SISDEP 1984 Proceedings

• S.A. Abbasi:
  "Modeling of the Dependence of Sheet Resistance of Boron Doped Layers on Masking Oxide Geometry";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 567 - 582.
  
  
• S.W. Abu Nailah:
  "Computation of the Capacitance of an Integrated n⁺p⁺p-Junction";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 111 - 120.
  
  
• R.W. Allen:
  "The Modeling of Sputtering and Etching Processes on a Microcomputer";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 525 - 537.
  
  
• H. Belhaddad, M. Le Helley, J. P. Change, A. Poncet, G. Merckel:
  "Numerical Simulation by a Finite Element Method of the Second Breakdown of Power Vertical DMOS Transistors";
  Talk: Conference, Swansea, U.K.; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 219 - 229.
  
  
• F. Berz, P.A. Gough, J.A. Slatter:
  "The Application of the Enthalpy Method to Modeling the Transient Recovery of pin-Diodes and GTO-Thyristors";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 182 - 203.
  
  
• P. Bettess, C. Greenough, C. Emson:
  "Speculative Approaches to the Mathematical Modeling of One-Dimensional pn-Junctions";
  Talk: Conference, Swansea, U.K.; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 247 - 266.
  
  
• A. Buttar, J. Robertson:
  "Control of Width Effects in Small Geometry CMOS Devices";
  Talk: Conference, Swansea, U.K.; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 368 - 377.
  
  
• N. Chan, R. Dutton:
  "Lump Partitioning of IC Bipolar Transistor Model for High-Frequency Applications";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 15 - 38.
  
  
• D.J. Coe, H.N. Vaes:
  "A 3D Numerical Simulation of Corner Breakdown in Extended Drain MOSTs";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 121 - 132.
  
  
• D.J. Coe, K.R. Whight, R.J. Tree, R.M. Innes:
  "A 2D/3D Analysis of the Threshold versus Punchthrough Compromise in Vertical DMOSTs";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 172 - 181.
  
  
• D. Collard, M. Lobet, J.N. Decarpigny, I. Desoutter:
  "Two-Dimensional Process Simulation Using a Quadratic Finite Element Discretization: The Connection with Simulation";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 488 - 504.
  
  
• M. Darwish, K. Board:
  "Modeling of LDMOS Transistors with Ion-Implanted and SIPOS Surface Layers";
  Talk: Conference, Swansea, U.K.; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 230 - 239.
  
  
• C. De Heijer:
  "Preconditioned Iterative Methods for Non-Symmetric Linear Systems";
  Talk: Conference, Swansea, U.K.; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 267 - 285.
  
  
• G. De Mey, D. Loret, A. Van Calster:
  "The Boundary Element Method for Modeling the DMOS Transistor at High Drain Voltages";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 69 - 81.
  
  
• G.P. Doades, H.J. Howes, D.V. Morgan:
  "Performance of GaAs Device Simulations at Microwave Frequencies";
  Talk: Conference, Swansea, U.K.; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 353 - 367.
  
  
• W. Fichtner:
  "Process Simulation: Current Status and Future Needs";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 426 - 450.
  
  
• G.A. Franz, A.F. Franz:
  "Transient 2D Simulation of Power Thyristors";
  Talk: Conference, Swansea, U.K.; 1984-07-09 - 1984-07-12; in: "Proc.of SISDEP", (1984), 0-906674-38-7; 204 - 218.
  
  
• J. Frey:
  "Simulation of Submicron Si and GaAs Devices";
  Talk: Conference, Swansea, U.K.; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 337 - 352.
  
  
• G.V. Gadiyak:
  "On One Method of Semiconductor Structure Calculation";
  Talk: Conference, Swansea, U.K.; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 330 - 336.
  
  
• S.E. Hansen, J.D. Plummer, J.D. Shott, R.W. Dutton:
  "Simulation of Multilayer Structures for VLSI Using the SUPREM-III Process Simulation Program";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 583 - 597.
  
  
• A.J. Holden, C.H. Oxley:
  "Computer Modeling of Traveling Wave Transistors";
  Talk: Conference, Swansea, U.K.; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 319 - 329.
  
  
• S. Ichikawa:
  "Computation of the Hydrodynamics of 2D Oxidation Processes Using Boundary Fitted Coordinate Systems";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 538 - 546.
  
  
• J.P. Lavine:
  "Simulation of Impurity Diffusion in a Polycrystalline Thin Film";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 467 - 487.
  
  
• M.K. Lee, C.Y. Lu, C. Shih:
  "Modeling for Computer Simulation on Silicon Oxidation";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 451 - 466.
  
  
• C.D. Maldonado:
  "Romansii: A Two-Dimensional Process Simulator";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 547 - 566.
  
  
• B. Meinerzhagen, H.K. Dirks:
  "A Comparison of Numerical and Analytical Short Channel MOST Models";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 391 - 405.
  
  
• J. Middleton, J.W. Wadell:
  "Sensitivity Analysis and its Application in the Optimum Design of Semiconductor Devices";
  Talk: Conference, Swansea, U.K.; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 286 - 296.
  
  
• M.S. Mock:
  "Quadrilateral Elements and the Scharfetter-Gummel Method";
  Talk: Conference, Swansea, U.K.; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 298 - 309.
  
  
• C. Moglestue:
  "A Monte Carlo Particle Study of a Semiconductor Responding to a Light Pulse";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 153 - 163.
  
  
• E. Palm, F. Van de Wiele:
  "Two-Dimensional Transient Simulation of Semiconductor Devices Coupled to an External Circuit";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 1 - 16.
  
  
• S.J. Polak, W. Schilders:
  "A Characteristic Box Scheme for the Singularly Perturbed Continuity Equation";
  Talk: Conference, Swansea, U.K.; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 240 - 247.
  
  
• W.D. Ryan:
  "Boundary Integral Methods in the Solution of the Semiconductor Equations";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 56 - 68.
  
  
• K. Sakamoto, J. Ueda, T. Miyoshi, S. Ushio:
  "Two-Dimensional Numerical Analysis for Devices with Free Step Design Method";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 94 - 110.
  
  
• E. Sangiorgi, C. Rafferty, M. Pinto, R. Dutton:
  "Non-Planar Schottky Device Analysis and Applications";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 164 - 171.
  
  
• W.H. Schilders, S.J. Polak:
  "On the Influence of Quadrature Rules in the New Scharfetter-Gummel Scheme";
  Talk: Conference, Swansea, U.K.; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 310 - 318.
  
  
• S. Selberherr, W. Griebel, H. Pötzl:
  "Transport Physics for Modeling Semiconductor Devices";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 133 - 152.
  
  
• C.M. Snowden:
  "Numerical Simulation of Microwave GaAs MESFETs";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 406 - 425.
  
  
• F. Straker, S. Selberherr:
  "Capacitance Computation for VLSI Structures";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 39 - 55.
  
  
• M. Wong, R. Reif:
  "Numerical Simulation of Autodoping Profiles in Silicon Epitaxy";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 505 - 524.
  
  
• G.T. Wright, P.P. Frangos:
  "A Simplified Analytical One-Dimensional Model for Saturation Operation of the Bipolar Transistor";
  Talk: Conference, Swansea, UK; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 82 - 93.
  
  
• G.T. Wright, H.M. Gaffur:
  "Pre-Processor Geometry, Temperature and Parameter Modeling of Short and Narrow MOSFETS for VLSI Circuit Simulation, Optimization and Statistics with SPICE";
  Talk: Conference, Swansea, U.K.; 1984-07-09 - 1984-07-12; in: "Proc. of SISDEP", (1984), 0-906674-38-7; 378 - 390.