Technical Program:
September 3, 2003
September 5, 2003
Session 3 - Fluctuations | |
8:30 - 9:15 I-5 |
"The Physical and Numerical Implications of the Noise Modeling Method: IFM, CPM, and ERS" H. Nah, S.-M. Hong, Y. J. Park, H. S. Min, Seoul National University, Seoul, Republic of Korea |
9:15 - 9:40 3-1 |
"Thermal Noise Modeling for Short-Channel MOSFET's" K. Han, H. Shin, K. Lee, Korea Advanced Institute of Science and Technology, Daejeon, Korea |
9:40 - 10:05 3-2 |
"Simulation of Noise Characteristics Caused by Discretized Traps in MOSFETs" K. Matsuzawa, T. Ohguro, N. Aoki, Toshiba Corporation, Yokohama, Japan |
Break (15 minutes) | |
10:20 - 10:45 3-3 |
"Hydrodynamic Simulation of RF Noise in Deep-submicron MOSFETs" T.-Y. Oh, C. Jungemann, R. W. Dutton, Stanford University, Stanford, CA |
10:45 - 11:10 3-4 |
"Random Dopant Fluctuation Modelling with the Impedance Field Method" A. Wettstein, O. Penzin*, E. Lyumkis*, W. Fichtner*, Integrated Systems Engineering AG, Zurich, Switzerland, * Integrated Systems Engineering, Inc., San Jose, CA and **ETH Zurich, Zurich, Switzerland |
11:10 - 11:35 3-5 |
"Analysis of Fluctuations in Ultra-small Semiconductor Devices" P. Andrei, I.D. Mayergoy, University of Maryland, College Park, MD |
11:35 - 12:00 3-6 |
"Coupled Atomistic 3D Process/Device Simulation Considering Both Line-Edge Roughness and Random-Discrete-Dopant Effects" M. Hane, T. Ikezawa, T. Ezaki, NEC Corporation, Sagamihara, Japan |
Session 4 - Numerics for Process/Device Modeling |
|
1:30 - 2:15 I-6 |
Invited Speaker "Recent Advances in Sparse Linear Solver Technology for Semiconductor Device Simulation Matrices" O. Schenk, S. Roellin and M. Hagemann, University of Basel, Basel, Switzerland |
2:15 - 2:40 4-1 |
"Error Estimated Driven Anisotropic Mesh Refinement for Three-Dimensional Diffusion Simulation" W. Wessner, C. Heitzinger, A. Hossinger, S. Selberherr, TU Vienna, Vienna, Austria |
2:40 - 3:05 4-2 |
"Zero-Flux Boundary Condition in a Two-Probability-Parameter Random Walk Model" M. Orlowski, Motorola, Austin, TX |
3:05 - 3:30 4-3 |
"On the Inclusion of Floating Domains in Electromagnetic Field Solvers" W. Schoenmaker, P. Meuris, IMEC, Leuven, Belgium |
Session 5 - High Field Device Transport |
|
1:50 - 2:15 5-1 |
"Detailed Heat Generation Simulations via the Monte Carlo Method" E. Pop, R. W. Dutton, K. Goodson, Stanford University, Stanford, CA |
2:15 - 2:40 5-2 |
"Investigation of Thermal Breakdown Mechanism in 0.18 m Technology ggNMOS under ESD Condition" L. M. Hillkirk, J.-H. Chun*, R. W. Dutton*, Royal Institute of Technology, Kista, Sweden and *Stanford University, Stanford, CA |
2:40 - 3:05 5-3 |
"Simulation of Number of Pulses to Breakdown During TLP for ESD Testing" K. Matsuzawa, H. Satake, C. Sutou, H. Kawashima, Toshiba Corporation, Yokohama, Japan |
3:05 - 3:30 5-4 |
"Characterization of Zener-Tunneling Drain Leakage Current in High-Dose Halo Implants" C.-H. Choi, S.-H. Yang*, G. Pollack*, S. Ekbote*, P.R. Chidambaram*, S. Johnson*, C. Machala*, R. W. Dutton, Stanford University, Stanford, CA and *Texas Instruments Inc., Dallas, TX |
3:30 - 6:30 | Poster Session |