SISDEP 1986 Proceedings

• C.C. Abbas:
  "COMPASS: A Design Tool for High-Power Semiconductor Devices";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 615 - 629.
  
  
• S.A. Abbasi, A.A. Khan:
  "Profiles of Boron Diffused into Silicon through Narrow Windows";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 287 - 298.
  
  
• G.A. Armstrong, R.S. Ferguson, J.R. Davis:
  "A Device Simulator for Silicon-On-Insulator MOSFETs";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 449 - 467.
  
  
• M.J. Baines, C.P. Please, P.K. Sweby:
  "Numerical Solution of Dopant Diffusion Equations";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 271 - 286.
  
  
• S. Bandyopadhyay, M.E. Klausmeier-Brown, C.M. Maziar, M.S. Lundstrom, S. Datta:
  "Transport Parameters in Submicron Devices";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 217 - 231.
  
  
• T.M. Barton, C.M. Snowden, J.R. Richardson:
  "Modeling of Recessed-Gate MESFET Structures";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 528 - 543.
  
  
• M. Budil, W. Jüngling, E. Guerrero, S. Selberherr, H. Pötzl:
  "Modeling of Point Defect Kinetics during Thermal Oxidation";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 384 - 397.
  
  
• M. Cahay, M. McIennan, S. Bandyopadhyay, S. Datta, M.S. Lundstrom:
  "Self-Consistent Treatment of Electron Propagation in Devices";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 58 - 67.
  
  
• C.G. Cahill, K. McCarthy, W.A. Lane:
  "MOS Model Parameter Extraction Techniques: A Comparison";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 16 - 29.
  
  
• E. Cameron, J. Robertson, R. Holwill:
  "Control of Oxide Growth by Real-Time Simulation";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 405 - 411.
  
  
• J.S. Campbell, C. Lyden:
  "Cauchy-Newton Methods for the Solution of the Nonlinear Equations of SCD Numerical Modeling";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 362 - 370.
  
  
• M.J. Cooke:
  "Monte-Carlo Simulation of Thin Film Deposition in a Square Groove";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 398 - 404.
  
  
• G. De Mey:
  "Stochastic Geometry Effects in Polysilicon Interconnects";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 182 - 189.
  
  
• T.C. Denton:
  "Validation of BIPOLE";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 169 - 181.
  
  
• O.L. El-Sayed, K.E. Ismail:
  "Performance Optimization and Assessment of Normally-On Ga_0.47In_0.53As Injection FETs";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 114 - 129.
  
  
• G.V. Gadiyak, M.S. Obrecht:
  "The Use of Factorization Methods for Solving the Charge Transfer Equations in Semiconductor Devices";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 147 - 156.
  
  
• G.V. Gadiyak, I.V. Travkov:
  "Simulation of Insulator Conductivity in an Electric Field";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 572 - 579.
  
  
• M.D. Giles:
  "Calculation of Ion-Implantation Profiles for Two-Dimensional Process Modeling";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 233 - 246.
  
  
• C. Greenough, C.J. Hunt, R.D. Mount, C.J. Fitzsimons:
  "ESCAPADE: A Flexible Software System for Device Simulation";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 639.
  
  
• R. Guerrieri, P. Ciampolini, A. Gnudi, M. Gibertoni, M. Rudan, G. Baccarani:
  "An Investigation of Polycrystalline Silicon MOSFET Operation";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 468 - 479.
  
  
• S.E. Habib, S.H. Embabi:
  "Lateral Power MOSFET with an Improved On-Resistance";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 594 - 605.
  
  
• G. Hobler, E. Langer, S. Selberherr:
  "Two-Dimensional Modeling of Ion Implantation";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 256 - 270.
  
  
• R. Ismail, G. Amaratunga:
  "Contour Meshing with a 1D Remeshing Scheme for the Simulation of MOS Source/Drain Diffusion";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 560 - 571.
  
  
• H. Jacobs, R. Kircher, C. Werner, M. Strzempa-Depre, K.P. Karmann:
  "Design Variations for Suppressing Latch-Up in CMOS Circuits Studied by 2D Transient Device Simulation";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 44 - 57.
  
  
• R. Kircher, H.M. Muhlhoff, L. Risch, C. Werner:
  "Simulation of the Isolating Behavior of a Trench Capacitor";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 314 - 321.
  
  
• M. Koltai, S. Trutz:
  "Process Simulation on the IBM Personal Computer";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 580 - 593.
  
  
• M. Le Helley, J.P. Chante:
  "R_on-BV-C_GD Compromise in Power VDMOS Transistors";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 630 - 638.
  
  
• D. Loret, R. Baets, C.M. Snowden, W.J. Hughes:
  "Two-Dimensional Numerical Models for the High Electron Mobility Transistor";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 100 - 113.
  
  
• C. Lyden, W.M. Kelly, J.S. Campbell, S. Eivers:
  "Development and Verification of an Accurate GaAs MESFET Model";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 508 - 512.
  
  
• C.A. Marinov, P. Neittaanmaki:
  "Delay Time for General Distributed Networks with Application to Timing Analysis of Digital MOS Integrated Circuits";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 322 - 336.
  
  
• P.A. Mawby, C.M. Snowden, D.V. Morgan:
  "Numerical Modeling of GaAs/AlGaAs Heterojunctions and GaAs/AIGaAs Heterojunction Bipolar Transistors";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 82 - 99.
  
  
• A. McCowen, M.S. Towers:
  "Algorithms for 1D and 2D Transient Simulators";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 157 - 168.
  
  
• C. Moglestue:
  "Channel Mobility in Silicon MOSFETS";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 204 - 216.
  
  
• P.J. Mole:
  "The Numerical Simulation of Silicon-On-Insulator MOS Devices";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 434 - 448.
  
  
• S. Mottet, J.E. Viallet:
  "Simulation of Ill-V Devices on Semi-Insulating Materials";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 494 - 507.
  
  
• S. Mottet, J.E. Viallet:
  "Transient Hot Electron Behavior in GaAs MESFETS";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 68 - 81.
  
  
• S.J. Murray, P.J. Mole:
  "Towards a Physical Model of Carrier Mobility for Device Simulation";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 190 - 203.
  
  
• Y. Namba, J. Ueda, T. Miyoshi, S. Ushio:
  "Two/Three-Dimensional Device Simulator";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 299 - 313.
  
  
• M.J. Needs, V. Jovic, C. Taylor, K. Board, M.J. Cooke:
  "A 2D Linear Elastic Model for the Local Oxidation of Silicon Using the Boundary Element Method";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 412 - 432.
  
  
• S.J. Polak, W. Schilders, M. Driessen:
  "The CURRY Algorithm";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 131 - 146.
  
  
• M. Razaz, S.F. Quigley:
  "An Investigation of the Effects of Recessed-Gate Geometry on MESFET Performance";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 513 - 527.
  
  
• M. Razaz, S.F. Quigley:
  "Transient Simulation of MOSFETS";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 30 - 43.
  
  
• S. Selberherr:
  "The Status of MINIMOS"";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 2 - 15.
  
  
• M. Sever:
  "An Alternative Approach to Lumped Element Modeling";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 349 - 361.
  
  
• C.M. Snowden:
  "Two-Dimensional Modeling of Non-Stationary Effects in Short Gate Length GaAs MESFETs";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 544 - 558.
  
  
• J.S. Van Welij:
  "Basis Functions Matching Tangential Components on Element Edges";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 371 - 383.
  
  
• J.E. Viallet, S. Mottet:
  "Steady and Transient Simulation of Photodiodes";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 337 - 347.
  
  
• J.B. Waddell, J. Middleton:
  "A Design Model for Surface Termination Profile Optimization of pn-Junctions";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 480 - 493.
  
  
• R.P. Webb, I.H. Wilson:
  "An Extension to the Projected Range Algorithm (PRAL) to Give Energy Deposition Profiles";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 247 - 255.
  
  
• K.R. Whight, P.A. Gough:
  "On-State Modeling of Semiconductor Floating Regions Using Gummel's Algorithm";
  Talk: Conference, Swansea, UK; 1986-07-21 - 1986-07-23; in: "Proc. of SISDEP", (1986), 0-906674-59-X; 606 - 614.