36.
  
  
• A.L. Swecker, A.J. Strojwas, X. Li, A. Levy:
  "Simulation of Defect Detection Schemes for Wafer Inspection in VLSI Manufacturing";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 145 - 148.
  
  
• T.-W. Tang, J. Nam:
  "A Simplified Hydrodynamic Impact Ionization Model Based on the Average Energy of Hot Electron Subpopulation";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 269 - 272.
  
  
• T. Tatsumi, K. Ohtani, S. Takahashi, S. Shimizu, M. Mukai, Y. Komatsu:
  "MOSQue: A Novel TCAD Database System with Efficient Handling Capability on Measured and Simulated Data";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 265 - 268.
  
  
• S. Tian, G. Wang, M. Morris, S. Morris, B. Obradovic, A. Tasch, H. Kennel, P. Packan, C. Magee, J. Sheng, R. Lowther, J. Linn, C. Snell:
  "A Computationally Efficient Ion Implantation Damage Model and its Application to Multiple Implant Simulations";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 309 - 312.
  
  
• Y. Tosaka, S. Satoh, T. Itakura:
  "Neutron-Induced Soft Error Simulator and its Accurate Predictions";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 253 - 256.
  
  
• C. Troger, H. Kosina, S. Selberherr:
  "Modeling Non-Parabolicity Effects in Silicon Inversion Layers";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 323 - 326.
  
  
• T.-L. Tung:
  "A Method for Die-Scale Simulation of CMP Planarization";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 65 - 68.
  
  
• M. Uematsu:
  "Simulation of Transient Enhanced Diffusion of Boron Induced by Silicon Self-Implantation";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 89 - 92.
  
  
• K. Vasanth, M. Nandakumar, M. Rodder, S. Sridhar, P.K. Mozumder, I.- C. Chen:
  "A Pocket Implant Model for Sub-0.18 Micron CMOS Process Flows";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 181 - 184.
  
  
• F. Venturi, A. Ghetti:
  "Assessment of Accuracy Limitations of Full-Band Monte Carlo Device Simulation";
  Poster: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 343 - 346.
  
  
• H.-H. Vuong, C.S. Rafferty, J.R. McMacken, J. Ning, S. Chaudhry:
  "Modeling the Effect of Phosphorous Dose Loss at the SiO₂ Interface on CMOS Device Characteristics";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 85 - 88.
  
  
• J. Wang, J. White:
  "Fast Algorithms for Computing Electrostatic Geometric Sensitivities";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 121 - 124.
  
  
• Y.S. Wang, C.H. Mastrangelo:
  "A Multiple Zone Inverse Diffusion Solver for Silicon Processing";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 241 - 244.
  
  
• A. Wettstein, A. Schenk, A. Scholze, W. Fichtner:
  "The Influence of Localized States on Gate Tunnel Currents Modeling and Simulation";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 101 - 104.
  
  
• D. Yim, H. Kim, D. Song, J. Baek:
  "Layout Optimization of ESD Protection TFO-NMOS by Two-Dimensional Device Simulation";
  Talk: Conference, Cambridge, MA, USA; 1997-09-08 - 1997-09-10; in: "Proc. of SISPAD", (1997), 0-7803-3775-1; 29 - 32.