SISDEP 1995 Proceedings

• A. Abou-Elnour, K. Schünemann:
  "Determination of Electronic States in Low-Dimensional Heterostructure and Quantum Wire Devices";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 178 - 181.
  
  
• A. Abramo, J. Bude, F. Venturi, M.R. Pinto, E. Sangiorgi:
  "Performance Optimization in Si/SiGe Heterostructure FETs";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 106 - 109.
  
  
• N. Aluru, K.H. Law, R.W. Dutton:
  "Advances in Numerical Methods for Convective Hydrodynamic Model of Semiconductor Devices";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 86 - 89.
  
  
• K. Aoyama:
  "A Method for Extracting the Threshold Voltage of MOSFETs Based on Current";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 118 - 121.
  
  
• V. Axelrad:
  "Fast and Accurate Aerial Imaging Simulation for Layout Printability Optimization";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 18 - 25.
  
  
• S. Babiker, A. Asenov, J.R. Barker, S.P. Beaumont:
  "Finite Element Monte Carlo Simulation of Recess Gate FETs";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 226 - 229.
  
  
• H. Baltes, J. Korvink, O. Paul:
  "Numerical Modeling and Materials Characterization for Integrated Micro Electro-Mechanical Systems";
  Talk: Conference, Erlangen, Germany (invited); 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 1 - 9.
  
  
• D.S. Bang, Z. Krivokapic, M. Hohmeyer, J.P. McVittie, K.C. Saraswat:
  "Three-Dimensional Simulation for Sputter Deposition Equipment and Processes";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 166 - 169.
  
  
• T. Bergunde, M. Dauelsberg, Yu. Egorov, L. Kadinski, Yu.N. Makarov, M. Schäfer, G. Strauch, M. Weyers:
  "Algorithms and Models for Simulation of MOCVD of 111V Layers in the Planetary Reactor";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 328 - 331.
  
  
• S. Biesemans, K. De Meyer:
  "On the Integral Representations of Electrical Characteristics in Si Devices";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 110 - 113.
  
  
• W. Bohmayr, A. Burenkov, J. Lorenz, H. Ryssel, S. Selberherr:
  "Statistical Accuracy and CPU Time Characteristic of Three Trajectory Split Methods for Monte Carlo Simulation of Ion Implantation";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 492 - 495.
  
  
• S. Bozek, B. Baccus, V. Senez, Z. Wang:
  "Mesh Generation for 3D Process Simulation and the Moving Boundary Problem";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 460 - 463.
  
  
• C. Brisset, X. Musalem, P. Dollfus, P. Hesto:
  "Modeling of Magnetic-Field Sensitive GaAs Devices";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 26 - 29.
  
  
• A. R. Brown, A. Asenov, S. Roy, J.R. Barker:
  "Parallel 3D Finite Element Power Semiconductor Device Simulator Based on Topologically Rectangular Grid";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 336 - 339.
  
  
• A. Burenkov, W. Bohmayr, J. Lorenz, H. Ryssel, S. Selberherr:
  "Analytical Model for Phosphorus Large Angle Tilted Implantation";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 488 - 491.
  
  
• Y. Butel, J. Hedoire, J.C. De Jaeger, M. Lefebvre, G. Salmer:
  "HFET Breakdown Study by 2D and Quasi 2D Simulations: Topology Influence";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 360 - 363.
  
  
• E.M. Buturla, J. Byers, A. Husain, M. Kump, P. Lloyd, R. Manukonda, S. Runnels, D. Scharfetter:
  "The Role of SEMATECH in Enabling Global TCAD Collaboration";
  Talk: Conference, Erlangen, Germany (invited); 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 163 - 165.
  
  
• G.P. Carnevale, P. Colpani, A. Marmiroli, A. Rebora, A. Tixier:
  "Optimization of a Recessed LOCOS Using a Tuned 2D Process Simulator";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 286 - 289.
  
  
• S. Cea, M. Law:
  "Multidimensional Nonlinear Viscoelastic Oxidation Modeling";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 139 - 143.
  
  
• S. Cea, M. Law:
  "Viscoelastic Modeling of Titanium Silicidation";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 135 - 138.
  
  
• T. Chen, J. Johnson, R.W. Dutton:
  "A Vector Level Control Function for Generalized Octree Mesh Generation";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 270 - 273.
  
  
• M.-C. Cheng:
  "An Efficient Approach to Solving the Boltzmann Transport Equation in Ultra-Fast Transient Situations";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 202 - 205.
  
  
• L. Colalongo, M. Valdinoci, M. Rudan:
  "An Efficient Numerical Method to Solve the Time-Dependent Semiconductor Equations Including Trapped Charge";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 82 - 85.
  
  
• M. Curow:
  "Design and Optimization of Millimeter-Wave IMPATT Oscillators Using a Consistent Model for Active and Passive Circuit Parts";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 250 - 253.
  
  
• S.T. Dunham, C.D. Wu:
  "Lattice Monte Carlo Simulations of Vacancy-Mediated Diffusion and Implications for Continuum Models of Coupled Diffusion";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 476 - 479.
  
  
• F. Durst, A.O. Galjukov, Yu.N. Makarov, M. Schäfer, P.A. Voinovich, A.l. Zhmakin:
  "Efficient 3D Unstructured Grid Algorithms for Modeling of Chemical Vapor Deposition in Horizontal Reactors";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 258 - 261.
  
  
• S. Eicher, F. Bauer, W. Fichtner:
  "An Approach for Explaining Drift Phenomena in GTO Devices Using Numerical Device Simulation";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 332 - 335.
  
  
• D. Freund, A. Kostka:
  "A New Physical Compact Model of CLBTs for Circuit Simulation Including Two-Dimensional Calculations";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 344 - 347.
  
  
• M. Fujinaga, T. Kunikiyo, T. Uchida, K. Kamon, N. Kotani, T. Hirao:
  "Three-Dimensional Integrated Process Simulator: 3D-MIPS";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 143 - 146.
  
  
• K. Fukuda, K. Nishi:
  "An Advanced Cellular Automaton Method with Interpolated Flux Scheme and its Application to Modeling of Gate Currents in Si MOSFETs";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 90 - 93.
  
  
• H. Gajewski, K. Gärtner:
  "On the Discretization of van Roosbroeck's Equations with Magnetic Field";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 234 - 237.
  
  
• G. Garreton, L. Villablanca, N. Strecker, W. Fichtner:
  "Unified Grid Generation and Adaptation for Device Simulation";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 468 - 471.
  
  
• W. Gerlach, U. Wiese:
  "Preventing Critical Conditions in IGBT Chopper Circuits by a Multistep Gate Drive Mode";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 262 - 265.
  
  
• Y.C. Gerstenmaier, E. Baudelot:
  "Investigation of GTO Turn-On in an Inverter Circuit at Low Temperatures Using 2D Electrothermal Simulation";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 364 - 367.
  
  
• A. Ghetti, X. Wang, F. Venturi, F.A. Leon:
  "Stability Issues in Self-Consistent Monte Carlo-Poisson Simulations";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 388 - 391.
  
  
• P. Hazdra, J. Vobecky:
  "Achievement of Quantitatively Accurate Simulation of Ion-Irradiated Bipolar Power Devices";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 186 - 189.
  
  
• G. Heiser, P.P. Altermatt, J. Litsios:
  "Combining 2D and 3D Device Simulation with Circuit Simulation for Optimizing High Efficiency Silicon Solar Cells";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 348 - 351.
  
  
• F. Herzel, B. Heinemann:
  "A Novel Approach to HF-Noise Characterization of Heterojunction Bipolar Transistors";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 98 - 101.
  
  
• A. Hoefler, T. Feudel, A. Liegmann, N. Strecker, W. Fichtner, Y. Kataoka, K. Suzuki, N. Sasaki:
  "Precipitation Phenomena and Transient Diffusion/Activation during High Concentration Boron Annealing";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 448 - 451.
  
  
• K. Horio, K. Satoh, T. Yamada:
  "Two-Dimensional Simulation of Deep-Trap Effects in GaAs MESFETs with Different Types of Surface States";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 78 - 81.
  
  
• M. Jacob, P. Pichler, H. Ryssel, R. Falster:
  "Platinum Diffusion at Low Temperatures";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 472 - 475.
  
  
• C. Jungemann, S. Keith, B. Meinerzhagen, W.L. Engl:
  "On the Influence of Band Structure and Scattering Rates on Hot Electron Modeling";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 222 - 225.
  
  
• S. Kamohara, M. Kawakami:
  "A New Hydrodynamic Equation for Ion-Implantation Simulation";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 480 - 483.
  
  
• S. Kamohara, M. Sugaya, H. Matsuo:
  "A Very Fast Three-Dimensional Impurity Profile Simulation Incorporating an Accumulated Diffusion Length and its Application to the Design of Power MOSFETs";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 194 - 197.
  
  
• D.C. Kerr, I.D. Mayergoyz:
  "Recovery of Vectorial Fields and Currents in Multidimensional Simulation";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 198 - 201.
  
  
• A. Kersch, M. Schäfer:
  "Modeling the Wafer Temperature in a LPCVD Furnace";
  Talk: Conference, Erlangen, Federal Republic of Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 174 - 177.
  
  
• G. Khrenov, E. Kulkova:
  "Monte Carlo Simulation of InP/InGaAs HBT with a Buried Subcollector";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 246 - 249.
  
  
• A. Klös, A. Kostka:
  "A Fully 2D Analytical Model for the Geometry and Voltage Dependence of Threshold Voltage in Submicron MOSFETs";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 218 - 221.
  
  
• H. Kosina, M. Harrer, P. Vogl, S. Selberherr:
  "A Monte Carlo Transport Model Based on Spherical Harmonics Expansion of the Valence Bands";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 396 - 399.
  
  
• U. Krumbein, P.D. Yoder, A. Benvenuti, A. Schenk, W. Fichtner:
  "Full-Band Monte Carlo Transport Calculation in an Integrated Simulation Platform";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 400 - 403.
  
  
• M. Lades, J. Frank, J. Funk, G. Wachutka:
  "Analysis of Piezoresistive Effects in Silicon Structures Using Multidimensional Process and Device Simulation";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 22 - 25.
  
  
• F. Lau, W.H. Krautschneider, F. Hofmann, H. Gossner, H. Schaefer:
  "Process and Device Simulation of Very High Speed Vertical MOS Transistors";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 436 - 439.
  
  
• S.E. Laux:
  "On Particle-Mesh Coupling in Monte Carlo Semiconductor Device Simulation";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 404 - 407.
  
  
• E. Leitner, S. Selberherr:
  "Three-Dimensional Grid Adaption Using a Mixed-Element Decomposition Method";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 464 - 467.
  
  
• W.-C. Liang, Y.-J. Wu, H. Hennacy, S. Singh, N. Goldsman, I. Mayergoyz:
  "2D MOSFET Simulation by Self-Consistent Solution of the Boltzmann and Poisson Equations Using a Generalized Spherical Harmonic Expansion";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 122 - 125.
  
  
• D. Liebig:
  "Cellular Automata Simulation of GaAs-IMPATT-Diodes";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 74 - 77.
  
  
• A. Liegmann, K. Gärtner, W. Fichtner:
  "Efficient Hybrid Solution of Sparse Linear Systems";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 456 - 459.
  
  
• C.-C. Lin, M.E. Law:
  "2D Adaptive Simulation of Dopant Implantation and Diffusion";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 282 - 285.
  
  
• J. Litsios, B. Schmithüsen, P.H. Woerlee:
  "Large Scale Thermal Mixed Mode Device and Circuit Simulation";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 368 - 371.
  
  
• J. Lopez-Serrano, A.J. Strojwas:
  "Layout Design Rule Generation with TCAD Tools for Manufacturing";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 62 - 65.
  
  
• K. Lucas, H. Tanabe, C.M. Yuan, A.J. Strojwas:
  "Efficient and Rigorous 3D Model for Optical Lithography Simulation";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 14 - 17.
  
  
• H. Masuda:
  "T²CAD: Total Design for Sub-μm Process and Device Optimization with Technology-CAD";
  Talk: Conference, Erlangen, Germany (invited); 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 408 - 415.
  
  
• S. Mijalkovic:
  "An Exponentially Fitted Finite Element Scheme for Diffusion Process Simulation on Coarse Grids";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 182 - 185.
  
  
• H. Miura, Y. Tanizaki:
  "Effect of Process-Induced Mechanical Stress on Circuit Layout";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 147 - 150.
  
  
• M. Miura-Mattausch, A. Rahm, O. Prigge:
  "Influence of Analytical MOSFET Model Quality on Analog Circuit Simulation";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 278 - 281.
  
  
• R. Mlekus, C. Ledl, E. Strasser, S. Selberherr:
  "Polygonal Geometry Reconstruction after Cellular Etching or Deposition Simulation";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 50 - 53.
  
  
• W. Molzer:
  "Ge Profile for Minimum Neutral Base Transit Time in Si/Si_1-yGe_y";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 102 - 105.
  
  
• C.G. Morton, C.M. Snowden, H.J. Howes:
  "A New Quasi Two-Dimensional HEMT Model";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 352 - 355.
  
  
• S.A. Mujtaba, M.R. Pinto, D.M. Boulin, C.S. Rafferty, R.W. Dutton:
  "An Accurate NMOS Mobility Model for 0.25μm MOSFETs";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 424 - 427.
  
  
• M. Mukai, T. Tatsumi, N. Nakauchi, T. Kobayashi, K. Koyama, Y. Komatsu, R. Bauer, G. Rieger, S. Selberherr:
  "The Simulation System for Three-Dimensional Capacitance and Current Density";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 151 - 154.
  
  
• A. Nasr, J. Faricelli, N. Khalil, C.-L. Huang:
  "Ultra-High Performance, Low-Power 0.2μm CMOS Microprocessor Technology and TCAD Requirements";
  Talk: Conference, Erlangen, Germany (invited); 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 126 - 134.
  
  
• A. Nathan, T. Manku:
  "Piezoresistance and the Drift-Diffusion Model in Strained Silicon";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 94 - 97.
  
  
• A. Nathan, N.R Swart:
  "Quasi Three-Dimensional Simulation of Heat Transport in Thermal-Based Microsensors";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 30 - 31.
  
  
• I. Nefedov, A. Andronov:
  "Monte Carlo Simulation of Inverted Hot Carrier Distribution Under Strong Carrier Optical Phonon Scattering";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 325 - 327.
  
  
• M. Netzel, R. Herzer:
  "Simulation of Complex Planar Edge Termination Structures for Vertical IGBTs by Solving the Complete Semiconductor Device Equations";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 290 - 293.
  
  
• G.F. Niu, G. Ruan, T.A. Tang:
  "Modeling of Substrate Bias Effect in Bulk and SOI SiGe-Channel p-MOSFETs";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 190 - 193.
  
  
• Y. Ohno, T. Kishimoto, K. Sonoda, H. Sayama, S. Komori, A. Kinomura, Y. Horino, K. Fujii, T. Nishimura, N. Kotani, M. Takai, H. Miyoshi:
  "Estimation of the Charge Collection for the Soft-Error Immunity by the 3D Device Simulation and the Quantitative Investigation";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 302 - 305.
  
  
• P. Oldiges:
  "Alpha-Particle Induced Soft Error Rate Evaluation Tool and User Interface";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 310 - 313.
  
  
• M. Orlowski, W.J. Taylor:
  "New Spreading Resistance Effect for Sub-0.50μm MOSFETs: Model and Simulation";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 159 - 162.
  
  
• P. Packan:
  "Simulating Deep Submicron Technologies: An Industrial Perspective";
  Talk: Conference, Erlangen, Germany (invited); 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 34 - 41.
  
  
• A. Palma, J.A. Jimenez-Tejada, A. Godoy, J.E. Carceller:
  "Monte Carlo Simulation of Carrier Capture at Deep Centers for Silicon and Gallium Arsenide Devices";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 380 - 383.
  
  
• C. Pichler, N. Khalil, G. Schrom, S. Selberherr:
  "TCAD Optimization Based on Task-Level Framework Services";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 70 - 73.
  
  
• C. Pigorsch, R. Stenzel, W. Klix:
  "Coupled 2D Microscopic/Macroscopic Simulation of Nanoelectronic Heterojunction Devices";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 230 - 233.
  
  
• D. Reznik:
  "Generalized Drift-Diffusion Model of Bipolar Transport in Semiconductors";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 254 - 257.
  
  
• G. Rieger, S. Halama, S. Selberherr:
  "A Programmable Tool for Interactive Wafer-State Level Data Processing";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 58 - 61.
  
  
• M. Rottinger, T. Simlinger, S. Selberherr:
  "Two-Dimensional Transient Simulation of Charge-Coupled Devices Using MINIMOS NT";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 440 - 443.
  
  
• H.A. Rueda, M.E. Law:
  "Algorithms for the Reduction of Surface Evolution Discretization Error";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 46 - 49.
  
  
• A.-C. Salaün, H. Lhermite, B. Fortin, O. Bonnaud:
  "A 2D Modeling of Metal-Oxide Polycrystalline Silicon-Silicon (MOPS) Structures for the Determination of Interface State and Grain Boundary State Distribution";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 428 - 431.
  
  
• D. Schipanski, Z. Gergintschew, J. Kositza:
  "Application of the Two-Dimensional Numerical Simulation for the Description of Semiconductor Gas Sensors";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 18 - 21.
  
  
• M. Schröter, D.J. Walkey:
  "Scaling Considerations of Bipolar Transistors Using 3D Device Simulation";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 210 - 213.
  
  
• C. Schulz-Mirbach:
  "The Path Integral Monte Carlo Method for Quantum Transport on a Parallel Computer";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 392 - 395.
  
  
• K. Shigeta, K. Tanaka, T. Iizuka, H. Kato, H. Matsumoto:
  "A New Statistical Enhancement Technique in Parallelized Monte Carlo Device Simulation";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 384 - 387.
  
  
• P. Shiktorov, V. Gruzinskis, E. Starikov, L. Reggiani, L. Varani:
  "Hydrodynamic Modeling of Electronic Noise by the Transfer Impedance Method";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 314 - 317.
  
  
• T. Shimizu, Y. Zaitsu, S. Matsumoto, E. Arai, M. Yoshida, T. Abe:
  "Determination of Vacancy Diffusivity in Silicon for Process Simulation";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 444 - 447.
  
  
• A. Simionescu, G. Hobler, F. Lau:
  "Monte Carlo Simulation of Multiple-Species Ion Implantation and its Application to the Modeling of 0.1μm PMOS Devices";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 484 - 487.
  
  
• P. Smeys, P.B. Griffin, K.C. Saraswat:
  "An Improved Calibration Methodology for Modeling Advanced Isolation Technologies";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 42 - 45.
  
  
• A.W. Smith, K.F. Brennan:
  "Comparison of Hydrodynamic Formulations for Non-Parabolic Semiconductor Device Simulations";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 274 - 277.
  
  
• M.-S. Son, H.-S. Park, H.J. Hwang:
  "Three-Dimensional Monte Carlo Simulation of Boron Implantation into <100> Single-Crystal Silicon Considering Mask Structure";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 214 - 217.
  
  
• K. Sonoda, M. Yamayi, K. Taniguchi, C. Hamaguchi:
  "Impact Ionization Model Using Second- and Fourth-Order Moments of Distribution Functions";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 420 - 423.
  
  
• E. Starikov, P. Shiktorov, V. Gruzinskis, L. Reggiani, L. Varani:
  "Monte Carlo Simulation of S-Type Negative Differential Conductance in Semiconductor Heterostructures";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 318 - 321.
  
  
• H. Stippel, K. Reddy:
  "Accurate Modeling of Ti/TiN Thin Film Sputter Deposition Processes";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 242 - 245.
  
  
• K. Tarnay, F. Masszi, T. Kocsis, A. Poppe:
  "Modeling of Impact Ionization in a Quasi Deterministic 3D Particle Dynamics Semiconductor Device Simulation Program";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 238 - 241.
  
  
• Y.A. Tkachenko, C.J. Wei, J.C. Hwang, D.M. Hwang:
  "Numerical Analysis of Hot-Electron Effects in GaAs MESFETs";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 298 - 301.
  
  
• V.I. Tolstikhin, M. Willander:
  "Modeling of a Hot Electron Injection Laser";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 206 - 209.
  
  
• B. Troyanovsky, Z. Yu, R.W. Dutton:
  "Large Signal Frequency Domain Device Analysis via the Harmonic Balance Technique";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 114 - 117.
  
  
• C. Tsamis, D. Tsoukalas:
  "Modeling of Silicon Interstitial Surface Recombination Velocity at Non-Oxidizing Interfaces";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 452 - 455.
  
  
• M.J. van Dort, D.B. Klaassen:
  "Sensitivity Analysis of an Industrial CMOS Process Using RSM Techniques";
  Talk: Conference, Erlangen, Germany (invited); 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 432 - 435.
  
  
• M.J. van Dort, J.W. Slotboom, P.H. Woerlee:
  "Scaling of Conventional MOSFETs to the 0.1μm Regime";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 372 - 379.
  
  
• M.C. Vecchi, M. Rudan:
  "Modeling Impact-Ionization in the Framework of the Spherical-Harmonics Expansion of the Boltzmann Transport Equation with Full-Band Structure Effects";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 416 - 419.
  
  
• E. Velmre, A. Udal, F. Masszi, E. Nordlander:
  "Investigation of Silicon Carbide Diode Structures via Numerical Simulations Including Anisotropic Effects";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 340 - 343.
  
  
• C.J. Wei, H.-C. Chung, Y.A. Tkachenko, J.C. Hwang:
  "Capacitance Model of Microwave InP-Based Double Heterojunction Bipolar Transistors";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 298 - 301.
  
  
• U. Wiesner, R. Sittig:
  "Control of Plasma Dynamics within Double-Gate Turn-Off Thyristors (D-GTO)";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 266 - 269.
  
  
• K. Wimmer, M. Noell, W.J. Taylor, M. Orlowski:
  "A Data Model for a Technology and Simulation Archive";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 54 - 57.
  
  
• U. Witkowski, D. Schroeder:
  "Numerical and Analytical Modeling of Head Resistances of Diffused Resistors";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 155 - 158.
  
  
• U. Witkowski, D. Schroeder:
  "Simulations of the Forward Behavior of Hybrid Schottky-/pn-Diodes";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 356 - 359.
  
  
• D.W. Yergeau, E.C. Kan, M.J. Gander, R.W. Dutton:
  "ALAMODE: A Layered Model Development Environment";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 66 - 69.
  
  
• J. Zarebski, K. Gorecki:
  "DC Electrothermal Hybrid BJT Model for SPICE";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 306 - 309.
  
  
• J. Zheng, J.P. McVittie, M.J. Kushner, Z. Krivokapic:
  "Comprehensive Reactor, Plasma, and Profile Simulator for Plasma Etch Processes";
  Talk: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 170 - 173.
  
  
• S.P. Zimin, V.S. Kuznetsov, A.V. Prokaznikov:
  "Two-Barrier Model for Description of Charge Carriers Transport Processes in Structures with Porous Silicon";
  Poster: Conference, Erlangen, Germany; 1995-09-06 - 1995-09-08; in: "Proc. of SISDEP", (1995), 3-211-82736-6; 322 - 324.