Session 15: Fluctuations
Location: Conference
Room New York
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14:00 |
Impact
of Scattering on Random Dopant Induced Current Fluctuations in Decanano
MOSFETs
Alexander,
C., Brown, A. R., Watling, J. R., Asenov, A.
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Department
of Electronics and Electrical Engineering, University of Glasgow, UK |
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14:20
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Analysis
of Random Doping and Oxide Thickness Induced Fluctuations in Nanoscale
Semiconductor Devices through Poisson-Schrödinger Computations
Mayergoyz,
I. D., Andrei, P.
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Department
of Electrical and Computer Engineering, College Park, MD, USA |
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14:40
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Stable
simulation of impurity fluctuation for contact resistance and Schottky
diodes
Matsuzawa1,
K., Sano2, N.
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1
Advanced LSI Technology Laboratory, Toshiba Corporation, Japan
2 Institute of Applied Physics, University of
Tsukuba, Japan |
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15:00
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Coffee
Break
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15:30
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Impact
of the Floating Body Effect on Noise in SOI Devices Investigated by
Hydrodynamic Simulation
Jungemann,
C., Neinhüs, B., Nguyen, C. D., Meinerzhagen, B.
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NST,
TU Braunschweig, Germany |
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15:50
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Examination
of Spatial Frequency Dependence of Line Edge Roughness on MOS Device
Characteristics
Oldiges,
P., Murthy, C.
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IBM Semiconductor Research and
Development Center (SRDC),
Microelectronics
Division, Hopewell Junction, USA
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16:10
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Simulation
of Lithography-caused Gate Length and Interconnect Linewidth
Variational Impact on Circuit Performance in Nanoscale Semiconductor
Choi,
M.,Jia, C., Milor, L.
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School
of Electrical and Computer Engineering, Georgia Institute of
Technology, Atlanta, U.S.A. |
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