Technical Program
Session 1: Plenary Session (CONVENTION HALL [HAKONE higashi+naka])
Chairpersons: K.
Matsuzawa, Toshiba Corp.
T.
Grasser, Technical Univ. Vienna
9:20 |
Opening and Welcome Remarks K. Ishikawa, Renesas Technol. Corp. |
9:30 1-1 |
Progress in Biosensor and Bioelectronics Simulations: New Applications
for TCAD |
10:15 |
Quasi-Ballistic Transport
in Nanowire Field-Effect Transistors |
11:00 |
Understanding and Engineering of Carrier Transport in Advanced MOS Channels S. Takagi1,2 1The Univ. Tokyo and 2MIRAI-AIST, Japan |
11:45 Lunch
Session 2: Fluctuation (CONVENTION HALL
[HAKONE higashi+naka])
Chairpersons: M.
Ogawa, Kobe Univ.
P. Oldiges, IBM
13:00 |
Computational Electronics in the 21st Century: Challenges, Opportunities, Issues (Invited) M. Lundstrom Purdue Univ., USA |
13:30 |
Full-band and Atomistic Simulation of n- and p-doped Double-gate MOSFETs
for the |
13:50 |
Prediction of Random Dopant Induced Threshold Voltage Fluctuations in NanoCMOS |
14:10 |
Impact of Fixed Charge at
MOSFETs' SiO2/Si Interface on Vth
Variation |
14:30 |
Ensemble Monte Carlo/Molecular Dynamics Simulation of Electron Mobility
in Silicon |
14:50 |
Monte Carlo Investigation of
Potential Fluctuation in 3D Device Structure |
15:10 Break
Session 3: Memory (CONVENTION
HALL [HAKONE higashi+naka])
Chairpersons: Y.
Ohkura, Selete
Y.-K. Park, Samsung
15:30 |
Full 3D String-Level
Simulation of NAND Flash Device |
15:50 |
Evaluating the Effects of Physical Mechanisms on the Program, Erase and Retention in |
16:10 |
Transient Device
Simulation of Trap-Assisted Leakage in Non-Volatile Memory Cell |
16:30 3-4 |
Modeling the VTH
Fluctuations in Nanoscale Floating Gate Memories |
16:50 |
Micro Magnetic Simulation
of Write Error Probability in STT-MRAM |
17:10 |
Phase-Change Memory
Simulations Using an Analytical Phase Space Model |
18:00 Reception (CONVENTION HALL [HAKONE nishi])
Wednesday, September 10
Session 4: Noise
and Reliability (CONVENTION HALL [HAKONE naka] )
Chairpersons: T.
Ezaki, Hiroshima Univ.
C. Mouli, Micron Semiconductor
10:00 |
A Unified Approach for the Reliability Modeling of MOSFETs (Invited) C.-K. Baek1, S. Choi1, H.-H. Park1, J.-M. Woo1, S.-M. Hong2, C.H. Park3, and Y.J. Park1 1Seoul National Univ., Korea, 2Bundeswehr Univ., Germany, and 3Kwangwoon Univ., Korea |
10:30 |
Modeling Bias Temperature
Instability During Stress and Recovery |
10:50 |
Level Shifts and Gate
Interfaces as Vital Ingredients in Modeling of Charge Trapping |
11:10 |
Investigation of Noise in Silicon Nanowire Transistors through Quantum
Simulations |
11:30 |
Statistical Analysis of Random Telegraph Noise in CMOS Image Sensors |
Session 5: New Function Device (CONVENTION
HALL [HAKONE higashi])
Chairperson: K. Fukuda, Oki Electric Ind. Co., Ltd.
N. Nakano, Keio Univ.
10:30 |
Numerical Study of Carbon
Nanotube Infra-Red Photo-Detectors |
10:50 |
Self-Consistent Simulation of Schottky Barrier SpinFET |
11:10 |
Interpretation of Laser Absorption Measurements on 4H-SiC Bipolar Diodes by |
11:30 |
Numerical Modeling of a Deoxyribonucleic Acid Microassay: Carbon Nanotube
Thin |
11:50 Lunch
Session 6: Performance Booster (CONVENTION
HALL [HAKONE naka])
Chairpersons: M. Kimura, Sony
T. Krishnamohan, Stanford Univ. and Intel Corp.
13:30 |
Band-engineering of Novel Channel Materials for High Performance Nanoscale |
14:00 |
Performance Evaluation of
Uniaxial- and Biaxial-Strained In(x)Ga(1-x)As NMOS |
14:20 |
Transport Masses in
Strained Silicon MOSFETs with Different Channel Orientations |
14:40 Break
15:00 |
Study of Stress Effect on
Replacement Gate Technology with Compressive Stress Liner and eSiGe for pFETs |
15:20 |
Source/Drain Engineering
for High-Performance Deep Sub-100nm Ge-pMOSFETs Using Full-Band Monte Carlo
Simulation |
15:40 |
Progress in Modeling of SMT “Stress Memorization Technique” and Prediction
of Stress Enhancement by a Novel PMOS SMT Process |
16:00 |
Impact of Inhomogeneous
Strain on the Valence Band Structures of Ge-Si Core-Shell Nanowires |
16:30-18:30 Poster Session (CONVENTION HALL [HAKONE higashi])
P-1 |
Is Dual Gate Device Structure Better From Thermal Perspective? |
P-2 |
Consistent Higher-Order Transport Models for SOI MOSFETs |
P-3 |
An Analytical 2D Current
Model of Double-Gate Schottky-Barrier MOSFETs |
P-4 |
Analytical Model for Point and Line Tunneling in a Tunnel Field-Effect
Transistor |
P-5 |
Ultra High Performance
Insulator Channel Transistor |
P-6 |
Mobility Enhancement in Thin Silicon Films: Strain and Thickness Dependences
of |
P-7 |
Strain Effects on
Ballistic Current in Ultrathin DG SOI MOSFETs |
P-8 |
3D Monte Carlo Simulation
of Tri-Gate MOSFETs Using Tetrahedral Finite Elements |
P-9 |
A Complete Charge Based Compact Model for Silicon Nanowire FETs including
Doping |
P-10 |
Simulation of Self Gating Effect of a Liquid Gate Carbon Nanotube Field
Effect |
P-11 |
Comparative Simulation
Study of GNR-FETs Using EHT- and TB-Based NEGF |
P-12 |
Simulation of Single and Multi-Layer Graphene Field-Effect Devices |
P-13 |
Unusually Strong
Temperature Dependence of Graphene Electron Mobility |
P-14 |
Electronic and
Transport Properties of GaN/AlGaN Quantum Dot-Based p-i-n
Diodes |
P-15 |
Effects of Quantum
Confinement on Interface Trap Occupation in 4H-SiC MOSFETs |
P-16 |
Analysis and Modeling of Capacitance-Voltage Characteristics of Poly-Si
TFTs Using |
P-17 |
Organic Thin-Film Transistors Modeling; Simulation and Design of a Fully Organic AMOLED |
P-18 |
Simulation of Field-Effect Biosensors (BioFETs) |
P-19 |
Effect of Contacts on the Terahertz Plasma Resonances in Two-Dimensional
Electron Systems |
P-20 |
Numerical Modeling and
Design of Single Photon Counter 4H-SiC Avalanche Photodiodes |
P-21 |
Emission Efficiency Dependence on the Tilted Angle of Nanogaps in Surface |
P-22 |
Reduction of
Discrete-Dopant-Induced High-Frequency Characteristic Fluctuations in Nanoscale
CMOS Circuit |
P-23 |
Effect of Random
Impurities on Transport Characteristics of Nano-Scale MOSFET |
P-24 |
Effects of Wavefunction Modulation on Electron Transport in Ultrathin-Body
DG |
P-25 |
Analysis of Direct Tunneling Current from Quasi-Bound States in n-MOSFET Based on |
P-26 |
Study on the Optimized
Design of Nanowire Tunneling Transistors including Quantum Effects |
P-27 |
Band Calculation for the Hexagonal and FCC Chalcogenide Ge2Sb2Te5 |
P-28 |
First-Principles Calculations for Effects of Fluorine Impurity in GaN |
P-29 |
Analysis of
Electromigration in Redundant Vias |
P-30 |
Analysis of Microstructure
Impact on Electromigration |
P-31 |
3-D Stress Simulation using Simple Quasi-Models of Gate Oxidation and Silicidation |
P-32 |
Ion Implantation Model for
Channeling through Multi-Layers |
P-33 |
Analytical Model and Monte Carlo Simulations for Phosphorus Implantation
in |
P-34 |
A Highly Effective and
Efficient Cost-Function-Reduction Method for Inverse Lithography Technique |
P-35 |
Convergence Properties of Density Gradient Quantum Corrections in 3D Ensemble |
P-36 |
A Robust Parallel Delaunay Mesh Generation Approach Suitable for Three-Dimensional
TCAD |
P-37 |
Operational PRAM Analysis
with PVT Variations Using Process-Aware Compact Model |
P-38 |
A Surface Potential Model
for Bulk MOSFET which Accurately Reflects Channel Doping Profile Expelling
Fitting Parameters |
Thursday, September 11
Session 7: Transport
and Mobility (CONVENTION HALL [HAKONE naka])
Chairperson: Y. Kamakura, Osaka Univ.
M.D. Profirescu, Univ. Politehnica of Bucharest.
9:20 |
Wigner
Monte Carlo Approach to Quantum Transport in Nanodevices (Invited) |
9:50 |
Three-Dimensional Quantum Transport Simulation of Si-Nanowire Transistors
Based on Wigner Function Model |
10:10 |
Phonon Transport in
Electronic Devices: From Diffusive to Ballistic Regime |
10:30 |
A Theoretical Study of
Electron Mobility Reduction due to Acoustic Phonon Modulation in a
Free-Standing Semiconductor Nanowire |
10:50 Break
11:10 |
A Deterministic Boltzmann Equation Solver for Two-Dimensional Semiconductor
Devices |
11:30 |
Coupling the Monte-Carlo Method with Semi-Analytical Solutions of the Boltzmann |
11:50 |
2D Simulation of Gate Currents in MOSFETs: Comparison between S-Device
and the Quantum Mechanical Simulator GreenSolver |
12:10 |
Modulated Exchange and Gate Oxide Thickness Effects on Surface Roughness |
Session 8: Device Design (CONVENTION HALL [HAKONE higashi])
Chairpersons: S. Dunham, Univ. of Washington.
M. Hane, NEC Electronics Corp
9:50 |
Device Scaling of High Performance MOSFET with Metal Gate High-K at 32nm |
10:10 |
Air-Spacer Self-Aligned
Contact MOSFET for Future Dense Memories |
10:30 |
Advanced Annealing Strategies for the 32 nm node |
10:50 Break
11:10 |
Monte Carlo Simulation of
Cu-Resistivity |
11:30 |
Three-Dimensional Topography Simulation Using Advanced Level Set and Ray |
11:50 |
Atomistic Approach for
Boron Transient Enhanced Diffusion and Clustering |
12:10 |
Atomistic Modeling of
Dopant Diffusion and Segregation in Strained SiGeC |
12:30 Lunch
Session 9: Quantum Transport (CONVENTION HALL [HAKONE naka])
Chairpersons: N. Mori, Osaka Univ
G. Wachutka, Technische Univ. Muenchen
14:00 |
2D/3D NEGF Modeling of the Impact of Random Dopants/Dopant Aggregation in |
14:30 |
Simulation of Impurities with Attractive Potential in Fully 3-D Real-Space
Non-Equilibrium Green's Function Quantum Transport Simulations |
14:50 |
Coupling of
Non-Equilibrium Green’s Function and Wigner Function Approaches |
15:10 Break
15:30 |
A Self-Consistent Calculation of Band Structure in Silicon Nanowires Using
a |
15:50 |
Modeling of High-k-Metal-Gate-Stacks Using the Non-Equilibrium Green's
Function |
16:10 |
Effect of Interface
Characteristics of W/HfO2±x on Electronic Reliability : Quantum Chemical Molecular Dynamics Study |
16:30 |
Physics of Tunneling from
a Macroscopic Perspective |
Session 10: Circuit Simulation (CONVENTION
HALL [HAKONE higashi])
Chairpersos: K.
Ishikawa, Renesas Technology Corp.
V. Axelrad, Sequoia Design System.
14:30 |
Synthetic Soft Error Rate Simulation Considering Neutron-induced Single
Event |
14:50 |
Analysis of Temperature and Process Variation Effects of Photo Sensor Circuit |
15:10 Break
15:30 |
A Surface Potential Based
Poly-Si TFT Model for Circuit Simulation |
15:50 |
A New Unified Compact Model for Quasi-Ballistic Transport: Application
to the |
16:10 |
Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation |