SISPAD 1996 Proceedings

• D. Adalsteinsson, J.A. Sethian:
  "Computational Performance of Level Set Methods for Etching, Deposition, and Lithography Development";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 79 - 80.
  
  
• M. Akazawa, T. Aoki, S. Tazawa, Y. Sato:
  "Phosphorus Pile-Up Model for SiO₂-Si Interface of p-Channel MOSFETs";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 29 - 30.
  
  
• M. Bächtold, J.G. Korvink, H. Baltes:
  "Automatic Adaptive Meshing for Efficient Electrostatic Boundary Element Simulations";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 127 - 128.
  
  
• H.S. Bennett:
  "Majority and Minority Mobilities in Heavily Doped Gallium Aluminum Arsenide for Device Simulations";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 3 - 4.
  
  
• S. Biesemans, K. De Meyer:
  "Fundamental Relation between Local and Effective Transverse Field-Dependent Mobility for Electrons in Inversion Channels";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 103 - 104.
  
  
• W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr:
  "Monte Carlo Simulation of Silicon Amorphization during Ion Implantation";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 17 - 18.
  
  
• I. Bork, H. Matsumoto:
  "On the Determination of Boron Diffusivities and Boron Interstitial Pair Binding Energies in Silicon";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 91 - 92.
  
  
• F.M. Bufler, P. Graf, B. Meinerzhagen, H. Kibbel:
  "A New Comprehensive and Experimentally Verified Electron Transport Model for Strained SiGe";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 57 - 58.
  
  
• S. Cea, M.E. Law:
  "Three-Dimensional Nonlinear Viscoelastic Oxidation Modeling";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 97 - 98.
  
  
• T. Chen, D.W. Yergeau, R.W. Dutton:
  "Efficient 3D Mesh Adaptation in Diffusion Simulation";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 171 - 172.
  
  
• P. Ciampolini, L. Roselli, S. Catena:
  "Application of LE-FDTD Method to HF Circuit Analysis";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 53 - 54.
  
  
• O. Dokumaci, M.E. Law:
  "An Interpolation Technique for the Numerical Solution of the Rate Equations in Extended Defect Simulation";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 37 - 38.
  
  
• D.W. Dyke, M.Y. Chang, C.C. Leung, P.A. Childs:
  "Hot Carrier Energy Distributions in Short Channel MOSFETs and the Persistence of Substrate at Low Drain Voltages";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 101 - 102.
  
  
• M.V. Fischetti, N. Sano, S.E. Laux, K. Natori:
  "Full-Band Monte Carlo Simulation of High-Energy Transport and Impact Ionization of Electrons and Holes in Ge, Si, and GaAs";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 43 - 44.
  
  
• P. Fleischmann, R. Sabelka, A. Stach, R. Strasser, S. Selberherr:
  "Grid Generation for Three-Dimensional Process and Device Simulation";
  Talk: Conference, Tokyo, Japan (invited); 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 161 - 166.
  
  
• P. Fleischmann, S. Selberherr:
  "A New Approach to Fully Unstructured Three-Dimensional Delaunay Mesh Generation with Improved Element Quality";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 129 - 130.
  
  
• P. Francis, Y. Ohno, M. Nogome, Y. Takahashi:
  "Numerical Simulations of Surface States Effects on GaAs Power MESFETs";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 117 - 118.
  
  
• K. Gärtner, W. Fichtner:
  "Improved Separators by Multigrid Methods";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 175 - 176.
  
  
• N.A. Golias, R.W. Dutton:
  "Advanced Geometric Techniques in 3D Process Simulation";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 169 - 170.
  
  
• M. Hahad, P. Hopper:
  "High Performance Semiconductor Device Simulation on Shared Memory Parallel Computers";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 137 - 138.
  
  
• M. Hane, C.S. Rafferty, T. Ikezawa, H. Matsumoto:
  "Boron Diffusion Model Refinement and its Effect on the Calculation of Reverse Short Channel Effect";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 15 - 16.
  
  
• A. Hoefler, T. Feudel, N. Strecker, W. Fichtner, K. Suzuki, N. Sasaki, Y. Kataoka, F. Grätsch:
  "Modeling and Simulation of Spatial Dependent Transient Diffusion after BF₂ Implantation";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 13 - 14.
  
  
• Z.-K. Hsiau, E.C. Kan, D.S. Bang, J.P. McVittie, R.W. Dutton:
  "Modeling and Characterization of Three-Dimensional Effects in Physical Etching and Deposition Simulation";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 75 - 76.
  
  
• T. Hyodo, S. Taji, N. Yoshida, H. Watanabe, I. Shiota:
  "Analysis of Boron Pile-Up at the Si-SiO₂ Interface Using 2D Process and Device Simulation";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 87 - 88.
  
  
• R. Ikeno, K. Asada:
  "Robust Simulation for the Hysteresis Phenomena of SOI MOSFETs by Quasi-Transient Method";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 105 - 106.
  
  
• G. Jin, E.C. Kan, R.W. Dutton:
  "A New Practical Method to Include Recombination-Generation Process in Self-Consistent Monte Carlo Device Simulation";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 61 - 62.
  
  
• C.M. Johnson, J.T. Trattles:
  "A Robust Finite Element Vector Formulation of the Semiconductor Drift-Diffusion Equations Incorporating Anisotropic Transport Properties";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 133 - 134.
  
  
• W. Joppich, S. Mijalkovic:
  "Simulation of Thermal Oxidation and Diffusion Processes by Parallel PDE Solver LiSS";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 89 - 90.
  
  
• C. Jungemann, S. Decker, R. Thoma, W.L. Engl, H. Goto:
  "Phase Space Multiple Refresh: A Versatile Statistical Enhancement Method for Monte Carlo Device Simulation";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 65 - 66.
  
  
• C. Jungemann, S. Yamaguchi, H. Goto:
  "Accurate Prediction of Hot Carrier Effects for a Deep Sub-μm CMOS Technology Based on Inverse Modeling and Full-Band Monte Carlo Device Simulation";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 59 - 60.
  
  
• K. Kai, H. Hayashi, S. Kuroda, K. Fukuda, K. Nishi:
  "Channel Dopant Profile and L_eff Extraction of Deep Submicron MOSFETs by Inverse Modeling";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 35 - 36.
  
  
• S. Kamohara, A. Shimizu, S. Yamamoto, K. Kubota:
  "TED Model Including the Dissolution of Extended Defects";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 85 - 86.
  
  
• M. Kawakami, M. Sugaya, S. Kamohara:
  "A New High-Speed Non-Equilibrium Point Defect Model for Annealing Simulation";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 93 - 94.
  
  
• N. Khalil, J. Faricelli:
  "Inverse Modeling Profile Determination: Implementation Issues and Recent Results";
  Talk: Conference, Tokyo, Japan (invited); 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 19 - 22.
  
  
• H. Kirchauer, S. Selberherr:
  "Three-Dimensional Photoresist Exposure and Development Simulation";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 99 - 100.
  
  
• T.O. Korner, P.D. Yoder, L.H. Bomholt, W. Fichtner:
  "Optical-Electronic Simulation of a GaAs Metal-Semiconductor-Metal (MSM) Photodetectors";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 47 - 48.
  
  
• M. Lades, A. Schenk, U. Krumbein, G. Wachutka, W. Fichtner:
  "Temperature-Dependent Study of 6H-SiC pin-Diode Reverse Characteristics";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 55 - 56.
  
  
• F. Lau, P. Küpper, K.H. Gebhardt:
  "Two-Dimensional Calibration of Dopant Transport Models for Submicron CMOS Transistors";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 111 - 112.
  
  
• J.-H. Lee, M.-S. Son, C.S. Yun, K.H. Kim, H.J. Hwang:
  "Elasto-Viscoplastic Modeling for Three-Dimensional Oxidation Process Simulation";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 83 - 84.
  
  
• S.-H. Lee, K.-H. Kim, J.-K. Park, C.-H. Choi, J.-T. Kong, W.-W. Lee, W.-S. Lee, J.-H. Yoo:
  "A Realistic Methodology for the Worst Case Analysis of VLSI Circuit Performances";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 155 - 156.
  
  
• D. Liebig, A. Abou-Elnour, K. Schünemann:
  "An Implicit Coupling Scheme for the Use of Long Time Steps in Stable Self-Consistent Particle Simulation of Semiconductor Devices with High Doping Levels";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 45 - 46.
  
  
• W.-R. Liou, M.-L. Yeh:
  "Fully Self-Consistent Calculation the Large-Signal Response of a Double-Barrier Heterostructure Device";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 123 - 124.
  
  
• S. List, H. Ryssel:
  "Atomistic Analysis of the Vacancy Diffusion Mechanism";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 27 - 28.
  
  
• J. Lorenz, K. Tietzel, A. Bourenkov, H. Ryssel:
  "Three-Dimensional Simulation of Ion Implantation";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 23 - 24.
  
  
• P. Losleben, D.S. Boning:
  "A New Semiconductor Research Paradigm Using Internet Collaboration";
  Talk: Conference, Tokyo, Japan (invited); 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 9 - 12.
  
  
• K.D. Lucas, X. Li, M. Noell, C.-M. Yuan, A.J. Strojwas:
  "Accurate Chip Scale Topography Modeling in O(n) Run Time";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 159 - 160.
  
  
• J. Mar:
  "The Application of TCAD in Industry";
  Talk: Conference, Tokyo, Japan (invited); 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 139 - 146.
  
  
• H. Miura, K. Ohshika, H. Masuda:
  "Effect of Passivation Film Stress on Shift in Threshold Voltage of GaAs FETs";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 49 - 50.
  
  
• K. Nakao, S. Segawa, T. Shimazu:
  "Control of Crystalline Defects on Wafers by Using Simulation in Heat Treating";
  Talk: Conference, Tokyo, Japan (invited); 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 69 - 74.
  
  
• M. Nogome, K. Kunihiro, Y. Ohno:
  "Numerical Simulation of Drain Lag in HJFETs with a p-Buffer Layer";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 119 - 120.
  
  
• K. Okada, K. Horio:
  "Energy Transport Modeling of Graded AlGaAs/GaAs HBTs: Importance of Giving Adequate Transport Parameters";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 51 - 52.
  
  
• P. Oldiges:
  "Soft Error Rate Modeling and Analysis of SOI/TFT SRAMs";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 107 - 108.
  
  
• J.-K. Park, T.-S. Park, S.-H. Lee, C.-H. Choi, K.-H. Kim:
  "An Integrated TCAD System for VLSI Reliability Simulation";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 151 - 152.
  
  
• C. Pichler, R. Plasun, R. Strasser, S. Selberherr:
  "Simulation Environment for Semiconductor Technology Analysis";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 147 - 148.
  
  
• E. Robilliart, E. Dubois:
  "Accuracy and Convergence Properties of a One-Dimensional Numerical Non-Quasi-Static MOSFETs Model for Circuit Simulation";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 179 - 180.
  
  
• H. Sato, K. Aoyama, K. Tsuneno, H. Masuda:
  "A Novel Transient Enhanced Diffusion Model of Phosphorus during Shallow Junction Formation";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 95 - 96.
  
  
• A. Schenk:
  "Modeling Tunneling through Ultrathin Gate Oxides";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 7 - 8.
  
  
• W. Schoenmaker, R. Cartuyvels:
  "Theory and Implementation of a New Interpolation Method Based on Random Sampling";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 157 - 158.
  
  
• G. Schrom, A. Stach, S. Selberherr:
  "A Consistent Dynamic MOSFET Model for Low-Voltage Applications";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 177 - 178.
  
  
• S. Senkader, G. Hobler, C. Schmeiser:
  "Modeling and Simulation of Oxygen Precipitation in Si: Precipitate-Point Defect Interactions and Influence of Hydrogen";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 31 - 32.
  
  
• T. Shinzawa, H. Kato:
  "Fast Step Coverage Simulation for 3D Contact Hole with Analytical Integral";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 81 - 82.
  
  
• K.W. Su, J.B. Kuo:
  "Analytical Current Conduction Model for Accumulation-Mode SOI PMOS Devices";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 113 - 114.
  
  
• T. Sugano:
  "Nanoelectronics - A New Field for SISPAD";
  Talk: Conference, Tokyo, Japan (invited); 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 1 - 2.
  
  
• T. Syo, Y. Akiyama, S. Kumashiro, I. Yokota, S. Asada:
  "A Triangular Mesh with the Interface Protection Layer Suitable for the Diffusion Simulation";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 173 - 174.
  
  
• S. Takagi, J.L. Hoyt, J.J. Welser, J.F. Gibbons:
  "Importance of Inter-Valley Phonon Scattering on Mobility Enhancement in Strained Si MOSFETs";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 5 - 6.
  
  
• K. Tanaka, A. Notsu, H. Matsumoto:
  "A New Approach to Mesh Generation for Complex 3D Semiconductor Device Structures";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 167 - 168.
  
  
• M. Tanizawa, S. Kikuta, N. Nakagawa, K. Ishikawa, N. Kotani, H. Miyoshi:
  "An Amorphous-Silicon Thin Film Transistor Model Including Variable Resistance Effect";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 181 - 182.
  
  
• T. Tatsumi, K. Ansai, K. Hayakawa, M. Mukai:
  "BARAS: Novel and Highly Efficient Simulation System for Process Control Sweeping and Statistical Variation";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 149 - 150.
  
  
• A. Tixier, V. Senez, B. Baccus, A. Marmiroli:
  "Implementation of Nitride Oxidation in the 2D Process Simulator IMPACT-4";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 33 - 34.
  
  
• K. Tsuneno, H. Sato, H. Masuda:
  "TCAD Diagnosis of I/O-Pin Latch-Up in Scaled DRAM";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 153 - 154.
  
  
• M. Uematsu:
  "Simulation of Boron Diffusion in Si Based on the Kick-Out Mechanism";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 25 - 26.
  
  
• P. Vales, J.-M. Dorkel:
  "Electrothermal Simulation Methodology for Power Devices and Integrated Circuits";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 108 - 110.
  
  
• A. Vashchenko, Y.B. Martynov, V.F. Sinkevitch:
  "Simulation of Isothermal Current Filament States in GaAs Structures";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 121 - 122.
  
  
• E.X. Wang, M.D. Giles, S. Yu, F.A. Leon, A. Hiroki, S. Odanaka:
  "Recursive M-Tree Method for 3D Adaptive Tetrahedral Mesh Refinement and its Application to Brillouin Zone Discretization";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 67 - 68.
  
  
• K. Wang, H. Park, Z. Yu, E. Kan, R.W. Dutton:
  "3D Solid Modeling of IC Structures Using Simulated Surface Topography";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 131 - 132.
  
  
• C. Wasshuber, H. Kosina:
  "A Single Electron Device and Circuit Simulator with a New Algorithm to Incorporate Co-Tunneling";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 135 - 136.
  
  
• H. Yamada, T. Ohta, H. Kaneko, Y. Yamada:
  "A Practical Sputter Equipment Simulation System for Aluminum Including Surface Diffusion Model";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 77 - 78.
  
  
• T. Yamada, K. Horio:
  "Two-Dimensional Simulation of Surface-State Effects on Slow Current Transients in GaAs MESFETs";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 125 - 126.
  
  
• M. Yamaji, K. Taniguchi, C. Hamaguchi:
  "Multi-Band Monte Carlo Method Using Anisotropic-Analytical Multi-Band Model";
  Poster: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 61 - 62.
  
  
• C.M. Yih, S.S. Chung, C.C. Hsu:
  "A Numerical Model for Simulating MOSFET Gate Current Degradation by Considering the Interface State Generation";
  Talk: Conference, Tokyo, Japan; 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 115 - 116.
  
  
• G. Zandler, M. Saraniti, A. Rein, P. Vogl:
  "Cellular Automata for Device Simulation - Concepts and Applications";
  Talk: Conference, Tokyo, Japan (invited); 1996-09-02 - 1996-09-04; in: "Proc. of SISPAD", (1996), 0-7803-2745-4; 39 - 42.