SISDEP 1991 Proceedings

• A. Abramo, C. Fiegna, F. Venturi, R. Brunetti, E. Sangiorgi, C. Bergonzoni, B. Ricco:
  "A New Microscopic Model for Hole Transport in Silicon with Application to Submicron LDD MOSFETs";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 257 - 264.
  
  
• G. Albinus:
  "Thermodynamic Aspects of the Energy Model of Hot Carrier Transport in Semiconductor Devices";
  Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 493 - 498.
  
  
• J.V. Ashby, C.H. Fitzsimons, R.F. Fowler, C. Greenough, P.J. Mole, W.H. Schilders:
  "Three-Dimensional Adaptive Semiconductor Device Simulation";
  Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 467 - 476.
  
  
• V. Axelrad, G. Rollins, S. Motzny, M. Jaczynski:
  "Implementation and Application of the Hydrodynamic Model in a General Purpose Device Simulator";
  Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 483 - 492.
  
  
• B. Baccus, T. Wada:
  "On the Development of a Non-Equilibrium Diffusion Model";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 93 - 102.
  
  
• H.M. Boots, C.G. de Kort, M.F. Schuurmans, D. Arnold, J.M. Higman:
  "Monte Carlo Simulation of Electron and Radiative Emission from Silicon Diodes";
  Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 521 - 526.
  
  
• D. Chen, E. Kan, U. Ravaioli, Z. Yu, R. Dutton:
  "A Self-Consistent Discretization Scheme for Current and Energy Transport Equations";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 235 - 240.
  
  
• P. Ciampolini, A. Pierantoni, G. Baccarani:
  "Three-Dimensional Self-Consistent Modeling of MOS Devices under Non-Isothermal Regime";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 149 - 156.
  
  
• D. Collard, B. Baccus, E. Dubois:
  "Efficient Simulation of Impurity Segregation during Oxidation of Arbitrarily Shaped Multi-Layers Structures";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 125 - 130.
  
  
• M. Driessen, H.A. Van der Vorst:
  "BI-CGSTAB in Semiconductor Modeling";
  Talk: Conference, Zurich, Switzerland (invited); 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 45 - 54.
  
  
• E. Dubois:
  "Determination of Carriers Capture Cross-Sections of Si/SiO₂ States by Means of Process/Device Simulations";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 425 - 432.
  
  
• R. Dürr, P. Pichler, H. Ryssel:
  "On Limitations of Pair-Diffusion Models for Phosphorus Diffusion";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 103 - 112.
  
  
• F. Fasching, H. Read, C. Fischer, S. Selberherr, H. Stippel, W. Tuppa:
  "A PIF Implementation for TCAD Purposes";
  Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 477 - 482.
  
  
• A. Gerodolle, S.K. Jones:
  "Integration in the 2D Multilayer Simulator TITAN of an Advanced Model for Dopant Diffusion in Polysilicon";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 381 - 388.
  
  
• G. Ghione, M. Pirola, C.U. Naldi:
  "Physical Simulation of Small-Signal Rate-Dependent Anomalies in GaAs MESFETs: A Two-Dimensional Frequency-Domain Approach";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 71 - 80.
  
  
• A. Gnudi, D. Ventura, G. Baccarani:
  "One-Dimensional Simulation of a Bipolar Transistor by Means of Spherical Harmonics Expansion of the Boltzmann Transport Equation";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 205 - 214.
  
  
• M. Grupen, K. Hess:
  "Simulation of Transport over Heterojunctions";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 303 - 312.
  
  
• N. Hitschfeld, P. Conti, W. Fichtner:
  "Grid Generation for 3D Non-Planar Semiconductor Device Structures";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 165 - 172.
  
  
• G. Hobler, H. Pötzl, L. Gong, H. Ryssel:
  "Two-Dimensional Monte Carlo Simulation of Boron Implantation in Crystalline Silicon";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 389 - 398.
  
  
• K. Horio, A. Oguchi, H. Yanai:
  "Two-Dimensional Simulations of AlGaAs/GaAs HBTs with Various Collector Structures";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 81 - 90.
  
  
• S. Imanaga, Y. Hayafuji:
  "Monte Carlo Modeling Encompassing the Effective Bulk State as Well as Quasi Two-Dimensional State of Electrons in the MOS Inversion Layer";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 265 - 274.
  
  
• K. Iniewski, C.A. Salama:
  "A Submicron MOSFET Model for Analog Circuit Simulation";
  Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 553 - 562.
  
  
• K. Kells, S. Müller, W. Fichtner, G. Wachutka:
  "Simulating Temperature Effects in Multi-Dimensional Silicon Devices with Generalized Boundary Conditions";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 141 - 148.
  
  
• D.B. Klaassen:
  "Physical Modeling for Bipolar Device Simulation";
  Talk: Conference, Zurich, Switzerland (invited); 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 23 - 44.
  
  
• R. Kornhuber, R. Roitzsch:
  "Self-Adaptive Computation of the Breakdown Voltage of Planar pn-Junctions with Multistep Field Plates";
  Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 535 - 544.
  
  
• J. Korvink, T. Boltshauser, J. Funk, E. Anderheggen, H. Baltes:
  "Modeling of Integrated Lateral Capacitor Sensors";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 367 - 372.
  
  
• H. Kosina, S. Selberherr:
  "Analysis of Filter Techniques for Monte Carlo Device Simulation";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 251 - 256.
  
  
• T. Kuhn, L. Reggiani, L. Varani:
  "A Critical Analysis of the Relaxation Rates for Device Modeling";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 175 - 184.
  
  
• P. Kuivalainen, H. Ronkainen, M. Andersson, S. Eränen:
  "Physical Modeling of Submicron MOSFETs by Using a Modified SPICE MOS3 Model: Application to 0.5μm LDD MOSFETs";
  Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 545 - 552.
  
  
• S. Liang, L.Z. Hou, T. Gu, C.A. Salama:
  "Latch-Up Prevention in Merged Bipolar-MOS Structures for BiCMOS Applications";
  Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 527 - 534.
  
  
• H. Lin, N. Goldsman, I.D. Mayergoyz:
  "A Direct Solution to the Space-Dependent Boltzmann Transport Equation in Silicon";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 195 - 204.
  
  
• K. Lucas, C.-M. Yuan, A. Strojwas:
  "A New Vector Model for Photoresist Bleaching in Optical Lithography";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 375 - 380.
  
  
• T. Manku, A. Nathan:
  "Physical Modeling of Transport Parameters for Strained Layer p-Si_1-xGe_x Devices";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 293 - 302.
  
  
• G. Massobrio, S. Martinoia, M. Grattarola:
  "Ion Sensitive Field Effect Transistor (ISFET) Model Implemented in SPICE";
  Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 563 - 570.
  
  
• H. Masuda, H. Sugihara, R. Ikematsu:
  "Narrow-Channel Effect Simulation of Threshold Voltage and Channel-Conductance in Small MOSFETs Fabricated by LOCOS Process";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 341 - 348.
  
  
• H. Matsuo, J. Tanaka, A. Mishima, K. Tago, T. Toyabe:
  "Three-Dimensional Device Simulation with Arbitrary Curved Boundaries Using the Voronoi Discretization Method";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 157 - 164.
  
  
• J.R. McMacken, S.G. Chamberlain, J.W. Roberts:
  "An Impact Ionization Model for Two-Carrier Energy-Momentum Simulation";
  Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 499 - 504.
  
  
• S. Mijalkovic, D. Pantic, Z. Prijic, N. Stojadinovic:
  "Adaptive Multigrid Strategies for Simulation of Diffusion Processes";
  Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 505 - 512.
  
  
• G. Nanz:
  "A Critical Study of Boundary Conditions in Device Simulation";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 321 - 328.
  
  
• M. Noell, G. Heiser, S. Poon, M. Orlowski:
  "Study of 3D Effects in Box Isolation Technologies";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 331 - 340.
  
  
• M. Orlowski:
  "Challenges for Process Modeling and Simulation in the 90's - An Industrial Perspective";
  Talk: Conference, Zurich, Switzerland (invited); 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 3 - 22.
  
  
• E. Peyrol, L. Pibouleau, J.P. Couderc, S. Domenech:
  "Semiconductor Circuit Fabrication Plant Management by Discrete Simulation";
  Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 571 - 578.
  
  
• F. Pfirsch:
  "Multivariable Optimization of Planar Junction Termination with Respect to Technological Tolerances";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 417 - 424.
  
  
• H. Pimingstorfer, S. Halama, S. Selberherr, K. Wimmer, P. Verhas:
  "A Technology CAD Shell";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 409 - 416.
  
  
• C. Pommerell, W. Fichtner:
  "New Developments in Iterative Methods for Device Simulation";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 243 - 248.
  
  
• L. Rajaonarison, P. Hesto, J.-F. Pone, P. Dollfus:
  "Monte Carlo Simulation of Submicron Devices and Processes";
  Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 513 - 520.
  
  
• H. Read, A. Strojwas, S. Kumashiro:
  "Spatial Domain Decomposition in Silicon Devices and its Application to Transient Device Analysis";
  Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 457 - 466.
  
  
• C. Riccobene, G. Wachutka, J. Bürgler, H. Baltes:
  "Operation of Vertical and Lateral Dual Collector Magneto-Transistors Studied by Exact 2D Simulation";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 349 - 358.
  
  
• W.H. Schilders:
  "Initial Guess Strategies and Extrapolation Techniques for Use in the Gummel Method";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 241 - 242.
  
  
• M. Schrems, M. Budil, G. Hobler, H. Pötzl, J. Hage:
  "Oxygen Precipitation in CZ-Silicon during Multistep Annealing Cycles";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 113 - 124.
  
  
• D. Schroeder:
  "An Analytical Model of Non-Ideal Ohmic and Schottky Contacts for Device Simulation";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 313 - 320.
  
  
• H. Sheng, R. Guerrieri, A. Sangiovanni-Vincentelli:
  "Massively Parallel Computation for Three-Dimensional Monte Carlo Semiconductor Device Simulation";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 285 - 290.
  
  
• C. Simon, S. Mottet, J.E. Viallet:
  "Autoadaptive Mesh Refinement";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 225 - 234.
  
  
• M.A. Stettler, A. Das, M.S. Lundstrom:
  "Self-Consistent Solution of the Boltzmann Transport Equation Using the Scattering Matrix Approach";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 215 - 222.
  
  
• S. Sugino, C.-S. Yao, R. Dutton:
  "Parallelization of Monte Carlo Analysis on Hypercube Multiprocessors and on a Networked EWS System";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 275 - 284.
  
  
• D. Tammaro, A. Benvenuti, G. Ghione:
  "Physical Modeling and Performance Evaluation of Ill-V Heterostructure Avalanche Photodiodes";
  Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 435 - 444.
  
  
• A. Terao, F. Van de Wiele:
  "Numerical and Analytical Models of Selective Laser Annealing of Silicon-On-Insulator for 3D Integration";
  Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 445 - 450.
  
  
• R. Thoma, W.L. Engl:
  "A New Approach for the Derivation of Macroscopic Balance Equations beyond the Relaxation Time Approximation";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 185 - 194.
  
  
• M.J. van Dort, P.H. Woerlee:
  "Quantum-Mechanical Correction to the Threshold Voltage of Deep Submicron n-Channel MOSFETs";
  Poster: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 451 - 456.
  
  
• P. Verhas, S. Selberherr:
  "Automatic Device Characterization";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 399 - 406.
  
  
• G. Verzellesi, M.C. Vecchi, M. Zen, M. Rudan:
  "Optical Generation in Semiconductor Device Analysis - A General Purpose Implementation";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 57 - 64.
  
  
• K. Wimmer, R. Bauer, S. Halama, G. Hobler, S. Selberherr:
  "Transformation Methods for Non-Planar Process Simulation";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 131 - 138.
  
  
• H.-J. Wünsche, H. Wenzel, U. Bandelow, J. Piprek, H. Gajewski, J. Rehberg:
  "2D Modeling of Distributed Feedback Semiconductor Lasers";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 65 - 70.
  
  
• A. Zuckerberger, H. Grüning, K. Johansson:
  "Turn-On Simulation of Field-Controlled Thyristor";
  Talk: Conference, Zurich, Switzerland; 1991-09-12 - 1991-09-14; in: "Proc. of SISDEP", (1991), 3-89191-476-8; 359 - 366.