Session 2: Quantum-Mechanical Models
Location: Conference
Room New York |
11:00 |
The Density-Gradient Correction as a
Disguised Pilot Wave of de Broglie
Rudan, M., Gnani, E. ,
Reggiani, S., Baccarani, G.
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E.
De Castro Advanced Research Center on Electronic Systems and
Department of Electronics, Computer Science and Systems, University of
Bologna, Italy |
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11:20
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Full Band and Approximated Solutions of the
Schrödinger Equation in Silicon Inversion layers
Esseni, D., Palestri, P.
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DIEGM,
Italy |
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11:40
|
A Hybrid 3D Quantum Mechanical Simulation
of FinFETs and Nanowire Devices
Shao, X., Yu, Z.
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Institute
of Microelectronics, Tsinghua University, China |
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12:00
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On the Calculation of Quasi-Bound States
and Their Impact on Direct Tunneling in CMOS Devices
Gehring, A., Selberherr, S
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Institute
for Microelectronics, TU Vienna, Austria |
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12:20
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Quantum Mechanical Simulation in DG MOSFETs
Based on a Tight Binding Green's Function Formalism
Ogawa, M., Kagotani, N.,
Ohta M., Miyoshi, T.
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Department
of Electrical and Electronics Engineering, Kobe University, Japan |
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