SISDEP 1993 Proceedings

• A. Abou-Elnour, K . Schuenemann:
  "An Efficient and Accurate Method to Calculate the Two-Dimensional Scattering Rates in Heterostructure Semiconductors";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 249 - 252.
  
  
• A. Abramo, R. Brunetti, C. Jacoboni, F. Venturi, E. Sangiorgi:
  "Monte Carlo Simulation of Carrier-Carrier Interaction for Silicon Devices";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 181 - 184.
  
  
• W. Allegretto, A. Nathan, T. Manku:
  "Numerical Simulation of Piezo-Hall Effects in n-Doped Silicon Magnetic Sensors";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 377 - 380.
  
  
• M. Andersson, M. Grönlund, P. Kuvialainen:
  "Physical IGBT Model for Circuit Simulations";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 341 - 344.
  
  
• A.F. Anwar, K. W. Liu, M.M. Jahan:
  "Noise in Si/Si_1-xGe_x n-Channel HEMTs and p-Channel FETs";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 273 - 276.
  
  
• Y. Apanovich, B. Cottle, B. Freydin, E. Lyumkis, B. Polsky, P. Blakey:
  "Numerical Modeling of Electrothermal Effects in Semiconductor Devices";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 289 - 292.
  
  
• Y. Apanovich, E. Lyumkis, B. Polsky, P. Blakey:
  "An Investigation of Coupled and Decoupled Iterative Algorithms for Energy Balance Calculations";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 233 - 236.
  
  
• G.A. Armstrong, W.D. French:
  "Modeling of Breakdown in SOI MOSFETs";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 397 - 400.
  
  
• A. Asenov, D. Reid, J.R. Barker, N. Cameron, S.P. Beaumont:
  "Finite Element Simulation of Recess Gate MESFETs and HEMTs: The Simulator H2F";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 265 - 268.
  
  
• B. Baccus, E. Vandenbossche:
  "Modeling High Concentration Boron Diffusion with Dynamic Clustering: Influence of the Initial Conditions";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 133 - 136.
  
  
• D. Bardes, R. Alcubilla:
  "Analysis of Charge Storage in Polysilicon Contacts";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 293 - 296.
  
  
• A. Bauer, H. Noll, H. Pimingstorfer:
  "Hot Carrier Suppression for an Optimized 10V CMOS Process";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 221 - 224.
  
  
• A. Benvenuti, G. Ghione, C.U. Naldi:
  "Non-Stationary Transport HBT Modeling under Non-Isothermal Conditions";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 453 - 456.
  
  
• W. Bergner, B. Seidl, H. Wurzer, R. Mahnkopf, H. Klose:
  "Influence of Oxide Damage on Degradation Effects in Bipolar Transistors";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 73 - 76.
  
  
• C. Brisset, P. Dollfus, N. Chemarin, R. Castagne, P. Hesto:
  "Three-Dimensional Monte Carlo Simulation of Submicronic Devices";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 189 - 192.
  
  
• H. Brunner, Y.C. Gerstenmajer, H.J. Mattausch:
  "Impact of Cell Geometries and Electrothermal Effects on IGBT Latch-Up in 2D Simulation";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 45 - 48.
  
  
• R. Cartuyvels, R. Booth, S. Kubicek, L. Dupas, K.M. De Meyer:
  "A Powerful TCAD System Including Advanced RSM Techniques for Various Engineering Optimization Problems";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 29 - 32.
  
  
• K.-W. Chai, Z.-M. Li, J.G. Simmons, S.P. McAlister:
  "Numerical Simulation of Auger-Induced Hot Electron Transport in InGaAsP/InP Double Heterojunction Laser Diodes: Hydrodynamics versus Drift and Diffusion";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 497 - 500.
  
  
• M. Charef, F. Dessenne, J.L. Thobel, L. Baudry, R. Fauquembergue:
  "The Influence of Technological Parameters on Ultra-Short Gate Si-NMOS Transistor Performances";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 305 - 308.
  
  
• D. Chen, Z. Yu, K.-C. Wu, R. Goossens, R.W. Dutton:
  "Dual Energy Transport Model with Coupled Lattice and Carrier Temperatures";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 157 - 160.
  
  
• P. Chenevier, G. Kamarinos, G. Pananakakis:
  "Semi-Analytical Universal Simulation of the Electrical Properties of the Permeable Base Transistor";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 309 - 312.
  
  
• P. Ciampolini, A. Rossi, A. Pierantoni, M. Rudan:
  "Electro-Elastic Simulation of Piezoresistive Pressure Sensor";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 381 - 384.
  
  
• M. M. De Souza, G.A. Amaratunga:
  "Self-Diffusion in Silicon Using the Ackland Potential";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 101 - 104.
  
  
• R. Deutschmann, C. Fischer, C. Sala, S. Selberherr:
  "Evaluation of Effective Device Parameters by Comparison of Measured and Simulated C-V Characteristics for Conventional and Pseudomorphic HEMTs";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 461 - 464.
  
  
• D. Donoval, J. Racko, C.M. Snowden:
  "Importance of Hole Generation on Modeling and Simulation of Schottky and MESFET Structures";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 485 - 488.
  
  
• A. Erlebach, R. Stephan, G. Dallmann:
  "Determination of EBIC Response by Two-Dimensional Device Simulation";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 369 - 372.
  
  
• J. Esfandyari, G. Hobler, S. Senkader, H. Pötzl, B. Murphy:
  "Simulation of Denuded Zone Formation in CZ Silicon";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 145 - 148.
  
  
• B. Fatemizadeh, R. Constapel, D. Silber:
  "Modeling of IGBTs and LIGBTs for Power Circuit Simulation";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 337 - 340.
  
  
• W. Feiler, W. Gerlach, U. Wiese:
  "The Static and Dynamic Behavior of NPT-IGBTs with Different p⁺-Anode Designs";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 313 - 316.
  
  
• T. Felgentreff, G. Olbrich, P. Russer:
  "A Small-Signal Databased HEMT Model for Nonlinear Time Domain Simulation";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 269 - 272.
  
  
• T. Feudel, W. Fichtner, N. Strecker, R. Zingg, G. Dallmann, E. Döring:
  "Improved Technology Understanding through Using Process Simulation and Measurements";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 217 - 220.
  
  
• D. Freund, A . Kloes, A. Kostka:
  "A 2D Analytical Model of Current Flow in Lateral Bipolar Transistor Structures";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 425 - 428.
  
  
• J. Fuhrmann, K. Gärtner:
  "Multigrid Becomes a Competitive Algorithm for some 3D Device Simulation Problems";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 421 - 424.
  
  
• F. Gamiz, J.A. Lopez-Villanueva, J. Banqueri, J.A. Jimenez-Tejada, P. Cartujo:
  "Accurate Determination of Silicon Inversion Layer Mobility by the Monte Carlo Method";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 481 - 484.
  
  
• Z. Gergintschew, D. Schipanski:
  "Models for the Chemo-Physical Reactions at the Sensitive Layer of Semiconductor Gas Sensors and their Application in the Simulation of these Devices";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 385 - 388.
  
  
• Y.C. Gerstenmaier, H. Brunner:
  "2D Electrothermal Simulation and Failure Analysis of GTO Turn-Off with Complete Chopper Circuit Parasitics";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 53 - 56.
  
  
• R. Ghodsi, Y.T. Yeow, M.K. Alam:
  "Numerical Simulation of MOSFETs Gate Capacitances for the Evaluation of Hot Carrier Generated Interface States and Trapped Carriers";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 281 - 284.
  
  
• T. Gonzales, D. Pardo, L. Varani, L. Reggiani:
  "Monte Carlo Analysis of Voltage Fluctuations in Two-Terminal Semiconductor Devices";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 193 - 196.
  
  
• M. Grabe, C. Peschke:
  "Extraction of Parameters for Balance Equations from Monte Carlo Simulations";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 301 - 304.
  
  
• V. Grunzinskis, E. Starikov, P. Shiktorov, L. Reggiani, M. Saraniti, L. Varani:
  "Generation and Amplification of Microwave Power in Submicron n⁺nn ⁺-Diodes";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 333 - 336.
  
  
• V. Gruzinskis, E. Starikov, P. Shiktorov, L. Reggiani, M. Saraniti, L. Varani:
  "A Closed Hydrodynamic Model for Hot Carrier Transport in Submicron Semiconductor Devices";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 149 - 152.
  
  
• M. Hackel, H. Kosina, S. Selberherr:
  "Electron Transport in Silicon Dioxide at Intermediate and High Electric Fields";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 65 - 68.
  
  
• H. Happy, F. Kapche-Tagne, F. Danneville, J. Alamkan, G. Dambrine, A. Cappy:
  "HELENA: A Physical Modeling for the DC, AC, Noise and Nonlinear HEMT Performance";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 465 - 468.
  
  
• P. Hazdra, J. Vobecky:
  "Modeling of Localized Lifetime Tailoring in Silicon Devices";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 437 - 440.
  
  
• O. Heinreichsberger, M. Thurner, S. Selberherr:
  "Practical Use of a Hierarchical Linear Solver Concept for 3D MOS Device Simulation";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 85 - 88.
  
  
• G. Heiser, A.G: Aberle, S.R. Wenham, M.A. Green:
  "Two-Dimensional Numerical Simulations of High Efficiency Silicon Solar Cells";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 389 - 392.
  
  
• K. Hess, L.F. Register:
  "Modeling Nanostructure Devices";
  Talk: Conference, Vienna, Austria (invited); 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 9 - 16.
  
  
• N. Hitschfeld, W. Fichtner:
  "3D Grid Generation for Semiconductor Devices Using a Fully Flexible Refinement Approach";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 413 - 416.
  
  
• S. Hong, J. Kim, J. Lee, C. Park, J . Lee, T. Won:
  "Two-Dimensional Numerical Analysis on the Diffusion-Induced Degradation of AlGaAs/GaAs Heterojunction Bipolar Transistors";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 253 - 256.
  
  
• K. Horio, A. Nakatani:
  "Simulations of Carrier-Blocking Effects on Cutoff Frequency Characteristics for AlGaAs/GaAs HBTs with Insulating and Semi-Insulating External";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 449 - 452.
  
  
• S. Imanaga, K. Hane, Y. Hayafuji:
  "Inverse Modeling of Impact Ionization Rate Formula through Comparison between Simulation and Experimental Results of MOS Device Characteristics";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 473 - 476.
  
  
• H.U. Jäger:
  "Simulation of High-Dose Ion Implantation Induced Transient Diffusion and of Electrical Activation of Boron in Crystalline Silicon";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 137 - 140.
  
  
• O. Kalz, D Schröder:
  "PARDESIM - A Parallel Device Simulator on a Transputer-Based MIMD-Machine";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 245 - 248.
  
  
• W. Kanert, N. Krischke, K. Wiesinger:
  "Optimization of DMOS Transistors for Smart Power Technologies by Simulation and Response Surface Methods";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 213 - 216.
  
  
• K. Kells, S. Müller, G. Wachutka, W. Fichtner:
  "Simulation of Self-Heating Effects in a Power pin-Diode";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 41 - 44.
  
  
• T. Kerkhoven:
  "On the Scharfetter-Gummel Box Method";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 237 - 240.
  
  
• A. Kersch, W. Morokoff:
  "Radiative Heat Transfer with Quasi Monte Carlo Methods";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 373 - 376.
  
  
• N. Khalil, J. Faricelli:
  "MOSFET Two-Dimensional Doping Profile Determination";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 365 - 368.
  
  
• S.V. Kletskii:
  "Computer Simulation of Inverse Problems of Crystal Growth and Photoconductivity of Graded Band Gap Semiconductors";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 325 - 328.
  
  
• E. Klostermeier, J. Wilk, R. Laur:
  "Model-Independent Distortion Analysis in SPICE Realized for Complex Modeled Bipolar and MOS Transistors";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 345 - 348.
  
  
• B.H. Krabbenborg, H.C. de Graaff, A.J. Mouthan, H. Boezen, A. Bosma, C. Tekin:
  "3D Thermal/Electrical Simulation of Breakdown in a BJT Using a Circuit Simulator and a Layout-to-Circuit Extraction Tool";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 57 - 60.
  
  
• Z. Krivokapic, W.D. Heavlin:
  "Predicting Manufacturing Variabilities for Deep Submicron Technologies: Integration of Process, Device, and Statistical Simulations";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 229 - 232.
  
  
• W. Kuzmicz, W. Denisiuk, J. Gempel, Z. Jaworski, M. Niewczas, A. Pfitzner, E. Piwowarska, W. Pleskazc, A. Wojtasik:
  "Coupling a Statistical Process-Device Simulator with a Circuit Layout Extractor for a Realistic Circuit Simulation of VLSI Circuits";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 37 - 40.
  
  
• M.E. Law:
  "Challenges to Achieving Accurate Three-Dimensional Process Simulation";
  Talk: Conference, Vienna, Austria (invited); 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 1 - 8.
  
  
• M. Lee, K. Asada:
  "A Newly Proposed Delay Improvement on CMOS/SOI Future Technology";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 349 - 352.
  
  
• C.C. Leung, P.A. Childs:
  "Drift Velocities and Momentum Distributions of Hot Carriers in MOSFETs at Low Supply Voltages";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 277 - 280.
  
  
• A. Liegmann, W. Fichtner:
  "The Application of Sparse Supernodal Factorization Algorithms for Structurally Symmetric Linear Systems in Semiconductor Device Simulation";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 77 - 80.
  
  
• P. Lindorfer, C. Bulucea:
  "Modeling of VLSI MOSFET Characteristics Using Neural Networks";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 33 - 36.
  
  
• S. List, P. Pichler, H. Ryssel:
  "Atomistic Evaluation of Diffusion Theories for the Diffusion of Dopants in Vacancy Gradients";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 97 - 100.
  
  
• J. Litsios, S. Müller, W. Fichtner:
  "Mixed-Mode Multi-Dimensional Device and Circuit Simulation";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 129 - 132.
  
  
• T. Manku, A. Nathan:
  "Quasi Two-Dimensional Numerical Simulation of SiGe/Si MOSFETs";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 405 - 408.
  
  
• H. Masuda, H. Pimingstorfer, H. Sato, K. Tsuneno, K. Ichikawa, H. Tobe, H. Miyazawa, M. Nakamura, K. Kajigaya, O. Tsuchiya, T. Matsumoto:
  "Applied TCAD in Mega-Bits Memory Design";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-08; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 21 - 24.
  
  
• M. McGee, A.J. Walton:
  "Process Optimization in a Production Environment Using Simulation and Taguchi Methods";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 209 - 212.
  
  
• H. Miura, N. Saito, N. Okamoto:
  "Mechanical Stress Simulation during Gate Formation of MOS Devices Considering Crystallization-Induced Stress of p-Doped Silicon Thin Films";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 177 - 180.
  
  
• M.K. Moallemi, H. Zhang:
  "Multizone Adaptive Grid Generation Technique for Multilayer Multistep Process Simulation";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 205 - 208.
  
  
• W. Molzer, T.F. Meister, S. Marksteiner:
  "High Speed Performance of Si Homo- and Si/Si_1-xGe_x Heterojunction Bipolar Transistors";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 257 - 260.
  
  
• S. Mottet, M. Kandouci:
  "Simulation of the Conduction Mechanisms in Polycrystalline Silicon Thin Film Transistors";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 297 - 300.
  
  
• M. Mouis, H.J. Gregory, S. Denorme, D. Mathiot, P. Ashburn, D.J. Robbins, J.L. Glasper:
  "Physical Modeling of the Enhanced Diffusion of Boron due to Ion Implantation in Thin Base npn-Bipolar Transistors";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 141 - 144.
  
  
• P. Mounaix, X. Wallart, J.M. Libberecht, D. Lippens:
  "Charge Distribution and Capacitance of Double Barrier Resonant Tunneling Diodes";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 329 - 332.
  
  
• A.F. Murray, W.A. Lane:
  "Simulation of a Novel Scheme for 700-1000V Wiring Applications";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 353 - 356.
  
  
• G.F. Niu, G. Ruan, T.A. Tang:
  "An Analytical Device Model Including Velocity Overshoot for Sub-Quarter Micrometer MOSFET";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 285 - 288.
  
  
• M. Orlowski:
  "Rigorous Microscopic Drift-Diffusion Theory and its Applications to Nanostructures";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 93 - 96.
  
  
• C. Pichler, S. Selberherr:
  "Process Flow Representation within the VISTA Framework";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 25 - 28.
  
  
• A. Pierantoni, A. Liuzzo, P. Ciampolini, G. Baccarani:
  "Three-Dimensional Implementation of a Unified Transport Model";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 125 - 128.
  
  
• J.L. Pleumeekers, T. Mercier, S. Mottet, F. Clerot:
  "Numerical Modeling and Simulation of Multi-Electrode Semiconductor Optical Amplifiers";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 317 - 320.
  
  
• S.V. Polyakov, V.I. Tolstikhin:
  "Simulation of Carrier Heating Induced Picosecond Operation of GaInAsP/InP Laser Diode";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 321 - 324.
  
  
• A. Poncet:
  "Accurate Simulation of Mechanical Stresses in Silicon during Thermal Oxidation";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 173 - 176.
  
  
• F. Poupaud:
  "About Boltzmann Equations for Transport Modeling in Semiconductors";
  Talk: Conference, Vienna, Austria (invited); 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 17 - 20.
  
  
• G. Punz:
  "3D Simulation of MOS Transistors with Inversion Condition in Two Directions";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 401 - 404.
  
  
• A.D. Sadovnikov, D.J. Roulston:
  "Critical Assessment of Different Hydrodynamical Models for Avalanche Multiplication Calculation in Silicon Bipolar Transistors";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 153 - 156.
  
  
• A.D. Sadovnikov, A. Sarangan, W.- P. Huang:
  "Preliminary Results of Quantum Directional Coupler Simulation Using a Beam Propagation Method";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 493 - 496.
  
  
• Z.H. Sahul, R.W. Dutton, M. Noell:
  "Grid and Geometry Techniques for Multilayer Process Simulation";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 417 - 420.
  
  
• A. Schenk, S. Müller:
  "Analytical Model of the Metal-Semiconductor Contact for Device Simulation";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 441 - 444.
  
  
• W.H. Schilders:
  "Construction of Stable Discretization Schemes for the Hydrodynamic Device Model";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 121 - 124.
  
  
• M. Schlett:
  "A Spectral Method for the Numerical Simulation of Transit-Time Devices";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 241 - 244.
  
  
• W. Schoenmaker, R. Vankemmel:
  "A Numerical Implementation of the Energy Balance Equations Based on Physical Considerations";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 117 - 120.
  
  
• D Schröder, T. Ostermann, O. Kalz:
  "Nonlinear Contact Resistance and Inhomogeneous Current Distribution at Ohmic Contacts";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 445 - 448.
  
  
• G. Schrom, S. Selberherr, F. Unterleitner, J. Trontelj, V. Kunc:
  "Analysis of a CMOS-Compatible Vertical Bipolar Transistor";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 261 - 264.
  
  
• A.V. Schwerin, W. Bergner, H. Jacobs:
  "Efficient and Accurate Simulation of EEPROM Write Time and its Degradation Using MINIMOS";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 69 - 72.
  
  
• M. Seifert, F. Richter, R.G. Spallek:
  "Simulation of Sputter Deposition Process by DUPSIM";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 197 - 200.
  
  
• V. Senez, D. Collard, B. Baccus:
  "Quantitative 2D Stress Dependent Oxidation with Viscoelastic Model";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 165 - 168.
  
  
• K. Sherif, G. Salmer, O.L. Sayed:
  "An Enhanced Two-Dimensional Hydrodynamic Energy Model for Transient Time Simulation of Complex Heterostructure Field Effect Transistors";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 457 - 460.
  
  
• M.W. Shin, T.A. Winslow, G.L. Bilbro, R.J. Trew:
  "Large-Signal RF and DC Performance of p-Type Diamond FETs";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 409 - 412.
  
  
• A. Simionescu, G. Hobler:
  "Two-Dimensional Monte Carlo Simulation of Ion Implantation in Crystalline Silicon Considering Damage Formation";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", A. Simionescu (ed.); (1993), 3-211-82504-5; 361 - 364.
  
  
• C. Simon, M. Sadkane, S. Mottet:
  "Newton-GMRES Method for Coupled Nonlinear Systems Arising in Semiconductor Device Simulation";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 81 - 84.
  
  
• R. Sitte, S. Dimitrijev, H.B. Harrison:
  "Electrical Parameter Sensitivity of Deep Submicron and Micron MOSFET Devices with Variation in Processing Conditions";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 225 - 228.
  
  
• L. L. So, D. Chen, Z. Yu, R.W. Dutton:
  "Improvement of Initial Solution Projection in Solving General Semiconductor Equations Including Energy Transport";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 113 - 116.
  
  
• M. Stecher, B. Meinerzhagen, I. Bork, W.L. Engl:
  "On the Influence of Thermal Diffusion and Heat Flux on Bipolar Device and Circuit Performance";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 49 - 52.
  
  
• S. Sterk, S.W. Glunz:
  "Simulation in High Efficiency Solar Cell Research";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 393 - 396.
  
  
• E. Strasser, S. Selberherr:
  "A General Simulation Method for Etching and Deposition Processes";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 357 - 360.
  
  
• R. Strasser, G. Nanz, W. Joppich:
  "Process Simulation for Non-Planar Structures with the Multigrid Solver LiSS";
  Poster: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 201 - 204.
  
  
• S.C. Sun, H.Y. Chang:
  "Oxidation Simulation and Growth Kinetics of Thin SiO₂ in Pure N₂O";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 169 - 172.
  
  
• D. Tammaro, K. Hess, F. Capasso:
  "Thermionic Current in Direct-Indirect Energy-Gap GaAs/Al_x Ga_1-xAs Interfaces";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 489 - 492.
  
  
• K. Tarnay, F. Masszi, A. Poppe, P. Verhas, T. Kocsis, Z.S. Kohari:
  "The MicroMOS 3D Monte Carlo Simulation Program - A Tool for Verifying the MINIMOS Mobility Models";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 477 - 480.
  
  
• E. Tomacruz, M. Zuniga, R. Guerrieri, A. Neureuther, A. Sangiovanni-Vicentelli:
  "3D Diffusion Models for Chemically-Amplified Resists Using Massively Parallel Processors";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 109 - 112.
  
  
• K.P. Traar, A.V. Schwerin:
  "Non-Local Oxide Injection Models";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 61 - 64.
  
  
• H.A. Van der Vorst, D.R. Fokkema, G.L. Sleijpen:
  "Further Improvements in Non-Symmetric Hybrid Iterative Methods";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 89 - 92.
  
  
• M.J. van Dort, J.W. Slotboom, G. Streutker, P.H. Woerlee:
  "Lifetime Calculations of MOSFETs Using Depth-Dependent Non-Local Impact Ionization";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 469 - 472.
  
  
• E. Velmre, A. Koel, F. Masszi:
  "Modeling of Electron-Hole Scattering in Semiconductor Power Device Simulation";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 433 - 436.
  
  
• D. Ventura, A. Gnudi, G. Baccarani:
  "Inclusion of Electron-Electron Scattering in the Spherical Harmonics Expansion Treatment of the Boltzmann Transport Equation";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 161 - 164.
  
  
• J. Voves:
  "Monte Carlo MOSFET Simulator Including Inversion Layer Quantization";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 185 - 188.
  
  
• G. Wachutka:
  "Consistent Treatment of Carrier Emission and Capture Kinetics in Electrothermal and Energy Transport Models";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 429 - 432.
  
  
• C.S. Yun, O.K. Kwon, C.G. Hwang, H.J. Hwang:
  "Three-Dimensional Numerical Simulation for Low Dopant Diffusion in Silicon";
  Talk: Conference, Vienna, Austria; 1993-09-07 - 1993-09-09; in: "Proc. of SISDEP", (1993), 3-211-82504-5; 105 - 108.