The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of leading-edge research and development results in the field of process and device simulation. SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano-electronic structures. The conference is held annually in September and the location alternates between the United States, Japan, and Europe.
The topics covered in SISPAD include:

• Modeling and simulation of all types of semiconductor devices, including FinFETs, GAA FETs, ultra-thin SOI devices, emerging memory devices, new material-based nanodevices, optoelectronic devices, TFTs, sensors, power electronic devices, spintronic devices, tunnel FETs, SETs, organic electronic devices, and bioelectronic devices
• Modeling and simulation of all sorts of semiconductor processes, including first principles material design, and growth simulation of nano-scale fabrication
• Fundamental aspects of device modeling and simulation, including quantum transport, thermal transport, fluctuation, noise, and reliability
• Compact modeling for circuit simulation, including low-power, high frequency, and power electronics applications
• Process/device/circuit co-simulation in context with system design and verification
• Equipment, topography, lithography modeling
• Interconnect modeling, including noise and parasitic effects
• Numerical methods and algorithms, including grid generation, user-interface, and visualization
• Metrology for the modeling of semiconductor devices and processes
• Multiscale approach from First Principles to TCAD simulations
• Estimation with TCAD and machine learning
• Neuromorphic devices and quantum computing
• Multi-physics simulation

Upcoming conference:

The next SISPAD conference will be held in Grenoble, France.

In 1996 the first SISPAD conference was held in Tokyo as the successor to three preceding conferences:

• NUPAD - The International Workshop on Numerical Modeling of Processes and Devices, held in the United States
• VPAD - The International Workshop on VLSI Process and Device Modeling, held in Japan
• SISDEP - The International Conference on Simulation of Semiconductor Devices and Processes, held in Europe